ProceedingIntern10 の変更点


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2010年の国際会議リスト

-47) ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori.
--(INVITED) Nanoscale engineering for plasma etching of future device fabrication.
---10th International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop, (Nagasaki Univ., Nagasaki, Japan, Jan. 8-10, 2010), p. 7.
-48) C. S. Moon, K. Takeda, Makoto Sekine, Y. Setsuhara, M. Shiratani, ''Kenji Ishikawa'', H. Kondo and Masaru Hori.
--A well-established compact combinatorial etching process employing inductively coupled H2/N2 plasma.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), 9a-A06OA, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p.84
-49) S. Chen, H. Kano, S. Den, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M. Sekine and Masaru Hori.
--Radical kinetics in N2-H2 plasma generated by novel high density radical source.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), 9a-B03OB, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 86.
-50) Y. Abe, C. S. Moon, S. Kawashima, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori.
--Surface loss probabilities of h atom on various silicon thin films.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA015A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 124.
-51) H. Inui, Y. Matsudaira, N. Yoshida, N. Iwaki, T. Kawasumi, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine and Masaru Hori.
--Measurement of H radical density in H2/Ar nonequilibrium atmospheric pressure plasma.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA016A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 124.
-52) A. Malinowski, Masaru Hori, Makoto Sekine, T. Suzuki, H. Yamamoto, H. Kondo, ''Kenji Ishikawa'', A. Jakubowski, L. Lukasiak and D. Tomaszewski.
--Modeling of radical tranformation under ‘pape’ structure and method of estimation for surface loss probabilities of radicals.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA020A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 126.
-53) E. Shibata, Makoto Sekine, ''Kenji Ishikawa'', H. Kondo, H. Okamoto and Masaru Hori.
--Porous SiOCH low-k film etch process and its surface reactions employing an alternative fluorocarbon gas C5F10O.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA027A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 130.
-54) Y. Miyawaki, K. Takeda, A. Ito, M. Nakamura, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori.
--SiO2 cotact hole etch mechanism using environment-friendly new gas, C5F7H.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA028A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 130.
-55) T. Takeuchi, Makoto Sekine, H. Toyoda, H. Kondo, ''Kenji Ishikawa'', K. Takeda, S-Y. Kang, I. Sawada and Masaru Hori.
--Analysis of ArF photoresist modified by fluorocarbon ion bombardment.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA030A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 131.
-56) S. Chen, Y. Nagoe, M. Nakai, ''Kenji Ishikawa'', H. Kondo, H. Kano, K.Takeda, T. Tokuda, Makoto Sekine and Masaru Hori.
--Deep-level defect passivation by high density hydrogen radical exposure on ion irradiated Si.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA031A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 132.
-57) H. Kuroda, H. Sugiura, H. Yamamoto, M. Ito, T. Ohta, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori.
--Measurement of Si wafer temperature with metal thin film during plasma process using low-coherence interferometer.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA032A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 132.
-58) H. Shimoeda, Y. Miyawaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M. Hiramatsu, Makoto Sekine and Masaru Hori.
--Effect of oxygen etching on the morphologies of carbon nanowalls.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA082C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 157.
-59) H. Mikuni, T. Kanda, S. Kondo, W. Takeuchi, K. Yamakawa, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M. Hiramastu, Makoto Sekine, and Masaru Hori.
--Initial nucleation in carbon nanowalls growth on Si and SiO2 surface.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA084C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 158
-60) S. Kondo, K. Yasuda, H. Kondo, ''Kenji Ishikawa'', M. Hiramatsu, Makoto Sekine and Masaru Hori.
--Effect of ion irradiation on carbon nanowalls growth.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA085C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 159.
-61) K. Mase, S. Mitsuguchi, S. Kondo, H. Kano, ''Kenji Ishikawa'', H. Kondo, M. Hiramatsu, Makoto Sekine and Masaru Hori.
--Effect of plasma surface treatments on supporting of platinum nanoparticles to graphite materials in supercritical carbon dioxide.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA086C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 159.
-62) S. Iseki, S. Uchida, S. Takashima, T. Ohta, M. Ito, Y. Higashijima, H. Kano, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori.
--Low-temperature treatment using high-density non-equilibrium atmospheric of pressure plasma.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA116C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 174.
-63) Y. Matsudaira, H. Inui, H. Kano, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine and Masaru Hori.
--Synthesis of amorphous carbon films using nonequilibrium atmospheric-pressure plasma.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB025A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 189.
-64) T. Kino, S. Kondo, W. Takeuchi, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori.
