Computational Studies of Electron-Impact Dissociation of Gases in Plasma Processing
Carl L. Winstead, Chuo-Han Lee, and B. Vincent McKoy (California Institute of Technology)
1
Spatial Distribution Measurement of Absolute CFx Radical Densities in Plasma Using Novel System of Single-Path IRLAS Combined with LIF on the Identical Beam Path
Masayuki Nakamura, Masafumi Ito*, Masaru Hori, Toshio Goto, and Nobuo Ishii** (Department of Quantum Engineering, Nagoya University, *Department of Opto-Mechatronics Faculty of Systems Engineering, Wakayama University, **Central Research Lab., Tokyo Electron Ltd.)
9
Gas Phase Polymerization and Particle Formation Processes in C4F8 Plasmas
Kazuo Takahashi and Kunihide Tachibana (Department of Electronic Science and Engineering, Kyoto University)
15
Study of Reactive Large Molecules in High-Density Fluorocarbon Plasmas
Kungen Teii, Masaru Hori, Masafumi Ito*, Toshio Goto, and Nobuo Ishii** (Graduate School and Faculty of Engineering, Nagoya University, *Wakayama University, **Tokyo Electron Ltd.)
21
Ladder-Type Surface Profile in a Submicron Self-Aligned Contact Etching
Jisoo Kim, Chang-Woong Chu, Tae-Hyuk Ahn, Joo-Tae Moon, and Sang-In Lee (Semiconductor R&D Center, Samsung Electronics Co., Ltd.)
27
A Novel Plasma Chemistry for Highly Selective Oxide Etch
Raymond Hung, Jerry Pender, Betty Tang, Chunchi Cui, Hongching Shan, Keiji Horioka, Yan Ye, and Mike Rice (Applied Materials, Inc.)
33
High-Performance 0.05μm Contact Hole Etching Using a New Radical Generation Method
T. Mukai and S. Samukawa (Silicon Systems Research Lab., NEC Corp.)
39
Investigation of Mechanism for SiO2 Selective Etching Over Si3N4 Using Fluorocarbon Gas
Miyako Matsui, Tetsuya Tatsumi, and Makoto Sekine (Association of Super-Advanced Electronics Technologies (ASET))
45
Mechanism of Surface Reaction on Si3N4 in Highly Selective SiO2/Si3N4 Etching Employing Low-Pressure ECR Plasma
Kiyoshi Kamiya, Masafumi Ito*, Masaru Hori, and Toshio Goto (School of Engineering, Nagoya University, *School of Engineering, Wakayama University)
51
Polymer-Enhanced Advanced Contact Etching (PEACE) with Long-Cycle Bias-Modulated Plasma
Chang-Woong Chu, Tae-Hyuk Ahn, Jisoo Kim, Sang-Sup Jeong, Wan-Jae Park, and Joo-Tae Moon (Semiconductor R&D Center, Samsung Electronics Co., Ltd.)
57
Integrated Multi-Scale Models of Ionized Metal Plasma PVD: Equipment to Atoms
Valli Arunachalam, Dan Coronell, Peter L. G. Ventzek, Shahid Rauf, Michael Hartig, Murray Daw, Benjamin Liu, Dean Denning, and Sam Garcia (Motorola Inc.)
63
Fabrication of TiO2 Film Deposited by Controlled Electron Beam Excited Plasma and Dissolution of NOx
S. Ikezawa, T. Hara*, R. Suzuki, T. Kubota, S. Koh, M. Takahashi, and Y. Ninomiya (Chubu University, *Toyota Technological Institute)
69
Reaction Mechanisms for Liquid Source Chemical Vapor Deposition of (Ba, Sr)TiO3 Thin Films (2): Dependence on the Substrate Temperature
Mikio Yamamuka, Takaaki Kawahara, Masayoshi Tarutani, Tsuyoshi Horikawa, and Tatsuo Oomori (Advanced Technology R&D Center, Mitsubishi Electric Corp.)
