November 13-14, 2003

Development of Biochips Employing Micro/nano-fabrication Technologies

Yasuhiro Horiike (Biomaterials Research Center, National Institute of Materials Science)

1

Etch, Ash, and Cleans Challenges for Porous Low-k Dielectrics

P. Josh Wolf*,***, Brain White*,**, J. H. Shin*,****, and Ricky McGowan*,***** (*International SEMATECH, **Advanced Micro Devices, ***Intel, ****Hynix Corp., *****Motorola Corp.)

9

Dual Frequency Superimposed (DFS) rf Capacitive Coupled Plasma Etch Process

A. Kojima, H. Hayashi, I. Sakai, J. Nishiwaki, A. Takase, M. Ohmura, T. Matsushita, E. Shinomiya, T. Ohiwa, J. Yashiro*, S. Himori*, and K. Nagaseki* (Process & Manufacturing Engineering Center, Toshiba Corp. Semiconductor Company, *Etch Systems B. U., Tokyo Electron AT Ltd.)

13

Low damage damascene formation using inorganic porous low-k material

Kazumasa Yonekura, Kinya Goto, Masazumi Matsuura, Nobuo Fujiwara, and Kazunori Tsujimoto (Wafer Process Engineering Development Div., Renesas Technology Corp.)

19

Memory effects for multi-step in situ plasma processing

Eric A. Hudson, Rao Annapragada, Douglas Keil, Jie Zhou, and Kenji Takeshita (Lam Research Corp.)

25

Prediction of radial variation of plasma structures and ion distributions in a wafer interface in 2f-CCP for SiO2 etching

T. Yagisawa, T. Shimada, and T. Makabe (School of Integrated Design Engineering, Faculty of Science and Technology, Keio Univ.)

31

Energy Control of Ions Incident to Wafer by using Active Bias

N. Yasui, M. Sumiya, H. Tamura, and S. Watanabe (R&D Center, Kasado Administrative Div., Power & Industrial Systems, Hitachi, Ltd.)

37

Energy Control of Incident Ions to the Chamber-Wall by using Push-Pull Bias (Phase-Controlled Bias) in UHF-ECR Etcher

Masahiro Sumiya, Naoki Yasui, Kenetsu Yokogawa*, Nobuyuki Negishi*, Masatoshi Oyama**, Tsuyoshi Yoshida**, Hironobu Kawahara**, and Seiichi Watanabe (R&D Center, Kasado Administrative Div., Power & Industrial Systems, Hitachi, Ltd., *Central Research Lab., Hitachi, Ltd., **Hitachi High-Technologies Corp.)

43

Molecular Dynamics Simulation of Organic Polymer Etching

Hideaki Yamada, Satoshi Hamaguchi (Dept. of Fundamental Energy Science, Graduate School of Energy Science, Kyoto Univ.)

49

Study of Organic Polymer Thin Film Etching by Plasma Beam Irradiation

Akihiro Egami, Kazuaki Kurihara, Teruo Yagishita, Yoshikazu Yamaoka, Moritaka Nakamura, Tetsushi Kawachi*, Shuhei Seki*, and Seiichi Tagawa* (Environmentally benign Etching Technology Lab.(EEL), ASET, *Nanoscience and Nanotechnology Center, ISIR, Osaka Univ.)

55

Plasma diagnostics for low-k material deposition by monomer-vapor polymerization technique

Keizo Kinoshita, Akinori Nakano, Jun Kawahara, Nobutaka Kunimi, Naoaki Saito*, Yoshihiro Hayashi, and Takamaro Kikkawa**,*** (MIRAI, ASET, *Energy Electronics Institute, AIST, **MIRAI, ASRC, AIST, ***Research Center for Nanodevices and Systems, Hiroshima Univ.)

61

Stabilization of fluorine in SiOF films deposited by high-density plasma process

Tatsuya Fujii, Koyu Asai, Mahito Sawada, Koichi Sakurai, Kiyoteru Kobayashi, and Masahiro Yoneda (Wafer Process Engineering Development Div., Renesas Technology Corp.)

67

Improved thermal stability of HfO2 films by atomic layer modification process

S. Q. Xiao, Y. Sugita, Y. Morisaki, T. Nakamura, K. Irino, and T. Ohba (Device Development Dept., Akiruno Techno. Center, Fujitsu Ltd.)

