PLASMA CHEMICAL PHYSICS AROUND AND ON SEMICONDUCTOR SURFACES

J. Dieleman, (Philips Res. Lab.)

1

REACTION PROCESS OF DRY ETCHING

J. Nishizawa, N. Hayasaka and M. Motoyoshi (Tohoku Univ.)

9

MECHANISM OF Si REACTIVE ION BEAM ETCHING

S. Tachi, K. Miyake and T. Tokuyama (Hitachi)

17

CARBON-FREE REACTIVE ION ETCHING OF SILICON BY SiF₄ PLASMA

H. Matsumoto and T. Sugano (Univ. of Tokyo)

25

A DEVELOPING MODEL OF HEATING-UP ELECTRON BEAM SHOWER

M. Yamada, J. Tamano, K. Yoneda*, S. Morita and S. Hattori (Nagoya Univ., *Meijo Univ.)

33

REACTIVE ION ETCHING OF P-DOPED POLY-Si USING CF₃Br/Cl₂

M. Shibagaki, T. Watanabe, H. Takeuchi and Y. Horiike (Toshiba)

39

ANISOTROPIC ETCHING OF POLY-Si BY RIE

M. Yoneda, H. Itakura*, K. Nishioka* and H. Abe (Mitsubishi, *Computer Dev. Labs.)

47

Si AND SiO₂ ETCHING UNDER THE LOW SELF BIAS VOLTAGE

T. Arikado and Y. Horiike (Toshiba)

55

PLASMA ETCHING OF SPUTTERED SiO₂ FILMS

H. Shibata, T. Serikawa and A. Okamoto (Musashino ECL)

61

HIGH RATE REACTIVE ION ETCHING

H. Okano, T. Yamazaki and Y. Horiike (Toshiba)

69

SURFACE AREA EFFECT IN REACTIVE ION ETCHING

H. Itakura, K. Nishioka, M. Yoneda* and H. Abe* (Computer Dev. Labs, * Mitsubishi)

75

Si DRY ETCHING AND ITS APPLICATION TO U-GROOVE ISOLATION

T. Kure and Y. Tamaki (Hitachi)

83

EXPERIMENTAL ARTIFACTS AND PROFILE CONTROL IN PLASMA ETCHING OF SILICON

R. S. Horwath and C. B. Zarowin (IBM Y. H.)

91

REACTIVE ION ETCHING OF GaAs IN CCl₄ , CCl₂F₂, AND CF₄-BASED DISCHARGE

R. E. Klinger and J. E. Greene (Univ. of Illinois)

93

SELECTIVE DRY ETCHING OF AlGaAs-GaAs HETEROJUNCTIONS

K. Hikosaka, T. Mimura, and K. Joshin (Fujitsu Labs)

97

REACTIVE ION BEAM ETCHING -APPLICATION TO GaAs INTEGRATED CIRCUITS FABRICATION-

K. Yamasaki, K. Asai and K. Kurumada (Musashino ECL)

105

ANGULAR AND TEMPERATURE DEPENDENCES EMPLOYING Ar⁺/Cl₂ SYSTEM

T. Meguro, T. Itoh, H. Okano* and Y. Horiike* (Waseda Univ., *Toshiba)

113

DIRECTIONAL DRY ETCHING OF SILICON BY A REACTIVE NOZZLE-JET

H. Akiya (Musashino ECL)

119

PLASMA ACTIVATED DEPOSITION AND PROPERTIES OF PHOSPHOSILICATE GLASS FILM

A. Takamatsu, M. Shibata, H. Sakai and T. Yoshimi (Hitachi)

127

INSULATION CHARACTERISTICS OF PCVD SiN FILMS

M. Maeda, E. Yamamoto and H. Nakamura (Musashino ECL)

135

CVD SILICON OXIDE BELOW 100��C UTILIZING PHOTOCHEMICAL COMBUSTION OF SiH₄ AND O₂

R. F. Sarkozy (Carlsbad Res. Cent., Hughes Aircraft)

143