Porous Low-k/Copper Integration

Takeshi Nogami, Shingo Takahashi*, Kaori Tai*, Hiizu Ohtorii*, Naoki Kornai*, Hiroshi Horikoshi*, Shuzo Sato*, and Zenya Yasuda* (IBM Microelectronics Center, *Advanced Process R&D Lab., LSI Technology Development, Semiconductor Network Company, Sony Corp.)

1

Effect of Film Composition on SiOCH Etching

T. Tatsumi, K. Nagahata, K. Urata*, T. Saito, M. Minami, Y. Nogami*, S. Iseda*, and Y. Morita (Technology Development Group, SNC, Sony Corp., *Process Engineering Dept., Sony Computer Entertainment Inc.)

9

Study of Ashing Technology for 90 nm and below Low-k/Cu Damascene Interconnect

Hidetaka Nambu, Atsushi Nishizawa, Eiichi Soda, Takuya Maruyama, and Ken Tokashiki (ULSI Device Development Div., NEC Electron Devices, NEC Corp.)

15

Investigation of Ashing Damage to Ultra-low-k Dielectric Material

Kazumasa Yonekura, Shigenori Sakamori, Kinya Goto, Masazumi Matsuura, Nobuo Fujiwara, and Masahiro Yoneda (ULSI Development Center, Mitsubishi Electric Corp.)

21

Dual Damascene Scheme and Ech/Ash Damage of Porous MSQ

Li-Hung Chen, Satohiko Hoshino, Takashi Hayakawa, Kaoru Maekawa*, and Kouichiro Inazawa (Tokyo Electron AT Ltd., *Tokyo Electron Ltd.)

27

Nanoscale Etching Characteristics of Porous Silica (k < 2.0) in the NLD Plasma

Yasuhiro Morikawa, Toshio Hayashi, Kouichi Tamagawa, Toshiyuki Nakamura, Koukou Suu, Hiroyuki Yamakawa, and Taijiro Uchida (Institute for Semiconductor Technologies, ULVAC Inc.)

33

Using Real-time Infrared Spectroscopy and In-vacuo Electron-Spin-Resonance Technique in the Analysis of Surface Reactions during Etching of Organic Low-k Film by a Plasma of N₂ and H₂

Kenji Ishikawa, Yoshikazu Yamaoka, Akihiro Egami, Kazuaki Kurihara, Moritaka Nakamura, Satoshi Yamasaki*, Tetsuji Yasuda*, and Junichi Isoya** (Association of Super-advanced Electronics Technology (ASET), *Advanced Semiconductor Research Center (ASRC), AIST, **Univ. of Library and Information Science)

39

Behaviors of Si, SiF, SiF₂ Radicals and SiF₄ Molecule in RF 60 MHz Capacitively Coupled SiF₄ Plasma

Takayuki Ohta, Tetsuro Ishida, Masaru Hori, Toshio Goto, Masafumi Ito*, Satoshi Kawakami**, and Nobuo Ishii*** (Dept. of Quantum Engineering, Graduate School of Engineering, Nagoya Univ., *Dept. of Opto-Mechatronics Faculty of Systems Engineering, Wakayama Univ., **Tokyo Electron Tohoku Co., Ltd., ***Central Research Lab., Tokyo Electron Co., Ltd.)

45

Detection of Oxygen Atom Density in Inductively Coupled Plasma by Vacuum Ultraviolet Absorption Spectroscopy

Hisao Nagai, Mineo Hiramatsu*, Masaru Hori, and Toshio Goto (Dept. of Quantum Engineering, Nagoya Univ., *Dept. of Electrical and Electronic Engineering, Meijo Univ.)

51

Effect of Pulse-Time-Modulated Plasma for Reduction of Plasma Radiation Damage in SiO₂

Yasushi Ishikawa*, Mitsuru Okigawa*,**, and Seiji Samukawa* (*Institute of Fluid Science, Tohoku Univ., **System LSI Div., CCD Development, Sanyo Electric Co., Ltd., Semiconductor Company)

57

Micromachined Inductively Coupled Plasma Generators: Applications and Scaling Laws

Jeffrey A. Hopwood (Electrical and Computer Engineering, Dana Research Center, Northeastern Univ.)

