Publication のバックアップ(No.119)

Publication

Total 359 peer-reviewed papers (journal 320 papers + 15 paper in Japanese + 15 peer-reviewed proceedings + 9 other papers);

6038 {7129} total citations ; h-index 37 , {39 Scopus }

Topics FC Fluorocarbon plasmas, HN hydrogen-nitrogen mixture plasmas, APP Atmospheric pressure plasmas, PA Plasma agriculture, and PM Plasma medicine, dia Plasma processes for diamond, C nano-carbon, Si nanocrystalline silicon, GaN Gallium nitrides, MG Metal gates, Pt Platinum,

Methods IR Infrared spectroscopic studies, LIF Laser induced fluorescence, ESR Electron spin (Paramagnetic) resonance, Beam Surface reactions under ion beam irradiation, QC Quantum chemical computation

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2026

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2025

[320] OPEN Etch Cycle etching of SiO2 film using Ar plasma irradiation of CHF3-condensed layer at cryogenic temperature below −120°C
- Japanese Journal of Applied Physics 64 (12), 126002 pp. 1-5 (December 22, 2025). (DOI)
  - Kuangda Sun, Suganthamalar Selvaraj, Masahiro Hazumi, Shih-Nan Hsiao, Makoto Sekine, Chihiro Abe, Toshiyuki Sasaki, Hisataka Hayashi, Kenji Ishikawa, and Masaru Hori

[319] OPEN Etch Formation of condensed CHF3 layer on SiO2 film at cryogenic temperatures for etching process applications
- Japanese Journal of Applied Physics 64 (12), 128002 pp. 1-4 (December 9, 2025). (DOI)
  - Kuangda Sun, Suganthamalar Selvaraj, Masahiro Hazumi, Shih-Nan Hsiao, Makoto Sekine, Chihiro Abe, Toshiyuki Sasaki, Hisataka Hayashi, Kenji Ishikawa, and Masaru Hori

[318] OPEN Q1 HFC Reaction surface analysis of plasma etching of SiN, SiO2, and poly-Si films using low-global warming potential CF3CHCF2 gas
- Applied Surface Science 710, 163955 pp. 1-10 (November 30, 2025). (DOI)
  - Tran Trung Nguyen, and Kenji Ishikawa

[317] OPEN Etch Revolutionizing reactive ion etching: ion-enhanced surface autocatalytic reactions enabling ultra-high throughput using cryogenic hydrogen-fluoride plasma
- Chemical Engineering Journal 522, 167517 pp. 1-9 (October 15, 2025). (DOI)
  - Shih-Nan Hsiao, Yusuke Imai, Makoto Sekine, Ryutaro Suda, Yuki Iijima, Yoshihide Kihara, Kenji Ishikawa, and Masaru Hori

[316] OPEN C The effect of electrical stimulation on the cellular response of human mesenchymal stem cells grown on silicon carbide-coated carbon nanowall scaffolds
- Bioengineering 12 (10), 1073 (October 2, 2025). (DOI)
  - Koki Ono, Ayako Tanaka, Kenji Ishikawa, Wakana Takeuchi, Kenichi Uehara, Shigeo Yasuhara, Masaru Hori, and Hiromasa Tanaka

[315] OPEN Etch Controlling etch selectivity of TiAlC and TiN films in nonhalogen N-H-O plasmas: Implications for DRAM peripheral transistor fabrication
- Surfaces and Interface 74, 107664 pp. 1-13 (October 1, 2025). (DOI)
  - Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, and Masaru Hori

[314] OPEN Q1 C Platinum nanoparticle-decorated carbon nanowall anodes fabricated via top-down approach for abiotic glucose fuel cells
- Scientific Reports 15, 32772 pp. 1-14 (September 25, 2025). (DOI)
  - Ryusei Sakai, Kenji Ishikawa, Hiroki Kondo, Kiichi Niitsu, Mineo Hiramatsu, Hiromasa Tanaka, and Masaru Hori

[313] OPEN Etch GaN Selective etching of GaN over AlGaN through low-damage AlGaN surface processing at high temperatures
- Journal of Applied Physics 138 (5), 055701 pp. 1-11 (August 1, 2025). (DOI)
  - Shohei Nakamura, Atsushi Tanide, and Kenji Ishikawa

[312] Free Etch GaN Atomically self-limited removal of Cl2-plasma-modified GaN by F2-added Ar plasma at high temperature of 300°C
- Japanese Journal of Applied Physics 64, 07SP9 pp. 1-8 (July 2025). (DOI)
  - Atsushi Tanide, Shohei Nakamura, He Jia, and Kenji Ishikawa

