Reviews1 の変更点


#author("2024-08-10T21:46:25+09:00","default:ishikawa","ishikawa")
#author("2024-08-10T21:46:52+09:00","default:ishikawa","ishikawa")
Back to [[Publication]]

This is a list of review articles about nanoprocess, nanofabrication, and nanotechnology, including plasma etching and plasma-enhanced film deposition

[2023]

-[267] &color(white,red){OPEN};    ''Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies''
--Japanese Journal of Applied Physics 62 (SA), SA0803 pp. 1-37 (February 2023). [[(DOI):https://doi.org/10.35848/1347-4065/ac9189]]
---Makoto Kambara, ... and ''Kenji Ishikawa''

An understanding of the multiscale hierarchies of complex behaviors of plasma-related phenomena, including plasma generation in physics and chemistry, transport of energy and mass through the sheath region, and morphology- and geometry-dependent surface reactions is presently required to control systems with the state-of-the-art deep learning, machine learning, and artificial intelligence. Prediction of plasma parameters and discovery of processing recipes are asserted by outlining the emerging science-based, data-driven approaches.

----
[2019]

-[202] ''Review of methods for the mitigation of plasma-induced damage to low-dielectric-constant interlayer dielectrics used for semiconductor logic device interconnects''
--Plasma Processes and Polymers 16 (9), 1900039 pp. 1-20 (September, 2019). [[(DOI):https://doi.org/10.1002/ppap.201900039]], [[(Repository):https://www.researchgate.net/publication/334053718_Review_of_methods_for_the_mitigation_of_plasma-induced_damage_to_low-dielectric-constant_interlayer_dielectrics_used_for_semiconductor_logic_device_interconnects]]
---Hideshi Miyajima, ''Kenji Ishikawa'', Makoto Sekine, and Masaru Hori

The developments in advanced interconnect technology for semiconductor logic devices for the mitigation of plasma-induced damage to low-dielectric-constant (low-k) materials, including fluorosilicate glass and carbon-doped silicon oxide is reviewed. 
----

-[195] &color(white,red){Free}; ''Progress and perspectives in dry processes for leading-edge manufacturing of devices: Toward intelligent processes and virtual product development''
--Japanese Journal of Applied Physics 58 (SE), SE0804 pp. 1-21 (May, 2019) [[(DOI):https://doi.org/10.7567/1347-4065/ab163b]]
//---Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima, and ''Kenji Ishikawa''

The methods for process monitoring, equipment control, modeling and simulation, and controlling plasma-induced damage, are required to control advanced plasma processes in high-volume manufacturing of semiconductor device production. The authors address the challenges of implementing "virtual product development" utilizing information technology.
----

-[194] &color(white,red){Free}; ''Progress and perspectives in dry processes for emerging multidisciplinary applications: How can we improve our use of dry processes?''
--Japanese Journal of Applied Physics 58 (SE), SE0803 pp. 1-17 (May, 2019) [[(DOI):https://doi.org/10.7567/1347-4065/ab163a]]
//---Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima, and ''Kenji Ishikawa''

Plasma medicine and plasma agriculture are currently topical applications that make use of atmospheric pressure plasmas. 
----

-[193] &color(white,red){Free}; ''Progress and perspectives in dry processes for nanoscale feature fabrication: Fine pattern transfer and high-aspect-ratio feature formation''
--Japanese Journal of Applied Physics 58 (SE), SE0802 pp. 1-24 (May, 2019) [[(DOI):https://doi.org/10.7567/1347-4065/ab1638]]
//---Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima, and ''Kenji Ishikawa''

The isotropic and anisotropic nature of both film deposition and etching is versatile for nanoscale fabrication of three-dimensional features, such as high-aspect-ratio (HAR) features. 
----

-[192] &color(white,red){Free}; ''Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: A physics and chemistry perspective''
--Japanese Journal of Applied Physics 58 (SE), SE0801 pp. 1-14 (May, 2019) [[(DOI):https://doi.org/10.7567/1347-4065/ab163e]]
---''Kenji Ishikawa'', et al.
//---''Kenji Ishikawa'', Tatsuo Ishijima, Tatsuru Shirafuji, Silvia Armini, Emilie Despiau-Pujo, Richard A. Gottscho, Keren J. Kanarik, Gert J. Leusink, Nathan Marchack, Takahide Murayama, Yasuhiro Morikawa, Gottlieb S. Oehrlein, Sangwuk Park, Hisataka Hayashi, and Keizo Kinoshita

The focus of this review is advances in atomic layer etching and area-selective deposition with activation or deactivation, especially in terms of materials scaling and variety. Control of high-aspect-ratio feature fabrication in semiconductor manufacturing and etched shapes of interior features at the nanoscale are needed. Issues related to profile distortion have received much attention. State-of-the-art techniques used in semiconductor manufacturing are reviewed and future challenges are outlined.
----

[2018]

//&color(white,blue){Etch}; 
-[161] &color(white,red){OPEN}; ''Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?''
--Japanese Journal of Applied Physics 57 (6S2), 06JA01 pp. 1-18 (May, 2018). [[(DOI):https://doi.org/10.7567/JJAP.57.06JA01]] Total citations: 62 (Mar. 2024)
--Japanese Journal of Applied Physics 57 (6S2), 06JA01 pp. 1-18 (May, 2018). [[(DOI):https://doi.org/10.7567/JJAP.57.06JA01]] Total citations: 66 (Aug. 2024)
---''Kenji Ishikawa'', et al.
//Kazuhiro Karahashi, Tatsuo Ishijima, Sung Il Cho, Simon Elliott, Dennis Hausmann, Dan Mocuta, Aaron Wilson, and Keizo Kinoshita

The focus of this review is placed on advances in fabrication technology that control surface reactions on three-dimensional features, as well as state-of-the-art techniques used in semiconductor manufacturing with a brief summary of future challenges.
----

[2017]
//&color(white,blue){Etch}; 
-[130] ''Progress and prospects in nanoscale dry processes - How can we control atomic layer reactions?''
--Japanese Journal of Applied Physics 56 (6S2), 06HA02 pp. 1-13 (June, 2017). [[(DOI):https://doi.org/10.7567/JJAP.56.06HA02]], [[(Repository):https://www.researchgate.net/publication/317287557_Progress_and_prospects_in_nanoscale_dry_processes_How_can_we_control_atomic_layer_reactions]] Total citations: 43 (Mar. 2024)
---''Kenji Ishikawa'', et al.
//Kazuhiro Karahashi, Takanori Ichiki, Jane P. Chang, Steven M. George, W. M. M. Kessels, Hae June Lee, Stefen Tinck, Jung Hwan Um, and Keizo Kinoshita

The authors address the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The focus of this review is placed on advances in the development of fabrication technologies for state-of-the-art techniques used in nanoscale and atomic scale semiconductor manufacturing with a brief summary of future challenges.

#include(Footer,notitle)