#author("2020-11-20T22:46:42+09:00","default:ishikawa","ishikawa") #include(MenuTab1,notitle) 2011年の国際会議リスト -95) ''Kenji Ishikawa'', Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori. --(''INVITED'') Real-time electron-spin-resonance study of plasma-surface interaction. ---12th International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop, (Kyushu Univ., Fukuoka, Japan, Jan. 4-6, 2011). -96) T. Hiraoka, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M. Ito, Makoto Sekine, and Masaru Hori. --Study of terahertz time domain spectroscopy for biological plasma applications. ---12th International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop, (Kyushu Univ., Fukuoka, Japan, Jan. 4-6, 2011). -97) S. Iseki, T. Ohta, M. Ito, H. Kano, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine and Masaru Hori. --Effect of reactive oxygen species on Penicillium digitatum inactivation. ---12th International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop, (Kyushu Univ., Fukuoka, Japan, Jan. 4-6, 2011). -98) Masaru Hori, ''Kenji Ishikawa'', Keigo Takeda, and Sekine Makoto. --Insight into plasma nano-interface with organic materials. ---2nd International Workshop on Plasma Nano-interface and Plasma Characterization (Cerklje, Slovenija, March 1-4, 2011). -99) ''Kenji Ishikawa'', Shang Chen, Ryosuke Kometani, Hiroki Kondo, Keigo Takeda, Hiroyuki Kano, Yutaka Tokuda, Makoto Sekine, and Masaru Hori. --Nitrogen radical annealing recovery of etch-induced-damage on GaN. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-036B, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -100) Ryosuke Kometani, Shang Chen, ''Kenji Ishikawa'', Hiroki Kondo, Keigo Takeda, Hiroyuki Kano, Makoto Sekine, Hiroshi Amano, Yuichi Setsuhara, Masaru Hori. --Interaction of gallium nitride (GaN) surface with chlorine plasma beams analyzed by in-situ XPS. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-001A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -101) Shang Chen, Ryosuke Kometani, ''Kenji Ishikawa'', Hiroki Kondo, Keigo Takeda, Hiroyuki Kano, Yutaka Tokuda, Makoto Sekine, and Masaru Hori. --Deep level defect in GaN after plasma beam etching. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-003A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -102) Naoya Sumi, ''Kenji Ishikawa'', Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori. --Real-time electron-spin-resonance measurement of plasma induced surface interactions. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), 7p-A04OA, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -103) T. Hiraoka, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M. Ito, Makoto Sekine, Masaru Hori. --Measurement of optical properties of carbon-based material using terahertz time domain spectroscopy. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P2-002A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -104) Noboru Ebizuka, Hiroki Kondo, ''Kenji Ishikawa'', Masaru Hori. --Plasma nano-technologies for fabrications of VPH grating, quasi-Bragg grating and novel immersion grating. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P2-019A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -105) Yusuke Kondo, Y. Miyawaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, T. Hayashi, H. Okamoto,Makoto Sekine, Masaru Hori. --SiO2 plasma etching process using alternative gas, C3F6O. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-004A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -106) Sho Kawashima, Yusuke Abe, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori. --Crystallinity control of microcrystalline silicon film employing hydrogen radical-injection plasma-enhanced chemical vapor deposition. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P4-002A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -107) Yusuke Abe, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori. --Surface loss probability of hydrogen radical in SiH4/H2 plasma. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P2-001A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -108) H. Shimoeda, H. Kondo, K. Takeda, ''Kenji Ishikawa'', M. Hiramatsu, Makoto Sekine, and Masaru Hori. --Effects of substrate temperatures on crystallographic changes of carbon nanowalls induced by radical irradiation. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P1-048C, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -109) M. Kato, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, and Masaru Hori. --Three dimensional distribution of atomic radical in nonequilibrium atmospheric pressure plasma. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P1-004A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -110) Tatsuya Hagino, H. Kano, ''Kenji Ishikawa'', K. Takeda, H. Kondo, Makoto Sekine, and Masaru Hori. --High-speed synthesis of nano-graphene by in-liquid plasma in alcohol. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P1-053C, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -111) Fendong Jia, N. Sumi, ''Kenji Ishikawa'', H. Kano, H. Inui, K. Takeda, H. Kondo, Makoto Sekine, and Masaru Hori. --Measurement of the electron temperature and density of 60 Hz nonequilibrium atmospheric pressure plasma jet by laser Thomson scattering. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P1-010A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -112) Sachiko Iseki, T. Ohta, M. Ito, H. Kano, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --O radical measurement in Penicillium digitatum inactivation using non-equilibrium atmospheric O2/Ar plasma. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P2-005A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -113) A. Malinowski, Masaru Hori, Makoto Sekine, ''Kenji Ishikawa'', H. Kondo, H. Yamamoto, T. Takeuchi, T. Suzuki, A. Jakubowski, and L. Lukasiak. --Radical flux modeling and analysis for sticking coefficient evaluation. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P2-020A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -114) Takuya Takeuchi, S. Amasaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, and Masaru Hori. --In situ XPS analysis of surface modification on ArF photoresist by fluorocarbon plasma beams. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-007A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -115) Yudai Miyawaki, Y. Kondo, H. Yamamoto, K. Takeda, ''Kenji Ishikawa'', A. Yamazaki, A. Ito, H. Matsumoto, Makoto Sekine, and Masaru Hori. --C5HF7 chemistry for highly selective etch of SiO2 over Si. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-002A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -116) Toshiya Suzuki, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Sub-nm scale control of etched-profile-fluctuations in organic low-k film etch. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-006A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -117) Shinpei Amasaki, T. Takeuchi, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, N. Sakurai, H. Hayashi, I. Sakai, T. Ohiwa, and Masaru Hori. --Study of Si etch reaction with F and O radicals using SF6/O2 plasma. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-008A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -118) Kohei Asano, H. Yamamoto, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, and Masaru Hori. --In-situ FTIR analysis of porous low-k films exposed to O2 plasma. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P3-005A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -119) Sho Kawashima, Y. Abe, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, and Masaru Hori. --Crystallinity control of microcrystalline silicon film employing hydrogen radical-injection plasma-enhanced chemical vapor deposition. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P4-002A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -120) Tokushige Kino, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Synthesis of amorphous carbon films employing radical-injection plasma-enhanced chemical vapor deposition system for solar cell application. ---3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2011), P4-007A, (Nagoya Institute of Technology, Nagoya Japan, Mar. 11-12, 2011). -121) Naoya Sumi, ''Kenji Ishikawa'', Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori. --Real-time/in-situ electron-spin-resonance analysis of surface reactions on organic materials in plasma processes. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-11. -122) Shinpei Amasaki, T. Takeuchi, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, Masaru Hori, N. Sakurai, H. Hayashi, I. Sakai, and T. Ohiwa. --Investigation of Si etch reaction with F and O radicals using SF6/O2 plasma. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-20. -123) Yusuke Kondo, Y. Miyawaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, T. Hayashi, H. Okamoto, Makoto Sekine, and Masaru Hori. --Chemical modeling of etch process using C3F6O alternative gas. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-25. -124) A. Malinowski, Makoto Sekine, Masaru Hori, ''Kenji Ishikawa'', H. Kondo, T. Suzuki, T. Takeuchi, H. Yamamoto, A. Jakubowski, and L. Lukasiak. --Investigation of surface reactions in ArF photoresist by using parallel plate structure in conjunction with numerical analysis. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-37. -125) T. Kanda, H. Kondo, K. Yamakawa, M. Hiramatsu, K. Takeda, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Control of bridging growth and electrical properties of single carbon nanowalls. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-41. -126) Toshio Hayashi, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori, A. Kono, and K. Suu. --Dissociations of alternate etching gases in reactive plasma. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-42. -127) M. Kato, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, and Masaru Hori. --Gas phase reaction of activated species in O2/Ar nonequilibrium atmospheric pressure plasma. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-44. -128) Shang Chen, Y. Lu, R. Kometani, K. Takeda, ''Kenji Ishikawa'', H. Kondo, H. Kano, Y. Tokuda, Makoto Sekine, Y. Setsuhara, T. Egawa, H. Amano, and Masaru Hori. --Passivation of plasma damaged GaN with hydrogen radical anneal. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-51. -129) Fendong Jia, K. Takeda, ''Kenji Ishikawa'', H. Inui, S. Iseki, H. Kano, H. Kondo, Makoto Sekine, and Masaru Hori. --Measurement of atomic oxygen in ultrahigh density 60 Hz atmospheric pressure plasma by two photon absorption laser induced fluorescence. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-52. -130) Y. Lu, S. Chen, R. Kometani, ''Kenji Ishikawa'', H. Kondo, K. Takeda, Makoto Sekine, T. Egawa, H. Amano, Y. Setsuhara, and Masaru Hori. --Surface analysis of GaN irradiated by Cl2 plasma beam. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), P-53. -131) Tatsuya Hagino, Hiroyuki Kano, ''Kenji Ishikawa'', K. Takeda, H. Kondo, Makoto Sekine, and Masaru Hori. --Synthesis of nano-graphene by plasma in liquid ethanol. ---4th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2011), (Takayama, Gifu, Japan, Mar. 10-12, 2011), O-09. -132) Toshiya Suzuki, S. Mitsuguti, A. Malinowski, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori. --Subnanometer-scale control of feature size and shape in organic low-k film etch. ---International Conference on Microelectronics and Plasma Technology (ICMAP) (Dalian, China, July 4-7, 2011), S-07O. -133) Hiroki Kondo, Tatsuya Hagino, ''Kenji Ishikawa'', Keigo Takeda, Hiroyuki Kano, Makoto Sekine, Masaru Hori. --Growth processes and crystallographic properties of nanographenes synthesized employing in-liquid plasma. ---International Conference on Microelectronics and Plasma Technology (ICMAP) (Dalian, China, July 4-7, 2011), S-120P. -134) ''Kenji Ishikawa'', N. Sumi, A. Kono, H. Horibe, K. Takeda, H. Kondo,M. Sekine, and M. Hori. --(INVITED) Real-time electron-spin-resonance study of plasma-surface interaction. ---13th International Workshop on Advanced Plasma Processing and Diagnostics (Daejeon, Korea, July 21-22, 2011) -135) Shang Chen, Yi Lu, Ryousuke Kometani, ''Kenji Ishikawa'', Hiroki Kondo, Keigo Takeda, Hiroyuki Kano, Makoto Sekine, and Masaru Hori. --Recovery of plasma-damaged GaN by atomic nitrogen and hydrogen. ---13th International Workshop on Advanced Plasma Processing and Diagnostics (Daejeon, Korea, July 21-22, 2011) -136) Hironao Shimoeda, Hiroki Kondo, ''Kenji Ishikawa'', Hiramatsu Mineo, Makoto Sekine, and Masaru Hori. --Effects of oxygen radical irradiation on crystalline structures of carbon nanowalls. ---13th International Workshop on Advanced Plasma Processing and Diagnostics (Daejeon, Korea, July 21-22, 2011) -137) Masaru Hori, ''Kenji Ishikawa'', Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, and Makoto Sekine. --Real time electron-spin-rresonace (ESR) study of plasma-induced surface reactions. ---The 20th International Symposium on Plasma Chemistry (ISPC20), (Philadelphia, U.S.A., July 24-29, 2011), 26M-R1-11:30 -138) Keigo Takeda, Masanori Kato, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, and Masaru Hori. --Spatial distribution of atomic radical generated by ac excited nonequilibrium atmospheric pressure plasma. ---The 20th International Symposium on Plasma Chemistry (ISPC20), (Philadelphia, U.S.A., July 24-29, 2011), 28E-R1-15:20 -139) Keigo Takeda, Hirotoshi Inui, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, and Masaru Hori. --Behavior of hydrogen radical on reduction of copper oxide in atmospheric pressure remote plasma using H2/Ar mixture gases. ---30th International Conference on Phenomena in Ionized Gases (ICPIG), (Belfast, Northern Ireland, UK, August 28 - September 2, 2011), D13-6 -140) Masaru Hori, Yusuke Abe, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, and Makoto Sekine. --Surface reaction of hydrogen radical on plasma enhanced chemical vapour deposition of silicon thin films. ---30th International Conference on Phenomena in Ionized Gases (ICPIG), (Belfast, Northern Ireland, UK, August 28 - September 2, 2011), D13-6 -141) A. Malinowski, M. Sekine, M. Hori, ''Kenji Ishikawa'', H. Kondo, T. Suzuki, T. Takeuchi, H. Yamamoto, A. Jakubowski, L. Lukasiak, D. Tomaszewski. --Sticking coefficient of hydrogen radicals on ArF resist estimated parallel plate structure in conjunction with numerical analysis. --- 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2011), (Osaka University, Osaka, September 8-10, 2011), P-26. -142) Makoto Sekine, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, ''Kenji Ishikawa'', Toshio Hayashi, and Masaru Hori. --(INVITED) Mechanism of highly selective SiO2 etching over Si3N4 using a hydro-fluorocarbon gas. ---4th International conference on advanced plasma technologies, (Strunjan, Slovenia, EU, Sep. 9-13, 2011) -143) A. Malinowski, Masaru Hori, Makoto Sekine, ''Kenji Ishikawa'', Hiroki Kondo, Keigo Takeda. --Development of radical kinetic behavior investigation method and its application for sticking coefficient estimation. ---ESSDERC2011, (Finlandia Hall, Sep. 12-16, 2011), P-26. -144) ''Kenji Ishikawa'', Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori. --(INVITED) In situ ESR measurements for revealing plasma-surface interactions. ---Asian-European International Conference on Plasma Surface Engineering (AEPSE), (Dalian, China, September 19-22, 2011) -145) Fengdong Jia, Keigo Takeda, ''Kenji Ishikawa'', Hiroyuki Kano, Hiroki Kondo, Makoto Sekine and Masaru Hori. --Highly spatial mapping of atomic oxygen density in a 60-Hz atmospheric pressure plasmas using calibrated two-photon laser-induced fluorescence. ---Asian-European International Conference on Plasma Surface Engineering (AEPSE), (Dalian, China, September 19-22, 2011), P-161 -146) Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, ''Kenji Ishikawa'', Toshio Hayashi, Makoto Sekine, Hiroki Kondo, and Masaru Hori. --Modeling of C3F6O/Ar plasma chemistry for SiO2 etching processes. ---Asian-European International Conference on Plasma Surface Engineering (AEPSE), (Dalian, China, September 19-22, 2011), -147) Hiroshi Yamamoto, Kohei Asano, ''Kenji Ishikawa'', Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori. --In situ analysis of plasma-induced modification on porous SiOCH films. ---International Conference on Solid State Devices and Materials (SSDM 2011), (Nagoya, Japan, September 28-30, 2011), C-9-1 -148) Yusuke Abe, Atsushi Fukushima, Y. Lu, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Effect of hydrogen radical-injection on growth property and crystallinity of microcrystalline silicon thin film. ---International Conference on Solid State Devices and Materials (SSDM 2011), (Nagoya, Japan, September 28-30, 2011), L-2-6. -149) Y. Lu, Shang Chen, Ryosuke Kometani, Keigo Takeda, Hiroki Kondo, T. Egawa, Kenji Ishikawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori. --Plasma-induced damage of gan and