73

Estimation of the energy band profile of hafnium silicates by x-ray photoelectron spectroscopy

Toshihide Ito*, Hiromitsu Kato*,**, Motohiro Maeda*, Kazuhiko Nakamura*, and Yoshimichi Ohki* (*Waseda Univ., **AIST)

79

Surface Passivation of GaAs by S- and F-containing Polymer Nanofilms from Plasma Deposition and RF Magnetron Sputtering of a Fluoropolymer Target

E. T. Kang and K. G. Neoh (Dept. of Chemical and Environmental Engineering, National Univ. of Singapore)

85

Patterning Challenges with Thin Resists

A. P. Mahorowala, D. L. Goldfarb, K. Temple, K. E. Petrillo, D. Pfeiffer, K. Babich, M. Angelopoulos, G. Gallatin, S. Rasgon*, H. H. Sawin*, S. D. Allen**, R. N. Lang**, M. C. Lawson**, R. W. Kwong**, K.-J. Chen**, W. Li**, M. Khojasteh**, P. R. Varanasi**, M. I. Sanchez***, H. Ito***, G. M. Wallraff***, and R. D Allen*** (IBM T. J. Watson Research Center, *MIT Dept. of Chemical Engineering, **IBM Microelectronics, ***IBM Almaden Research Center)

89

Gate width optimization during etch by advanced process control based on optical critical dimension measurement

Jorge Luque, Gowri P. Kota, and Vahid Vahedi (Lam Research Corp.)

99

Roughness Variations on Gate Dielectric Surfaces through Metal Gate Etching in Inductively Coupled Cl2/HBr Plasma

Nobuhisa Yamagishi, Kazuhiro Karahashi, Jung-Woo Park, Noriyuki Miyata*, Hirokazu Hisamatsu, Nobuyuki Mise, Toshihide Nabatame, Tsuyoshi Horikawa*, and Akira Toriumi*,** (MIRAI, ASET, *MIRAI, ASRC, AIST, **Dept. of Materials, Science School of Engineering, The Univ. of Tokyo)

105

Center to Edge Uniformity Control to Meet the Challenges of Sub 65 nm Advanced Si Etch

C. Lee, Y. Yamaguchi, F. Lin, K. Aoyama*, Y. Miyamoto*, and V. Vahedi (Lam Research Corp., *Lam Research Japan)

111

DNA Nanotechnology Toward Nano-Electronics

Hidekazu Tanaka and Tomoji Kawai (The Institute and Scientific and Industrial Research, Osaka Univ.)

115

Dry etching of Ni-based alloy films and its application to the fabrication of molecular affinity separation devices using magnetic beads

Naoaki Ichikawa*, Fumihiro Omasu**, Yukio Nagasaki***, and Takanori Ichiki*,** (*Dept. of Electric and Electronics Engineering, Toyo Univ., **PRESTO, Japan Science and Technology Agency, ***Dept. of Materials Science and Technology, Tokyo Univ. of Science)

121

Low-damage Processes for Low-k Film using Advanced Neutral Beams

N. Inoue, H. Ohtake, T. Ozaki, E. Soda*, K. Inukai*, and S. Samukawa (Tohoku University, *Semiconductor Leading Edge Technologies, Inc.)

127

Silicon-Oxide Etching Process Employing Pulse-modulated Electron-Beam Excited Plasma

Keigo Takeda, Yutaka Tomekawa, Masahiro Iwawaki, Masafumi Ito, Sohichi Ikuma*, Koji Yamakawa*, Masaru Hori*, and Toshio Goto* (Faculty of Systems Eng., Wakayama Univ., *Dept. of Quantum Eng., Nagoya Univ.)

133

Characteristics of Si Trench Etching using HBr/SF6/O2 Plasma

Setsuko Wakimoto, Hiroyuki Tanaka*, Ayako Yajima, Kunio Mochizuki, Yukimi Ichikawa*, Shosaku Matsumura**, and Yoshihiko Nagayasu (Fuji Electric Advanced Technology Co., Ltd., *Fuji Electric Device Technology Co., Ltd., **Faculty of Engineering, Musashi Institute of Technology)

139

Low Damage Ashing for CVD-SiOC Film by using H2O Plasma

Michinari Yamanaka, Hiroshi Yuasa, Toshihiro Otsuka, and Shigenori Sakamori* (ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., *Wafer Process Engineering Development Div., Renesas Technology Corp.)

