November 5-6, 1996

A Synthetic Approach To RF Plasma Modclling Verified by Experiments

Evangelos Gogolides (Institute of Microelectronics, NCSR Demokritos)


Time Resolved Measurements of Pulsed Discharges

Lawrence J. Overzet, Brian A. Smith, Jennifer Kleber and Sivananda K. Kanakasabapathy (University of Texas at Dallas)


Energy Distributions and Etch Capability of Negative Ions in a Pulsed Chlorine ICP

T. H. Ahn*,**, M. Itoh*, Y. S. Ra**, K. Nakamura* and H. Sugai* (*Department of Electrical Engineering, Nagoya University ; **Semiconductor R&D Center, Samsung Electronics Co., Ltd.)


The Effect of Magnetic Field in Pulse-Time Modulated Plasma

H. Ohtake and S. Samukawa (Microelectronics Research Laboratories, NEC Corp.)


Characteristics of Stabilized Pulsed Plasma via Suppression of Side Band Modes

J. H. Hahm, K. K. Chi, H. S. Shin, C. O. Jung, Y. B. Koh and M. Y. Lee (Semiconductor R&D Center, Samsung Electronics Co., Ltd.)


Simulation of Topography Dependent Charging with Pulse Modulated Plasma

T. Kinoshita, T. Nozawa, M. Mane* and J. P. McVittie** (Electronics Research Laboratory, KOBE STEEL, Ltd. ; *Microelectronics Research Laboratories, NEC Corp. ; **Center for Integrated Systems, Stanford Unversity)


The Influence of rf bias on Electron Shading Damage

A. Hasegawa, Y. Hikosaka, K. Hashimoto and M. Nakamura (Process Devclopment Division, Fujitsu Ltd.)


Evalution of Electron Shading Charge-up Damage with MNOS Capacitor

S. Sakamori, T.Maruyama, N. Fujiwara, H. Miyatake, M. Yoneda (ULSI Laboratory, Mitsubishi Electric Corp.)


Effect of RIE-Lag of WSi2 on Etched Profile with Pulsed ECR Plasma

N. Fujiwara, T. Maruyama, S. Ogino and M. Yoneda (ULSI Laboratory, Mitsubishi Electric Corp.)


Etching of Ti-polycide Gate Using Cl2/O2 Chemistry in a Low Electron Temperature High Density Plasma

H. S. Shin, K. K. Chi, C. O. Jung, Y. B. Koh and M. Y. Lee (Semiconductor R&D, Samsung Electronics Co., Ltd.)


Reduction of Charge up with High Power Pulsed ECR Plasma

T. Maruyama, N. Fujiwara, S. Ogino and M. Yoneda (ULSI Laboratory, Mitsubishi Electric Corp.)


Precise Evaluation of Pattern Distortion with Variety of Impurity and Conductivity

S. Ogino, N. Fujiwara, T. Maruyama and M. Yoneda (ULSI Laboratory, Mitsubishi Electric Corp.)


WSi2/Polysilicon Gate Etching Using TiN Hard Mask in Conjunction with Photoresist

S. Tabara (Process Development Department. YAMAHA Corp.)


Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of CVD SiOF Films

Y. Nakasaki*, H. Miyajima, R. Katsumata* and N. Hayasaka (Microelectronics Engineering Lab., *R&D Center, Toshiba Corp.)


Film Property Analysis for SiOF Film Deposited by ECR-CVD Method

A. Ohtake, K. Kobayashi, K. Tago, K. Kato* and T. Fukuda* (Hitachi Research Lab., *Semiconductor & IC Division, Hitachi Ltd.)


Analysis of Deposit Profiles for SiO2 Gap Fill Process by Using Bias-ECR-CVD Systems

K. Kobayashi, H. Ietomi*, K. Kato*, M. Asaoka** (Hitachi Research Lab., *Semiconductor & IC Division, **Instrumental Division, Hitachi Ltd.)


The Study of Surface Chemistry on Semiconductors Using Molecular Beam Reactive Scattering

Ming L. Yu (Department of Physics The Hong Kong University of Science and Thechnology)


Characterization of F2 Treatment Effects on Si (100)/SiO2 Interface

T. Kanashima, Y. Kurioka, T. Imai, H. Yamamoto and M, Okuyama (Department of Electrical Engineering, Osaka University)


A Mass Spectrometric Study of Reaction Mechanisms in Chemical Vapor Deposition of (Ba, Sr) TiO3 Films

M. Yamamuka, T. Kawahara, T. Horikawa and K. Ono (Advanced Technology R&D Center, Mitsubishi Electric Corp.)


Oscillating Chemical Instabilities in Contact Etching Diagnosed by Optical Emission