63

A Novel Microplasma Process for Localized and Ultrahigh-Rate Etching of Silicon Wafers

Takanori Ichiki, Ryo Taura, and Yasuhiro Horiike* (Dept. of Electric and Electronics Engineering, Toyo Univ., *Dept. of Materials Science, School of Engineering, The Univ. of Tokyo)

69

Generation of Integrated Atmospheric Microplasmas

Kazutake Taniguchi, Takayuki Fukasawa, Hiroyuki Yoshiki*, and Yasuhiro Horiike (School of Engineering, The Univ. of Tokyo, *Tsuruoka Natl. College of Tech.)

75

Suppression of Film Deposition onto Power-Coupled Dielectric Window in Inductively-Coupled Plasmas

Keiji Nakamura, Hajime Suzuki, Koji Kaga*, and Toshio Hayashi* (Dept. of Electrical Engineering, College of Engineering, Chubu Univ., *Institute for Semiconductor Technologies, ULVAC Inc.)

81

A Novel Plasma Etching Tool "EMCP" - With a Function for Controlling Chamber Surface Reactions - for Non-Volatile Materials

M. Edamura, K. Yoshioka*, R. Nishio*, S. Kanai*, T. Kanekiyo*, S. Kanno, N. Mise, A. Doi, and H. Kazumi** (Mechanical Engineering Research Lab., Hitachi Ltd., *Kasado Div., Hitachi High-Technologies Corp., **Hitachi Research Lab., Hitachi Ltd.)

87

Gate Patterning for Ultimate CMOS Device

L. Vallier, J. Foucher, E. Pargon, X. Detter, G. Cunge, O. Joubert, X. Songlin*, T. Lill*, and D. Podlesnik* (Lab. des Technologies de la Microelectronique, CNRS, *Silicon Etch Div., Applied Materials)

93

Residue on Ultra-thin Gate Oxide Exposed to Cl₂/O₂ ECR Plasma during Poly-Si Etching

Suguru Tabara (VLSI Operations Div., ROHM Co., Ltd.)

101

Nanometer-scale Linewidth Control of Polysilicon Gates during Overetch in HBr/O₂ Plasmas

Kenji Shintani, Mutumi Tuda, Hiroaki Sumitani, Takahiro Maruyama*, and Hiroshi Miyatake* (Advanced Technology R&D Center, Mitsubishi Electric Corp., *ULSI Development Center, Mitsubishi Electric Corp.)

107

Plasma-Enhanced Particle-Remover using Viscous Friction of Gas Flow

Yoshinori Momonoi, Kenetsu Yokogawa, and Masaru Izawa (Central Research Lab., Hitachi Ltd.)

113

Multi-Layered SiOCH Films with Low Dielectric Constant Fabricated Employing Layer-by-Layer Process of Plasma Enhanced Chemical Vapor Deposition and Oxidation

Masaru Hori, Hisao Nagai, Mineo Hiramatsu*, Toshiaki Fujii*, and Toshio Goto (Dept. of Quantum Engineering, Nagoya Univ., *Dept. of Electrical and Electronic Engineering, Meijo Univ.)

119

Complete Dry Plasma Process Sequence for Wafer Cleaning and Manufacturing of SiGe Virtual Substrates

T. Buschbaum, H. M. Buschbeck, A. Erhart, Y. Goeggel, C. Rosenblad, S. Wiltsche, J. Ramm, A. Dommann*, and M. Kummer* (Unaxis Semiconductors, *Interstate Univ. of Applied Science)

125

Measurement of Negative Ion Density in a Plasma by DC Laser Photodetachment Method

H. Takahashi, T. Kasuya, and M. Wada (Doshisha Univ.)

131

Microwave Electric Field Measurement by a Thermal Probe in Surface Wave Plasma

Eugen Stamate and Hideo Sugai (Dept. of Electrical Engineering, Nagoya Univ.)

137

Application of an Equipment Fault Detection System using an Optical Sensor to Mass-Production Equipment

Yutaka Kadogawa, Toshinori Tsuji*, and Shunji Hayashi (LSI Process Engineering Dept., Miyazaki Oki Electric Co., Ltd., *Faculty of Humanities, Miyazaki Municipal Univ.)