145

Optimization of Antenna-Plasma Coupling System for Large-Area Microwave Plasma Production

Tatsuo Ishijima, K. Takasu, M. Liu, and H. Sugai (Dept. of Electrical Engineering, Nagoya Univ.)

151

Novel Plasma Sensor for Detecting Abnormal Density Variations in Reactors for Mass-Production

Keiji Nakamura, Akira Kawai*, and Hideo Sugai* (Dept of Electrical Engineering, College of Engineering, Chubu Univ., *Dept. of Electrical Engineering, Graduate School of Engineering, Nagoya Univ.)

157

Nonuniform ion bombardment on substrate caused by ion focusing effect

E. Stamate and H. Sugai (Dept. of Electrical Engineering, Nagoya Univ.)

163

Etching of Ta films using Ar/Cl2 inductively coupled plasma

Y. S. Lee, S. W. Na, S. G. Song, Y. M. Kim, N.-E. Lee, and J. H. Ahn* (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan Univ., *School of Material Science and Engineering, Hanyang Univ.)

167

Adhesion properties of Cu/Cr films on polyimide substrate treated by dielectric barrier discharge (DBD) plasma

S. H. Kim, S. H. Cho, N.-E. Lee, H. M. Kim*, Y. W. Nam**, and Y. H. Kim*** (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan Univ., *Dept. of Mechanical Engineering and Intelligent Micro-System, Sungkyunkwan Univ., **Samsung Advanced Institute of Technology, ***School of Materials Science and Engineering, Hanyang Univ.)

173

A study on the improvement of metal defect on optimizing the aluminum metal structure in the memory device

Dae-Hyun Jang, Jae-Sung Hwang, Jae-Woo Kim, Sang-Sup Jeong, Yong-Sun Ko, Chang-Yong Song (Samsung Electronics Co., Ltd.)

179

Enlargement of Process Window for All-in-One Integrated Etch Process

Heeyeop Chae, Jang Gyoo Yang, Daniel Hoffman, Allen Zhao, and Yan Ye (Etch Products Business Group, Applied Materials, Inc.)

185

Minimizing Plasma-Process-Induced Charging Damage During Wafer Dechucking in Dielectric Etchers using the Contact-Potential-Difference Technique

Michael C. Kutney, Shawming Ma, and Yan Ye (Dielectric Etch Div., Applied Materials, Inc.)

191

High Source Power Dual Damascene Trench Etch Process Development using an Advanced Dielectric Etch Tool

Kallol Bera, Gerardo Delgadino, Allen Zhao, and Yan Ye (Applied Materials, Inc.)

197

Lattice deformation in Si surface exposed to Ar plasma revealed by spectroscopic ellipsometry and grazing x-ray diffraction

T. Yamada, K. Mizuno*, N. Harada, K. Kitahara, and A. Moritani (Dept. of Electronic and Control Systems Engineering, Shimane Univ., *Dept. of Material Science, Shimane Univ.)

203

Power dissipation characteristics of the dual frequency Capacitively Coupled Plasma (CCP) and gas mixing effect in Inductively Coupled Plasma (ICP) for electron temperature control

Buil Jeon, D. S. Lee, K. H. Bai, and H. Y. Chang (Dept. of Physics, KAIST)

209

Mechanism of Increasing PR Selectivity in 90nm Nitride Hard Mask Etching

J. W. Shon, N. Webb, D. S. Jun, Y. J. Chung*, Y. S. Chae*, Y. J. Kim*, J. W. Sun*, K. J. Min*, C. J. Kang*, and J. K. Lee** (Lam Research Corp., *Semiconductor R&D Center, Samsung Electronics Co., Ltd., **Pohang Univ. of Science and Technology)

211

Etching Characteristics of Porous MSQ in Large Diameter NLD Plasma

Yasuhiro Morikawa, Toshio Hayashi, Koukou Suu, and Michio Ishikawa (Institute for Semiconductor Technologies, ULVAC Inc.)

