#author("2020-11-20T22:47:28+09:00","default:ishikawa","ishikawa") #include(MenuTab1,notitle) 2010年の国際会議リスト -47) ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori. --(INVITED) Nanoscale engineering for plasma etching of future device fabrication. ---10th International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop, (Nagasaki Univ., Nagasaki, Japan, Jan. 8-10, 2010), p. 7. -48) C. S. Moon, K. Takeda, Makoto Sekine, Y. Setsuhara, M. Shiratani, ''Kenji Ishikawa'', H. Kondo and Masaru Hori. --A well-established compact combinatorial etching process employing inductively coupled H2/N2 plasma. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), 9a-A06OA, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p.84 -49) S. Chen, H. Kano, S. Den, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M. Sekine and Masaru Hori. --Radical kinetics in N2-H2 plasma generated by novel high density radical source. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), 9a-B03OB, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 86. -50) Y. Abe, C. S. Moon, S. Kawashima, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori. --Surface loss probabilities of h atom on various silicon thin films. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA015A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 124. -51) H. Inui, Y. Matsudaira, N. Yoshida, N. Iwaki, T. Kawasumi, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine and Masaru Hori. --Measurement of H radical density in H2/Ar nonequilibrium atmospheric pressure plasma. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA016A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 124. -52) A. Malinowski, Masaru Hori, Makoto Sekine, T. Suzuki, H. Yamamoto, H. Kondo, ''Kenji Ishikawa'', A. Jakubowski, L. Lukasiak and D. Tomaszewski. --Modeling of radical tranformation under ‘pape’ structure and method of estimation for surface loss probabilities of radicals. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA020A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 126. -53) E. Shibata, Makoto Sekine, ''Kenji Ishikawa'', H. Kondo, H. Okamoto and Masaru Hori. --Porous SiOCH low-k film etch process and its surface reactions employing an alternative fluorocarbon gas C5F10O. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA027A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 130. -54) Y. Miyawaki, K. Takeda, A. Ito, M. Nakamura, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori. --SiO2 cotact hole etch mechanism using environment-friendly new gas, C5F7H. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA028A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 130. -55) T. Takeuchi, Makoto Sekine, H. Toyoda, H. Kondo, ''Kenji Ishikawa'', K. Takeda, S-Y. Kang, I. Sawada and Masaru Hori. --Analysis of ArF photoresist modified by fluorocarbon ion bombardment. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA030A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 131. -56) S. Chen, Y. Nagoe, M. Nakai, ''Kenji Ishikawa'', H. Kondo, H. Kano, K.Takeda, T. Tokuda, Makoto Sekine and Masaru Hori. --Deep-level defect passivation by high density hydrogen radical exposure on ion irradiated Si. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA031A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 132. -57) H. Kuroda, H. Sugiura, H. Yamamoto, M. Ito, T. Ohta, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori. --Measurement of Si wafer temperature with metal thin film during plasma process using low-coherence interferometer. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA032A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 132. -58) H. Shimoeda, Y. Miyawaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M. Hiramatsu, Makoto Sekine and Masaru Hori. --Effect of oxygen etching on the morphologies of carbon nanowalls. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA082C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 157. -59) H. Mikuni, T. Kanda, S. Kondo, W. Takeuchi, K. Yamakawa, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M. Hiramastu, Makoto Sekine, and Masaru Hori. --Initial nucleation in carbon nanowalls growth on Si and SiO2 surface. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA084C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 158 -60) S. Kondo, K. Yasuda, H. Kondo, ''Kenji Ishikawa'', M. Hiramatsu, Makoto Sekine and Masaru Hori. --Effect of ion irradiation on carbon nanowalls growth. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA085C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 159. -61) K. Mase, S. Mitsuguchi, S. Kondo, H. Kano, ''Kenji Ishikawa'', H. Kondo, M. Hiramatsu, Makoto Sekine and Masaru Hori. --Effect of plasma surface treatments on supporting of platinum nanoparticles to graphite materials in supercritical carbon dioxide. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA086C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 159. -62) S. Iseki, S. Uchida, S. Takashima, T. Ohta, M. Ito, Y. Higashijima, H. Kano, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori. --Low-temperature treatment using high-density non-equilibrium atmospheric of pressure plasma. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA116C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 174. -63) Y. Matsudaira, H. Inui, H. Kano, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine and Masaru Hori. --Synthesis of amorphous carbon films using nonequilibrium atmospheric-pressure plasma. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB025A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 189. -64) T. Kino, S. Kondo, W. Takeuchi, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori. --Fabrication of carbon nanomaterials synthesized by plasma enhanced chemical vapor deposition for solar cell applications. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB032A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 192. -65) S. Kawashima, Y. Abe, K. Takeda, ''Kenji Ishikawa'', H. Kondo, M, Sekine and Masaru Hori. --Diagnostics in high pressure SiH4/H2 plasma for deposition of microcrystalline Si. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB033A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 193. -66) ''Kenji Ishikawa'', K. Takeda, H. Kondo, M.Sekine and Masaru Hori. --Siloxane polymer surface modifications by exposure of plasma-beams: A vibrational sum-frequency generation spectroscopy (SFG) study. ---2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB087C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 220. -67) T. Hayashi, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori, A. Kono and M. Suu. --Dissociation channel of c-C4F8 to CF2 radical in reactive plasma. ---3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010), (Meijo University, Nagoya Japan, Mar. 11-12, 2010), P-16. -68) ''Kenji Ishikawa'', N. Ebizuka, K. Takeda, H. Kondo, Makoto Sekine and Masaru Hori. --Quasi-Bragg grating with sub-wavelength particles. ---3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010), (Meijo University, Nagoya Japan, Mar. 11-12, 2010), P-52. -69) T. Kino, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori. --Control in optical properties of amorphous carbon films synthesized by plasma enhanced chemical vapor deposition for solar cell applications. ---International Symposium on Technology Evolution for Silicon Nano-Electronics, (Tokyo Institute of Technology, Tokyo, Japan, June. 3-5, 2010), p. . -70) H. Yamamoto, K. Takeda, H. Kondo, ''Kenji Ishikawa'', Makoto Sekine and Masaru Hori. --Modification of Si-O-Si Structure in Porous SiOCH Films by O2 plasma. ---11th International Workshop on Advanced Plasma Processing and Diagnostics, (Ramada Jeju Hotel, Jeju, Korea, July 8-9, 2010), p. . -71) A. Malinowski, W. Takeuchi, Makoto Sekine, ''Kenji Ishikawa'', H. Kondo, T. Kanda, Masaru Hori, L. Lukasiak, A. Jakubowski. --Performance estimation of carbon nanowall-based field effect transistor by 3D simulation study. ---The 40th Solid-State Device Research Conference ESSDERC'2010, (Seville, Spain, September 13-17, 2010) -72) A. Malinowski, L. Lukasiak, A. Jakubowski, D. Tomaszewski, Masaru Hori, Makoto Sekine, ''Kenji Ishikawa'', H. Kondo, T. Suzuki. --3D TCAD simulation study of the influence of line-width roughness on finFET performance for the 22-nm technology node. ---The 10th Conference "Electron Technology ELTE 2010", (Wroclaw, Poland, September 22 - 25, 2010) -73) Shang Chen, Ryosuke Kometani, ''Kenji Ishikawa'', Hiroki Kondo, Keigo Takeda, Hiroki Kano, Yutaka Tokuda, Makoto Sekine, Masaru Hori. --Analysis of gallium nitride (GaN) surface interacted with chlorine etching plasma beams. ---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), BT1.00005, p. 11. -74) ''Kenji Ishikawa'', N. Sumi, A. Kono, H. Horibe, K. Takeda, H. Kondo, Makoto Sekine, Masaru Hori. --In situ electron spin resonance study for plasma-surface interactions. ---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), CTP.00116, p. 36. -75) Fengdong Jia, Naoya Sumi, ''Kenji Ishikawa'', Hiroyuki Kano, Hirotoshi Inui, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori. --Time dependence measurement of electron density and temperature of a 60 Hz nonequilibrium atmospheric pressure plasma by laser Thomson scattering. ---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), CTP.00170, p. 46. -76) Toshio Hayashi, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori, A. Kono, K. Suu. --Dissociation channels of c-C4F8 to CF2 radical in reactive plasma. ---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), DTP.00135, p. 80. -77) Masaki Minami, Shigetaka Tomiya, ''Kenji Ishikawa'', Ryosuke Matsumoto, Masanaga Fukasawa, Fumikatsu Uesawa, Masaru Hori, and Tetsuya Tatsumi. --Analysis of GaN damage induced by Cl2/SiCl4/Ar plasma. ---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), KWP.00053, p. 117. -78) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Hirotaka Toyoda, Makoto Sekine, Masaru Hori, Ikuo Sawada, Song-Yun Kang. --Study on modified surface layer of photoresist employing