Surface-Catalysed Atom-Atom Recombination
J.W. Coburn, Gowri P. Kota and David B. Graves (Department of Chemical Engineering, University of California Berkeley)
1
High Aspect Ratio SiO2 Etching Employing Fluorocarbon Substituting Gases
Yannick Feurprier, Makoto Ogata, Masanori Ozawa, Toshiaki Kikuchi, Yasuhiko Chinzei, Haruo Shindo*, Takanori Ichiki and Yasuhiro Horiike** (Department of Electrical Engineering, Toyo University, *Department of Applied Physics, Tokai University, ** School of Materials Science Engineering, University of Tokyo)
9
Characteristics of Fluorocarbon Polymer Films Analyzed by Photo-Elastic Modulated Fourier Transform Infrared (PEM FTIR) Spectroscopy
C.W. Chu, H.H. Doh, C.K. Lee, J.H. Kim, S.S. Jeong, C.J. Kang, T.H. Ahn and J.T. Moon (Semiconductor R&D Center, Samsung Electronics Co., Ltd.)
17
Surface Kinetics of CFx Radicals in Fluorocarbon Plasmas Studied by Laser-Induced Fluorescence
C. Suzuki, K. Sasaki and K. Kadota (Department of Electronics, Nagoya University)
23
The Relationship of Ion-Induced Defects to Etching-Rate near Si and SiO2 Surface on SiO2 Plasma Etching
Mitsuru Okigawa, Tetsuya Tatsumi, Miyako Matsui, Yukinobu Hikosaka and Makoto Sekine (Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies)
29
Diagnostics of Plasma-Surface Interactions in Fluorocarbon Plasmas
Jean Paul. Booth (University Joseph Fourier)
35
Mechanism of Etch Rate Control in a Capacitive RF Plasma for ULSI Processing
Tetsuya Tatsumi, Yukinobu Hikosaka, Satoshi Morishita, Miyako Matsui and Makoto Sekine (Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies)
43
Mechanism of W/WN/poly-Si Gate Etching
Tadashi Umezawa, Hiroshi Kawakami, Takafumi Tokunaga, Kazuo Nojiri, Kazutami Tago* and Kinya Kobayashi* (Device Development Center, *Hitachi Research Laboratory, Hitachi Ltd.)
49
Silicon Oxide Selective Etching and Chamber Cleaning Process by Radical Control for Preventing Global Warming
Kazushi Fujita, Shigeto Kobayashi, Masafumi Ito, Masaru Hori and Toshio Goto (Department of Quantum Engineering, Nagoya University)
55
Contact Plug Formation Using Chemical Dry Etching (CDE) Etch back of Blanket CVD W
Junko Abe, Akihiro Kojima, Takayuki Sakai, Hisataka Hayashi, Makoto Sekine, Tomoaki Yoshimori*, Sadayuki Jimbo**, Yukimasa Yoshida** and Tokuhisa Ohiwa (Microelectronics Engineering Laboratory, Toshiba Corp., *Shibaura Mechatronics Co., Ltd., **Integrated Circuit Advanced Process Engineering Department, Toshiba Corp.)
61
Direct Deposition of Blanket Tungsten Layer on SiO2 by Pre-Exposure of Helium Plasma
Takashi Noma, Kwang Soo Seol*, Makoto Fujimaki* and Yoshimichi Ohki* (MOS-LSI Division, Sanyo Electric Co., Ltd., *Department of Electrical, Electrics and Computer Engineering, Waseda University)
67
High Rate Formation of Poly-Silicon at Low temperature Using UHF SiH4/H2 Plasma
Ryohei Yoshida, Shigeaki Sumiya, Bencheruki Mebarki, Masafumi Ito, Masaru Hori, Toshio Goto, Seiji Samukawa* and Tsutomu Tsukada** (Department of Quantum Engineering, Nagoya University, *NEC Corp., **ANELVA Corp.)
73
Special Lecture for 20th Anniversary
Jun-ichi Nishizawa (President, Iwate Prefectural University)
Study of Dominant Mechanisms in Dielectric Etching with a Physically-based Profile Simulator
V. Vahedi, D.J. Cooperberg, J.M. Cook and R.A. Gottscho (Lam Research Corp.)
79
Effect of Pulse Modulated Plasma on a Charge Build-Up of the Microscopic Structure
Jun Matsui, Nobuhiko Nakano and Toshiaki Makabe (Department of Electrical Engineering, Facultyof Science and Technology, Keio University)
85
Characterization and Elimination of a Novel Notching Caused by LOCOS Topography-Dependent Charging in Densely Patterned Polycide Gate Electrodes and Interconnects
Bor-Ru Sheu, Ming-Yuan Tsai, Tzu-Shih Yen and Erik S. Jeng (DRAM Technology Division, Vanguard International Semiconductor Corp.)
