ProceedingIntern24 のバックアップ(No.1)

Proceedings of international conferences

2024

A new challenge for developing novel atomic layer etching: Applying the Leiden frost effect to obtain floating nanomist-assisted vapor etching
- Thi-Thuy-Nga Nguyen, Y. Yamaguchi, K. Shinoda, K. Sun, K. Maeda, K. Yokogawa, M. Izawa, K. Ishikawa, and M. Hori
  - ALE1-TuM-6 at 9:15 am-9:30 am August 6, 2024
Isotropic atomic layer etching of titanium carbide using plasma-exposure and infrared heating
- Kazunori Shinoda, T. Nguyen, Y. Kozuma, K. Yokogawa, M. Izawa, K. Ishikawa, and M. Hori
  - ALE-SuP-18 6:00 pm-8:00 pm August 4, 2024

Process Control of Plasma Etching of SiN, SiO2 and poly-Si films via Enhanced Fragmentation of CHF2CF3 and CF3CH3, CHF2CH3
- Trung Nguyen Tran, Toshio Hayashi, Hiroshi Iwayama, Shih-Nan Hsiao, Makoto Sekine, Masaru Hori, and Kenji Ishikawa
  - ET2.00004 11:00 AM–11:15 AM October 1, 2024
In Situ Electron Spin Resonance and Spin Trapping Study for Kinetics of Free Radical Reactions at Plasma/Liquid Interfaces
- Kenichi Inoue, Takashi Kondo, Kenji Ishikawa, and Masaru Hori
  - GR2.00002 10:30 AM–10:45 AM October 3, 2024
Identification of autophagy inducers on cancer cell treated by plasma-activated lactate solution*
- Taishi Yamakawa, Kae Nakamura, Masaaki Mizuno, Shinya Toyokuni, Hiroaki Kajiyama, Kenji Ishikawa, Masaru Hori, Hiromasa Tanaka
  - HW6.00038 4:00 pm-6:00 pm October 2, 2024

other

Revisiting optical actinometry to utilize multiple argon line ratios for determination of absolute radical densities
Michael Mo, Shih-Nan Hsiao, Fatima Jenina T Arellano, Makoto Sekine, Masaru Hori, and Nikolay Britun
- ET1.00004 8:45 AM–9:00 AM October 1, 2024

Advanced semiconductor plasma processes pioneered by understanding and controlling plasma-surface interactions
- Masaru Hori, M. Sekine, T. Tsutsumi, K. Ishikawa
  - INVITED: PS1-MoA-1 1:30 pm-2:00 pm November 4, 2024

other

The role of PF3 on etching characteristics of SiO2 and SiN using HF-based cryogenic plasma etching analyzed with in situ monitoring techniques
- Shih-Nan Hsiao, M. Sekine, Y. Iijima, R. Suda, M. Yokoi, Y. Kihara, and M. Hori
  - PS2-TuM-15 11:30 am-11:45 am November 5, 2024

Hydrofluoroethane plasmas with CHF2CF3, CF3CH3, and CHF2CH3 on reactions of etching surface of SiN, SiO2 and poly-Si films
- Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, and Kenji Ishikawa
Etching of GaN using Ar/F2 plasma at high temperatures
- J. He, Shohei Nakamura, Atsushi Tanide, Trung Nguyen Tran, Takayoshi Tsutsumi, and Kenji Ishikawa
Study on Selective Dry Etching of Epitaxially Grown Si0.7Ge0.3 and Si using H2 Diluted CF4 Plasma
- K. Ozaki, N. Takada, Yusuke Imai, Takayoshi Tsutsumi, Kenji Ishikawa, Y. Yamamoto, W. C. Wen, and K. Makihara
UV laser ionization desorption of surfaces for GaN etching
- Ryo Takahashi, Ryusei Sakai, Takayoshi Tsutsumi, and Kenji Ishikawa
Surface sulfurization of amorphous carbon films in the chemistry of oxygen plasma for high-aspect-ratio etching
- Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Yuta Aoki, Hiroyasu Sato, Junichi Kawakami, Shuji Tsuno, Shih-Nan Hsiao, Masaru Hori
Plasma-enhanced atomic layer deposition of carbon films
- Liugang Hu, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Kenji Ishikawa, and Masaru Hori

other

Cryogenic plasma etching of SiN films with HF-contained (CF4/H2, HF, HF/Ar) gas mixtures
- Shih-Nan Hsiao, Makoto Sekine, Yuki Iijima, Yoshihide Kihara, and Masaru Hori
Cryogenic plasma etching of SiO2 and Si using PF3/H2 precursors with different hydrogen concentrations
- Chih-Yu Ma, Shih-Nan Hsiao, Yusuke Imai, Makoto Sekine, Nikolay Britun, Yuki Iijima, Yoshihide Kihara, and Masaru Hori
CF4 plasma etching-induced defects at SiO2/Si interface
- S. Nunomura, T. Tsutsumi, N. Takada, M. Fukasawa, and M. Hori