215

Optimization of Gate Structure and Etching Flow for Advanced Logic

Takahiro Maruyama, Shinichi Yamanari, Nobuo Fujiwara, Kazunori Tsujimoto, and Michinari Yamanaka* (Wafer Process Engineering Development Div., Renesas Technology Corp., *ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

221

Measurements of the Impedance of Electron Cyclotron Resonance Plasmas using a Network Analyzer

Mutumi Tuda, Masakazu Taki, Keisuke Nakamura, Kenji Shintani, Yousuke Inoue*, and Hiroaki Sumitani (Advanced Technology R&D Center, Mitsubishi Electric Corp., *Wafer Production Engineering Div., Renesas Technology Corp.)

225

Residual Stress in Cu Films Deposited by H-assisted Plasma CVD using Cu(EDMDD)2

Kosuke Takenaka, Manabu Takeshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, and Toshiya Shingen* (Graduate School of Information Science and Electrical Engineering, Kyushu Univ., *Asahi Denka Kogyo K.K.)

231

Investigation of plasma condition with consumed inner parts in SiO2 etching

Masakazu Hayashi and Makoto Kosugi (Device Technology Lab., Silicon Technology Lab., Fujitsu Laboratories Ltd.)

237

Advanced Gate Process Control by Integrated Optical Scatterometry

David S. L. Mui, Hiroki Sasano, Wei Liu, Thorsten Lill, and Dragan Podlesnik (Conductor Etch Div., Applied Materials)

243

Performance of Inductively Coupled Fluorocarbon Plasmas in Etching of HfO2 Thin Films as a High-k Gate Insulating Material

Kazuo Takahashi, Kouichi Ono, and Yuichi Setsuhara (Dept. of Aeronautics and Astronautics, Kyoto Univ.)

247

Control of Line Edge Roughness for Etching with 193 nm Photoresist

Eric A. Hudson, Zhenxi Dai, Zongyu Li, Sean Kang, Sangheon Lee, Wan-Lin Chen, and Reza Sadjadi (Lam Research Corp.)

253

Observation of SiO2 Surface Irradiated by Fluorocarbon Neutrals and Energetic Ion Beam

Hirotaka Toyoda, Noriharu Takada, and Hideo Sugai (Dept. of Electrical Engineering, Nagoya Univ.)

259

Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO2 etching

Y. Suzuki, T. Shinmura, M. Koyanagi*, K. Hane*, and S. Samukawa (Institute of Fluid Science, Tohoku Univ., *School of Engineering, Tohoku Univ.)

265

Incident Angular Dependence of SiO2 and SiN Etching with Mass-analyzed CFx+ Ion Beam Irradiation

K. Yanai, K. Karahashi, K. Ishikawa, and M. Nakamura (Environmentally benign Etching Technology Lab. (EEL), ASET)

271

< DPS2003 Young Researcher Award Winner >

A New Etching of SiO2 with Ultrahigh Rate and Selectivity using Microwave Excited Non-equilibrium Atmospheric Pressure Plasma

Koji Yamakawa, Masaru Hori, Toshio Goto, Shyoji Den*, Toshiro Katagiri*, and Hiroyuki Kano** (Nagoya Univ., *Katagiri Engineering Co., Ltd., **NU-EcoEngineering Co., Ltd.)

277

Mechanism of Striation Control in 90 nm SAC processes using Xenon process

J. W. Shon, D. S. Jun, D. O. Shin, J. W. Sun*, ""S. Y. Son*, Y. J. Chung*, Y. S. Chae*, Y. J. Kin*, K. J. Min*, C. J. Kang*, H. Y. Chang**, and J. K. Lee*** (Lam Research Corp., *Semiconductor R&D Center, Samsung Electronics Co., Ltd., **Korea Advanced Institute of Science and Technology, ***Pohang Univ. of Science and Technology)

283

< DPS2003 Young Researcher Award Winner >

Improvement of Dielectric Etching Process for ArF Resist

N. Negishi, H. Takesue*, M. Sumiya**, T. Yoshida*, and M. Izawa (Central Research Lab., Hitachi Ltd., *Hitachi High-Technologies Corp., **Kasado R&D Center, Hitachi Ltd.,)

287