Modeling and Simulation of High Density Plasmas
David B. Graves, Hanming Wu, and Robert K. Porteous (University of California Berkeley)
1
Wave Propagation and Plasma Uniformity in an ECR Plasma Etch Reactor
J. L. Cecchi and J. E. Stevens (Princeton University)
9
Highly Uniform Magnetic Field Design and Microwave Propagation Study in ECR Etching System by Numerical Simulation
T. Ishida, S. Samukawa*, T. Nakamura, H. Abe**, Y. Kawase and A. Ishitani*** (FA Development Division, NEC Corporation, *Microelectronics Research Laboratories, **C&C Information Technology Laboratories, ***ULSI Development Laboratories)
17
Al Etching Characteristics Employing Helicon Wave Plasma
N. Jiwari, H. Iwasawa, A. Nara, H. Sakaue, H. Sindo*, T. Shoji** and Y. Horiike (Hiroshima University, *Fukuyama University, **Nagoya University)
23
A Comparison of Cl2 and HBr/Cl2-Based Polysilicon Etch Chemistries: Impact on SiO2 and Si Substrate Damage
John F. Rembetski, Y. D. Chan, E. Boden, Tieer Gu*, O. O. Awadelkarim*, R. A. Ditizio*, S. J. Fonash*, Xiaoyu Li**, C. R. Viswanathan** (SEMATEC, *Pennsylvania State University, **University of Colifornia at Los Angeles)
27
Electric Evaluation of Radiation Damage in SiO2 due to RIE
A. Tsukamoto, K. Mizushima, Y. Hidaka, H. Okada, S. Terakawa (Matsushita Erectronics Corporation)
33
Investigation of ECR plasma and its Silicon Etching at LN2 Temperature in SF6
S. K. Kim, C. W. Park, J. K. Kwak*, J. K. Lee*, S. Cho**, E. H. Choi***, C. Rhee (Korea Research Institute of Standards and Sciences (KRISS) , *Seoul National University, **Kyung-Gi University, ***Kwangwoon University)
39
Etching System Using Electron Beam Excited Plasma (EBEP)
T. Hara, M. Hamagaki, M. Ryoji*, K. Ohnishi* and Y. Aoyagi (The Institute of Physical and Chemical Research (RIKEN), *Akashi Technical Institute Kawasaki Heavy Industries, Ltd.)
43
High-Gas-Flow Rate Microwave Plasma Etching
K. Tsujimoto, T. Kumihashi, N. Kofuji and S. Tachi (Central Research Laboratory, Hitachi, Ltd.)
49
Removal of the Residue After Low Temperature Etching
T. Mitsuhashi, A. Yanagisawa and J. Kanamori (VLSI R & D Center Electronic Devices Group, Oki Electric Industry Co., Ltd.)
55
Al-Cu Alloy Etching Using Alminum Chloride Source
M. Sato and Y. Arita (NTT LSI Laboratories)
59
Effects of H2O on the Generation of H Radicals in Hydrogen Plasma
J. Kikuchi, M. Suzuki, H. Yano and S. Fujimura (Fujitsu Ltd.)
65
Resist and Sidewall Film Removal after AlRIE Employing F+ H2O Downstream Ashing
S. Jimbo, K. Shimomura, T. Ohiwa, M. Sekine, H. Mori*, K. Horioka and H. Okano (ULSI Research Center Toshiba Corp., *Semiconductor Group, Toshiba Corp.)
69
High ashing rate of Ion Implanted Resist Layer
K. Shinagawa, M. Kobayashi, S. Fujimura, M. Nakamura (Basic Process Development Div, Fujitsu Ltd.)
75
Ion Beam Assisted Etching in Cl2/GaAs/Ga+ System
T. Kosugi, H. Iwase and K. Gamo (Faculty of Engineering Science, Osaka University)
81
Photodissociation of Trimethylindium and Trimethylgallium on GaAs at 193 nm Studied by Angle-resolved Photoelectron Spectroscopy
