ProceedingIntern24 の変更点

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Proceedings of international conferences

*2024

* ISPlasma on March, 2024

* AVS 24th International Conference on Atomic Layer Deposition (ALD 2024) and the 11th International Atomic Layer Etching Workshop (ALE 2024) at Messukeskus in Helsinki, Finland, on August 4-7, 2024

-A new challenge for developing novel atomic layer etching: Applying the Leiden frost effect to obtain floating nanomist-assisted vapor etching 
--Thi-Thuy-Nga Nguyen, Y. Yamaguchi, K. Shinoda, K. Sun, K. Maeda, K. Yokogawa, M. Izawa, ''K. Ishikawa'', and M. Hori
---ALE1-TuM-6 at 9:15 am-9:30 am August 6, 2024
-Isotropic atomic layer etching of titanium carbide using plasma-exposure and infrared heating
--Kazunori Shinoda, T. Nguyen, Y. Kozuma, K. Yokogawa, M. Izawa, ''K. Ishikawa'', and M. Hori
---ALE-SuP-18 6:00 pm-8:00 pm August 4, 2024

* ICPM at Slovenia, on September 2024


* 77th Annual Gaseous Electronics Conference (GEC) at San Diego, USA on September 30-October 4, 2024

-Process Control of Plasma Etching of SiN, SiO2 and poly-Si films via Enhanced Fragmentation of CHF2CF3 and CF3CH3, CHF2CH3
--Trung Nguyen Tran, Toshio Hayashi, Hiroshi Iwayama,  Shih-Nan Hsiao, Makoto Sekine, Masaru Hori, and ''Kenji Ishikawa''
---ET2.00004 11:00 AM–11:15 AM October 1, 2024
-In Situ Electron Spin Resonance and Spin Trapping Study for Kinetics of Free Radical Reactions at Plasma/Liquid Interfaces
--Kenichi Inoue, Takashi Kondo, ''Kenji Ishikawa'', and Masaru Hori
---GR2.00002 10:30 AM–10:45 AM October 3, 2024
-Identification of autophagy inducers on cancer cell treated by plasma-activated lactate solution*
--Taishi Yamakawa, Kae Nakamura, Masaaki Mizuno, Shinya Toyokuni, Hiroaki Kajiyama, ''Kenji Ishikawa'', Masaru Hori, Hiromasa Tanaka
---HW6.00038 4:00 pm-6:00 pm October 2, 2024

other
-Revisiting optical actinometry to utilize multiple argon line ratios for determination of absolute radical densities
Michael Mo, Shih-Nan Hsiao, Fatima Jenina T Arellano, Makoto Sekine, Masaru Hori, and Nikolay Britun
---ET1.00004 8:45 AM–9:00 AM October 1, 2024

* AVS at Tampa, Florida, USA on October, 2024

-Advanced semiconductor plasma processes pioneered by understanding and controlling plasma-surface interactions
--Masaru Hori, M. Sekine, T. Tsutsumi, K. Ishikawa
---INVITED: PS1-MoA-1 1:30 pm-2:00 pm November 4, 2024

other
-The role of PF3 on etching characteristics of SiO2 and SiN using HF-based cryogenic plasma etching analyzed with in situ monitoring techniques
--Shih-Nan Hsiao, M. Sekine, Y. Iijima, R. Suda, M. Yokoi, Y. Kihara, and M. Hori
---PS2-TuM-15  11:30 am-11:45 am November 5, 2024

* International symposium on dry process (DPS2024) at Hokkaido, Japan on November, 2024

-Hydrofluoroethane plasmas with CHF2CF3, CF3CH3, and CHF2CH3 on reactions of etching surface of SiN, SiO2 and poly-Si films
--Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, and Kenji Ishikawa
-Etching of GaN using Ar/F2 plasma at high temperatures
--J. He, Shohei Nakamura, Atsushi Tanide, Trung Nguyen Tran, Takayoshi Tsutsumi, and Kenji Ishikawa
-Study on Selective Dry Etching of Epitaxially Grown Si0.7Ge0.3 and Si using H2 Diluted CF4 Plasma
--K. Ozaki, N. Takada, Yusuke Imai, Takayoshi Tsutsumi, Kenji Ishikawa, Y. Yamamoto, W. C. Wen, and K. Makihara
-UV laser ionization desorption of surfaces for GaN etching
--Ryo Takahashi, Ryusei Sakai, Takayoshi Tsutsumi, and Kenji Ishikawa
-Surface sulfurization of amorphous carbon films in the chemistry of oxygen plasma for high-aspect-ratio etching
--Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Yuta Aoki, Hiroyasu Sato, Junichi Kawakami, Shuji Tsuno, Shih-Nan Hsiao, Masaru Hori
-Plasma-enhanced atomic layer deposition of carbon films
--Liugang Hu, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Kenji Ishikawa, and Masaru Hori

other
-Cryogenic plasma etching of SiN films with HF-contained (CF4/H2, HF, HF/Ar) gas mixtures
--Shih-Nan Hsiao, Makoto Sekine, Yuki Iijima, Yoshihide Kihara, and Masaru Hori
-Cryogenic plasma etching of SiO2 and Si using PF3/H2 precursors with different hydrogen concentrations
--Chih-Yu Ma, Shih-Nan Hsiao, Yusuke Imai, Makoto Sekine, Nikolay Britun, Yuki Iijima, Yoshihide Kihara, and Masaru Hori
-CF4 plasma etching-induced defects at SiO2/Si interface
--S. Nunomura, T. Tsutsumi, N. Takada, M. Fukasawa, and M. Hori

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