Factory Scheduling Using Simulation Models

R. W. Atherton

928

Sensitivity Analysis and Best Compromise Optimization of Furnace Loadsizes in IC Factory Simulation

R. Poulsen and V. Sutcliffe

929

Using Simulation to Plan and Examine a Semiconductor FAB Operation

A. Machida and T. Araki

931

An Automated Assembly System for Various Kinds of VLSI Product

M. Kagino, M. Shindo, H. Nishimura, and J. Oguri

932

Material Control Automation for Integrated Circuit Manufacturing

M. Brain, M. Parikh, A. Bonora, and C. Swamy

934

Standardization of Software for Cells and Blocks in a Hierarchical CAM System for VLSI Manufacturing

E. Herrmann

935

Real Time Automated Shop Floor Control

W. Murakami

936

How to Select and Implement a CIM Strategy

A. Hultquist and G. Leighton

937

A Distributed Architecture for Real-Time Heuristic Factory Control

B. Martensen

938

Robotic Systems Applications in Semiconductor Manufacturing

J. F. Collins, J. W. Buechele, and R. D. Moore

939

Standardization of Cassette Loading/Unloading Stage for LSI Process Equipment

H. Kuroda and H. Harada

940

An Overview of Installed SMIF Facilities

G. Ortiz

942

New Dust Free Wafer Transportation System by "Magnetic Levitation" for Semiconductor Manufacturing

T. Yokoyama, T. Azukizawa, G. Iketani, S. Koguchi, T. Azima, and H. Kawai

943

A Dust-Free Maglev Shuttle Vehicle

M. Ota, J. Oshima, K. Uchiyama, and I. Nanno

945

Magnetically Levitative Transport System in Vacuum for Contamination-Free of Dust Particles

I. Moriyama, J. Yuyama, H. Yamakawa, T. Suzuki, H. Ikeda, and A. Furutani

946

Electrical Characterization of Thin SiO₂ Films Deposited Downstream of a Microwave Discharge

B. Robinson, T. N. Nguyen, and P. D. Hoh

948

Plasma Enhanced Deposition of Al₂O₃

L. J. Olmer and E. R. Lory

950

Modeling of Single-Wafer Sputter Deposition Sources

C. M. Garner

951

Sputter Deposition of Thin Film Contacts on Mercuric Iodide Substrates

A. Y. Cheng

953

Deep Silicon Trench Formation by Reactive Ion Etching

H.-R. Chang, J. W. Kretchmer, G. M. Fanelli, T. P. Chow, R. D. Black, and C. S. Korman

955

Numerical Simulation of a CF₄/O₂ Plasma and Correlation with Spectroscopic and Etch Rate Data

P. Schoenborn, R. Patrick, and H. P. Baltes

957

In Situ Glow Discharge Diagnostics Using FTIR Spectroscopy

D. W. Hess and T. A. Cleland

958

Optimization, Inspection and Control of Plasma Etching Processes Using Nondestructive Thermal Wave Measurements

R. Patrick, W. L. Smith, and M. Salimian

960

The Effect of Pregate Dry Etching on Silicon Gate Oxide Quality

D. Jillie, R. V. Giridhar, G. Wada, and J. Multani

962

Prevention of Interfacial Tunnels in Boron-Doped Silicon Due to CVD Tungsten

J. M. De Blasi, M. Delfino, D. K. Sadana, K. N. Ritz, and M. H. Norcott

963

Selective LPCVD Tungsten for CMOS VLSI Contact Fill Application

C. Y. Yang and J. S. Multani

964

Electrical Breakdown Characteristics of LPCVD Silicon Dioxide

R. Padmanabhan

966

Silicide Formation by Direct Metal Implantation

M. N. Kozicki

968

Determination of the Diffusing Species and Diffusion Mechanism during CoSi, NiSi and PtSi Formation by Using Radioactive Silicon as a Tracer

