SURFACE PROCESSES IN PLASMA-ASSISTED ETCHING ENVIRONMENTS

H. F. Winters, J. W. Coburn and T. J. Chuang (IBM, San Jose)

1

GATE BREAKDOWN PHENOMENA DURRING REACTIVE ION ETCHING PROCESS

Y. Yoshida and T. Watanabe (IC Division, Toshiba)

4

Al AND Si ETCHING MECHANISM �\HOT SPOT MODEL�\

S. Tachi (Central Research Lab., Hitachi)

8

ANISOTROPIC ETCHING OF Al-Si FILMS

T. Shirbano, H. Itakura, M. Yoneda, and H. Abe (LSI R&D Lab., Mitsubishi)

14

ANISOTROPIC ETCHING OF POLY-Si FILMS

M. Yoneda, H. Itakura, T. Shibano, and H. Abe (LSI R&D Lab., Mitsubishi)

20

ETCHING CHARACTERISTICS BY ECR ION SOURCE

K. Numajiri, M. Shibagaki, M. Sasaki, and T. Tsukada (Anelva)

25

ETCHING CHARACTERISTIES OF POLY-Si FILMS BY ECR

H. Itakura, M. Yoneda, T. Shibano, H. Abe, and H. Nakata (LSI R&D Lab., Mitsubishi)

31

GRANULAR Si-RICH OXIDE AND Si-RICH NITRIDE FILMS DEPOSITED BY PLASMA CVD

S. Yokoyama, M. Hirose, and Y. Osaka (Faculty of Engineering, Hiroshima University)

35

MULTI-LAYER RESIST SYSTEM USING A NEW PLANARIZATION METHOD

I. Higashikawa, T. Arikado (R&D Center IC Lab., Toshiba)

41

CHEMICAL CHARACTERIZATION OF RESIST SURFACES EXPOSED TO PLASMA AND UV/OZONE AMBIENTS

H. Yanazawa, Y. Suzuki, M. Suzuki, H. Obayashi, N. Hashimoto (Central Research Lab., Hitachi)

47

MULTI LAYER RESIST FORMED BY PLASMA POLYMERIZATION AND ITS CHARACTERISTIC

J. Tamano, M. Ichikawa, S. Morita*, and S. Hattori (Dept. of Elect. Eng., Nagoya University, *Dept. of Elect. Eng., Meijo University)

51

THE ROLE OF INORGANIC METERIALS IN DRY DEVELOPED RESIST TECHNOLGY

G. N. Taylor, T. M. Wolf, and L. E. Stillwagon (Bell Labs.)

55

PLASMA STUDIES AND SILICON DEFECT GENERATION

J. A. Bondur, and R. G. Frieser (IBM, Hopewell Junction)

63

PLASMA ETCHING IN GaAs IC FABRICATION

H. Sugahara and M. Suzuki (Atsugi Elect. Comm. Lab., NTT)

67

REACTIVE ION ETCHING OF GaAs AND AlGaAs FOR INTEGRATED OPTICS

H. Yamada, H. Ito, and H. Inada (Res. Inst of Elect. Comm., Tohoku University)

73

STUDY ON GaAs AND GaAlAs ETCHING BY A NEW REACTIVE ION BEAM ETCHING SYSTEM

S. Sugata, and K. Asakawa (Optoelectronics Joint Research Lab.)

79

PHOTO-CVD SILICON NITRIDE FILMS

K. Hamano, Y. Numasawa, and K. Yamazaki (VLSI Division, NEC)

85

DEPOSITION OF INSULATOR FILM BY PHOTO-CVD

H. Ito, M. Hatanaka, H. Abe, and H. Nakata (LSI R&D Lab., Mitsubishi)

91

PHOTO EXCITED POLY-Si ETCHING �\CONDUCTION TYPE AND RESISTIVITY DEPENDENCES�\

M. Sekine, H. Okano, and Y. Horiike (Research and Development Center, Toshiba)

97