--Fabrication of carbon nanomaterials synthesized by plasma enhanced chemical vapor deposition for solar cell applications.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB032A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 192.
-65) S. Kawashima, Y. Abe, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M, Sekine and Masaru Hori.
--Diagnostics in high pressure SiH4/H2 plasma for deposition of microcrystalline Si.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB033A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 193.
-66) ''Kenji Ishikawa'', K. Takeda, H. Kondo, M.Sekine and Masaru Hori.
--Siloxane polymer surface modifications by exposure of plasma-beams: A vibrational sum-frequency generation spectroscopy (SFG) study.
---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB087C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 220.
-67) T. Hayashi, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori, A. Kono and M. Suu.
--Dissociation channel of c-C4F8 to CF2 radical in reactive plasma.
---3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010), (Meijo University, Nagoya Japan, Mar. 11-12, 2010), P-16.
-68) ''Kenji Ishikawa'', N. Ebizuka, K. Takeda, H. Kondo, Makoto Sekine and Masaru Hori.
--Quasi-Bragg grating with sub-wavelength particles.
---3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010), (Meijo University, Nagoya Japan, Mar. 11-12, 2010), P-52.
-69) T. Kino, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori.
--Control in optical properties of amorphous carbon films synthesized by plasma enhanced chemical vapor deposition for solar cell applications.
---International Symposium on Technology Evolution for Silicon Nano-Electronics, (Tokyo Institute of Technology, Tokyo, Japan, June. 3-5, 2010), p. .
-70) H. Yamamoto, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori.
--Modification of Si-O-Si Structure in Porous SiOCH Films by O2 plasma.
---11th International Workshop on Advanced Plasma Processing and Diagnostics, (Ramada Jeju Hotel, Jeju, Korea, July 8-9, 2010), p. .
-71) A. Malinowski, W. Takeuchi, Makoto Sekine, ''Kenji Ishikawa'', H. Kondo, T. Kanda, Masaru Hori, L. Lukasiak, A. Jakubowski.
--Performance estimation of carbon nanowall-based field effect transistor by 3D simulation study.
---The 40th Solid-State Device Research Conference ESSDERC'2010, (Seville, Spain, September 13-17, 2010)
-72) A. Malinowski, L. Lukasiak, A. Jakubowski, D. Tomaszewski, Masaru Hori, Makoto Sekine, ''Kenji Ishikawa'', H. Kondo, T. Suzuki.
--3D TCAD simulation study of the influence of line-width roughness on finFET performance for the 22-nm technology node.
---The 10th Conference "Electron Technology ELTE 2010", (Wroclaw, Poland, September 22 - 25, 2010) 
-73) Shang Chen, Ryosuke Kometani, ''Kenji Ishikawa'', Hiroki Kondo, Keigo Takeda, Hiroki Kano, Yutaka Tokuda, Makoto Sekine, Masaru Hori.
--Analysis of gallium nitride (GaN) surface interacted with chlorine etching plasma beams.
---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), BT1.00005, p. 11.
-74) ''Kenji Ishikawa'', N. Sumi, A. Kono, H. Horibe, K. Takeda, H. Kondo, Makoto Sekine, Masaru Hori.
--In situ electron spin resonance study for plasma-surface interactions.
---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), CTP.00116, p. 36.
-75) Fengdong Jia, Naoya Sumi, ''Kenji Ishikawa'', Hiroyuki Kano, Hirotoshi Inui, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori.
--Time dependence measurement of electron density and temperature of a 60 Hz nonequilibrium atmospheric pressure plasma by laser Thomson scattering.
---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), CTP.00170, p. 46.
-76) Toshio Hayashi, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori, A. Kono, K. Suu.
--Dissociation channels of c-C4F8 to CF2 radical in reactive plasma.
---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), DTP.00135, p. 80.
-77) Masaki Minami, Shigetaka Tomiya, ''Kenji Ishikawa'', Ryosuke Matsumoto, Masanaga Fukasawa, Fumikatsu Uesawa, Masaru Hori, and Tetsuya Tatsumi.
--Analysis of GaN damage induced by Cl2/SiCl4/Ar plasma.
---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), KWP.00053, p. 117.
-78) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Hirotaka Toyoda, Makoto Sekine, Masaru Hori, Ikuo Sawada, Song-Yun Kang.
--Study on modified surface layer of photoresist employing fluorocarbon ion beam and radicals.
---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), KWP.00062, p. 119.
-79) Hiroshi Yamamoto, Kohei Asano, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori.
