November 12-14, 1997

The Role of Electron Tunneling in Pattern-Dependent Charging

Gyeong S. Hwang and Konstantinos P. Giapis (Division of Chemistry and Chemical Engineering, California Institute of Technology)

1

Influence of Pulsed ECR Plasma on Gate Electrode Etching

Nobuo Fujiwara, Takahiro Maruyama and Hiroshi Miyatake (ULSI Laboratory, Mitsubishi Electric Corp.)

9

The rf bias Effect on Electron Shading Damage and the Measurement of Damage Current

Akihiro Hasegawa, Fumihiko Shimpuku, Koichi Hashimoto and Moritaka Nakamura (Development Division, Fujitsu Ltd.)

15

Reduction of Charge Build-up with Pulse-Modulated Bias in Pulsed ECR Plasma

Takahiro Maruyama, Nobuo Fujiwara, Satoshi Ogino and Hiroshi Miyatake (ULSI Laboratory, Mitsubishi Electric Corp.)

21

Effects of Pulse-Time Modulated Plasma for Precise Metal Etching

Hiroto Otake, Seiji Samukawa, Hirokazu Oikawa* and Yasunobu Mashimoto (Silicon Systems Research Laboratories, *ULSI Device Development Laboratories, NEC Corp.)

27

Correlation between Etching Characteristics of Titanium Silicide and its Crystal Structure under Cl2 or HBr Plasma Etching

Eiichi Soda, Ken Tokashiki and Hidenobu Miyamoto (ULSI Device Development Laboratories, NEC Corp.)

33

WSi2/Poly-Si Gate Etching Using a TiON Hard Mask

Suguru Tabara, Satoshi Hibino and Hiroshi Nakaya (Semiconductor Division, YAMAHA Corp.)

39

Control of CD Shift in Metal Etching

Masaru Izawa, Shin-ichi Tachi, Ryoji Hamazaki*, Tsuyoshi Yoshida** and Masayuki Kojima*** (Central Research Laboratory, *Kasado Works, Hitachi Ltd., **Hitachi Techno-engineering, ***Semiconductor & Integrated Circuits Div., Hitachi Ltd.)

45

Etching Characteristics of 0.1-μm-Level Patterns by Gaspuff Plasma Source

Hiroki Ootera, Masakazu Taki, Kenji Shintani, Kazuyasu Nishikawa and Tatsuo Oomori (Advanced Technology R&D Center, Mitsubishi Electric Corp.)

51

Electrical and Optical Diagnostics of Pulsed rf Magnetron Discharges in BCl3/Cl2 Mixtures for Aluminum Etching

Mutsumi Tuda, Kouichi Ono, Masaaki Tsuchihashi*, Minoru Hanazaki* and Toshio Komemura* (Advanced Technology R&D Center, *ManufacturingTechnologyDivision, Mitsubishi Electric Corp.)

57

Flow in Radicals, Etch Products, and Source Gas in Plasma Reactors

Kenichi Nanbu and Masaharu Suetani (Institute of Fluid Science, Tohoku University)

63

Simulation of Topography Dependent Charging with Deep Afterglow Pulse Modulated Plasma

Takashi Kinoshita and J. P. McVittie* (Electronics & Information Technology Lab., KOBE STEEL, Ltd., *Center for Integrated Systems, Stanford University)

71

Effect of Pulsed Plasma in Reactive Ion Etcher

Mari Shibata, Jun Matsui*, Nobuhiko Nakano*, Toshiaki Makabe* and Moritaka Nakakura (Device Development Division, Fujitsu Ltd., *Department of Electrical Engineering, Keio University)

77

Doubled-near-surface Model for Oxide Plasma Etching

Shinichi Tachi, Masaru Izawa, *Masayuki Kojima (Central Research Laboratory, *Semiconductor & IC Div., Hitachi Ltd.)