91
Reduction of Topography-Dependent Charging Damage by the Pulse-Time-Modulated Plasma
Hiroto Ohtake, Seiji Samukawa, Ko Noguchi and Tadahiko Horiuchi (Silicon Systems Research Labs and ULSI Device Development Labs., NEC Corp.)
97
Effect of the Pattern Structures on the Damage Current during Plasma Etching
Akihiro Hasegawa, Fumihiko Shimpuku, Masaaki Aoyama*, Koichi Hashimoto, Moritaka Nakamura and Daisuke Matsunaga (ULSI Development Division, Fujitsu Ltd., *VLSI Laboratory, Fujitsu VLSI Ltd.)
103
Contactless Characterization of Plasma-Induced Damage in Si Substrate by Photoreflectance Spectroscopy
Hideo Wada, Masashi Agata, Koji Eriguchi*, Akira Fujimoto**, Takeshi Kanashima and Masanori Okuyama (Department of Physical Science, Graduate School of Engineering Science, Osaka University, *Central Research Laboratory, Matsushita Electric Ind. Co., Ltd., **Department of Electrical Engineering,Wakayama National College of Technology)
109
Control of the ExB Induced VT Shift in Merie Dielectric Etchers
Roger Lindley, Dave Galley*, Claes Jorkman, Hongching Shan, Kenny Doan and Kuang-Han Ke (Applied Materials Inc., *Atmel Corp.)
115
The Generation Mechanism of Sidewall-Fence by Pt Etching -The Relation between Etching Area and Sidewall Fence-
Takashi Yunogami (Process Development Dept., Process Device Development Center, Hitachi Ltd.)
117
Dry Etching Method of ITO Film Using HI Gas without Leaving the Iodide Materials
Mitsuru Sadamoto, Noriyuki Yanagawa and Satoru Iwamori (Performance Materials R&D Center, Mitsui Chemicals Inc.)
123
Analyses of LiNbO3 Wafer Surface Etched by ECR Plasma of CHF3 & CF4
Naoki Mitsugi, Kaori Shima, Masumi Ishizuka and Hirotoshi Nagata (New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd.)
129
Endpoint Monitoring Using Ar Mass Analysis in ECR Ion Stream Etching of Sputter-Deposited WSiN for GaAs-MESFET
Chiharu Takahashi, Yoshito Jin, Kazumi Nishimura and Toshiro Ono (NTT System Electronics Laboratories)
135
Selectivity and Profile Control of Poly-Si Etching by Time Modulation Bias Method
Tetsuo Ono, Hiroshi Miyazaki, Tatsumi Mizutani, Yasuo Goto* and Tokuo Kure* (Kasado Works, *Central Research Laboratory, Hitachi Ltd.)
141
Etch Characteristics of Shallow Trench Isolation for 0.18μm Devices
Choong-Bae Kim, Bum-Jin Jun, Jong-Kook Kim, W.G. Kim, Dong-Duk Lee, J.W. Kim, Yeo-Song Seol and I.H. Choi (Semiconductor Research Division, Hyundai Electronics Industries Co., Ltd.)
Effect of Etching By-Product on Profile Control and the Formation of Etching Residue in Shallow Trench Isolation Etching
Kazuyoshi Yoshida, Ken Tokashiki, Hidenobu Miyamoto (ULSI Device Development Laboratories, NEC Corp.)
153
Control of Etched Shape and Selectivity in ECR Ion Stream Etching of Si with Fluoride Gas Mixture
Chiharu Takahashi and Seitaro Matsuo (NTT System Electronics Laboratories)
159
Low-k Dielectric Materials for 0.13μm Logic CMOS and beyond
Tadahiko Horiuchi (ULSI Device Development Laboratories, NEC Corp.)
163
Integration Challenges of Low-k Dielectrics for Advanced ICs
Wei W. Lee and Steve W. Russell* (Taiwan Semiconductor Manufacturing Co., *Texa Instruments, Inc.)
167
Etching Characteristics of Organic Low-k Film
Masanaga Fukasawa, Toshiaki Hasegawa, Shinsuke Hirano* and Shingo Kadomura (ULSI R&D Laboratories, *Production Technology Department, Sony Corp.)
