ProceedingIntern24 をテンプレートにして作成

開始行:
#include(MenuTab1,notitle) Proceedings of international conferences *2024 * ISPlasma on March, 2024 * AVS 24th International Conference on Atomic Layer Depos... -A new challenge for developing novel atomic layer etchin... --Thi-Thuy-Nga Nguyen, Y. Yamaguchi, K. Shinoda, K. Sun, ... ---ALE1-TuM-6 at 9:15 am-9:30 am August 6, 2024 -Isotropic atomic layer etching of titanium carbide using... --Kazunori Shinoda, T. Nguyen, Y. Kozuma, K. Yokogawa, M.... ---ALE-SuP-18 6:00 pm-8:00 pm August 4, 2024 * ICPM at Slovenia, on September 2024 * 77th Annual Gaseous Electronics Conference (GEC) at San... -Process Control of Plasma Etching of SiN, SiO2 and poly-... --Trung Nguyen Tran, Toshio Hayashi, Hiroshi Iwayama, Sh... ---ET2.00004 11:00 AM–11:15 AM October 1, 2024 -In Situ Electron Spin Resonance and Spin Trapping Study ... --Kenichi Inoue, Takashi Kondo, ''Kenji Ishikawa'', and M... ---GR2.00002 10:30 AM–10:45 AM October 3, 2024 -Identification of autophagy inducers on cancer cell trea... --Taishi Yamakawa, Kae Nakamura, Masaaki Mizuno, Shinya T... ---HW6.00038 4:00 pm-6:00 pm October 2, 2024 other -Revisiting optical actinometry to utilize multiple argon... Michael Mo, Shih-Nan Hsiao, Fatima Jenina T Arellano, Mak... ---ET1.00004 8:45 AM–9:00 AM October 1, 2024 * AVS at Tampa, Florida, USA on October, 2024 -Advanced semiconductor plasma processes pioneered by und... --Masaru Hori, M. Sekine, T. Tsutsumi, K. Ishikawa ---INVITED: PS1-MoA-1 1:30 pm-2:00 pm November 4, 2024 other -The role of PF3 on etching characteristics of SiO2 and S... --Shih-Nan Hsiao, M. Sekine, Y. Iijima, R. Suda, M. Yokoi... ---PS2-TuM-15 11:30 am-11:45 am November 5, 2024 * International symposium on dry process (DPS2024) at Hok... -Hydrofluoroethane plasmas with CHF2CF3, CF3CH3, and CHF2... --Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, and... -Etching of GaN using Ar/F2 plasma at high temperatures --J. He, Shohei Nakamura, Atsushi Tanide, Trung Nguyen Tr... -Study on Selective Dry Etching of Epitaxially Grown Si0.... --K. Ozaki, N. Takada, Yusuke Imai, Takayoshi Tsutsumi, K... -UV laser ionization desorption of surfaces for GaN etching --Ryo Takahashi, Ryusei Sakai, Takayoshi Tsutsumi, and Ke... -Surface sulfurization of amorphous carbon films in the c... --Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Yuta Aoki, Hiroyas... -Plasma-enhanced atomic layer deposition of carbon films --Liugang Hu, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Ke... other -Cryogenic plasma etching of SiN films with HF-contained ... --Shih-Nan Hsiao, Makoto Sekine, Yuki Iijima, Yoshihide K... -Cryogenic plasma etching of SiO2 and Si using PF3/H2 pre... --Chih-Yu Ma, Shih-Nan Hsiao, Yusuke Imai, Makoto Sekine,... -CF4 plasma etching-induced defects at SiO2/Si interface --S. Nunomura, T. Tsutsumi, N. Takada, M. Fukasawa, and M... ---- #include(MenuTab2,notitle)

終了行:
#include(MenuTab1,notitle) Proceedings of international conferences *2024 * ISPlasma on March, 2024 * AVS 24th International Conference on Atomic Layer Depos... -A new challenge for developing novel atomic layer etchin... --Thi-Thuy-Nga Nguyen, Y. Yamaguchi, K. Shinoda, K. Sun, ... ---ALE1-TuM-6 at 9:15 am-9:30 am August 6, 2024 -Isotropic atomic layer etching of titanium carbide using... --Kazunori Shinoda, T. Nguyen, Y. Kozuma, K. Yokogawa, M.... ---ALE-SuP-18 6:00 pm-8:00 pm August 4, 2024 * ICPM at Slovenia, on September 2024 * 77th Annual Gaseous Electronics Conference (GEC) at San... -Process Control of Plasma Etching of SiN, SiO2 and poly-... --Trung Nguyen Tran, Toshio Hayashi, Hiroshi Iwayama, Sh... ---ET2.00004 11:00 AM–11:15 AM October 1, 2024 -In Situ Electron Spin Resonance and Spin Trapping Study ... --Kenichi Inoue, Takashi Kondo, ''Kenji Ishikawa'', and M... ---GR2.00002 10:30 AM–10:45 AM October 3, 2024 -Identification of autophagy inducers on cancer cell trea... --Taishi Yamakawa, Kae Nakamura, Masaaki Mizuno, Shinya T... ---HW6.00038 4:00 pm-6:00 pm October 2, 2024 other -Revisiting optical actinometry to utilize multiple argon... Michael Mo, Shih-Nan Hsiao, Fatima Jenina T Arellano, Mak... ---ET1.00004 8:45 AM–9:00 AM October 1, 2024 * AVS at Tampa, Florida, USA on October, 2024 -Advanced semiconductor plasma processes pioneered by und... --Masaru Hori, M. Sekine, T. Tsutsumi, K. Ishikawa ---INVITED: PS1-MoA-1 1:30 pm-2:00 pm November 4, 2024 other -The role of PF3 on etching characteristics of SiO2 and S... --Shih-Nan Hsiao, M. Sekine, Y. Iijima, R. Suda, M. Yokoi... ---PS2-TuM-15 11:30 am-11:45 am November 5, 2024 * International symposium on dry process (DPS2024) at Hok... -Hydrofluoroethane plasmas with CHF2CF3, CF3CH3, and CHF2... --Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, and... -Etching of GaN using Ar/F2 plasma at high temperatures --J. He, Shohei Nakamura, Atsushi Tanide, Trung Nguyen Tr... -Study on Selective Dry Etching of Epitaxially Grown Si0.... --K. Ozaki, N. Takada, Yusuke Imai, Takayoshi Tsutsumi, K... -UV laser ionization desorption of surfaces for GaN etching --Ryo Takahashi, Ryusei Sakai, Takayoshi Tsutsumi, and Ke... -Surface sulfurization of amorphous carbon films in the c... --Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Yuta Aoki, Hiroyas... -Plasma-enhanced atomic layer deposition of carbon films --Liugang Hu, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Ke... other -Cryogenic plasma etching of SiN films with HF-contained ... --Shih-Nan Hsiao, Makoto Sekine, Yuki Iijima, Yoshihide K... -Cryogenic plasma etching of SiO2 and Si using PF3/H2 pre... --Chih-Yu Ma, Shih-Nan Hsiao, Yusuke Imai, Makoto Sekine,... -CF4 plasma etching-induced defects at SiO2/Si interface --S. Nunomura, T. Tsutsumi, N. Takada, M. Fukasawa, and M... ---- #include(MenuTab2,notitle)

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