R. Pretorius, M. A. Wandt, A. P. Botha, C. M. Comrie, and J. McLeod

970

Deformation Mechanisms of Tungsten Polycide Structure

Y. Mashiko, R. Williams, D. Zaterka, T. Okamoto, A. Ohsaki, H. Koyama, and S. Kawazu

972

Low Temperature Nitridation of TiSi₂

R. Mann, R. Baxter, W. Tice, and S. Fridmann

974

Titanium Nitride Films for ULSI Applications Formed by Sputter Deposition from a High Purity Titanium Nitride Target

T. Brat, N. S. Tsai, N. Parikh, C. E. Wickersham, Jr., and A. K. Sinha

976

Enhanced Boron Diffusion Through Thin Silicon Dioxide in Wet Oxygen Atmosphere

Y. Sato, K. Ehara, and K. Saito

978

Transient Enhanced-Diffusion of Ion Implanted B in Si during Rapid Theimal Annealing

M. Miyake, S. Aoyama, and K. Kiuchi

980

Measurement of Two-Dimensional Diffusion Profiles

R. Subrahmanyan, H. Z. Massoud, and R. B. Fair

982

Sodium Penetration Through Plasma-Deposited Silicon Oxynitride

S. V. Dunton, A. C. Ling, and W. G. M. van den Hoek

984

Degradation of Multilayer Thin Film Structures by Diffusional Processes

C. Narayan, S. Purushothaman, E. Castellani, and S. Renick

986

N/N⁺ Epitaxial Silicon Lifetime Dependence on Epitaxial and Substrate Resistivity

W. Dyson and J. Mokovsky

988

200 mm Epitaxial Growth Processing

J. O. Borland, W. C. Benzing, and N. Tate

989

Low Temperature Selective Epitaxy Using SiCl₄ at Reduced Pressure

B. Ginsberg, G. Bronner, and S. Mader

991

Germanium Atomic Layer Epitaxy Using Ge(C₂H₅)₂H₂Gas Surface Chemical Reactions

Y. Takahashi, H. Ishii, and K. Fujinaga

993

Faceted-Wallner Areas in Silicon Fracture

L. D. Dyer

995

High Resistivity Polysilicon as a Supporting and Isolating Substrate for Thin, Cubic β-Silicon Carbide Films

B. Molnar, S. M. Hues, G. Kelner, P. E. R. Nordquist, Jr., and P. G. Siebenmann

997

Passivation of Surface State on Silicon Wafer Surfaces Detected with Thermal Wave Modulated Reflectance

W. L. Smith, T. Miranda, S. Hahn, and M. Arst

998

BF₂⁺ Implant Damage Characterized by Thermal Wave

J. Lee, S. Hanh, W. L. Smith, and M. Arst

1000

Neutralization of Transition Metal Impurity in Silicon by Rapid Thermal Annealing

N. S. Alvi, D. R. Sparks, J. Troxell, and D. L. Kwong

1002

Evaluation of Silicon Surface Cleaning Processes by Contact Resistance Measurements

D. Burkman, T. Hara, S. Kamiyama, J. Mehta, C. Peterson, and D. Syverson

1003

Contact Resistance of Al + 1% Si and Mo/LPCVD W Metallization to n⁺- and p⁺-Doped Si for Power Devices

K. Shenai and B. J. Baliga

1005

Mechanism and Cause of Contact Resistance Formed by Refractory Metal Alloys and N⁺ Silicon

Y. R. Gopalkrishna, P. Chaudhari, and B. K. Furman

1007

Oxygen and Silicon Interstitial Precipitation in Variously Doped Silicon Substrates

X. C. Mu, T. M. Liu, H. P. Dun, and S. Hahn

1008

Segregation Coefficient of Oxygen in Silicon

K. G. Barraclough and R. W. Series

1009

The Effect of Growth Striation on the Oxygen Precipitation in Czochralski-Grown Silicon Wafers

M. Imai, Y. Shiraishi, M. Shibata, H. Noda, and Y. Yatsurugi

1011

The Effects of Phosphorus Doping on Grain Growth in Polycrystal Silicon

C. W. Pearce and V. C. Kannan

1012

Boron Doping Induced Crystal Defect Formation in Power IC Process

M. Chang, G. Gauffreau, S. Fister, and A. Salih

1013

A Manufacturing Process for Integrated Self-Aligned PNP Transistors with High fT

C. T. Tarn, J. Altieri, D. Diddell, T. Moksvold, and C. Snavely

1015

Degradation of MOS Devices Caused by Iron Impurities on the Silicon Wafer Surface