83

A Theoretical Analysis of the Deposition Processes in Ti Plasma-enhanced CVD

Ken-ichiro Tsuda, Koji Watanabe*, Yoshio Ohshita* and Toshikazu Takada (Fundamental Research Labs., *Silicon Systems Research Labs., NEC Corp.)

91

Monitoring of Electron Energy Distribution Change from Optical Emission for Non-Magnetic Ultra-High-Frequency Plasma

Keizo Kinoshita, Syuichi Noda, Mitsuru Okigawa, Yoshinobu Hikosaka, Naoshi Itabashi, Seiji Samukawa* and Masami Inoue (Plasma Technology Lab., Association of Super-Advanced Electronics Technologies, *Silicon System Research Laboratories, NEC Corp.)

97

Production and Control of Low-Pressure CF4 Plasma Using Surface Waves

Masaaki Nagatsu, I. Ghanashev, Shin Morita and Hideo Sugai (Department of Electrical Engineering, Nagoya University)

103

Analysis of Plasma Density Modulation in Transformer Coupled Plasma (TCP) Due to RF Bias Plasma: Experiments and Modeling

A. R. Ellingboe, J. W. Shon* and P. Vitello** (Applied-Komatsu Technology, *Institute for Laser Science and Applications, *Lawrence Livemore National Laboratory)

109

(RF+Pulse) Biasing Gate Etching Technique

Naoyuki Kofuji, Masahito Mori, Masaru Izawa, Kazunori Tsujimoto and Shin-ichi Tachi (Central Research Laboratory, Hitachi Ltd.)

113

[Paper is not received]

119

Effect of Electron Shading on Gate Oxide Degradation

Shigenori Sakamori, Takahiro Maruyama, Nobuo Fujiwara and Hiroshi Miyatake (ULSI Laboratory, Mitsubishi Electric Corp.)

121

Characterization of Insitu Plasma Clean Process Through Optical Emission Spectroscopy

Meihua Shen and Yosi Melaku (Lam Research Corp.)

127

Control of ExB Drift in an MERIE Dielectric Etcher

C. H. Bjorkman, R. Lindley, H. Shan, M. Welch, S. Ma*, J. P McVittie*, J. K. Lowell, L. Jastrzebski** and A. Findlay** (Applied Materials Inc., *Stanford University, Electrical Engineering, **Semiconductor Diagnostics Inc.)

133

Development of Resist Removing Technology with the Use of Adhesive Tape

Eiji Toyoda, Makoto Namikawa, Seiichiro Shirai*, Satoshi Sakai* and Yasunobu Yanagisawa* (Semiconductor Related Material Div., Nitto Denko Corp., *Device Development Center, Hitachi Ltd.)

139

Etching Mechanism of Contact Hole with High Aspect Ratio: Consideration of Transports of Ion and Neutrals in a Hole

Kazuyasu Nishikawa, Shingo Tomohisa, Hiroki Ootera and Tatsuo Omori (Advanced Technology R&D Center, Mitsubishi Electric Corp.)

145

Mechanism of Etch Stop in High Aspect Ratio Contact Holes

Akihiro Kojima, Tokuhisa Ohiwa Makoto Sekine, Itsuko Sakai, Shigeru Yonemoto* and Yumi Watanabe (Microelectronics Engineering Labs., Semiconductor Group, Toshiba Corp.)

151

Analysis of Relationship between Etching Selectivity and Linearity at SiO2/Si3N4 Dry Etching

Hiroyuki Enomoto, Kazutami Tago*, Naofimi Ohashi and Takafumi Tokunaga (Device Development Center, *Hitachi Research Laboratory, Hitachi Ltd.)

157

Highly Selective SiO2 Etching with an Inductively Coupled Plasma Source Using a Multispiral Coil

Michinari Yamanaka, Shigenori Hayashi, Masafumi Kubota and *Hideo Nakagawa (ULSI Process Technology Development Center, Matsushita Electronics Corp., *Association of Super-Advanced Electronics Technologies)

163

Polymer Control with CH2F2 Addition for Self-Aligned-Contact (SAC) Etching into Narrow Slit

Wataru Futo, Kenji Fukuda, Koichi Hashimoto and Kiyoshi Watanabe (Advanced Process Integration Department, Fujitsu Ltd.)