S. C. McNevin (Bell Laboratorics, Lucent Technologies)


Mechanism in High-density Fluorocarbon Plasma Etching of Si, SiO2 and Si3N4

K. Miyata, H. Arai, T. Kuno, M. Hori, and T. Goto (Dept. of Quantum E gineering, School of Engineering, Nagoya University)


Mechanism of Highly Selective SiO2 to Si3N4 Ctching Using C4F8+CO Plasma

H. Hayashi and M. Sekine (Microelectronics Engineering Lab, Toshiba Corporation)


Highly Selective SiO2 Etching Using CF4/C2H4

H. Sakaue, A. Kojima, N. Osada, S. Shingubara and T. Takahagi (Department. of Electrical Engineering, Hiroshima Univ.)


Characteristics of Very High-Aspect-Ratio Contact Hole Etching

N. Ikegami, A. Yabata, T. Matsui, J. Kanamori and Y. Horiike* (VLSI R&D Center, Electronic Device Group Oki Electric Industry Co., Ltd, *Department of Electrical & Electronics Engineering, Toyo University)


High Selectivity Plasma Etching of Silicon Dioxide with a 27/ 2 MHz Capacitive Rf Discharge

W. Tsai G. Mueller, R. Lindquist, H. Zhu, T. Nguyen and B. Frazier, V. Vahedi* I. Harvey** and C. Gabriel** (Lam Research Corporation, *Lawrence Livermore National Laboratory, **VLSI Technology Inc.)


High-aspect-ratio Contact Hole Etching Technology Using Inductively Coupled Plasma

S. Imai, N. Jiwari, and H. Nikoh (Kyoto Research Laboratory, Matsushita Electronics Corp.)


SiO2 Etching Characteristics Using UHF Plasma Source

H. Nogami, E. Wani, K. Mashimo, S. Samukawa*, T. Tsukada (Research and Development Division Anelva Corporation, *NEC Microelectronics Laboratories)


Plasma Characteristics of Planar Type NLD and its Application to SiO2 Etching

Y. Chinzei, M. Ogata, T. Sunada*, T. Hayashi*, H. Shindo**, R. Itatani***, T. Ichiki and Y. Horiike (Department of Electrical & Electronics Engineering, Toyo University, *Research and Development Division, ULVAC Japan, Ltd., **Department of Applied Physics, Tokai University, * * *Niihama National College of Technology)


STM Observations and Analysis of Thermal Etehing of Si (100) with Br and Cl

C. M. Aldao, J. H. Weaver* (Institute of Materials Science and Technology (INTEMA) Universidad Nacional de Mar del Plata-CONICET, *Department of Materials Science and Chemical Engineering, University of Minnesota)


Mechanisms for Microscopic Nonuniformity in Low-Pressure, High-Density Plasma Etching of Poly-Si in Cl2 and Cl2/O2 Mixtures

M. Tuda and K. Ono (Advanced Technology R&D Center, Mitsubishi Electric Corporation)


Kinetics of Etch Products and Reaction Process in Electron Cyclotron Resonance Plasma Etching of Si

K. Nishikawa, T. Oomori and K. Ono (Advanced Technology R&D Center, Mitsubishi Electric Corporation)


The Mechanism of Microloading Effect in Tungsten Etchback Using The SF6 Helicon Plasma

Y. S. Seol, C. J. Choi, 0. S. Kwon, K. H. Baik (Advanced Process Dept. 1, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.)


Mechanism for AlCu Film Corrosion

K. Siozawa, N. Fujiwara and M. Yoneda (ULSI Lab, Mitsubishi Electric Corp.)


Relation between Al Corrosion and Residual Halogen \ Comparison of O2+H2O and O2+H2O+CF4 Ashing \

K. Otsuka, H. Kojiri*, M. Aoyama*, K. Nagase, D. Matsunaga, and M. Nakamura (Process Development, *VLSI Laboratory, Fujitsu VLSI Limited)


In Situ Micro-Arc Monitor and Analysis of its Generation

K. Tomioka, M. Sekine and I. Sakai (Microelectronics Engineering Laboratory, Toshiba Corporation)


Effect of Additive Gases on Profile and Dimension Control during a Cl2-based Polysilicon Gate Etching

H. S. Lee, B. J. Jun, D. D. Lee, K. H. Baik (Memory R&D Division, Hyundai Electronics Industries Co., Ltd.)


Decoupled Plasma Source Technology ; Process Region Choices for Silicide Etching

S. Pan, S. Xu, D. Podlesnik (Applied Materials Inc.)