143

Measurement of Electron Energy Distribution Function by a Compact Electrostatic Deflection Type Energy Analyzer

Ryosuke Imai, Akira Nakajo, Hidemoto Hiramatsu, Taisuke Nishimori, Toshiro Kasuya, and Motoi Wada (Dept. of Electronics, Doshisha Univ.)

149

Surface Nitriding of a Tool Steel by Electron Beam Excited Plasma

Hiroaki Shoyama, Yoshinori Dake*, Takashi Mori*, Hisao Nagai**, Masaru Hori**, Toshio Goto**, and Tamio Hara (Faculty of Engineering, Toyota Technological Institute, *Technical Institute, Kawasaki Heavy Industry, **Dept. of Quantum Engineering, Nagoya Univ.)

155

Industrial Applications of TiO₂ and TiN Films Deposited by EBEP

Halida Homyara, Shunjiro Ikezawa, Masayoshi Umeno, Kazuki Yoshimura*, Hiroshi Taoda*, and Tamio Hara** (Dept. of Electrical Engineering, Chubu Univ., *National Institute of Advanced Industrial Science and Technology, **Toyota Technological Institute)

159

Negative Charge Injection to a Positively Charged SiO₂ Hole Exposed to Plasma Etching of a Pulsed Two-Frequency Capacitively Coupled Plasma in CF₄/Ar

T. Ohmori, T. K. Goto, T. Kitajima, and T. Makabe (School of Integrated Design Engineering, Faculty of Science and Technology, Keio Univ.)

165

Energy Distributions of Positive and Negative Ions Incident on a Wafer in a Two-Frequency Capacitively Coupled Plasma in CF₄/Ar for SiO₂ Etching

T. Yagisawa, K. Maeshige, and T. Makabe (School of Integrated Design Engineering, Faculty of Science and Technology, Keio Univ.)

171

Profile Simulation Model for Nanometer-Scale Control of Critical Dimensions and Etched Profiles

Atsushi Sano, Kouichi Ono, Kazuo Takahashi, and Yuichi Setsuhara (Dept. of Aeronautics and Astronautics, Grad. School of Eng., Kyoto Univ.)

177

Application of PML Absorbing Boundary Conditions for Propagation of Surface Wave on The Long Plasma Cable

Shamim Ahmad, Kiyohide Baba, Keiji Nakamura, Masayoshi Umeno, and Shunjiro Ikezawa (Dept. of Electrical Engineering, Chubu Univ.)

183

Interatomic Potentials for MD Simulation of Polymer Etching by N₂/H₂ and NH₃ Plasma

Hideaki Yamada and Satoshi Hamaguchi (Dept. of Fundamental Energy Science, Kyoto Univ.)

189

A New RIE using 100 MHz rf CCP for Etching Organic Film

Hisataka Hayashi, Itsuko Sakai, Akihiro Kojima, Junya Nishiwaki, Eiichiro Shinomiya, and Tokuhisa Ohiwa (Process & Manufacturing Engineering Center, Toshiba Corp. Semiconductor Company)

195

Highly Selective Etching of SiO₂ to Si using PFC-free Gas Chemistry

Takayuki Sakai and Tokuhisa Ohiwa (Process & Manufacturing Engineering Center, Toshiba Corp. Semiconductor Company)

201

Highly Reliable and Polymer-Free Via Etch Process

K.-K. Chi, S.-W. Yeo, B.-Y. Nam, C.-J. Kang, W.-S. Han, and J.-T. Moon (Process Development Team, Samsung Electronics Co., Ltd.)

207

Study of Plasma Induced Damage on low-k Film with PR Strip and Stopper Etch Processing

Yoshio Ishikawa, Katsuhiko Kugimiya, Hiroya Tanaka, Keiji Horioka, Takashi Shimizu*, Kenji Kurihara*, Naoki Oka*, and Michio Aruga* (Etch Div., Narita Application Lab., Applied Materials Japan, Inc., *DSM Div., Narita Application Lab., Applied Materials Japan, Inc.)

211

Over 10 μm/minute GaAs Backside Via Etch and Defect Control under New Process Regime using Cl₂-based Gas Chemistry

Young Kyu Cho, Mark Rousey-Seidel, Paul Werbaneth, Les Jerde, and Duck Chool Lee* (Tegal Corp., *Dept. of Electrical Engineering, Inha Univ.)

