SPECTROSCOPIC DIAGNOSTICS OF GLOW DISCHARGES: FREQUENCY EFFECTS
R. A. Gottscho (AT&T Bell Laboratories)
1
SPATIAL DISTRIBUTION OF CF2 AND ITS RELATION TO FLUOROCARBON POLYMER DEPOSITION IN C2F6 RF PLASMA ANALYSIS BY LASER INDUCED FLUORESCENCE METHOD
M. Kitamura, H. Akiya and T. Urisu (Atugi Elect. comm. Lab., NTT)
7
SOME ASPECTS OF POLYMER FORMATION DURING REACTIVE ION ETCHING OF SiO2 ON GaAs
I. Ohta, M. Hagio and M. Kazumura (Semiconductor Lab., Matsushita Electronics Co.)
13
ENERGY DISTRIBUTION OF IONS BOMBARDING TARGET IMMERSED IN PLASMA
H. Mase, M. Unuma, T. Tanabe and T. Ikeshita (Dep. Electronice Engineering, Ibaraki University)
18
EVALUATION OF FINE PATTERN ETCHNING CHARACTERISTICS WITH SIMULATION
N. Ikegami, T. Matsui, J. Kanamori and K. Sogo (VLSI R&D Center, Oki Electric Lnd. Co.)
24
A NEW SIDE WALL PROTECTION TYPE ANISOTROPIC ETCHING USING A CHOPPING METHOD
K. Tsujimoto, S. Tachi, K. Ninomiya, K. Suzuki, T. Kure, S. Okudaira and S. Nishimatsu (Central Res. Lab., Hitachi)
30
HIGHLY UNIFORM MAGNETRON ETCHING SYSTEM USING AN ANNULAR PERMANENT MAGNET
H. Kinoshita, T. Ishida, and S. Ohno (Res. Lab. Oki Electric Ind. Co.)
36
SILICON TRENCH ETCHING USING 10-3 TORR MAGNETRON DISCHARGE REACTIVE ION ETCHING
M. Sekine, T. Arikado, H. Okano and Y. Horiike (VLSI Res, Center, Toshiba Co.)
42
Al TAPERED ETCHING TECHNOLOGY USING 10-3 TORR MAGNETRON DISCHARGE ION ETCHING
T. Arikado, M, Sekine, H. Okano, Y. Horiike (VLSI Res. Center, Toshiba Co.)
48
MASTERING PROCESS USING DAY ETCHING FOR OPTICAL DISCS
K. Tanii, T. Kashihara, N. Tsuboi and Y. Okino (Disc System Div., Matsushita Electric Ind. Co.)
53
SURFACE STUDIES OF REACTIVE ION ETCH PROCESSES
G. S. Oehrlein (IBM Thomas J. Watson Research Center)
59
HEAVY METAL CONTAMINATION FROM RESISTS DURING PLASMA STRIPPING
S. Fujimura, H. Yano, S. Mochizuki* and K. Ogawa* (Process Development Div., *MOS Process Div., Fugitsu)
67
RECOVERY OF THE DAMAGE ON SILICON SURFACE INDUCED BY RIE BY CHEMICAL DRY ETCHING WITH NF3 GAS
H. Tsukamoto, S. Izumi, S. Yoshikado, T. Ohachi, T. Fujii* and I. Taniguchi (Dep. Electronics, Doshisha University, *Dep. Chemistry, Daikin Ind. Co.)
74
EVALUATION OF REACTIVE ION ETCHING-INDUCED DAMAGE ON GaAs SURFACE
T. Ishikawa, T. Fukada, I. Matsuda, Y. Nakano and K. Tada (Dep. Electronics Engineering, University of Tokyo)
80
PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED BY ECR PLASMA CVD
M. Sawada, D. Inoue and Y. Harada (Research Center, Sanyo Electric Co.)
87
COATING AND CHARACTERISTICS OF PLASMA POLYMERIZED MULTI-LAYER E-BEAM AND X-RAY RESIST
J. Tamano (Dep. Electrical Engineering, Nagoya University)
93
DESIRE:A NEW APPROACH FOR SILICON INCORPORATION IN DRY DEVELOPED RESISTS
B. Roland, R. Lombaerts and F. Coopmans* (UCB N.V.,* IMEC VZW.)
98
DEPENDENCE OF EXPOSURE CHARACTERISTICS OF RESISTS ON SYNCHROTRON RADIATION WAVELENGTH
H. Yamada, T. Sato, S. Ito and S. Hattori (Dep. Electronics Engineering, Nagoya University)
104
DRY DEVELOPEMENT USING AN OLEFINIC POLYMER
N. Abe, K. Fujno and Y. Ban (Advanced Technology Development Div., Fujitsu)
110
UV LASER AND SOFT-VACUUM ELECTRON BEAM PROCESSING OF MICROELECTRONIC FILM
Z. Yu, and G. J. Collins (Dep Electrical Engineering, Colorada State University)
115
PATTERNED ALUMINUM THIN FILM GROWTH VIA PHOTOCHEMICALLY ACTIVATED METALORGANIC CHEMICAL VAPOR DEPOSITION
G. S. Higashi, G. E. Blonder and C. G. Fleming (AT&T Bell Laboratories)
120
EXPERIMENTAL STUDAY ON PHOTOASSISTED EPITAXY OF ZnS FILM USING VACUUM EVAPORATION
H. Yokoyama (Opto-Electronics Research Laboratories, NEC)
126
EXCIMER LASER CVD OF AMORPHOUS SILICON NITRIDE THIN FILMS AND ITS APPLICATION TO In0.53 Ga0.47 As MIS DIODES
H. Aoki, H. Yamazaki and J. Shirafuji (Dep. Electrical Engineering, Osaka University)
132
DOPING OF BORON USING EXCIMER LASER
S. Kato, T. Nagahori, T. Watanabe and S. Matsumoto (Dep. Electrical Engineering, Keio University)
138
EXCIMER LASER-INDUCED CHEMICAL ETCHING OF ALUMINUM
K. Fukuda, T. Inoue, T. Ogura and M. Hirose (Res. Center for Integrated Systems, Hiroshima University)
144
LASER-INDUCED ETCHING OF GaAs in CCl4 and O2 ATMOSPHERE
J. Tokuda, M. Takai, K. Gamo and S. Namba (Faculty of Engineering Science, Osaka University)
148
