Transfer of Line Edge Roughness during Gate Patterning processes

L. H. A. Leunissen, M. Ercken, M. Goethals, S. Locorotondo, K. Ronse, G. B. Derksen*, D. Nijkerk*, and G. F. Lorusso** (IMEC, *TNO, **KLA-Tencor Corp.)

1

Reduction Technique of Line-Edge Roughness Independent of CD Shift in Gate-Etching Process

Masaru Kurihara and Masaru Izawa (Central Research Lab., Hitachi, Ltd.)

7

Control of Surface Morphology and Etch Selectivity Using Fluorocarbon Film during Dry Etching

Y. S. Chae, H. W. Choi, J. W. Sun, J. Hong, C. H. Shin, G. J. Min, C. J. Kang, H. K. Cho, and J. T. Moon (Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

13

Striation Free Technology for 193nm Photoresist

Chin Ning Wu, Chung Ju Lee, W. T. Shiau, Kuan Liao, S. W. Sun, A. J. Kelly*, G. Vinogradov*, T. Tsukada*, and K. Kawabata* (Central Research and Development Div., United Microelectronics Corp., *Research and Development Div., FOI Corp.)

19

Plasma-induced 193-nm Resist Deformation: Problems and a Possible Solution

H. Struyf, Q. T. Le, T. Dupont, W. Boullart, and S. Vanhaelemeersch (IMEC)

23

Minimizing Plasma Damage of CVD Low-k Materials by Tuning a Two Step Etch Sequence

J. Van Aelst, H. Struyf, Q. T. Le, W. Boullart, S. Vanhaelemeersch, and M. R. Baklanov (IMEC)

29

Atomic-scale Simulation of Passivation Layer Formation during Organic Polymer Plasma Etching

Hideaki Yamada*,*** and Satoshi Hamaguchi** (*Graduate School of Energy Science, Kyoto Univ.,**Graduate School of Engineering, Osaka Univ., ***AIST)

35

Impedance and Etch Characterization of NF₃/Ar/He Etching of Damascene SiC Etch-Stop Layer

Magdy Abdelrahman and Makarem Hussein (Portland Technology Development, Intel Corp.)

41

Beam Study on Mechanism of Carbon-Monoxide Assisted Nickel Etching

Hirotaka Toyoda, Yoshinori Kinoshita, and Hideo Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.)

47

Investigation of Plasma Nitridation of Silicon and its Chemistry for GaN Growth

Tatsuo Ishijima, Takahiro Okada, Yoshio Honda, and Hideo Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.)

51

Observation of High Energy Particles Incident on Substrate in Magnetron Sputter Deposition

Yohei Sakashita, Hirotaka Toyoda, Yusuke Takagi, J. S. Gao, K. Sasaki, S. Iwata, K. Kato, and Hideo Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.)

55

Observation of Direct SiO₂ Etching by Fluorocarbon Molecules with Argon Ion Bombardment

Noriharu Takada, Hirotaka Toyoda, and Hideo Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.)

59

Influence of Dielectric Window Material and Pumping Speed on Silicon Film Crystallinity Deposited by Surface Wave Plasma

Yoshihiko Hotta, Hirotaka Toyoda, and Hideo Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.)

63

Meter-Scale High-Density Microwave Plasma Production with Novel Antenna Coupler Design

Yasuhiro Nojiri, Kazuhiro Takasu,Tatsuo Ishijima, and Hideo Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.)

67

Two Inherent Photoluminescence Bands in Hafnia and Zirconia

Toshihide Ito*, Motohiro Maeda*, Kazuhiko Nakamura*, Masayuki Takase*, Hiromitsu Kato*,**, and Yoshimichi Ohki* (*Waseda Univ., **AIST)

71

Inert Gas Effects on High Aspect Ratio Contact (HARC) Hole Etching

S. Y. Son, C. H. Shin, Y. J. Kim, G. J. Min, C. J. Kang, and H. K. Cho (Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

77

Electron Density Monitoring by Surface Wave Probe in Magnetic Field

So Yajima, Keiji Nakamura*, and Hideo Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.,*Dept. of Electrical Engineering, College of Engineering, Chubu Univ.)

