Understanding ICP Etching by Probing the Surface Layer using Laser-induced Thermal Desorption and by Optical Analysis of the Plasma
I. P. Herman, N. C. M. Fuller, Jae Choe, and Vincent Donnelly* (Columbia Univ., *Bell Lab., Lucent Technologies)
1
Application of the In-Situ Monitoring System Using RE Harmonics on the LSI Mass-Production Fab
Yutaka Kadogawa, Shunji Hayashi, and Toshinori Tsuji* (Miyazaki Oki Electric Co., Ltd., *Miyazaki Municipal Univ.)
7
An Atmospheric Pressure Microplasma Source on a Chip Using 13.56 MHz Capacitively Coupled Discharge
Hiroyuki Yoshiki and Yasuhiro Horiike* (Tsuruoka National College of Technology, *Dept. of Materials Engineering, School of Eng., The Univ. of Tokyo)
13
Capacitively Coupled Atmospheric VHF CF4 Plasma Studied by Laser Induced Fluorescence Spectroscopy with Pulsed OPO Laser
Yasushi Oshikane, Katsuyoshi Endo, Toshihiko Kataoka, Haruyuki Inoue, Yoshiyuki Yokoyama, and Shoichi Kawashima (Dept. of Precision Science and Technology, Graduate School of Engineering, Osaka Univ.)
19
Effects of VUV on Plasma Charging
James P. McVittie, Mayur Joshi, and Krishna Saraswat (Stanford Univ.)
25
< DPS2000 Best Paper Award Winner>
High-Aspect-Ratio Contact Hole Etching in UHF-ECR Plasma
Nobuyuki Negishi, M. Izawa, K. Yokogawa, Y. Momonoi, T. Yoshida*, K. Nakaune**, H. Kawahara**, M. Kojima***, K. Tsujimoto, and S. Tachi (Central Research Lab., Hitachi Ltd., *Hitachi Techno Engineering Co., Ltd., **Kasado Semiconductor Equipment Product Div., Hitachi Ltd., ***Semiconductor & Integrated Circuits Div., Hitachi Ltd.)
31
Control of Surface Reactions for Next-Generation Dielectric Etching
Tetsuya Tatsumi, Miyako Matsui, Shoji Kobayashi, Keizo Kinoshita, and Makoto Sekine (Plasma Technology Lab., ASET)
37
Resist Sidewall Protection Etching
Y. Tezuka, N. Ikegami*, and Y. Horiike (Dept. of Material Science, School of Eng., The Univ. of Tokyo, *Oki Electric Industry Co., Ltd.)
43
Mechanism of Dovetailing in the Oxide Etching
Jisoo Kim, Kyoung-Sub Shin, Chang-Woong Chu, Tae-Hyuk Ahn, and Joo-Tae Moon (Semiconductor R&D Center, Samsung Electronics Co., Ltd., Korea)
49
Characterization of SAC Etching in Gas Circulation RIE
Itsuko Sakai, Tokuhisa Ohiwa, Katsuya Okumura, Yusuke Hirayama*, Kazuya Nagaseki*, and Masashi Saitoh* (Process & Manufacturing Engineering Center, Toshiba Corp., Semiconductor Company, *ES Development Dept., Tokyo Electron Yamanashi Ltd.)
55
Low Temperature Crystallization of SrBi2Ta2O9 and YMnO3 Ferroelectric Films by Ultraviolet Laser Irradiation
H. Hiramatsu, T. Ito*, Y. Ohki*, K. S. Seol**, I. H. Choi***, and Y. T. Kim**** (*Dept. of Eleectrical, Electronics, and Computer Engineering, Waseda Univ., **RIKEN, ***Korea Univ., ****KIST)
61
Study on Particle Formation During RF Plasma CVD Process Using a Low-Pressure Differential Mobility Analyzer
Kwang Soo Seol, Yasuyuki Tsutatani, Toshiyuki Fujimoto, Hidetoshi Nagamoto*, Yoshiki Okada, and Kazuo Takeuchi (RIKEN Applied Laser Chemistry Lab., *Dept. of Environmental Chemical Eng., Kogakuin Univ.)