R. Takizawa, T. Nakanishi, and A. Ohsawa

1017

Point Defect/Residual Damage Consideration Following Pre-amorphization of Silicon I. Extended Defects and Gated Diode Leakage

A. C. Ajmera, A. S. M. Salih, G. A. Rozgonyi, R. B. Fair, M. C. Ozturk, and J. J. Wortman

1019

Point Defect/Residual Damage Considerations Following Preamorphization of Silicon II. Boron Diffusion Experiments and Modeling

R. B. Fair, A. Ajmera, and G. Rozgonyi

1021

TEM Investigations on the Sidewall Oxidation of Doped and Undoped Polycrystalline Silicon Films

C. Y. Wong, P. A. McFarland, and Y. Taur

1023

Wet Hydrogen Oxidation in the Presence of Molybdenum and Tungsten for VLSI Applications

R. F. Kwasnick and T. B. Gorczyca

1024

Transient Temperature Distribution and Recrystallization of Substrate in Rapid Thermal Processing

F. K. Yang, S. J. Pien, and R. Kwor

1026

Fundamental Reactions in Silane Discharges

A. Garscadden

1027

Mechanistic Studies of Etching of Silicon by XeF₂

F. A. Houle

1028

Electron Spectroscopy of Si Surface after Ar Ion-Assisted Cl₂ Etching

N. Aoto, E. Ikawa, and Y. Kurogi

1029

Mechanism of Anisotropic Plasma Etching of Tungsten and Silicon

S. Tachi, K. Tsujimoto, S. Okudaira, and T. Kure

1030

Generation and Quenching Mechanisms of SiF₂ in Si Etching by CF₄ + O₂ RF Plasma

M. Kitamura, H. Akiya, and T. Urisu

1032

Highly Selective Etching of Si₃N₄ to SiO₂ Employing F, Cl Atoms Generated by Microwave Discharge

S. Suto, N. Hayasaka, H. Okano, and Y. Horiike

1034

Deep Trench Etching Using CBrF₃ and CBrF₃/Chlorine Gas Mixtures

M. Engelhardt and S. Schwarzl

1036

Submicron Trench Etching Under High Pressure (60 Pa)

H. Uchida, Y. Miyai, and M. Inoue

1038

Highly Anisotropic Trench Etch Process for Silicon-on-Insulator (SOI) Technology Utilizing a Fluorine Chemistry

C. F. Boucher, Jr.

1040

The Effect of Wafer Temperature on Reactive Ion Etching

M. Nakamura, T. Kurimoto, H. Yano, and K. Yanagida

1042

Aluminum Copper Alloy Etching by Rotational Magnetron Enhanced RIE

T. Tsukada, E. Wani, K. Kim, H. Takahashi, and K. Ukai

1044

Equi-Rate High-Speed Reactive Ion Etching of GaAs and AlGaAs, Using Cl₂-H₂

A. Mizuyoshi, T. Shintani, H. Ito, and H. Inaba

1045

Radiation Damage in Dry Etching

S. W. Pang and M. W. Geis

1047

Dry Etching Induced Contamination and Damage Study on Silicon Surfaces

F. K. Moghadam, X. C. Mu, and D. Ranadive

1048

Quantitative Monitoring of Charging-Up Employing EEPROM Device

Y. Yoshida, R. Shirota, and K. Azumi

1049

Study on Ashing Process for Removal of Ion Implanted Resist Layer

J. Konno, S. Fujimura, H. Yano, T. Takada, and K. Inayoshi

1051

Improved Direct Write Electron Beam Resist Process by H⁺ Ion Shower Technology

K. Hashimoto, K. Yamashita, K. Kawakita, and N. Nomura

1053

The Erosion of SOG Mask during the Etching of Tri-Level Resist in Nitrogen Plasma

