October 11-12, 1984

APPLICATIONS OF LASERS TO THIN FILM DEPOSITION

M. Hanabusa (Toyohashi University of Technology)

1

AN a-Si DEPOSITION USING A UNIFIED REACTOR WITH A LAMP

K. Aota, S. Suzuki, K. Kamisako, T. Hiramoto*, and Y. Tarui (Faculty of Technology, Tokyo University of Agriculture and Technology, *Usio Inc.)

6

DEPOSITION OF a-Si:H FILMS BY PHOTO-CVD METHOD

N. Mutsukura, S. Sato, K. Kobayashi and Y. Machi (Faculty of Engineering, Tokyo Denki University)

12

DETERMINATION OF THE EFFECTIVE DIFFUSION LENGTH AND LIFETIME OF THE ACTIVATED SPECIES IN THE PHOTO-CVD OF a-Si FROM SiH4

K. Kamisako, K. Aota, T. Nakano, T. Sugiura, Y. Komiya* and Y. Tarui (Faculty of Technology, Tokyo University of Agriculture and Technology, *Electrotechnical Labs.)

18

ION BEAM INDUCED ETCHING

M. W. Geis, J. N. Randall, N. N. Efremow, G. A. Lincoln, S. W. Pang and N. P. Economou (Lincoln Lab., MIT)

24

DRY ETCHING CHARACTERISTICS OF WSix GATE METAL FOR GaAs LSI

M. Miyazaki, T. Yasuda, J. Masuki, and N. Hashimoto (Central Research Lab., Hitachi)

25

SURFACE DAMAGE INTRODUCED BY PLASMA ETCHING IN CF4 GAS AND A NOVEL DRY TECHNIQUE FOR DAMAGE ELIMINATION

M. Kobayashi, T. Kamijoh, H. Takano and M. Sakuta (Research Lab., Oki)

31

EFFECTS OF HYDROGEN PLASMA PRE-TREATMENT FOR GaAs SCHOTTKY CONTACT

M. Muraguchi, K. Ohwada, and M. Hirayama (Atsugi Elect. Comm. Lab., NTT)

37

REACTIVE ION ETCHING OF GaAs and AlGaAs IN BCl3+Cl2 MIXTURE -APPLICATION TO LASER DIODE FABRICATION-

H. Tamura and H. Kurihara (Electron Device Engineering Lab., Toshiba)

43

REACTIVE ION ETCHING OF GaAs AND AlGaAs FOR INTEGRATED OPTICS II

H. Yamada, A. Mizuyoshi, H. Ito and H. Inaba (Res. Inst. of Elect. Comm. Tohoku University)

49

MULTI-LAYER RESIST FORMED BY IN A REVOLVING SUBSTRATE REACTOR AND ITS DEVELOPMENT

J. Tamano, T. Kato, S. Morita* and S. Hattori (Faculty of Engineering, Nagoya University, *Faculty of Engineering, Meijo University)

55

DEEP UV HARDENING OF PHOTO-AND ELECTRON RESIST PATTERNS

Y. Takasu, T. Ohkuma and Y. Todokoro (Semiconductor R & D Center, Matsushita Electronics Co.)

60

LASER ANNEALING EFFECT ON EVAPORATED ORGANIC FILMS OF STEARIC ACID

M. Tawata, K. Yoneda, S. Morita, M. Hori* and S. Hattori* (Faculty of Engineering, Meijo University, Faculty of Engineering, Nagoya University)

66

DIRECT PATTERNING BY LASER MICROCHEMISTRY

D. J. Ehrlich (Lincoln Lab., MIT)

72

ANISOTROPIC ETCHING OF n+ POLY-Si USING EXCIMER LASER BEAM AND EVALUATION OF RADIATION DAMAGE

M. Sekine, H. Okano and Y. Horiike (Toshiba VLSI Research Center, Toshiba)

74

PHOTO INDUCED OXIDATION OF Si IN O2/Cl2 GAS MIXTURE USING XeCl EXCIMER LASER

K. Horioka, H. Okano, and Y. Horiike (Toshiba VLSI Reseach Center, Toshiba)

80

KINETICS OF FLUORINE-ENHANCED OXIDATION OF SILICON

M. Morita and M. Hirose (Faculty of Engineering, Hiroshima University)

84

FREE RADICAL REACTIONS OF IMPORTANCE IN THE PLASMAS USED FOR SEMICONDUCTOR PROCESSING

K. R. Ryan and I. C. Plumb (CSIRO Division of Applied Physics)

90

ETCHING MECHANISM OF ARSENIC-DOPED POLYSTALINE SILICON IN CHLORINE PLASMA

N. Awaya and Y. Arita (Atsugi Elect. Comm. Lab., NTT)

98

ION ASSISTED ETCHING USING Cl2 -Si ETCHING RATE DEPENDENCE ON Ar+ ION DENSITY-

E. Ikawa, N. Aoto and Y. Kurogi (Microelectronics Res. Labs. NEC)

104

ENERGY DISTRIBUTION AND DIRECTIONALITY OF ION IN REACTIVE ION ETCHING

M. Sato and Y. Arita (Atsugi Elect. Comm. Lab., NTT)

109

DRY ETCHING CHARACTERISTICS IN NARROW DEEP GROOVES

M. Oda, H. Namatsu, S. Ohki, H. Akiya and T. Shibata (Atsugi Elect. Comm. Lab., NTT)

115

SILICON SUBSTRATE ETCHING AND PATTERN PROFILE CONTROL

H. Shimizu, D. Kimura, H. Komiya and R. Kawabata (Semiconductor Re. Lab., SHARP Co.)

121

ELECTRON COLLISION CROSS SECTIONS AND ELECTRON SWARM PARAMETERS IN MONOSILANE AND DISILANE

M. Hayashi (Nagoya Inst. of Tech.)

127

LOADING EFFECT OF SILICON ETCHING IN NF3

M. Miyake, S. Yoshikado, T. Ohachi, T. Fujii* and I. Taniguchi (Faculty of Engineering, Doshisha University, *Department of Chemistry, DAIKIN KOGYO Co.)

133