75
The Relationship of Deposition Film to Charging Damage in Contact Hole Etching
T. Maruyama, H. Kawamoto, and N. Aoto (ULSI Device Development Lab., NEC Corp.)
81
Dependence of Topography-Dependent Charging Damage on Deposited Sidewall Film
E. Soda, K. Tokashiki, and N. Aoto (ULSI Device Development Lab., NEC Corp.)
87
Reduction of Electron Shading Damage During High Temperature Etching Using Time Modulation Bias Method
Kazuo Nojiri, Nobuyuki Mise*, Motohiko Yoshigai**, Yasuhiro Nishimori***, Hiroshi Kawakami, Tadashi Umezawa, Takafumi Tokunaga, and Tatehito Usui* (Device Development Center, Hitachi Ltd., *Mechanical Engineering Research Lab., Hitachi Ltd., **Hitachi Techno Engineering Co., Ltd., ***Kasado Administrative Division, Hitachi Ltd.)
93
Numerical Simulation on Electron Shading Phenomena Considering Current-Voltage Characteristic of Gate Oxide
Nobuyuki Mise, Tatehito Usui, Kazuo Nojiri*, Kazuyuki Tsunokuni**, Tetsuo Ono***, and Masato Ikegawa (Mechanical Engineering Research Lab., Hitachi, Ltd., *Device Development Center, Hitachi Ltd., **Semiconductor & Integrated Circuits, Hitachi Ltd., ***Kasado Works, Hitachi Ltd.)
99
0.1μm Precise Control Gate Etching on Ultra-Thin Gate Oxide Employing Dual Frequency Capacitively Coupled Plasma (DFCCP)
T. Fukasawa, T. Miura, A. Yamashita, H. Kanbara, F. Higuchi, M. Tomoyasu, H. J. Lin*, H. J. Tao*, C. S. Tsai*, and M. S. Liang* (ES Development Engineering Department, Tokyo Electron Yamanashi Ltd., *Advanced Etch Department, Taiwan Semiconductor Manufacturing Co., Ltd.)
105
A Mechanistic Study of CD Gain in Sub-0.18μm Silicon Etch
V. Vahedi, J. Daugherty, S. Huang, D. Cooperberg, R. A. Gottscho, H. J. Tao*, H. J. Lin*, C. S. Tsai*, and M. S. Liang* (Lam Research Corp., *Taiwan Semiconductor Manufacturing Company)
111
CD-Controlled Gate Etching with High Uniformity Using UHF-ECR Plasma
Naoshi Itabashi, Masahito Mori, Naoyuki Kofuji, Masayuki Kojima*, Takashi Fujii**, Akitaka Makino**, Motohiko Yoshigai***, Hiroaki Ishimura**, Kazunori Tsujimoto, and Shinichi Tachi (Central Research Lab., Hitachi Ltd., *Semiconductor & Integrated Circuit Division, Hitachi Ltd., **Kasado Semiconductor Equipment Product Division, Hitachi Ltd., ***Hitachi Techno Engineering Co., Ltd.)
115
Fluorocarbon Polymer Formation, Characterization and Reduction in Polysilicon Etching with CF4-Added Plasma
Songlin Xu, Zhiwen Sun, Arthur Chen, Xueyu Qian, and Dragan Podlesnik (Technology Development, Silicon Etch Division, Applied Materials)
121
Control of Sidewall Deposition and Profile in Ti-Polycide Etching
Masatoshi Nagase, Eiichi Soda, Kazuyoshi Yoshida, and Nahomi Aoto (ULSI Device Development Lab., NEC Corp.)
127
TiSix/Poly-Si Stack Gate Etching for 0.13μm Tech. and Beyond
Bum-Jin Jun, Jae-Young Kim, Woon-Young Song, Chang Ju Choi, Jin-Woong Kim, Yil-Wook Kim, and Il-Hyun Choi (Memory R&D Division, Hyundai Electronics Industries Co., Ltd.)
133
Low Pressure Etching of Poly-Si Gate with Pulsed ECR Plasma
Nobuo Fujiwara, Takahiro Maruyama, and Hiroshi Miyatake (ULSI Development Center, Mitsubishi Electric Corp.)
137
Profile Evolution During Polysilicon Gate Etching with Cl2/HBr/O2 Plasma Chemistry
Mutumi Tuda, Kenji Shintani, Hajime Kimura*, Shingo Tomohisa, and Hiroki Ootera (Advanced Technology R&D Center, Mitsubishi Electric Corp., *ULSI Development Center, Mitsubishi Electric Corp.)