67
Low-temperature Formation of Highly Oriented Poly-crystalline Si Thin Film Using UHF Plasma CVD and Its Process Diagnostics Employing in-situ Techniques
M. Hori, K. Murata, Y. Mizutani, E. Iwosaka, S. Takashima, T. Goto, S. Samukawa*, and T. Tsukada** (Nagoya Univ., NEC*, ANELVA**)
73
Oxygen-originated Donor Generation and Its Suppression in the Formation of the Gate Oxide Films Using Plasma Activated Oxygen
Kyozo Kanamoto*,**, Takashi Yoshida*, Toru Oizumi*, Akihiko Murai*, Toru Kurabayashi*, and Jun-ichi Nishizawa* (*Sendai Research Center, Telecommunications Advancement Organization, **Dept. of Materials Science, Graduate School of Engineering, Tohoku Univ.)
79
Initial Oxidation of Si(001) Surfaces Induced by Translational Energy of O2 Molecules
Yuden Teraoka, Akitaka Yoshigoe, and Mutsumi Sano (Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute)
85
A Basic Study on Optical Voltage and Current Sensors for a Real Time Abnormality Detection System Using RF Harmonics
oshinori Tsuji, Tadamitsu Kaneko, Shunji Hayashi, Yutaka Kadogawa, and Tadashi Mori (Miyazaki Municipal Univ., *Miyazaki Oki Electric Co., Ltd.)
91
Numerical 3-D Analysis of Electromagnetic Waves in a Planar-Type Surface Wave Plasma Processing Device
Shinichi Kitamura, Hisanao Hazama, Keiichirou Suzuki, and Sumio Kogoshi (Dept. of Electrical Engineering, Faculty of Science and Technology, Science Univ. of Tokyo)
97
Application of Atmospheric-pressure Torch Plasma to Resist and Polymer Removals
Sang-Hun Seo, Keoyng-Koo Chi, Seung-Pil Chung, Ji-Soo Kim, Chang-Woong Chu, and Tae-Hyuk Ahn (Semiconductor R&D Center, Samsung Electronics Co., Ltd., Korea)
103
Molecular Dynamics Simulations of Etching Processes by Florine Ion Impacts
Takaaki Aoki, Shun-ichi Chiba, and Jiro Matsuo (Ion Beam Engineering Experimental Lab., Kyoto Univ.)
109
Highly Selective Gate Etching on Ultrathin Oxide Film with Gaspuff Plasmas Aspect Ratio Dependence of Etching Selectivity of Poly-Si over Oxide Film
H. Ootera, M. Takim K. Shiratachi, and M. Tuda (Advanced Technology R&D Center, Mitsubishi Electric Corp.)
115
Gate Engineering for Sub 50nm CMOS Devices
L. Vallier, J. Foucher, G. Cunge, D. Fuard, and O. Joubert (LTM/CNRS)
121
How to Eliminate Profile Kink and ReduceDepth Micro-Loading for Shallow Trench Isolation Etch in the 0.18 μm Embedded Flash Technology and Beyond
Chun-Hung Lee, Shiuh-Sheng Yu, and Chia-Chi Chung (Etch Process Development Dept., Silicon Technology Lab., Macronix International Co., Ltd.)
127
Effect of Aspect Ratio on Topographic Dependent Charging in Oxide Etching (II)
Jun Matsui, K. Maeshige, and T. Makabe (Dept. of Electrical Engineering, Keio Univ.)
133
Effect of Contact Hole Size and CH3F/C4F8 Ratio on the Oxide-to-Nitride Selectivity in a Self-Aligned-Contact Etching Process
Sung-Chan Park, Kuk-Han Yoon, Jong-Sam Kim, Sang-Ik Kim, Jin-Woong Kim, and Hee-Koo Yoon (Memory R&D Division, Hyndai Electronics Industries Co. Ltd.)