its recovery by atomic hydrogens at a room temperature. ---International Conference on Solid State Devices and Materials (SSDM 2011), (Nagoya, Japan, September 28-30, 2011), P-6-4. -150) Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori. --Field emission properties of 10-nm pillars of organics fabricated by Pt particles and plasma etching. ---International Conference on Solid State Devices and Materials (SSDM 2011), (Nagoya, Japan, September 28-30, 2011), P-8-3. -151) T. Hagino, Hiroki Kondo, Hiroyuki Kano, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Ultrafast synthesis of nanographene employing an ultrahigh-density in-liquid alcohol plasma. ---International Conference on Solid State Devices and Materials (SSDM 2011), (Nagoya, Japan, September 28-30, 2011), P-13-14. -152) H. J. Cho, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Crystallographic and electrical properties of semiconducting graphene nanoribbon grown employing CH4/H2 plasma. ---International Conference on Solid State Devices and Materials (SSDM 2011), (Nagoya, Japan, September 28-30, 2011), P-13-19. -153) ''Kenji Ishikawa'', Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori. --Polymer surface modification: real-time in situ electron spin resonance study for plasma processes. ---58th International Symposium on American Vacuum Society (AVS), (Nashville, Tennessee, New Mexico, October 30-November 4, 2011), PS+SS-ThA-4 -154) Shang Chen, Yi Lu, Kometani Ryousuke, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Hiroyuki Kano, Hiroshi Amano, Yutaka Tokuda, Takashi Egawa, Makoto Sekine, and Masaru Hori. --Room temperature radical annealing of plasma damaged gallium nitride. ---58th International Symposium on American Vacuum Society (AVS), (Nashville, Tennessee, New Mexico, October 30-November 4, 2011), PS-ThM-11 -155) Fengdong Jia, Keigo Takeda, ''Kenji Ishikawa'', Hirotoshi Inui, Sachiko Iseki, Hiroyuki Kano, Hiroki Kondo, Makoto Sekine, and Masaru Hori. --High performance of 60-Hz atmospheric pressure plasma: basic characteristics and applications. ---58th International Symposium on American Vacuum Society (AVS), (Nashville, Tennessee, New Mexico, October 30-November 4, 2011), SE+PS-WeA-9 -156) Yudai Miyawaki, Yusuke Kondo, Kohei Asano, Makoto Sekine, ''Kenji Ishikawa'', Toshio Hayashi, Keigo Takeda, Hiroki Kondo, and Masaru Hori. --Mechanism of highly selective SiO2 etching over Si3N4, Si and photoresist using hydro-fluorocarbon gases. ---58th International Symposium on American Vacuum Society (AVS), (Nashville, Tennessee, New Mexico, October 30-November 4, 2011), PS1-TuA-11 -157) Atsushi Fukushima, Yusuke Abe, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori. --(Poster award) Relationship between radicals in gas phase and film property of silicon thin films in SiH4/H2 plasma CVD. ---15th International Conference on Thin Films (ICTF 2011), Kyoto TERRSA, Japan, November 8 - 11, 2011, P-S2-01 -158) Jun Kuki, Leyong Yu, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori. --Effects of rf bias on structural properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition. ---15th International Conference on Thin Films (ICTF 2011), Kyoto TERRSA, Japan, November 8 - 11, 2011, P-S2-14 -159) S. Tomiya, M. Minami, ''Kenji Ishikawa'', S. Izumi, M. Kameda, M. Fukasawa, A. Yamaguchi, Masaru Hori, and Tetsuya Tatsumi. --Plasma induced damage to InGaN single quantum well. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, A-5 -160) Naoya Sumi, ''Kenji Ishikawa'', Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori. --(Young Researcher Award) Real-time / in-situ electron spin resonance analysis of surface reactions on organic materials with atomic hydrogen irradiation. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, E-3 -161) Kohei Asano, Hiroshi Yamamoto, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', A. Yamazaki, A. Ito, H. Matsumoto, Makoto Sekine, and Masaru Hori. --Inhibition of roughness formation on 193 nm photoresist during C5HF7/O2/Ar plasma etching. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, B-2 -162) Toshio Hayashi, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu. --Quantum chemical investigation for Si chemical dry etching by flowing NF3 into N2 down flow plasma. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, P1-01 -163) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, ''Kenji Ishikawa'', A. Yamazaki, A. Ito, H. Matsumoto, Toshio Hayashi, Makoto Sekine, and Masaru Hori. --Clarification of highly selective SiO2 etching mechanism using C5HF7 gas. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, P1-03 -164) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Study on photoresist surface modification induced by fluorocarbon etch species. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, P1-04 -165) Shinpei Amasaki, Takuya Takeuchi, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori, N. Sakurai, Hisataka Hayashi, Itsuko Sakai, and Tokuhisa Ohiwa. --Investigation of reaction mechanism at sidewall of through Si via (TSV) etching induced by SF6/O2 plasma. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, P1-06 -166) Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Toshio Hayashi, Makoto Sekine, and Masaru Hori. --Modeling of C3F6O/Ar plasma chemistry for SiO2 etching processes. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, P1-12 -167) Tatsuya Komuro, Keigo Takeda, ''Kenji Ishikawa'', Makoto Sekine, Y. Ohya, Hiroki Kondo, and Masaru Hori. --Spatial distribution of electron density in dc-superposed dual-frequency capacitively coupled plasma (DS-CCP). ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, P1-20 -168) Ryusuke Kometani, Shang Chen, Y. Lu, ''Kenji Ishikawa'', Keigo Takeda, Hiroki Kondo, T. Egawa, H. Amano, Makoto Sekine, and Masaru Hori. --Investigation of GaN exposed to plasma at high temperature. ---International Symposium on Dry Process (DPS), Kyoto, November 10 - 11, 2011, P1-21 -169) Yusuke Abe, Atsushi Fukushima, Ya Lu, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Behavior of radicals in SiH4/H2 plasma for fabrication of solar cell using silicon thin film. ---64th Annual Gaseous Electronics Conference (GEC), (Salt Lake City, Utah, USA, November 14 - 18, 2011), ET1.00004 -170) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, and Masaru Hori. --Study on modification process of photoresist by fluorocarbon ions and radicals. ---64th Annual Gaseous Electronics Conference (GEC), (Salt Lake City, Utah, USA, November 14 - 18, 2011), NR1.00005 -171) Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori, Atsuyo Yamazaki, Azumi Ito, and Hirokazu Matsumoto. --Mechanism of highly selective SiO2 etching over Si using new alternative gas, C5HF7. ---64th Annual Gaseous Electronics Conference (GEC), (Salt Lake City, Utah, USA, November 14 - 18, 2011), NR1.00006 -172) Takehiro Hiraoka, Noboru Ebizuka, Keigo Takeda, Takayuki Ohta, Hiroki Kondo, ''Kenji Ishikawa'', Kodo Kawase, Masafumi Ito, Makoto Sekine, and Masaru Hori. --Evaluation of Penicillium digitatum sterilization using non-equilibrium atmospheric pressure plasma by terahertz time-domain spectroscopy. ---64th Annual Gaseous Electronics Conference (GEC), (Salt Lake City, Utah, USA, November 14 - 18, 2011), DT2.00007 -173) Toshio Hayashi, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu. --Quantum chemical investigation for chemical dry etching by flowing NF3 into H2 down flow plasma. ---64th Annual Gaseous Electronics Conference (GEC), (Salt Lake City, Utah, USA, November 14 - 18, 2011), QRP1.00012 -174) Keigo Takeda, Masanori Kato, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --Quantitatively investigation of activated species generated by ac excited nonequilibrium atmospheric pressure plasma. ---4th International Symposium of Plasma Center for Industrial Application (PLACIA) and Plasma Application Monodzukuri (PLAM) on Reactivation of Manufacturing in Japan by Plasma-Nano Technology, Science Exchange Plaza, Nagoya Science Park, Nagoya, Japan, December 1, 2011 -175) ''Kenji Ishikawa'', Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori. --Surface and interface analysis for plasma processing. ---4th International Symposium of Plasma Center for Industrial Application (PLACIA) and Plasma Application Monodzukuri (PLAM) on Reactivation of Manufacturing in Japan by Plasma-Nano Technology, Science Exchange Plaza, Nagoya Science Park, Nagoya, Japan, December 1, 2011 ---- #include(MenuTab2,notitle) #include(Footer,notitle)