Comparison of the Ion Velocity Distribution in Different High Density Reactors (ECR, Helicon, DECR, ······)
N. Sadeghi (Universite Joseph Fourier de Grenoble)
1
Real-Time Feedback Control of 2-Dimensional Parameters in Etching Plasmas
P. L. G. Ventzek, N. Yamada, K. Kitamori*, Y. Sakai and H. Tagashira (Hokkaido University, *Hokkaido Institute of Technology)
3
Observation of Waves and Optical Emissions in a Helicon Plasma
K. Nakamura, K. Suzuki and H. Sugai (Fuculty of Engineering, Nagoya University)
9
Control of Ion Energy for Low-Damage Plasma Processing in RF Discharge
N. Y. Sato, H. Kobayashi, T. Tanabe, T. Ikehata and H. Mase (Department of Electrical and Electronic Engineering, Ibaraki University)
15
Anisotropic Etching of n+doped Polysilicone Using Beam Plasmas Generated by Gas Puff Plasma Sources
T. Oomori, M. Taki, K. Nishikawa, H. Ootera and K. Ono (Semiconductor Research Laboratory, Mitsubishi Electric Corp.)
21
Characterization of Inductive Coupled Plasma
M. Sato, N. Takenaka, A. Ishihama and K. Sakiyama (VLSI Development Laboratories, SHARP Corp.)
27
Profile Control of Poly-Si Etching in ECR Plasma
N. Fujiwara, T. Maruyama and M. Yoneda (ULSI Laboratory, Mitsubishi Electric Corp.)
31
The Electron Charging Effects of Plasma on Notch Profile Defects
T. Nozawa, T. Kinoshita, T. Nishizuka, A. Narai, T. Inoue and A. Nakaue (Electronics Research Laboratory, Kobe Steel, Ltd.)
37
Gate Electrode Etching Using a Transformer Coupled Plasma
K. Yoshida, H. Miyamoto and E. Ikawa (ULSI Device Development Laboratories, NEC Corp.)
43
Aspect Ratio Independent Etching : Fact or Fantasy
A. D. Bailey III and R. A. Gottscho (AT & T Bell Laboratories)
49
Simulation of Microloading Effect Caused by Reactants Transport and Products Incidence
M. Izawa, T. Kumihashi and Y. Ohji (Central Research Laboratory, Hitachi, Ltd.)
55
Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
T. Sato, N. Fujiwara and M. Yoneda (ULSI Laboratory, Mitsubishi Electric Corp.)
61
Effect of N2 Addition on Aluminum Alloy Etching Using ECR-RIE and MERIE
Y. Kusumi, N. Fujiwara, T. Sato, T. Yokoi, J. Matsumoto and M. Yoneda (ULSI Laboratory, Mitsubishi Electric Corp.)
67
Effect of Cl2 Addition to O2 Plasma on RuO2 Etching
K. Tokashiki, K. Sato, K. Takemura*, S. Yamamichi*, Pierre-Yves Lesaicherre, H. Miyamoto, E. Ikawa and Y. Miyasaka* (ULSI Devrice Development Laboratories, *Fundamental Research Laboratories, NEC Corp.)
73
Tungsten Etching Using Electron Cyclotron Resonance Plasma
T. Maruyama, N. Fujiwara, K. Shiozawa and M. Yoneda (ULSI Laboratory, Mitsubishi Electric Corp.)
79
Silicon Etching by Kinetic-Energy-Enhanced Chlorine
Stephen R. Leone, Ffamcis X. Campos and Gabriela C. Weaver (Joint Institute for Laboratory Astrophysics, National Institute of Standards and Technology and University of Colorado, Boulder, Colorado)
85
Si (100) Etching by Cl Atomic Beams \ Comparison with Translational-Energy-Induced Etching \
Y. Teraoka and I. Nishiyama (Microelectronics Research Laboratories, NEC Corp.)
93
Study on Etching Reactions with Hyperthermal Chlorine Beams
K. Karahashi, J. Matsuo* and K. Horiuchi (Fujitsu Laboratories Ltd., *Kyoto University)
99
In-situ Monitoring of Product Species in ECR Plasma Etching by Fourier Transform Infrared Absorption Spectroscory
K. Nishikawa, K. Ono, M. Tuda, T. Oomori and K. Namba (Semiconductor Research Laboratory, Mitsubishi Electric Corp.)
105
LITD Study of Fluorine Adsorbed Silicon Surfaces
K. Karahashi, K. Otsuka*, J. Matsuo**, M. Nakamura*, K. Horiuchi and H. H. Sawin*** (Fujitsu Laboratories Ltd., *Fujitsu Ltd., **Kyoto University, ***Massachusetts Institute of Technology)
111
Mechanisms of the Deposition of Hydrogenated Carbon Films
W. Moller, W. Fukarek, A. V. Keudell*, K. Lange* (Forschungszentrum Rossendorf, *Max-Planck-Institut fur Plasmaphysik)
117
CVD of Films from Remote Excitation High Density Plasma Sources
Arthur Sherman (Sherman & Associates, Inc.)