139
Control of Electron Distribution Function and Radical Composition by Rare Gas Selection in Fluorocarbon Plasma
Tatsuo Ishijima, Masami Ikeda, Hikaru Kokura, and Hideo Sugai (Dept. of Electrical Engineering, Nagoya Univ.)
145
Challenge to 3mm Edge Exclusion: Contact Hole Tilting at Wafer Edge
Melody Chang, Jong Moon Kim, Takehiko Komatsu, Jingbao Liu, Bryan Pu, Ruiping Wang, and Hongching Shan (Applied Materials, Inc.)
151
Comparison of Self Aligned Contact Etching Employed by C4F8- and C5F8- Based Gas Mixture
Dong Goo Choi, Jung Seock Lee, Sang Soo Park, Jong Kook Kim, Jun Dong Kim, Bum-Jin Jun, Woon-Young Song, Bong Ho Kim, and Il Wook Kim (Memory Research & Development Division, Hyndai Electronics Industries Co., Ltd.)
157
Investigation of Deposition Species from Fluorocarbon Films by Ion Bombardment
Masakazu Hayashi, and Kazuhiro Karahashi (ULSI Fabrication Technology Lab., Fujitsu Laboratories Ltd.)
163
Polymer Deposition Management on a Dielectric Etch Chamber
Roger Lindley, Brad Mays, Melody Chang, Kaushik Vaidya, Hung Doa, Hamid Noorbakhsh, Bryan Pu, Claes Bjorkman, Zhifeng Sui, and Hongching Shan (Dielectric Etch Division, Applied Materials, Inc.)
169
Borderless Contact Etch Process on Advanced MERIE Etcher for 0.18 μm logic Technology
Pei-Hung Chu, and Chia-Chi Chung (Etch Process Development Dept., Silicon Technology Lab., Macronix International Co., Ltd.)
171
Heterogeneous Recombination of Atomic Chlorine, Bromine and Fluorine
Gowri P. Kota, J. W. Coburn, and David B. Graves (Dept. of Chemical Engineering, Univ. of California)
177
Determination of Concentrations and Temperature of Charged and Neutral Species in Plasmas
V. M. Donnelly, M. V. Malyshev, N. C. M. Fuller*, K. H. A. Bogart, and I. P. Herman* (Bell Lab., Lucent Technologies, *Columbia Univ.)
185
Highly Selective Removal of Residual Etch Products of Polysilicon Gate Etching in Anhydrous HF Gases
Mutumi Tuda, Kenji Shintani, Junji Tanimura, and Hiroaki Ootera (Advanced Technology R&D Center, Mitsubishi Electric Corp.)
193
Comparative Studies of PFC Alternative Gas Plasmas for Contact Hole Etch
Shingo Nakamura, Mitsushi Itano, Hirokazu Aoyama, Kentaro Shibahara*, Shin Yokoyama*, and Masataka Hirose** (Chemical Division, DAIKIN Industried, Ltd., *Research Center for Nanodevices and Systems, Hiroshima Univ., **Dept. of Electrical Engineering, Hiroshima Univ.)
199
Suppression of Plasma Potential Oscillation and Time-variation of Radical Density in Alternating Ion Bombardment Method
Keiji Nakamura, Masanori Ohwaki*, Hideo Sugai* (Dept. of Electrical Engineering, Chubu Univ., *Dept. of Electrical Engineering, Nagoya Univ.)
205
Reaction Processes on Silicon Surface Irradiated by Fluorocarbon Ion Beams
Hirotaka Toyoda, Hisayuki Morishima, Yasuaki Hori, and Hideo Sugai (Dept. of Electrical Engineering, Nagoya Univ.)