217

Anisotropic Deposition of Copper by Plasma CVD Method

Kosuke Takenaka, Masao Onishi, Manabu Takeshita, Toshio Kinoshita, Kazunori Koga, Masaharu Shiratani, and Yukio Watanabe (Graduate School of Information Science and Electrical Engineering, Kyushu Univ.)

221

Preparation and Characterization of Monodisperse Lead Zirconate Titanate Nanoparticles

Takahiro Katagiri*,**, Takeshi Miyagawa*,**, Yoshimichi Ohki*,**, Kwang Soo Seol**, and Kazuo Takeuchi** (*Dept. of Electrical, Electronics, and Computer Engineering, Waseda Univ., **RIKEN)

227

Development of cw Non-Equilibrium Microwave-Excited Atmospheric Discharge System and its Application to Carbon Nanostructure Fabrication

Mikio Nagai, Akio Matsushita, Koji Yamakawa, Mineo Hiramatsu*, Masaru Hori, and Toshio Goto (Dept. of Quantum Engineering, Graduate School of Engineering, Nagoya Univ., *Dept. of Electrical and Electrical Engineering, Meijo Univ.)

233

Plasma Etching of Ferroelectric Materials at High Wafer Temperatures

S. Marks and L. G. Jerde (Tegal Corp.)

239

Decomposition Mechanism of c-C₄F₈ in Plasma Assisted Catalytic Technology (PACT)

Akihiro Egami, Yuji Hayashi, Toshio Kikuchi, Kenji Ishikawa, and Moritaka Nakamura (Environmentally benign Etching Technology Lab. (EEL), ASET)

243

Global Warming Gas Emission during Remote Plasma Cleaning of Silicon Nitride using C₄F₈O/O₂ with N₂O and NO Additive Gases

C. H. Oh, J. H. Kim, G. Y. Yeom, N.-E. Lee, S. S. Yoon*, and T. K. Kwon* (Dept. of Materials Engineering, Sungkyunkwan Univ., *Jusung Engineering)

249

Requirements for Dry Process of 100 nm node CMOS Integration

Shinji Sugatani, Mutsuaki Kai*, Tsutomu Hosoda*, Takashi Saiki, and Satoshi Otsuka (LSI Integration Dept., C-Project Group, Fujitsu Laboratories, Ltd., *Device Dept., Advanced LSI Development Div., Fujitsu, Ltd.)

255

Deep Dry Etching of Quartz Plate Over 100 mm Depth Employing Ultra-Thick Photoresist (SU-8)

Takayuki Fukasawa and Yasuhiro Horiike (School of Engineering, The Univ. of Tokyo)

263

Study of SiO₂ Plasma Etching and Fluorocarbon Film Deposition with Mass Separated CFx⁺ Ion Beam Irradiation

K. Yanai, K. Ishikawa, K. Karahashi, H. Tsuboi, K. Kurihara, and M. Nakamura (Environmentally benign Etching Technology Lab. (EEL), ASET)

269

Etching Characteristics Inside Ultra-Small Pinholes at Contact Hole Bottoms Opened onto the Co-silicided SOI

Kousuke Hara, Akira Takahashi, Naokatsu Ikegami, Motoki Kobayashi, Yoshiki Nagatomo, and Jun Kanamori (System LSI Research Div., Silicon Solutions Company, Oki Electric Industry Co., Ltd.)

275

On-Wafer Monitoring for Conductivity of Sidewall in SiO₂ Contact Holes

S. Soda, T. Shinmura, M. Koyanagi*, K. Hane*, and S. Samukawa (Institute of Fluid Science, Touhoku Univ., *School of Engineering, Touhoku Univ.)

281

Interaction of Ionic and Neutral Fluorocarbon Radical Beam with Si and SiO₂ Surfaces

Hirotaka Toyoda, Isao Murakami, and Hideo Sugai (Dept. of Electrical Engineering, Nagoya Univ.)

287

Highly Selective and High Rate SiO₂ Etching Using Argon-added C₂F₄/CF₃I Plasma

H. Ohtake*,**, H. Ishihara***, T. Fuse***, A. Koshiishi***, and S. Samukawa* (*Tohoku Univ., **NEC Corp., ***Tokyo Electron AT Ltd.)

293