81

SiO₂ Etching and Diagnostics of Radicals in Atmospheric Pressure-Pulsed CF₄/Ar Plasma with O₂ Addition

Masahiro Iwasaki, Masafumi Ito*, Masaru Hori, Hiroya Kitahata**, and Tsuyoshi Uehara** (Graduate School of Engineering, Nagoya Univ.,*Faculty of Systems Engineering, Wakayama Univ.,**Sekisui Chemical Co., Ltd.)

85

ID Bias Control during W/WN/poly Gate Etching for Nano-scale DRAM Process Integration

Kwang-Ok Kim, Jun-Hyeub Sun, Jin-Ki Jung, Sung-Kwon Lee, Yun-Seok Cho, Dong-Duk Lee, Seung-Chan Moon, Jin-Woong Kim, and Gyu-Han Yoon (Memory R&D Div., Hynix Semiconductor Industries Co., Ltd.)

91

Automatic Recipe Control to Improve Wafer-to-Wafer and Lot-to-Lot Linewidth and Profile Variations of Hardmask Open Process using Integrated Optical CD Measurements

J. W. Shon, D. R. Pirkle, Y. J. Jung*, K. J. Min*, and C. J. Kang* (Lam Research Corp., *Samsung Electronics Corp.)

97

Control of Ion Flux Non-Uniformity on Wafer Caused by Sheath Lens Effect

E. Stamate, N. Holtzer and H. Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.)

103

Sheath Voltage Estimation for Thick Glass Substrate Etching

Hiroaki Kawata, Hiroshi Toyota*, Masaaki Yasuda, and Yoshihiko Hirai (Graduate School of Engineering, Osaka Prefecture Univ.,*Osaka Science and Technology Center)

107

Fabrication of a MEMS Probe Card with Feedthrough Interconnections

Seong-Hun Choe and Masayoshi Esashi* (Graduate School of Engineering, Tohoku Univ., *NICHe, Tohoku Univ.)

113

Control of Ion Flux Non-uniformity on Wafer Caused by Sheath Lens Effect

Eugen Stamate, Nicolas Holtzer, and Hideo Sugai (Dept. of Electrical Engineering and Computer Science, Nagoya Univ.)

117

Comparision of C₄F₆ with C₄F₈ Plasma Process for a-C: F Film Deposition

Hiroki Watanabe, Takumi Tokimitsu, Yasuyuki Egashira*, and Yukihiro Shimogaki (Dept. of Material Engineering, The Univ. of Tokyo,*Graduate School of Engineering Science, Osaka Univ.)

121

withdrawn

Dry Etching of Magnetic Thin Film Stacks using CO/NH₃ and CH₃OH Gases for Tunneling Magneto-Resistance Devices

Tomoaki Osada, Mihoko Doi, Kiyotaka Sakamoto, Hiroki Maehara, and Yoshimitsu Kodaira (ANELVA Corp.)

127

Sub-65nm Etch Challenges of High-k and Metal Gate Materials

Gowri P. Kota, Shyam Ramalingam, Steve Lee, Bart Coenegrachts, Chris Lee, Stephan Beckx*, Mark Demand*, and Werner Boullart* (Lam Research Corp., *IMEC)

133

Gate Etch Challenges and Requirements for 45-65 nm Technology

Shyam Ramalingam, Qinghua Zhong, Y. Yamaguchi, and C. Lee (Lam Research Co., Ltd.)

139

High-Rate Growth of Highly-Crystallized Si Films from VHF Inductively-Coupled Plasma CVD

Nihan Kosku and Seiichi Miyazaki (Graduate School of Advanced Sciences of Matter, Hiroshima Univ.)