T. Shibano, M. Yoneda, K. Nishioka, and S. Uoya

1055

Double Layer Resist Process Using Evaporated Fatty Acid

S. Itoh, H. Kato, M. Tawata, Y. Uchida, S. Morita, and S. Hattori

1057

Dry Etching Characteristics of Polysiloxane

H. Namatsu and A. Yoshikawa

1058

The BNC:H Films for X-Ray Mask Membranes

M. Yamada, M. Nakaishi, and K. Nakagawa

1060

Surface Reaction Mechanism of GaAs Epitaxy

J. Nishizawa

1062

Photoexcited Molecular Layer Epitaxy

J. Nishizawa

1063

Laser-Atomic Layer Epitaxy by SL-MOVPE

Y. Aoyagi, A. Doi, S. Iwai, and S. Namba

1064

Radical Beam Epitaxy of Silicon

M. Hirose, S. Miyazaki, and S. Ohkawa

1066

Homoepitaxial Growth of Silicon by Photo-CVD Using VUV Light

N. Gonobe, S. Shimizu, K. Tamagawa, T. Hayashi, and H. Yamakawa

1067

Selective Area Deposition of Dielectrics by Photo CVD

M. Hanabusa, Y. Fukuda, M. Kubo, A. Sugimura, and J. Watanabe

1068

Electric Field-Assisted Photo-CVD of Silicon

H. Itoh, M. Hatanaka, M. Hirayama, and T. Matsukawa

1069

Stoichiometry Control in Laser CVD SiO₂

M. Hirose, T. Tanaka, and H. Nakano

1071

Surface Migration of Active Species in the Photochemical Vapor Deposition

T. Inushima, N. Hirose, K. Urata, T. Sato, and S. Yamazaki

1072

Space Migration of Active Species in the Photochemical Vapor Deposition

N. Hirose, T. Inushima, K. Urata, T. Sato, and S. Yamazaki

1073

Application of Photo-Dissociation Processes to Preparation of In_0.53Ga_0.47As MIS Diodes

J. Shirafuji, S. Miyoshi, and H. Aoka

1074

Laser-Induced Thermochemical Etching of Gallium Arsenide and Silicon Deposition

J. Tokuda, M. Takai, K. Gamo, and S. Namba

1075

Photochemical Cleaning of Silicon Wafers with Halogen Radicals

T. Ito, R. Sugino, T. Yamazaki, S. Watanabe, and Y. Nara

1076

A New Surface Protecting Layer Instead of Native Oxide for Dry Process

E. Ikawa, S. Sugito, and Y. Kurogi

1078

Oxide Films Formed on Dry Etched Si Surfaces

S. Sugito, E. Ikawa, and Y. Kurogi

1079

On the Mechanism of the CO₂ Laser-Induced Surface Reaction of SiO₂ and CDF₃

M. Kawai, Y. Tsuboi, and K. Tanaka

1080

Synchrotron Radiation Enhanced Etching of Phosphorous Doped Polycrystalline Silicon Employing Cl₂ Gas

N. Hayasaka, H. Okano, Y. Horiike, A. Hiraya, and K. Shobatake

1081

Synchrotron Radiation-Excited CVD of Silicon Nitride Films: A Comparison of SiH₄+NH₃ and SiH₄+N₂ Gas Systems

H. Kyuragi and T. Urisu

1083

Materials at Intermediate (Meso-)Length Scales

N. W. Ashcroft

1085

The Synthesis, Characterization, and Optimization of High Temperature Superconducting Oxide Films

J. E. Evetts

1086

Josephson Junction Materials and Technology

H. Hayakawa

1087

Future Directions in Materials for Optical Information Processing

C. Warde

1088

III-V Alloy Semiconductors -- What Has Been Disclosed, and What Has to be Developed?

A. Sasaki

1090

Compound Semiconductor Heterostructures for 21st Century Transistors

L. F. Eastman, W. Schaff, R, Shealy, and G. Wicks

1091

Artificially Structured Materials - Promise and Realization

D. J. Robbins

1092

Advances in Materials and Device Technologies for Optical Transmission Systems

D. R. Smith

1093

RHEED Oscillation and Related Phenomena Application to Precise Control of Crystal Growth

T. Sakamoto

1094

Characterization of Electronic Materials by Synchrotron X-Ray Diffraction

J. Matsui

1095