--Modification of Si-O-Si structure in porous SiOCH low-k films with ions, radicals, and VUV radiation in O2 plasma.
---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), QR2.00005, p. 154.
-80) Yusuke Abe, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori.
--Measurement of surface loss probabilities of hydrogen radicals in plasma-enhanced Si CVD process for solar cell.
---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), SF3.00005, p. 160.
-81) S. Kawashima, Yusuke Abe, Keigo Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, Masaru Hori.
--High-speed growth and crystallinity control of microcrystalline silicon film employing hydrogen radical-injection plasma-enhanced chemical vapor deposition.
---Third International workshop on Thin Film Silicon Solar Cells, Nagasaki, Japan, October 11-14, 2010
-82) Tsuyoshi Yamaguchi, Keigo Takeda, Chishio Koshimizu, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori.
--Highly selective etching of SiOCH over sic films by dual frequency CCP with dc bias superimposed to upper electrode.
---57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS-MoM-11, .
-83) Hiroshi Yamamoto, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori, Tsubasa Imamura, Hisataka Hayashi, Itsuko Sakai, Tokuhisa Ohiwa.
--Mechanism of modification in Si-O-Si structure in porous SiOCH low-k films by H2/N2 plasmas.
---57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-TuA-2.
-84) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, ''Kenji Ishikawa'', Makoto Sekine, Hiroki Kondo, Azumi Ito, Masahiro Nakamura, Masaru Hori.
--Mechanism of highly selective SiO2 etching over photoresist using new alternative gas, C5HF7.
---57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-TuA-8.
-85) ''Kenji Ishikawa'', Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori.
--Polymer surface modification: vibrational sum frequency generation study for plasma etching.
---57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-WeA-8.
-86) Yudai Miyawaki, Yusuke Kondo, Hiroshi Yamamoto, A. Ito, H. Matsumoto, K. Takeda, H. Kondo, ''Kenji Ishikawa'', T. Hayashi, Makoto Sekine, Masaru Hori.
--C5HF7 chemistry for highly selective etch of SiO2 over SiN and Si.
---32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), H-3, pp. . 
-87) H. Yamamoto, Y. Miyawaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, Masaru Hori, A. Ito, H. Matsumoto.
--Observation of 193-nm photoresist surface exposed to etching plasma employing C5HF7 gas chemistry.
---32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), P2-G2, pp. .
-88) Takuya Takeuchi, Shinpei Amasaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, H. Toyoda, Makoto Sekine, Masaru Hori, S.-Y. Kang, I. Sawada.
--Investigation of the modified ArF photoresist surface during fluorocarbon plasma etching process.
---32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), P2-G3, pp. .
-89) Shinpei Amasaki, Takuya Takeuchi, Keigo Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, Masaru Hori, N. Sakurai, H. Hayashi, I. Sakai, T. Ohiwa.
--Investigation of Si etch reaction induced by SF6/O2 plasma.
---32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), D-2, pp. .
-90) ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori.
--In line electron spin resonance study of plasma-surface interactions for plasma etching.
---The 3rd International Symposium of Plasma Center for Industrial Applications (PLACIA) & Plasma Application Monodzukuri(PLAM) on Activation of Manufacturing in Nagoya with Plasma Technology, (Naogya, November 17, 2010)
-91) M. Hori , ''Kenji Ishikawa'', H. Kondo, K. Takeda, H.Yamamoto, M. Sekine.
--(INVITED)  Plasma induced surface and/or sub-surface interactions on low-k dielectrics.
---The Second International Symposium on Plasma Nanoscience (iPlasmaNano-II), (Murramarang Resort, New South Wales, Australia, December 12-15, 2010).
-92) ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori.
--(INVITED)  In line electron spin resonance study of plasma-surface interaction for plasma etching.
---20th MRS-Japan Academic Symposium, Session A: Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-12-I.
-93) Naoya Sumi,''Kenji Ishikawa'',Akihiro Kono,Hideo Horibe,Keigo Takeda,Hiroki Kondo,Makoto Sekine,Masaru Hori.
--Real-time electron-spin-resonance measurement of plasma induced surface interactions.
---20th MRS-Japan Academic Symposium, Session A: Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-21-M.
-94) Tokushige Kino,Hiroki Kondo,''Kenji Ishikawa'',Makoto Sekine,Masaru Hori.
--Controlled synthesis of amorphous carbon films by radical-injection plasma-enhanced chemical vapor deposition for solar cell.
---20th MRS-Japan Academic Symposium, Session A : Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-15-M.


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