145

Deposition of Titanium-Silicon-Nitride Films for ULSI Cu Diffusion Barrier Application by Flow Modulation Chemical Vapor Deposition

Young-Hoon Shin, Tatsuya Ishii, and Yukihiro Shimogaki (Dept. of Materials Engineering, The Univ. of Tokyo)

151

Optimization of Etching and Ashing Process for Damascene Formation using Porous MSQ Film

Kazuhiro Kubota, Ryuichi Asako*, Shigeru Tahara,Shin Okamoto, Kaoru Maekawa*, and Kunihiko Hinata (AP Gr., ES Process Development Dept., Tokyo Electron AT Ltd., *Process Integration Center, Tokyo Electron AT Ltd.)

157

Polymer Deposition and Radical Composition in Fluorocarbon Plasma Sources

Keiji Nakamura, Hideo Sugai*, Tetsuya Tatsumi**, Atsuhiro Ando**, and Keiji Oshima** (College of Engineering, Chubu Univ.,*Graduate School of Engineering, Nagoya Univ.,**Semiconductor Solutions Network Company, Sony Corp.)

163

Measurements of Electron Density in Low-Density/High-Pressure Plasmas with Surface Wave Probes

Keiji Nakamura, Hideo Sugai*, Naoki Toyoda**, Jun Kawahara***, Osamu Kiso***, and Keizo Kinoshita*** (College of Engineering, Chubu Univ., *Graduate School of Engineering, Nagoya Univ., **Nissin Inc, ***MIRAI, ASET)

169

Numerical Simulation of Long Surface Wave Produced Plasma Cable

Shamim Ahmad, Kiyohide Baba, Keiji Nakamura, and Shunjiro Ikezawa (Dept. of Electrical Engineering, Chubu Univ.)

175

Negative Bias Etching for ArF Process

Yuki Chiba, Shin Okamoto, Kazuhiro Kubota, and Kunihiko Hinata (Tokyo Electron AT Ltd.)

181

Plasma Non-Uniformities Due to Electromagnetic Effects in Large Area Capacitive Discharges

P. Chabert, A. Perret, J.-L. Raimbault, J.-M. Rax, and M.A. Lieberman* (LPTP, Ecole Polytechnique, *EECS, UC Berkeley)

187

Behavior of Flaked Particles in a Magnetically Enhanced Reactive Ion Etching Equipment

Tsuyoshi Moriya*,**, Hiroshi Nagaike*, Manabu Shimada**, and Kikuo Okuyama** (*ESD Development Dept., Tokyo Electron AT Ltd., **Graduate School of Engineering, Hiroshima Univ.)

193

CD-Uniformity Control Knobs for the Dual-Frequency Gate Etcher

Lee Chen, Yuji Tsukamoto, Fumihiko Higuchi, Masaaki Hagihara, Yohei Yamazawa*, Tetsuya Tatsumi**, and Atsushi Kawashima** (LLC, Tokyo Electron Massachusetts, *Tokyo Electron AT Ltd., **SONY Corp.)

199

Prediction of UV Radiation Damages in Several Insulator Films using On-wafer Monitoring Technique

Yuji Kato*, Yasushi Ishikawa*, Mitsuru Okigawa*,**, and Seiji Samukawa* (*Institute of Fluid Science, Tohoku Univ., **Sanyo Electric Co., Ltd)

205

Plasma-Resistant Glass

Kazuyoshi Arai, Shinkichi Hashimoto, and Tsutomu Takahata (Tokyo Research Lab., TOSOH Corp.)

211

New Ash Challenges for Porous Low-k Integration: Trade-off between Sidewall Film Modification and Increase in k Value

N. Posseme, T. David*,**, T. Chevolleau*, L. Vallier*, P. Meininger**, O. Louveau, M. Fayolle**, and O. Joubert* (ST Microelectronics, *CNRS/LTM, **CEA/LETI)

217

Controlling Low-k Damage During in situ Photoresist Strip

Eric A. Hudson, Tom Choi, Odette Turmel, Lily Zheng, Kenji Takeshita, Sangheon Lee, Alexei Marakhtanov, and Peter Cirigliano (Lam Research Corp.)