125
Formation Mechanism of F-added SiO2 Films Using Plasma CVD
H. Miyajima, R. Katsumata, N. Hayasaka and H. Okano (ULSI Research Laboratories, R&D Center, Toshiba Corp.)
133
Characteristics of Silicon Dioxide Film Prepared by Alcohol Added TEOS/O3 APCVD
K. Ikeda, S. Nakayama and M. Maeda (NTT LSI Laboratories)
139
Real-Time Monitoring of Silicon Nitride Composition During Plasma Enhanced Chemical Vapor Deposition
A. D. Bailey III and R. A. Gottscho (AT&T Bell Laboratories)
145
In Situ Observation of Surface Reactions during Plasma Enhanced CVD Using FT-IR-ATR
Y. Miyoshi, S. George*, L. Okada*, S. Miyazaki and M. Hirose (Department of Electrical Engineering, Hiroshima University, Department of Chemistry and Biochemisty, University of Colorado)
151
Studies on Reaction Processes of Hydrogen and Oxygen Redicals on H2O-Adsorbed Si (100) Surfaces by HREELS
H. Ikeda, K. Hotta, T. Yamada, S. Zaima and Y. Yasuda (School of Engineering, Nagoya Univesity)
157
Growth of Nanometer Thick a-Si : H Films on Atomically Flat, Hydrogen-Terminated Si (111) Surfaces and Their Surface Morphologies Studied by AFM
H. Deki, M. Fukuda, S. Miyazaki and M. Hirose (Department of Electrical Engineering, Hiroshima University)
163
Plasma Damage Measurement on Si Wafer by Electrodeless CV
H. Enami, T. Kure*, S. Kanai** and M. Nawata*** (Device Development Center, *Central Research Laboratory, **SaKado Works, ***Mechanical Engineerring Research Laboratory, Hitachi, Ltd.)
169
Dry Post-Etch Treatment Using SF6 Chemistry for 0.2μm Contact Hole
Seung-Joon Kim, Kisoo Shin, Haesung Park and Soo-Han Choi (Hyundai Electronics Co., Semiconductor R&D Laboratory)
175
Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-ray Photoelectron and Desorption Spectroscopies
N. Hirashita, Y. Miyakawa, K. Fujita and J. Kanamori (VLSI Research and Development Center, Oki Electric Industry Co., Ltd.)
181
Analysis on Plasma Chemical Reactions in Dry Etching of Silicon Dioxide
H. Kazumi and K. Tago (Energy Research Laboratory, Hitachi, Ltd.)
187
Systematical Measurements of CFx (X=1--3) Radicals in ECR Etching Plasmas
K. Miyata, K. Takahashi, S. Kishimoto, M. Hori and T. Goto (School of Engneering, Nagoya University)
193
Inductively Coupled Plasma Etching in Pulsed Mode
Y. Hikosaka* **, M. Nakamura*, K. Nakamura*, M. Nakamura** and H. Sugai* (*Department of Electrical Engineering, Nagoya University, **Process Development Division, Fujitsu Ltd.)
199
Measurement of Fluorocarbon Radicals Generated from C4F8/H2 Inductively Coupled Plasma : Study on SiO2 Selective Etching Kinentics
K. Kubota, H. Matsumoto*, H. Shindo**, S. Shingubara and Y. Horiike* (Department of Electrical Engineering, Hiroshima University, *Department of Electrical Engineering, Toyo University, **Faculty Faculty of Engineering, Fukuyama University)
205
Analysis of Polymer Formation during SiO2 Microwave Plasma Etching
Y. Gotoh and T. Kure (Central Research Laboratory, Hitachi, Ltd.)
211
Measurement of Energy Distribution of Ion Species through a High-aspect-ratio Hole in a C4F8 Plasma
K. Kurihara, M. Sekine, K. Horioka and H. Okano (ULSI Resarch Laboratories, Research and Development Center, Toshiba Corp.)
217
Polymer Deposition Control in SiO2 Etching by Substrate Temperature Manipulation
S. Arai, N. Kofuji, K. Tsugimoto and T. Mizutani (Central Research Laboratory, Hitachi, Ltd.)
223
Highly Selective Contact Hole Etching Using ECR Plasma
H. Kimura, K. Shiozawa, K. Kawai, H. Miyatake and M. Yoneda (ULSI, Laboratory, Mitsubishi Electric Corp.)
229
Surface-Ware-Coupled-Plasma for Anisotropic Etching
H. Mabuchi, K. Katayama*, K. Iio*, K. Komachi*, T. Ebata, T. Akimoto** and E. Ikawa** (Research & Development Division, *Semiconductor Equipment Division, Sumitomo Metal Industries Ltd., **ULSI Device Development Laboratories, NEC Corp.)
235
Analysis of Mechanisms of Highly Selective Oxide Etching
H. Enomoto and T. Tokunaga (Device Development Center, Hitachi, Ltd.)
241
Selective Oxide Etching to Silicon Nitride
K. Harashima, T. Akimoto and E. Ikawa (ULSI Device Developmet Laboratories, NEC Corp.)
247