143
Anomalous Junction Leakage Current Induced by Plasma Dry Etch of Shallow Trench Isolation (STI)
Kung Linliu, Kun-Hsu Wu, Hsing-Chih Lin, Ko-Hsing Chang, James Lin, Shin-Puu Jeng, and Min-Hwa Chi (Advanced Process Technology Division, Worldwide Semiconductor Manufacturing Corp.(WSMC))
149
Highly Selective Etching of W/WN/poly-Si Gate on Thin Oxide Film with Gaspuff Plasmas
H. Ootera, M. Taki, K. Shintani, S. Tomohisa, K. Nishikawa, M. Tuda, and K. Hayashi (Advanced Technology R&D Center, Mitubishi Electric Corp.)
155
Deep Silicon Trench Etching for Sub-0.15μm DRAM Capacitor Application
Bor-Ru Sheu, M. C. Chian, H. C. Liu, S. H. Huang, H. C. Chen, H. H. Tsai, C. M Yang*, T. C. Ho*, S. T. Lee*, Y. C. Tien*, and C. F. Hsu* (Advanced Technology Division, Winbond Electronics Corp., *Etching Eng. Dept., Winbond Electronics Corp.)
161
Rate Stabilization in HBr-based Si Deep-Trench Etching Using Planar Inductively Coupled Plasma
Koji Takiguchi and Masaaki Sato (Semiconductor Technology Headquarters, New Japan Radio Co., Ltd.)
167
Highly Accurate Process Control of Etch-Rate-Uniformity by Symmetric Space Model
Mitsuhiro Ohkuni, Kouhei Tado, Masaki Sakamoto, and Hideo Nikoh* (Production Eng. Center, Matsushita Electronics Corp., Semiconductor Company, *ULSI Process Tech. Dev. Center, Matsushita Electronics Corp., Semiconductor Company)
173
Wall Control in Oxide Etcher by Alternating Ion Bombardment
Keiji Nakamura, Masanori Ohwaki, and Hideo Sugai (Graduate School of Engineering, Nagoya University)
179
A New Technique of In-situ Plasma Monitoring Employing MTS RF Harmonic Analysis System
Shunji Hayashi, Yutaka Kadogawa, Tadashi Mori, Toshinori Tsuji, and Masamitsu Kaneko (LSI Process Engineering Department, Miyazaki Oki Electric Co., Ltd.)
185
Characteristics and Mechanism of Etch Process Sensitivity to Chamber Surface Condition
Songlin Xu, Zhiwen Sun, Xueyu Qian, and Dragan Podlesnik (Technology Development, Silicon Etch Division, Applied Materials)
191
Plasma and Etching Characteristics of an Advanced Dual Frequency Reactive Ion Etcher
Sunil Wickramanayaka, Yoshizo Miura, Kenichi Kagami, Daisuke Kondo, and Yasumi Sago (Basic Eng. Group, Anelva Corp.)
197
Modeling of Oxide Etch Plasma Processes An Industry Approach
Peter Ventzek, Shahid Rauf, Dan Coronell, Valli Arunachalam, Karla Waters*, and Harold Anderson* (Semiconductor Products Sector, Motorola Inc., *Department of Chemical and Nuclear Engineering, University of New Mexico)
203
Wave Modes and EEDF Diagnostics of SWP for Oxide Etching
Hikaru Kokura*,**, Kengo Yamauchi*, Masanori Hosokawa*, Keiji Nakamura*, Hirotaka Toyoda*, Toshiyasu Hayami***, and Hideo Sugai* (*Department of Electrical Engineering, Nagoya University, **ULSI Development Division, Fujitsu Ltd., ***Semiconductor Equipment Division, Sumitomo Metal Industries Ltd.)
209
Highly Selective Etching of Organic SOG to SiN for Cu Damascene Interconnects Using New Gas Chemistry of C4F8/N2/Air
Shouichi Uno, Takashi Yunogami, Kazutami Tago*, Atsushi Maekawa**, Shuntaro Machida***, Takafumi Tokunaga, and Kazuo Nojiri (Device Development Center, Hitachi Ltd., *Hitachi Res. Lab., Hitachi Ltd., **Hitachi ULSI Systems Ltd., ***Central Res. Lab., Hitachi Ltd.)
215
Organic Low-k Film Etching Using N-H Plasma
Masanaga Fukasawa, Tetsuya Tatsumi, Toshiaki Hasegawa, Shinsuke Hirano*, Koji Miyata, and Shingo Kadomura (LSI Business & Technology Development Group, CNC, Sony Corp., *Production Tech. Dept. CNC, Sony Corp.)