223

Dry Etching Damage in Porous Silica Low-k Films and its Recovery by Organosiloxane Vapor Treatment

Tetsuo Ono, Keizo Kinoshita, Takashi Goto, Hideki Takahashi, Nobutoshi Fujii, Yuzuru Sonoda, Yoshiaki Oku, Kazuo Kohmura, Nobuhiro Hata*, and Takamaro Kikkawa*,** (MIRAI, ASET, *Advanced Semiconductor Research Center, AIST, **Research Center for Nanodevices and Systems, Hiroshima Univ.)

229

Quantitative Control of Plasma-surface Interactions for Low-k/Cu Integration

Tetsuya Tatsumi, Keiji Oshima, Koichi Yatsuda*, Takeshi Shibahara*, Kazunori Nagahata, Takahiro Saitoh, Masaki Okamoto, Yoshihiro Kiyonobu, Kaoru Hanada*, Youichi Nogami*, Yasushi Morita*, and Keiji Shinohara (Sony Corp., *Sony Semiconductor Kyushu Inc.)

235

Highly Selective Si₃N₄/SiOC Etching using Dual Frequency Superimposed (DFS) rf Capacitive Coupled Plasma

A. Takase, J. Nishiwaki, K. Yamamoto, A. Kojima, I. Sakai, H. Hayashi, and T. Ohiwa (Semiconductor Company, Toshiba Corp.)

241

In-situ N₂ Plasma Treatment for Cu Surface Control in Dual Damascene Scheme

Shingo Tomohisa, Shigenori Sakamori*, Kazunori Yoshikawa*, Kazumasa Yonekura*, Nobuo Fujiwara*, Kazunori Tsujimoto*, Kyusaku Nishioka**, Hiroshi Kobayashi, and Tatsuo Oomori (Advanced Technology R&D Center, Mitsubishi Electric Corp.,* Wafer Process Engineering Development Div., Renesas Technology Corp., **Semiconductor & Device Group, Mitsubishi Electric Corp.)

247

Advanced Neutral Beam Etching for Future Nano-Scale Devices

Seiji Samukawa, Shuichi Noda, and Tomohiro Kubota (Institute of Fluid Science, Tohoku Univ.)

253

High-speed Si etching and Related Process Integration

Hiroyuki Hashimoto, Masato Hamada, Katsuyuki Ono, and Muneo Harada (MEMS Engineering Dept., Tokyo Electron AT Ltd.)

261

Microplasma Processes for MEMS Application

Takanori Ichiki*,**, Takuya Ideno***, Helen Mei Ling Tan*, Toru Koidesawa***, and Ryo Taura*** (*Faculty of Engineering, The Univ. of Tokyo,**PRESTO, Japan Science and Technology Agency,***Dept. of Electric and Electronics Engineering, Toyo Univ.)

267

Deep Si Etching and Successive Isotropic SiO₂ Etching for MEMS Fabrication

Masahiko Tanaka, Yoshiyuki Nozawa, Shoichi Murakami, Hiroto Kanao, and Toshiji Takigawa (Micro Technology Div., Sumitomo Precision Products Co., Ltd.)

275

MEMS Applications of Dry Processes

Masayoshi Esashi (New Industry Creation Hatchery Center, Tohoku Univ.)

281

Design and Synthesis of Nano-Structured Film by PVD Processing

Jeon G. Han and Hyun S. Myung (Dept. of Advanced Materials, Sungkyunkwan Univ.)

289

Nitridation Process by Microwave Excited Plasma to Form Ultra Thin Gate Dielectrics

Toshio Nakanishi, Tomoe Nakayama, Yoshihiro Sato, Jiro Katsuki, and Shigenori Ozaki (SPA Development Engineering Dept., Tokyo Electron AT Ltd.)

293

Mechanism of Post-etch Corrosion on TiN Surface

Hiroyuki Fukumizu, Shuichi Saito, Shingo Honda*, Itsuko Sakai**, Hisataka Hayashi**, and Tokuhisa Ohiwa** (Corporate Manufacturing Engineering Center, Toshiba Corp.,*Advanced Memory Product Development Memory Div., Toshiba Corp.,**Process & Manufacturing Engineering Center, Toshiba Corp.)

