EXCIMER LASER INDUCED DEPOSITION OF InP
V. M. Donnelly (AT & T Bell Labs.)
1
AN a-Si:H DEPOSITION USING AN UNIFIED REACTOR WITH LAMP IN NEW METHOD
K. Aota, S. Suzuki, K. Mizuguchi and Y. Tarui (Faculty of Technology, Tokyo University of Agriculture and Technology)
7
DIRECT PATTERN WRITING OF SILICON BY ARGON LASER INDUCED CVD
A. Ishizu, H. Miki, Y. Inoue*, T. Nishimura* and Y. Akasaka* (Materials & Electronic Devices Lab., Mitsubishi Electric, *LSI R & D Lab., Mitsubishi Electric)
13
DEPOSITION OF DIEIECTRIC FILMS ON InP BY PHOTO-CVD
N. Yoshida, K. Mizuguchi, T. Murotani and K. Fujikawa (LSI R & D Lab., Mitsubishi Electric)
19
Si SURFACE TREATMENT USING DEEP UV IRRADIATION
E. Ikawa, S. Sugito and Y. Kurogi (Microelectronics Res. Labs, NEC)
25
CHARACTERISTICS OF PHOTO EXCITED ETCHING OF CRYSTALLINE Si IN CHLORINE AMBIENT
K. Ozawa (Fujitsu Labs)
30
PHOTO-ASSISTED ANISOTROPIC ETCHING OF n+ POLY-Si AND SINGLE CRYSTAL Si EMPLOYING REACTIVE SPECIES GENERATED BY A MICROWAVE DISCHARGE
N. Hayasaka, S. Suto, M. Sekine, H. Okano and Y. Horiike (VLSI Research Center, Toshiba)
34
ANISOTROPIC ETCHING OF SiO2 BY EXCIMER LASER IRRADIATION
S. Yokoyama, Y. Yamakage and M. Hirose (Faculty of Engineering, Hiroshima University)
39
MICROPROCESSING FOR LASER FUSION TARGET FABRICATION
T. Norimatsu, H. Katayama, Y. Izawa, S. Nakai and C. Yamanaka (Institute of Laser Engineering, Osaka University)
44
PLASMA OXIDATION OF SILICON AND ITS APPLICATIONS IN FET DEVICES
A. K. Ray (IBM T.J. Watson Research Center)
50
OXIDATION OF Si BY MICROWAVE EXCITED OXYGEN PLASMA THROUGH PROTECTIVE Al COATING
T. Matsuda, H. Niu, M. Maeda and M. Takai (Department of Electronics, Himeji Institute of Technology)
57
DEPOSITION OF HARD CARBON FILMS BY RF GLOW DISCHARGE METHOD
K. Kobayashi, N. Mutsukura and Y. Machi (Faculty of Engineering, Tokyo Denki University)
63
LASER DIAGNOSTICS OF A PLASMA CVD SYSTEM OF a-Si:H
Y. Matsumi, H. Yoshikawa, T. Hayashi and S. Komiya (ULVAC)
69
PLASMA HARDENING OF PHOTO\AND ELECTRON RESIST PATTERNS
H. Watanabe, H. Yamashita, Y. Takasu and Y. Todokoro (Kyoto Research Lab. Matsushita Electronics Co.)
75
DRY DEVELOPMENT ON PLASMA POLYMERIZED RESIST BY SYNCHROTRON RADIATION
M. Hori, H. Yamada, T. Yoneda*, S. Morita* and S. Hattori (Faculty of Engineering, Nagoya University, *Faculty of Engineering, Meijo University)
81
ION BOMBARDMENT INDUCED SURFACE MODIFICATIONS IN PLASMA ETCHING PROCESSES
T. M. Mayer, M. S. Ameen, D. J. Vitkavage and T. Mizutani (Department of Chemistry, University of North Calolina)
87
CHEMICAL PROCESSES IN FLUORINE\BASED ETCHING REACTIONS
F. R. Mcfeely (IBM T. J. Watson Research Center)
92
HIGH RATE ETCHING OF SILICON DIOXIDE
K. Kim, O. Wilkinson, T. Tsukada, and K. Ukai (ANELVA Co.)
95
ETCHED SHAPE CONTROL OF SINGLE CRYSTALLINE SILICON IN REACTIVE ION ETCHING CONTAINING CHLORINE
M. Sato, K. Sakuma and Y. Arita (Atsugi Elect. Comm. Labs., NTT)
102
INFLUENCE OF IONS SCATTERED AT MASK EDGES ON DRY ETCHED WALL PROFILES
S. Ohki, M. Oda and T. Shibata (Atsugi Elect. Comm. Labs, NTT)
108
SINGLE CRYSTALLINE SILICON ETCHING CHARACTERISTICS AND PROFILE SIMULATION
T. Arikado, K. Horioka, M. Sekine, H. Okano and Y. Horiike (VLSI Research Center, Toshiba)
114
EFFECT OF RESIST MATERIALS AND PATTERN WIDTH ON SILICON DRY ETCHING
Y. Takasu, H. Okada and Y. Todokoro (Kyoto Research Labs. Matsushita Electronic Co.)
120
CONTRIBUTION ON PHOTORESIST MASK TO ANISOTROPIC ETCHING OF ALUMINUM
I. Hasegawa, Y. Yoshida, Y. Naruke and T. Watanabe (IC Division, Toshiba)
126
MOS GATE INSULATOR BREAKDOWN CAUSED BY EXPOSURE TO PLASMA
Y. Kawamoto (Central Research Lab., Hitachi)
132
GaAs AND AlGaAs SURFACE CLEANING USING RADICAL BEAM GUN WITH COMPACT ECR PLASMA SOURCE
K. Asakawa, and S. Sugata (Optoelectronics Joint Research Labs.)
138
CHARACTERIZATION OF ION BOMBARDMENT\INDUCED DAMAGE ON GaAs AND AlGaAs USING SCHOTTKY ELECTRODE TECHNIQUE
S. Sugata, and K. Asakawa (Optoelectronics Joint Research Labs.)
144
REACTIVE ION ETCHING OF GaAsP AND GaAs FOR INTEGRATED OPTICAL DEVICES
H. Yamada, K. Otsuka, H. Ito and H. Inaba (Res. Inst. of Elect. Comm., Tohoku University)
149
REACTIVE ION BEAM ETCHING OF GaAs/AlGaAs USING ECR EXCITED PLASMA
M. Sasaki, K. Numajiri and Y. Ino (ANELVA Co.)
154
