November 18-19, 1982

LASER-ENHANCED CHEMICAL ETCHING OF SOLIDS FOR MICROELECTRONICS

T. J. Chuang (IBM)

1

PHOUSPHOROUS DOPED POLY-Si ETCHING EMPLOYING Cl2 - EFFECT OF SOBSTRATE TEMPERATURE AND PHOTO IRRADIATION -

H. Okano, T. Yamazaki, M. Sekine and Y. Hori-ike (Toshiba)

6

MAGNETO-MICROWAVE PLASMA ETCHING

S. Nishimatsu, K. Suzuki, K. Ninomiya and S. Okudaira (Hitachi)

11

GROWTH MECHANISM OF PLASMA CVD SILICON NITRIDE

M. Dohjo, M. Hirose and Y. Osaka (Hiroshima Univ.)

17

REACTIONS OF ATOMIC FLUOLINE AND XENON DIFLUORIDE WITH SILICON\ A MOLECULAR BEAM SIMULATION OF PLASMA ETCHING

M. J. Vasile (Bell Labs.)

23

REACTIVE ION ETCHING OF POLY-Si USING CF3Br/N2

K. Hayakawa and M. Takigawa (Toyota Cent. Res. & Dev. Labs.)

28

ANISOTROPIC ETCHING OF POLY-SILICON FILM

M. Yoneda, K. Nishioka, H. Itakura, M. Hatanaka and H. Abe* (Computer Dev. Lab., *Mitsubishi)

34

REACTIVE ION ETCHING OF Si AND SiO2 WITH NF3

A. Kawamura, T. Tsuneto, T. Ohachi, T. Fuji-i* and I. Taniguchi (Doshisha Univ, *Daikin, Kogyo)

39

CHARACTERISTICS OF SiO2 REACTIVE SPUTTER ETCHING USING MAGNETIC FIELD

K. Hirobe, H. Azuma and K. Kadota (Hitachi)

45

ANISOTROPIC ETCHING OF MoSi2/POLY-Si DOUBLE LAYER FILMS WITH CHLORINATED GAS PLASMA

K. Nishioka, H. Itakura, M. Yoneda, W. Wakamiya, H. Arima and H. Abe (Mitsubishi)

51

PLASMA-INDUCED DAMAGE IN SILICON

R. G. Fricer, F. J. Montillo, S. R. Mader and W. K. Chu (IBM)

57

STUDY ON RIE INDUCED DAMAGE IN Si

T. Taguchi, M. Watanabe, K. Kanzaki and Y. Zohta (Toshiba)

60

CONTAMINATION IN AlSi DRY ETCHING

H. Itakura, M. Yoneda, T. Shibano, W. Wakamiya, T. Matsukawa* and H. Abe* (Computer Dev. Lab., *Mitsubishi)

64

GaAs REACTIVE ION ETCHING

S. Semura, H. Saitoh and K. Asakawa(Optoelect. Joint Res. Lab.)

68

REACTIVE SPUTTER ETCHING OF GaAs

N. Yabumoto, M. Oshima and S. Maeyama (Musashino ECL)

73

REACTIVE ION ETCHING OF GaAs AND AlGaAs \ APPLICATION TO SEMICONDUCTOR LASER FABRICATION \

N. Nagasaka, H. Okano and N. Motegi (Toshiba)

79

MECHANISM OF RESIST DIRECTIONAL ETCING

T. Arikado (Toshiba)

85

DRY DEVELOPMENT CHARACTERISTICS OF A GRAFT POLYMERIZED RESIST AND ITS APPLICATION TO A MULTI-LAYER RESIST

M. Yamada, J. Tamano, K. Yoneda*, S. Morita* and S. Hattori (Nagoya Univ., *Meijo Univ.)

90

A NOVEL DRY DEVELOPABLE PHOTORESIST

M. Tsuda*, A. Yokota, M, Yabuta, W. Kanai, K. Kashiwagi, S. Oikawa* and H. Nakane (*Chiba Univ., Tokyo Ohka Kogyo)

94

CHARACTERIZATION OF FILMS DEPOSITED BY MERCURY-SENSITIZED PHOTO-CVD

H. Ito, K. Mizuguchi, K. Miyake, M. Hatanaka and H. Abe (Mitsubishi)

100

R.F. PLASMA ANODIZATION OF SILICON

M. Fukuyama, O. Takai and Y. Hisamatsu (Univ. of Tokyo)

106

R.F. PLASMA ANODIZATION WITHOUT AN EXTERAL D. C. BIAS POWER SUPPLY

O. Takai, M. Fukuyama and Y. Hisamatsu (Univ. of Tokyo)

DRY PLASMA PROCESSING IN ELECTRONIC PACKAGING

R. S. Horwath (IBM)

117