[311] Free Etch Study on selective dry etching of epitaxially grown Si0.7Ge0.3 and Si using H2 diluted CF4 plasma
- Japanese Journal of Applied Physics 64, 07SP10 pp. 1-7 (July 2025). (DOI)
  - Kotaro Ozaki, Yusuke Imai, Takayoshi Tsutsumi, Noriharu Takada, Kenji Ishikawa, Yuji Yamamoto, Wei-Chen Wen, and Katsunori Makihara

[310] OPEN Q1 Etch MG Selective dry etching of TiAlC over TiN using nonhalogen N2/H2 plasma
- Applied Surface Science 691, 162665 pp. 1-13 (May 15, 2025). (DOI)
  - Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Shih-Nan Hsiao, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, and Masaru Hori

[309] OPEN Q1 Etch Pt Low-temperature atomic layer etching of platinum via sequential wet-like reactions of plasma oxidation and complexation
- Applied Surface Science 687, 162325 pp. 1-15 (April 1, 2025). (DOI)
  - Thi-Thuy-Nga Nguyen, Daijiro Akagi, Takeshi Okato, Kenji Ishikawa, and Masaru Hori

[308] OPEN Q1 HFC Valence fragmentation dynamics of a promising low global warming etching gas CF3CHCF2
- Scientific Reports 15, 9507 pp. 1-10 (March 18, 2025). (DOI)
  - Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, and Kenji Ishikawa

[307] OPEN Q1 Etch Hydrofluoroethane plasma etching of SiN, SiO2, and poly-Si films with CHF2CF3, CF3CH3, and CHF2CH3
- Applied Surface Science 684, 161815 pp. 1-10 (March 1, 2025). (DOI)
  - Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, Makoto Sekine, Masaru Hori, and Kenji Ishikawa

[306] Review Developments in low-temperature plasma applications in Asia
- Reviews of Modern Plasma Physics 9, 6 pp. 1-72 (February 8, 2025). (DOI), allotment writing the section of 5 Plasma‑assisted material processing, pp. 37-47
  - Pankaj Attri, Kenji Ishikawa, Nozomi Takeuchi, Tomohiro Nozaki, Rajdeep Singh Rawat, Zhitong Chen, Bo Ouyang, Takamasa Okumura, Danni Fu, Katsuyuki Takahashi, Dae-Yeong Kim, Xiaozhong Chen, Kunihiro Kamataki, Koichi Takaki, Eun Ha Choi, Masaru Hori, Kazunori Koga, and Masaharu Shiratani

[305] OPEN C Achieving the in-plane orientation of carbon nanowalls: Implications for sensing, energy harvesting, and nano-bio devices
- ACS Applied Nano Materials 8 (6), pp. 2660–2668 (February 2, 2025). (DOI)
  - Shintaro Iba, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Mineo Hiramatsu, and Masaru Hori

[304] OPEN PM Nanoscale visualization of the anti-tumor effect of a plasma-activated Ringer' s lactate solution
- Faraday Discussions 257, pp. 212-223 (February 1, 2025). (DOI)
  - Junichi Usuda, Kenshin Yagyu, Hiromasa Tanaka, Masaru Hori, Kenji Ishikawa, and Yasufumi Takahashi

[303] OPEN Q1 C Plasma-enhanced atomic layer deposition of carbon films employing a cyclic process of N2/H2 plasma and α, α'-dichloro-p-xylene as a precursor
- Applied Surface Science 681, 161485 pp. 1-10 (February 1, 2025). (DOI)
  - Liugang Hu, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Kenji Ishikawa, and Masaru Hori

[302] Etch GaN Rate-controlled cycle etching of GaN by cycle exposure to BCl3 and F2-added Ar plasma at a substrate temperature of 400°C
- Journal of Vacuum Science and Technology B 43, 022202 pp. 1-13 (January 27, 2025). (DOI)
  - Shohei Nakamura, Atsushi Tanide, Soichi Nadahara, Kenji Ishikawa, and Masaru Hori

[301] OPEN C Analysis of the synergetic effect of process parameters of hydrogenated amorphous carbon deposition in plasma-enhanced chemical vapor deposition using machine learning
- Diamond & Related Materials 151, 111687 pp. 1-12 (January 1, 2025). (DOI)
  - Yusuke Ando, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

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