169

Radical Interactions with Wafer Surfaces in SiO2 Etching Plasma

Satoshi Morishita, Keizo Kinoshita, Tetsuya Tatsumi, Hisataka Hayashi, Yoshinobu Hikosaka and Masami Inoue (Plasma Technology Lab., Association of Super-Advanced Electronics Technologies)

175

In-situ after Treatment using Low-Energy Dry-Etching with a CF4/O2 Gas Mixture to Remove RIE Damage

Miyako Matsui, Fumihiko Uchida, Masayuki Kojima*, Tokufumi Tokunaga**, Kazuo Yamazaki*, Kiyomi Katsuyama** and Hiromasa Arai* (Central Research Lab., *Semiconductor and IC Div., **Device Development Center, Hitachi Ltd.)

181

Enhancement of Mask Selectivity in SiO2 Etching with a Phase-Controlled Pulsed Inductively Coupled Plasma

Kyoung Sub Shin, Kyoeong Koo Chi, Chan Ouk Jung, Joo Tae Moon and Moon Yong Lee (Semiconductor R&D, Samsung Electronics Co., Ltd.)

187

Low Temperature Deposition of Poly-crystalline Silicon Films by a High-Density Inductive Plasma

Kazumoto Goshima, Hirotaka Toyoda, Mikihiko Nishitani*, Masatoshi Kitagawa**, Hiroshi Yamazoe*, and Hideo Sugai* (Department of Electrical Engineering, Nagoya University, *Display Device Development Center, **Central Research Lab., Matsushita Electric Industrial Co.)

193

High Performance Etching Process for Organic Films

Mitsuhiro Ohkuni, Shunsuke Kudo, Tomoyuki Sasaki, Kenji Tateiwa, Hideo Nikou, Takahiro Matsuo and Masafumi Kubota (ULSI Process Technology Development Center, Matsushita Electronics Corp.)

199

A Mass Spectrometric Study of Chamber Conditioning and Plasma Cleaning for TSI Photoresist Dry Etch Development

Z. S. Huang, Wendy Nguyen and Yosias Melaku (Lam Research Corp.)

205

Sidewall-Fence-Free Pt Etching using "Round Head" Resist mask by Magnetron-RIE

Takashi Ynunogami, Hisayuki Kato and Syunji Sasabe* (Semiconductor Technology Development Center, *Semiconductor Manufacturing Technology Center, Hitachi, Ltd.)

211

Electron Cyclotron Resonance Plasma Etching of Ru in O2 and O2/Cl2 Mixture: Process Characteristics and its .Reaction Mechanisms

Keisuke Nakamura, Teruo Shibano and Tatuo Oomori (Advances Technology R&D Center, Mitsubishi Electric Corp.)

217

Optical Emission Study of the Inductively Coupled SiCl4/SF6 Plasma for GaAs/AlGaAs Selective Dry Etching

Yusuke Matsukura, Jun Wada and Hitoshi Tanaka (Fujitsu Laboratories Ltd.)

223

Donor Neutralization by Fluorine Containing Plasma in Si Doped N-Type GaAs Crystals

Jun Wada, Yusuke Matsukura and Hitoshi Tanaka (Fujitsu Laboratories Ltd.)

229

Real Time Monitoring and Control of Plasma Etching

M. Sarfaty, C. Baum, M. Harper, N. Hershkowitz and J. L. Shohet (ERC for Plasma-Aided Manufacturing, University of Wisconsin-Madison)

235

The Issues of the Dry Etcher on the Production Line

Kenya Iwasaki, Yutaka Kadogawa, Shouichi Hino* and Shunji Hayashi (LSI Process Engineering Dept., *Equipment Engineering Dept., Miyazaki Oki Electronic Co, Ltd.)