211
< DPS2000 Young Researcher Award Winner >
Variations of Fluorocarbon Radicals and Ionic Species Desorbed from Hot Metal Stage: Dependence on Temperature of Stage, Distance between Stage and Detection Point
Hyun-Ho Doh, Y. Tezuka, T. Ichiki*, and Y. Horiike (Dept. of Material Science, School of Eng., The Univ. of Tokyo, *Dept. of Electrical & Electronics Eng., Toyo Univ.)
217
Reduction of Device Damage in ICP Sources
Tsutomu Tanaka, Peter Loewenhardt, Alex Paterson*, John Yamartino*, John Helmsen*, Sibylle Frank*, Wada Zawalski*, Seayoul Park***, Yasushi Takakura***, Ken Lai, Michael Cox, Zhengquan Tan, Shawming Ma*, hongching Shan*, Claes Bjorkman*, Roger Lindley*, Ken Collins**, K. Huang*, and Yan Ye* (DCVD, Applied materials, *Etch, Applied Materials, **Core Technologies, Applied Materials, ***Applied Materials Japan)
223
Plasma Free Dry Etching of Crystalline Silicon Using Atomic Hydrogen Generated by Hot Catalyzer
Kenji Uchida, Shingi Hashioka, Akira Izumi, and Hideki Matsumura (School of Material Science, Japan Advanced Institute of Science and Technology (JAIST))
231
High Density Plasma Etching of Low k Dielectric Polymers in Oxygen-Based Chemistries
D. Fuard*, O. Joubert*, L. Vallier*, R.-L. Inglebert*, G. Cunge*, M. Assous**, P. Berruyer**, and R. Blanc*** (*LTM/CNRS, **CEA-LETI (DMEL), ***ST Microelectronics)
237
Integration of Low k IMD(Inter Metal Dielectrics) Using SACVD(Sub Atmospheric CVD) and It's Evaluation for Dry Etching and in-situ Ashing in MERIE(Magnetic Enhanced Reactive Ion Etcher)
Yun Sang Kim, Huongh Nguyen, Mahmoud Dahimene, Claes Bjorkman, and Hongquing Shan (Applied Materials)
245
Fundamental Property of Organic SOG Etching by Using UHF-ECR Plasma
Seiji Yamamoto, Ken'etsu Yokogawa, Masaru Izawa, Tsuyoshi Yoshida*, Atsushi Maekawa**, Michikazu Morimoto***, Hironobu Kawahara***, Kazunori Tsujimoto, and Shin'ichi Tachi (Central Research Lab., Hitachi Ltd., *Hitachi Techno Engineering Co., Ltd., **Hitachi ULSI Systems LTd., ***Kasado Semiconductor Equipment Product Division, Hitachi Ltd.)
251
RIE-Lag-Less Etching CH4/N2 Plasma for Organic Low-k Dielectic
Hideo Nakagawa, Yasuhiro Morikawa*, Eiji Tamaoka, and Toshio Hayashi* (ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., *Institute for Semiconductor Technologies, ULVAC Japan Ltd.)
257
Organic Low-k Etching Process in Low Pressure and High Density NLD Plasma
Yasuhiro Morikawa, Shinji Yasunami, Wei Chen, Toshio Hayashi, and Tajiro Uchida (Institute for Semiconductor Technologies, ULVAC Japan Ltd.)
263
< DPS2000 Young Researcher Award Winner >
Etching of Organic Low-k Film in High-Density Plasma Employng N-H Gases and Its Radical Reaction Mechanism
Hisao Nagai, S. Takashima, T. Tanaka, K. Teii, M. Hiramatsu*, M. Hori, and T. Goto (Nagoya Univ., *Meijo Univ.)
269
Side-Wall Protection Effects During Via Hole Etching of Organic SOG Films
Toyokazu Sakata, Shogo Komagata, Shuichi Noda, Naokatsu Ikegami, Motoki Kobayashi, and Jun Kanamori (Advanced VLSI Research Center, Oki Electric Industry Co. Ltd.)
275