299

Fabrication of 7-nm Nanocolumn Structure using Ferritin Iron-Core Masks and Highly Anisotropic Neutral Beam Etching

Tomohiro Kubota, Tomohiro Baba, Hiroyuki Kawashima*, Yukiharu Uraoka*, Takashi Fuyuki*, Ichiro Yamashita*,**, and Seiji Samukawa (Institute of Fluid Science, Tohoku Univ., *Nara Institute of Science and Technology, **Advanced Technology Research Lab., Matsushita Electric Industrial Co., Ltd.)

305

Dry Etching Technology for Magnetoresistive Random Access Memory

Tadayuki Kimura, Hajime Yamagishi, Mitsuharu Shoji, Makoto Motoyoshi, Atsuhiro Ando, Tetsuya Tatsumi, and Keiji Shinohara (Semiconductor Solutions Network Company, Sony Corp.)

311

Plasma Enhanced Deposition of High Dielectric Constant Materials on Silicon

Jane P. Chang (Univ. of California)

317

Novel Chemical Vapor Deposition of Spherically Oxidized Nanocrystaline Silicon (nc-Si) Quantum Dot Multilayer

Akira Kumagai, Yoichiro Numazawa, Yukinobu Murao, Taira Sato*, and Nobuyoshi Koshida* (Anelva Corp., *Tokyo Univ. of Agriculture and Technology)

325

Hydrogen Ion Drift into Underlying Oxides by Rf Bias during High-Density Plasma Chemical Vapor Deposition

Tadashi Yamaguchi, Mahito Sawada, Koyu Asai, Kiyoteru Kobayashi, and Masahiro Yoneda (Production and Technology Unit, Renesas Technology Corp.)

331

Metal Chloride Reduction Chemical Vapor Deposition of TaN Thin Films

Yuzuru Ogura, Yoshiyuki Ooba, Kenichiro Hatayama, and Hitoshi Sakamoto (Advanced Technology Research Center, Mitsubishi Heavy Industries Ltd.)

337

Characterization of SiO₂ Films Deposited by VUV-CVD using OMCTS Precursor

Kiyohiko Toshikawa*, **, Junichi Miyano*, Yusuke Yagi*, Atsushi Yokotani**, and Kou Kurosawa** (*WP Engineering Development Dept., Miyazaki Oki Electric Co., Ltd.,**Dept. of Electrical and Electronic Engineering, Univ. of Miyazaki)

341

Effects of Solvent on Properties of Cu Films Prepared by HAPCVD using Cu (EDMDD)₂

Kosuke Takenaka, Takao Kaji, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, and Toshiya Shingen* (Grad. School of Information Science and Electrical Engineering, Kyushu Univ., *Asahi Denka Kogyo K.K.)

347

Integrated Modeling of High Aspect Ratio Contact Etching Process and Stress Analysis for Nano-Scale Memory

Ye-Ro Lee, Tai-Kyung Kim, Won-Young Chung, Young-Tae Kim, *Young-Kyu Cho, *Young-Jin Kim, Young-Kwan Park, and Jeong-Taek Kong (CAE Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.,*Process Technology Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

353

Dual Frequency Bias Power Benefits on Dielectric Etch Chamber

J. Liu, J. Wang, W.S. Lee, S. Shannon, J. M. Kim, T. Shin, S. Shoji, T. Detrick, B. Pu, and B. Shieh (Dielectric Etch Div., Applied Materials Inc.)

359

Development of Damage Free HfAlO Removal Process using Plasma Treatment

J. W. Sun, C. H. Shin, G. J. Min, C. J. Kang, H. K. Cho, and J. T. Moon (Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

365

Selective Etching of HfO₂ High-k Gate Material over Si in C₄F₈/Ar/H₂ Plasmas

Kazuo Takahashi and Kouichi Ono (Dept. of Aeronautics and Astronautics, Kyoto Univ.)

369

Nano and Microscale BioPOEMS for Genomics and Proteomics

Luke P. Lee (UCB)

375