243

High Density Aluminumetcher Process Window Comparison

John Jacobs, Kazumi Saito and Jiro Yamamoto (VLSI Manufacturing Engineering Division, NEC Corp.)

249

In-situ Real-time Wafer Temperature Monitoring for Plasmas Etch

Maocheng Li, Yalei Kuang and Shaoher Pan (Silicon Etch Division, Applied Materials Inc.)

255

SiO2 Etching using PFC Replacement Chemicals

Yasushi Goto, Tokuo Kure and Tsuyoshi Takaichi* (Central Research Laboratory, Hitachi Ltd., *Gaseous & Chemicals Division, Showa Denko K.K.)

261

High Aspect Ratio SiO2 Etching with High Resist Selectivity Improved by Addition of Organicsilane to Tetrafluoroethyl Trifluoromenthyl Ether (HFE 227)

Yasuhiko Chinzei, Masanori Ozawa, Toshiaki Kikuchi, Kenji Horioka*, Haruo Shindo**, Takanori Ichiko and Yasuhiro Horiike (Dept. of Electrical & Electronics Engineering, Toyo University, *Technology Center, Applied Material Japan, **Dept. of Applied Physics, Tokai University)

267

Low-k Meterial for Multilevel Interconnections of Integrated Circuits

Toru Tatsumi (Silicon System Research Laboratories, NEC Corp.)

273

Low-Dielectric Constant Mechanism of SiO:F

Yukihiro Simogaki, Sang-Woo Lim, Yoshiaki Nakano*, Kunio Tada*, and Hiroshi Komiyama (Department of Chemical System Engineering, *Department of Electronic Engineering, University of Tokyo)

275

Role of Ion in FSG Deposition Process using High Density Plasma CVD

Ryota Katsumata, Hideshi Miyazima*, Yasusi Nakasaki and Nobuo Hayasaka* (Advanced Semiconductor Device Research Labs. R&D Center, *Microelectronics Engineering Lab., Toshiba Corp.)

281

Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor Deposition

Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara, Manabu Iguchi and Tadahiko Horiuchi (Silicon Systems Research Labs., ULSI Device Development Labs., NEC Corp.)

287

Spin-on Low Dielectric Constant Films for the Interlayer Dielectric in ULSI Devices

Toshiaki Hasegawa, Masanaga Fukasawa, Nobuyoshi Matsuzawa*, Shingo Kadomura and Junichi Aoyama (ULSI Labs., Semiconductor Company, *Materials Research Laboratories, Research Center, Sony Corp.)

293

Porous SOG films for Intermetal Dielectics

Nobuo Aoi, Gaku Sugawara and Minoru Kubo (Central Research Labs., Matsusita Electric Industrial Co., Ltd.)

299

Mode Changes and Power Coupling in a Helicon Plasma Source

A. R. Ellingboe (Lawrence Livermore National Laboratory)

305

Trace Rare Optical Emission Spectroscopy for Determination of Electron Temperature and Species Concentrations in Chlorine-Containing Plasmas

V. M. Donnelly, M. V. Malyshev, A. Kornblit, N. A. Ciampa, J. I. Colonell and J. T. C. Lee (Bell Labs.)

313

Characteristics of UHF-band ECR Plasma

Naoshi Itabashi, Mitsuru Okigawa, Shuichi Noda, Yukinobu Hikosaka, Masami Inoue, Ken'etsu Yokogawa*, Nobuyuki Negishi*, Keizo Suzuki* and Shinichi Tachi* (Association of Super-Advanced Electronics Technologies, *Central Research Laboratory, Hitachi Ltd.)

