SiO2Etching85 をテンプレートにして作成

開始行:
[[SiO2Etch]] *5. Conclusions **5.1 Conclusion of this study Plasma etching is an important technology of the microfab... Fluorocarbon plasma etching is used to process silicon ox... The author has been investigating the surface reaction in... ***(1) Surface interactions of gaseous CFx radicals (Sect... Fluorocarbon radicals (CFx) have been considered to be on... When the plasma density ne was low (ne < 10&SUP(11); cm&S... ***(2) Surface interactions of CFx ions (Section 3.) Since the vertical process ability of plasma etching is c... Although the knowledge obtained so far is important, it i... The chemical composition of CFx&SUP(+); was changed by ma... ***(3) Real-time observation of etching surface in situ d... In the etching process of silicon oxide film by fluorocar... The deposition process of the a-C:F film during etching w... ***(4) In vacuo electron spin resonance of the etched sam... In addition, the author has investigated the unpaired ele... The ESR measurement of the dangling bonds in the plasma-d... As described above, the author has analyzed the surface r... **5.2 Future challenges and prospects Based on the results of this study, the following issues ... ***(1) Improvement of temporal resolution for in situ rea... The surface during etching has been observed "in-situ" us... ***(2) Implement in profile simulators Next, the interaction of individual chemical species such... ***(3) Understanding of elementary processes of surface r... Is it sufficient to divide the surface reaction model int... ***(4) In situ observation using in vacuo electron spin r... As for the "in-situ" observation of the surface dangling ... Finally, the author hopes that further understanding of t... ----

終了行:
[[SiO2Etch]] *5. Conclusions **5.1 Conclusion of this study Plasma etching is an important technology of the microfab... Fluorocarbon plasma etching is used to process silicon ox... The author has been investigating the surface reaction in... ***(1) Surface interactions of gaseous CFx radicals (Sect... Fluorocarbon radicals (CFx) have been considered to be on... When the plasma density ne was low (ne < 10&SUP(11); cm&S... ***(2) Surface interactions of CFx ions (Section 3.) Since the vertical process ability of plasma etching is c... Although the knowledge obtained so far is important, it i... The chemical composition of CFx&SUP(+); was changed by ma... ***(3) Real-time observation of etching surface in situ d... In the etching process of silicon oxide film by fluorocar... The deposition process of the a-C:F film during etching w... ***(4) In vacuo electron spin resonance of the etched sam... In addition, the author has investigated the unpaired ele... The ESR measurement of the dangling bonds in the plasma-d... As described above, the author has analyzed the surface r... **5.2 Future challenges and prospects Based on the results of this study, the following issues ... ***(1) Improvement of temporal resolution for in situ rea... The surface during etching has been observed "in-situ" us... ***(2) Implement in profile simulators Next, the interaction of individual chemical species such... ***(3) Understanding of elementary processes of surface r... Is it sufficient to divide the surface reaction model int... ***(4) In situ observation using in vacuo electron spin r... As for the "in-situ" observation of the surface dangling ... Finally, the author hopes that further understanding of t... ----

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