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  • 1 (2021-02-28 (日) 14:24:17)

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Blog202102

Surface activated bonding

Tadatomo Suga, U Tokyo

F. S. Ohuchi and T. Suga (1994)

Surface activated bonding of silicon wafers at room temperature Appl. Phys. Lett. 68, 2222 (1996); DOI

Suga ECS abstract web

Surface activated bonding (SAB) : bonding of metal to metal and to ceramics at room temperature.

Surface activation process : bombardment of the surfaces by Ar ions or neutral atoms in ultra-high vacuum.

Al-Al and Al-Si3N4, Cu-Cu, Si-Si

2012 Lantechnical Service Co., Ltd (President: Yoshiie Matsumoto)

bonding of polymer film to polymer film and polymer film to glass without the use of adhesives.

polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and Kapton (polyimide)

argon (Ar) ion beam bombardment in an ultrahigh vacuum at room temperature.

An intermediate 10nm-Si layer and an iron (Fe) nano-adhesion layer of less than 1nm thickness were deposited prior to the bonding

Aymi Industries

真空学会誌

Mitsubishi Heavy Industries

Cu/SiO2 hybrid bonding obtained by surface-activated bonding method at room temperature using Si ultra-thin films web;https://www.sciencedirect.com/science/article/pii/S2590007218300145

1 keV Ar ion beam

Plasma bonding Wikipedia

Grenoble

Fraunhofer M. Wiemer 3D packaging

D. Wünsch and M. Wiemer and M. Gabriel and T. Gessner (2010). "Low temperature wafer bonding for microsystems using dielectric barrier discharge". MST News. 1/10. pp. 24–25.

R. E. Belford & S. Sood Surface activation using remote plasma for silicon to quartz wafer bonding. Microsystem Technologies volume 15, pages 407–412 (2009) https://link.springer.com/article/10.1007/s00542-008-0710-4

6 Plasma activated bonding, In Handbook of Wafer Bonding edited by Peter Ramm, James Jian-Qiang Lu, (John Wiley & Sons, Feb 13, 2012)