321

Comparison of Electron Energy Distribution Functions for Various Types of Plasma Source

Shuichi Noda, Mitsuru Okigawa, Naoshi Itabashi, Yukinobu Hikosaka, Keizo Kinoshita, Tetsuya Tatsumi Hideo Nakagawa and Masami Inoue (Association of Super-Advanced Electronics Technologies)

327

A Combination of Gas Phase Diagnostics for Deposition and Etching Plasmas (Paper is not received)

C. Woods (University of Wisconsin)

333

Silicon Particulates in a-Si:H Deposition Discharges

Alan Gallagher (University of Colorado and National Institute of Standards)

335

Modeling of Reactions in Liquid Source Chemical Vaper Deposition of (Ba, Sr) TiO3 Films

Mikio Yamamuka, Takaaki Kawahara, Masayoshi Tarutani, Tsuyoshi Horikawa and Koichi Ono (Advanced Technology R&D Center, Mitsubishi Electric Corp.)

343

Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-μm-Diameter Range

Naokatsu Ikegami, Atsushi Yabata, G. L. Liu, Izumi Aikawa, Eiji Uchida, Norio Hirashita and Jun Kanamori (VLSI R&D Center, Oki Electric Industry Co., Ltd.)

349

A Generation Mechanisms and Dissolution Technique of Oxidation Retardation Layer

Sumio Sekiyama, Yoshikazu Motoyama, Kenya Iwasaki, *Kouichirou Inazawa and *Shigeyoshi Kojima (Miyazaki Oki Electronic Co, Ltd., *Tokyo Electron Yamanashi Ltd.)

355

High Aspect Contact Fabrication using High Density Plasma

Hidetaka Nambu, Hideaki Kawamoto and Hidenobu Miyamoto (Eiji) (ULSI Device Development Labs., NEC Corp.)

361

Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching

Kazumasa Yonekura, Shigenori Sakamori, Takahiro Yokoi, Nobuo Fujiwara and Hiroshi Miyarake (ULSI Lab., Mitsubishi Electric Corp.)

367

A Study for Characterizing Fluorocarbon Polymer Film Deposited on Inner Surface of Very High-Aspect-Ratio Contact Holes by Using SIMS

G.-L. Liu, Izumi Aikawa, Tadashi Koseki, Naokatsu Ikegami Eiji Uchida, Norio Hirashita and Jun Kanamori (VLSI R&D Center, Oki Electric Industry Co., Ltd.)

373

Parallel-Plate Structure, Ultra-High-Frequency-Electron Cyclotron Resonance Plasma for Oxide Etching

Ken-etsu Yokogawa, Nobuyuki Negishi, Seiji Yamamoto, Keizo Suzuki and Shin-ichi Tachi (Central Research Laboratory, Hitachi Ltd.)

379

Mechanism of Radical Control in a Capacitive RF Plasma for ULSI Processing

Tetsuya Tatsumi, Hisataka Hayashi, Satoshi Morishita, Shuichi Noda, Mitsuru Okigawa, Naoshi Itabashi,Yukinobu Hikosaka and Masami Inoue (Plasma Technology Lab., Association of Super-Advanced Electronics Technologies)

385

Spatial Distribution Measurement of Absolute CFx Radical Absolute Density in ECR Fluorocarbon Plasma

Hiroyoshi Arai, Masayuki Nakamura, Koji Miyata, Kazushi Fujita, Ryohei Yoshida, Masafumi Ito, Masaru Hori, Akihiro Kono, Toshio Goto and *Nobuo Ishii (Department of Quantum Engineering, Nagoya University, *Central Research Lab., Tokyo Electron Ltd.)

391

Control of CFx and F Radical Density with Wall Biasing Technique

Masashi Mori, Seiji Yamamoto, Kazunori Tsujimoto, Ken-etsu Yokogawa and Shin-ichi Tachi (Central Research Laboratory, Hitachi Ltd.)

397

Radical Composition in Oxide Etching and the Influence of Ion Bombardment

Keiji Nakamura, Naoto Hirakata and Hideo Sugai (Department of Electrical Engineering, Nagoya University)

403