175
In Situ FT-IR Spectroscopy on Fluorocarbon Plasmas Used for Low-k Film Deposition
Tatsuru Shirafuji (Department of Electronics and Information Science, Kyoto Institute of Technology)
183
Spatially Resolved Atomic and Molecular Spectroscopy in Microelectronics Processing Plasmas
G.A. Hebner (Sandia National Laboratories)
191
Behaviors of CFx (x=1~3) and Polymeric Species in Electron Cyclotron Resonance Fluorocarbon Plasmas
Masayuki Nakamura, Kungen Teii, Hirotaka Nakayama, Masafui Ito, Masaru Hori, Akihiro Kono, Toshio Goto and Nobuo Ishii* (Department of Quantum Engineering, Nagoya University, *Central Reserch Laboratory, Tokyo Electron Ltd.)
199
Spatial Structure Analysis of CF and CF2 Radical Densities in a 100-MHz Inductively Coupled Plasma
Hideo Nakagawa, Mitsuru Okigawa, Shuichi Noda, Satoshi Morishita, Katsumichi Ito*, Masami Inoue and Makoto Sekine (Association of Super-Advanced Electronics Technologies, *Matsushita Electric Industrial Co., Ltd.)
205
High Energy Electrons and Etching Performance in SWP and ICP
Hikaru Kokura*, Kengo Yamauchi, Naoki Matsumoto*, Keiji Nakamura, Daisuke Matsunaga**, Moritaka Nakamura** and Hideo Sugai (Department of Electrical Engineering, Nagoya University, *Electronics Engineering Laboratories, Sumitomo Metal Industries Co., Ltd., **ULSI Development Division, Fujitsu Co., Ltd.)
211
Microwave Coupling as a Plasma Diagnostic in an Electron Cyclotron Resonance CVD Reactor
John E. Daugherty (Lam Research Corp.)
217
Modeling of Two Frequency Capacitively-Coupled Plasma in Ar/CF4 Gas Mixture
Nobuhiko- Nakano and Toshiaki Makabe (Department of Electrical Engineering, Faculty of Science and Technology, Keio University)
223
Effect of Increasing the Upper Frequency on Dual Frequency Capacitive-Coupled Plasma
Akira Koshiishi, Masayuki Tomoyasu, Yoshifumi Tahara and Masayuki Kojima* (Tokyo Electron Yamanashi, *Semiconductor and IC Division, Hitachi Ltd.)
229
Measurement and Comparison of EEDF Profiles for Various Types of Plasmas Using OES
Shuichi Noda, Keizou Kinoshita, Hideo Nakagawa, Mitsuru Okigawa, Tetsuya Tatsumi, Masami Inoue and Makoto Sekine (Association of Super-Advanced Electronics Technologies)
235
Characterization of Dielectric Etching Processes by X Ray Photoelectron Spectroscopy Analyses in High Aspect Ratio Contact Holes
O. Joubert, L. Vallier, P. Czuprynski, F. Vinet*, P. Berruyer* and C. Verove** (Branche Developpement, France Telecom, *LETI (CEA-Technologies Avancees) MEL-CENG, **STMicroelectronics)
241
Mechanisms of Highly Selective SiO2/Si3N4 Etching in High-Aspect-Ratio Self-Aligned Contact Hole
Akira Takahashi, Naokatsu Ikegami, Motoki Kobayashi and Jyun Kanamori (VSLI Research and Development Center, Oki Electric Industry Co., Ltd.)
251
Influence of Electron Shading on Highly Selective SiO2 to Si Etching
Kazumasa Yonekura, Toshiharu Katayama, Takahiro Maruyama, Nobuo Fujiwara and Hiroshi Miyatake (ULSI Development Center, Mitsubishi Electric Corp.)
257
Characterization of Highly Selective SiO2/Si3N4 Etching Using C5F8
Youbun Itoh, Akira Koshiishi, Ryukichi Shimizu, Masaaki Hagiwara, Koichiro Inazawa and Eiichi Nishimura (Tokyo Electron Yamanashi Ltd.)
263
Chamber Wall Control by Ion Bombardment in Oxide Etcher
Keiji Nakamura, Shinichi Yoneda and Hideo Sugai (Department of Electrical Engineering, Nagoya University)
269
Investigation of SiO2 Etching Using Low Global Warming Gas (Hexafluoropropylene)
Shigenori Sakamori, Junko Matsumoto, Kazumasa Yonekura, Nobuo Fujiwara and Hiroshi Miyatake (ULSI Development Center, Mitsubishi Electric Corp.)
275
O2 Addition Effects to C3F6 + Trimethylsilane Mixture in High Aspect Ratio SiO2 Etching
Yasuhiko Chinzei, Yannick Feurprier, Takanori Ichiki and Yasuhiro Horiike* (Department of Electrical Engineering, Toyo University, *School of Materials Science Engineering, The University of Tokyo)
281