S. Shogen, M. Ohashi, S. Hashimoto, Y. Matsumi and M. Kawasaki (Institute of Electronic Science, Hokkaido University)
87
Thin Film Deposition by Low Energy SiCln+ Beam
T. Sakai, A. Sakai and H. Okano (ULSI Research Center, Toshiba Corp.)
93
Chemical States of Bromine Atoms on SiO2 Surface After HBr RIE: Analysys of Thin oxide
K. Koshino, J. Matuo* and M. Nakamura (Basic Process Development Div., Fujitsu Ltd., *Fujitsu Laboratories Ltd.)
99
The Study on Clean and Adsorbed Surface of Si(111)7X7-by Second Harmonic Generation (SHG)
K. Nakamura, H. Yamamoto*, K. Domen*, H. Shimizu and C. Hirose* (Electrotechnical Laboratory, *Tokyo Institute of Technology)
105
The Fluorine Termination of Silicon Surface by F2 Treatment and Variation of the Surface Structure in Water
M. Nakamura, T. Takahagi and A. Ishitani (Toray Research Center, Inc.)
111
Photo-stimulated Ion Desorption from Silicon Surfaces by Synchrotron Radiation
S. Yamamoto, T. Ogawa, I. Ochiai and K. Mochiji (Central Research Laboratory, Hitachi Ltd.)
117
A Phenomenological Study of Particulates in Plasma Tools and Processing
Gary S. Selwyn (IBM)
123
Particulate Generation and Behavior in Silane Plasmas
Y. Watanabe and M. Shiratani (Kyushu University)
131
Photoluminescence and Its Excimer Laser Radiation in Photo-Assisted Chemical VAPOR Deposition SiO2 Film
T. Kanashima, M. Okuyama and Y. Hamakawa (Faculty of Engineering Science, Osaka University)
139
Selective Deposition of Silicon by Mercury Sensitized Photochemical Vapor Deposition
M. Hiramatsu, A. Ishida, T. Kamimura and Y. Kawakyu (Research and Development Center, Toshiba Corp.)
145
Relative Importance of Adsorption and Photolysis in Nucleation and Growth of Al Photodeposition
T. Kawai and M. Hanabusa (Department of Electrical and Electronic Engineering, Toyohashi University of Technology)
151
High Rate Deposition of SiO2 Membrane by Excimer Laser Enhanced Projection CVD from Organic Compounds at Law Temperature
S. Tomoura, K. Takashima*, K. Minami**, M. Esashi**, J. Nishizawa*** (Asahi Chemical Industry Co., Ltd. Engineering Administration, *Ishikawajima-Harima Heavy Industries Co., Ltd., **Department of Mechatronics and Treciesion Engineering, Tohoku University, ***Semiconductor Research Foundation Semiconductor Research Institute)
157
Synchronously Excited Digital Chemical-Vapor Deposition: Its Appriance on Investigation into Elementary Processes Occuring in Photo-Assisted LPCVD of Tantalum Pentoxide
S. Tanimoto, N. Shibata, K. Kuroiwa and Y. Tarui (Tokyo University of Agrioulture and Technology)
163
TiN Thin Film Prepared by CVD Method Using Cp2Ti(N3)2
K. Ikeda, M. Maeda and Y. Arita (NTT LSI Laboratories)
169
Formation of Single Crystal Al Interconncetions by in Situ Annealing
J. Wada, K. Suguro, N. Hayasaka and H. Okano (ULSI Research Center, Toshiba Corp.)
175
High-Fluidity Deposition of Si by Plasma Enhanced CVD of Si2H6
H. Shhin, M. Hashimoto*, K. Okamoto, S. Miyazaki and M. Hirose (Department of Electrical Engineering, Hiroshima University, *New Japan Radio)
181
Radical Kinetics in a Fluorocarbon Etching Plasma
H. Sugai and Y. Hikosaka (Nagoya University)
187
Structural Effects on Etching Rate in Reactive Ion Etching
M. Ardehali and H. Matsumoto (Microelectronics Research Laboratories, NEC Corp.)
193
Estimation of Ion Incident Angle from Si Etching Profiles
Y. Gotoh, T. Kure and S. Tachi (Central Research Laboratory, Hitachi Ltd.)
199
Pattern Size Dependence of SiO2 Etching Characteristics When Using CF4 + H2 Plasma
H. Hayashi, T. Ohiwa, H. Tamura, M. Matsushita*, I. Hasegawa*, K. Horioka and H. Okano (ULSI Research Center, *Semiconductor Group, Toshiba Corporation.)
205
Plasma Transport Effect on ECR Plasma Etching
N. Fujiwara, T. Maruyama, M. Yoneda, K. Nakamoto and K. Tsukamoto (LSI Laboratory, Mitsubishi Electric Corp.)
211