fluorocarbon ion beam and radicals. ---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), KWP.00062, p. 119. -79) Hiroshi Yamamoto, Kohei Asano, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori. --Modification of Si-O-Si structure in porous SiOCH low-k films with ions, radicals, and VUV radiation in O2 plasma. ---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), QR2.00005, p. 154. -80) Yusuke Abe, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori. --Measurement of surface loss probabilities of hydrogen radicals in plasma-enhanced Si CVD process for solar cell. ---63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), SF3.00005, p. 160. -81) S. Kawashima, Yusuke Abe, Keigo Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, Masaru Hori. --High-speed growth and crystallinity control of microcrystalline silicon film employing hydrogen radical-injection plasma-enhanced chemical vapor deposition. ---Third International workshop on Thin Film Silicon Solar Cells, Nagasaki, Japan, October 11-14, 2010 -82) Tsuyoshi Yamaguchi, Keigo Takeda, Chishio Koshimizu, Hiroki Kondo, ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori. --Highly selective etching of SiOCH over sic films by dual frequency CCP with dc bias superimposed to upper electrode. ---57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS-MoM-11, . -83) Hiroshi Yamamoto, Keigo Takeda, ''Kenji Ishikawa'', Hiroki Kondo, Makoto Sekine, Masaru Hori, Tsubasa Imamura, Hisataka Hayashi, Itsuko Sakai, Tokuhisa Ohiwa. --Mechanism of modification in Si-O-Si structure in porous SiOCH low-k films by H2/N2 plasmas. ---57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-TuA-2. -84) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, ''Kenji Ishikawa'', Makoto Sekine, Hiroki Kondo, Azumi Ito, Masahiro Nakamura, Masaru Hori. --Mechanism of highly selective SiO2 etching over photoresist using new alternative gas, C5HF7. ---57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-TuA-8. -85) ''Kenji Ishikawa'', Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori. --Polymer surface modification: vibrational sum frequency generation study for plasma etching. ---57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-WeA-8. -86) Yudai Miyawaki, Yusuke Kondo, Hiroshi Yamamoto, A. Ito, H. Matsumoto, K. Takeda, H. Kondo, ''Kenji Ishikawa'', T. Hayashi, Makoto Sekine, Masaru Hori. --C5HF7 chemistry for highly selective etch of SiO2 over SiN and Si. ---32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), H-3, pp. . -87) H. Yamamoto, Y. Miyawaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, Masaru Hori, A. Ito, H. Matsumoto. --Observation of 193-nm photoresist surface exposed to etching plasma employing C5HF7 gas chemistry. ---32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), P2-G2, pp. . -88) Takuya Takeuchi, Shinpei Amasaki, K. Takeda, ''Kenji Ishikawa'', H. Kondo, H. Toyoda, Makoto Sekine, Masaru Hori, S.-Y. Kang, I. Sawada. --Investigation of the modified ArF photoresist surface during fluorocarbon plasma etching process. ---32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), P2-G3, pp. . -89) Shinpei Amasaki, Takuya Takeuchi, Keigo Takeda, ''Kenji Ishikawa'', H. Kondo, Makoto Sekine, Masaru Hori, N. Sakurai, H. Hayashi, I. Sakai, T. Ohiwa. --Investigation of Si etch reaction induced by SF6/O2 plasma. ---32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), D-2, pp. . -90) ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori. --In line electron spin resonance study of plasma-surface interactions for plasma etching. ---The 3rd International Symposium of Plasma Center for Industrial Applications (PLACIA) & Plasma Application Monodzukuri(PLAM) on Activation of Manufacturing in Nagoya with Plasma Technology, (Naogya, November 17, 2010) -91) M. Hori , ''Kenji Ishikawa'', H. Kondo, K. Takeda, H.Yamamoto, M. Sekine. --(INVITED) Plasma induced surface and/or sub-surface interactions on low-k dielectrics. ---The Second International Symposium on Plasma Nanoscience (iPlasmaNano-II), (Murramarang Resort, New South Wales, Australia, December 12-15, 2010). -92) ''Kenji Ishikawa'', Makoto Sekine, Masaru Hori. --(INVITED) In line electron spin resonance study of plasma-surface interaction for plasma etching. ---20th MRS-Japan Academic Symposium, Session A: Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-12-I. -93) Naoya Sumi,''Kenji Ishikawa'',Akihiro Kono,Hideo Horibe,Keigo Takeda,Hiroki Kondo,Makoto Sekine,Masaru Hori. --Real-time electron-spin-resonance measurement of plasma induced surface interactions. ---20th MRS-Japan Academic Symposium, Session A: Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-21-M. -94) Tokushige Kino,Hiroki Kondo,''Kenji Ishikawa'',Makoto Sekine,Masaru Hori. --Controlled synthesis of amorphous carbon films by radical-injection plasma-enhanced chemical vapor deposition for solar cell. ---20th MRS-Japan Academic Symposium, Session A : Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-15-M. ---- #include(MenuTab2,notitle) #include(Footer,notitle)