221
Etching Process for Low-k Material CPFP of k=2.4 in N2/He Plasma
Koji Miyata, Masanaga Fukasawa, Toshiaki Hasegawa, Koichi Ikeda, and Shingo Kadomura (LSI Business & Technology Development Group, CNC, Sony Corp.)
227
A Novel Method for Resist Removal after Etching of the Organic SOG Layer with the Use of Adhesive Tape
Yoshio Terada, Eiji Toyoda, Makoto Namikawa, Atsushi Maekawa*, and Takafumi Tokunaga** (Semiconductor Related Material Division, Nitto Denko Corp., *ULSI Development Operation, Hitachi ULSI Systems Co., Ltd., **Process Development Department, Device Development Center, Hitachi Ltd.)
233
Studies of C2F4 Glow Discharge Polymerization and the a-C:F Film's Dielectric Constant Properties
E. G. Loh, F. R. Hutagalung, H. Komiyama, and Y. Shimogaki* (Department of Chemical System Engineering, School of Engineering, University of Tokyo, *Department of Materials Engineering, University of Tokyo)
239
Evaluation of Ion and Particle Interaction in CVD Process
Kikuo Okuyama, Manabu Shimada, and Toshiyuki Fujimoto (Faculty of Engineering, Hiroshima University)
245
Low Temperature Crystallization of SrBi2Ta2O9 Ferroelectric Films by Ultraviolet Laser Irradiation
H. Hiramatsu, T. Ito, Y. Ohki, K. S. Seol*, D.-S. Shin**, and I.-H. Choi** (Department of EECE, Waseda University, *The Institute of Physical and Chemical Research (RIKEN), **Department of MSE, Korea University)
253
Fast Deposition of Microcrystalline Silicon Using High-density SiH4 Microwave Plasma
Hajime Shirai, Yoshikazu Sakuma, Haiping Liu, Yoshimizu Moriya, and Hiroyuki Ueyama* (Department of Functional Materials Science, Saitama University, *Nihon Koshuha Co., Ltd.)
259
Ion-Ion Plasmas : Fundamentals and Applications
Vikas Midha and Demetre J. Economou (Department of Chemical Engineering, University of Houston)
265
HF Vapor Processing in Sub-Monolayer Regime for an All Dry Post RIE Clean
Herbert H. Sawin (MIT)
271
In-situ Observation of Si Native Oxide Removal Employing Hot NH3/NF3 Exposure
Hiroki Ogawa, Tomoharu Arai*, Yannick Feurprier, Yuzuru Takamura, Takanori Ichiki*, and Yasuhiro Horiike (Department of Materials Science, The University of Tokyo, *Department of Electric and Electronics Engineering, Toyo University)
273
Influence of RIE Applied to Si Substrate on Epitaxial Si Growth and Its Removal
Hisataka Hayashi, Kazuya Ohuchi, Kiyotaka Miyano, Akira Hokazono, Ichiro Mizushima, and Tokuhisa Ohiwa (Microelectronics Engineering Lab., Toshiba Corp. Semiconductor Company)
279
The Interaction of Fluorocarbon Ions with Surfaces
A. W. Kleyn (FOM Institute for Atomic and Molecular Physics)
285
Investigation on the Mechanism of SiO2 Etching Taking into Account Radical Sticking in a Hole
M. Izawa, K. Yokogawa, S. Yamamoto, N. Negishi, Y. Momonoi, K. Tsujimoto, and S. Tachi (Central Research Lab., Hitachi Ltd.)
291
Flux Control for High-Aspect-Ratio Contact-Hole Etching
T. Tatsumi, M. Matsui, S. Kobayashi, L. Wang, S. Noda, and M. Sekine (Plasma Technology Lab., ASET)
297
Bombardment Effects of Energetic Species Irradiated onto the Bottom Surface of Ultrahigh-Aspect-Ratio Contact Holes
Naokatsu Ikegami, Takashi Ichimori, Norio Hirashita, and Jun Kanamori (VLSI R&D Center, Oki Electric Industry Co., Ltd.)
303
Measurement of Incident Ion Flux Through Real-Contact-Hole-Size Micro Capillary Plate
S. Noda, T. Kinoshita*, Y. Hikosaka, N. Ozawa, H. Tsuboi**, K. Kinoshita, and M. Sekine (Association of Super-Advanced Electronics Technologies (ASET), *Kobe Steel, Ltd., **ULVAC Japan, Ltd.)
309
