Current and Future Memory Technology
U-In Chung (Samsung Electronics)
1
Contact Hole Etching Challenges for Nano Era
S.K. Lee, M.S. Lee, K.S. Shin, Y.C. Kim, J.H. Sun, T.W. Jung, D.D. Lee, S.C. Moon, and J.W. Kim (Hynix Semiconductor)
3
Etching Characteristics and Modeling for Oval-Shape Contact
S.C. Park, S. Lim, C.H. Shin, G. J. Min, C. J. Kang, H.K. Cho, and J.T. Moon (Samsung Electronics)
5
Dependence of Plasma-Induced Modification of Surfaces on Polyatomic Ion Chemistry
Inkook Jang, Wen-Dung Hsu, and Susan B. Sinnott (University of Florida)
7
Improvement in Gate LWR with Plasma Curing of ArF Photoresist
A. Ando, E. Matsui, N. Matsuzawa, Y. Yamaguchi, K. Kugimiya, M. Yoshida, K.M.A. Salam, and T. Tatsumi (Sony Corporation)
9
Sub-55-nm Etch Process Using Stacked-Mask Process
J. Abe, H. Hayashi, Y. Taniguchi, H. Kato, Y. Onishi, I. Sakai, and T. Ohiwa (Toshiba Corporation Semiconductor Company)
11
Control of Oxidation on NiSix during Etching and Ashing Process
S. Sakamori1, K. Yonekura1, N. Fujiwara1, T. Kosaka2, M. Ohkuni2, and K. Tateiwa2 (1Renesas Technology, 2Matsushita Electric Industrial Co., Ltd.)
13
Ion, Electron and Radical Dynamics in a Dual-Frequency Dielectric Etcher
J.P. Booth, G. Curley, and N. Bulcourt (Ecole Polytechnique)
15
A Case Study of Model Based Development of Plasma Sources: Multi-Frequency MERIE Reactors
Mark J. Kushner and Yang Yang (Iowa State University)
17
Control of Meter-Scale High-Density Microwave Plasma for Giant Materials Processing
Y. Nojiri, Y. Yamaguchi, T. Ishijima, and H. Sugai (Nagoya University)
19
Controlling the Ion Flux on Substrates of Different Geometry by Sheath-Lens Focusing Effect
E. Stamate and H. Sugai (Nagoya University)
21
Yield Improvement for 65nm and 45nm Integrated Circuits Using Advanced Transistor Structures and Damascene Processes
Paul Aum1 and Thuy Dao2 (1Spider Systems, 2Freescale Semiconductor)
23
Study of Plasma Charging-Induced White Pixel Defect Increase in CMOS Active Pixel Sensor
Ken Tokashiki, KeunHee Bai, KyeHyun Baek, Yongjin Kim, Gyungjin Min, Changjin Kang, Hanku Cho, and Jootae Moon (Samsung Electronics)
25
Plasma Induced Damage on Ultra Shallow Junction in Spacer Etching
Hikaru Kokura, Kenichi Okabe, Masafumi Nakaishi, and Motoshu Miyajima (Fujitsu Limited)
27
Control of Radical and Ion Densities and Its Application to Damage-Free Resist Stripping over SiOCH in Oxygen-Based Surface Wave Plasmas
M. Hori1, K. Takeda1, Y. Kubota1, M. Sugiura1, Y. Matsumi1, S. Tahara2, and K. Kubota2 (1Nagoya University, 2Tokyo Electron)
29
Plasma Damages on Low-k Films in Etching and Photoresist Ashing
S. Takashima1, S. Uchida1, K. Ohshima2, K. Nagahata2, T. Tatsumi2, and M. Hori1 (1Nagoya University, 2Sony Corporation)
31
Resist Rework on Metal Hardmask in a Low-Plasma Damage Patterning Approach
H. Struyf, D. Hendrickx, G. Mannaert, W. Boullart, and S. Vanhaelemeersch (IMEC)
33
Low Damage Etch Approach of a New Porous SiOC(H) Low-k Dielectric
J. Van Aelst, Y. Travaly, H. Struyf, T. Dupont, D. Hendrickx, W. Boullart, and S. Vanhaelemeersch (IMEC)
35
Study on the Structural Changes of Low-k Material during Ashing and Stripping
S.-I. Cho, K.-K. Chi, C.-J. Kang, H.-K. Cho, and J.-T. Moon (Samsung Electronics)
37
Restoration Process for Degraded Porous MSQ Film
S. Tahara, R. Asako, Fitrianto, Y. Fujii, K. Kubota, K. Maekawa, and K. Hinata (Tokyo Electron)
39
Effect of Dry Etching Chemistry on Reduction of Surface Roughness of Porous Silica Low-k Film
Tetsuo Ono1, Keizo Kinoshita1, Kazuaki Kurihara1, Yuko Takasu2, Yutaka Seino2, Nobuhiro, Hata2, and Takamaro Kikkawa2,3 (1MIRAI, ASET, 2MIRAI, National Institute of Advanced Industrial Science and Technology, 3Hiroshima University)
41
Contact Patterning Scheme for Organo-Siloxane Low-k Material as Pre-Metal Dielectric
JF de Marneffe, Q.T. Le, S. Demuynck, H. Struyf, and W. Boullart (IMEC)
43
The Structures of Low Dielectric Constant SiOC Thin Films Prepared by Direct and Remote Plasma Enhanced Chemical Vapor Deposition
Jaeyeong Heo1, Hyeong Joon Kim1, JeongHoon Han2, and Jong-Won Shon2 (1Seoul National University, 2Jusung Engineering)
45
Plasma Enhanced Chemical Vapor Deposition of Low Dielectric Constant SiOC(-H) Films using MTES/O2 Precursor
R. Navamathavan and Chi Kyu Choi (Cheju National University)
47
A Study on the Plasma Parameters and Characteristics of Carbon Doped Silicon Oxide Film using MTMS/O2 and He Plasma
Chang Sil Yang and Chi Kyu Choi (Cheju National University)
49
A Study on the SIOC(-H) Films with Nano-Pore Structure Deposited by ICPCVD
Kyoung Suk Oh and Chi Kyu Choi (Cheju National University)
51
Electrical and Structural Properties of Amorphous Nitride Carbon (a-C:N) Films Deposited by Closed-Field Unbalanced Magnetron Sputtering with Different Nitrogen Content
Yong Seob Park and Byungyou Hong (SungKyunKwan Univ.)
53
Fluorine Doped Low Refractive Index SiOCF:H Films for Increasing Light Emission Prepared by Plasma Enhanced Chemical Vapor Deposition
S.G. Yoon, S.M. Kang, H. Kim, and D.H. Yoon (SungKyunKwan Univ.)
55
Etching of High-k Dielectric HfO2 Films in BCl3/O2 Plasmas
K. Nakamura1, T. Kitagawa1, K. Osari1, K. Takahashi1, K. Ono1, M. Oosawa2, S. Hasaka2, and M. Inoue2 (1Kyoto University, 2Taiyo Nippon Sanso Corporation)
57
Damage Free Process of MISFET(TaN/HfO2/Si) by Inductively Coupled Plasma
S.K. Yang, S.G. Lee, B.H. O, I.H. Lee, and S.G. Park (Inha university)
59
Etching Properties of High Work Function IrO2 in Cl2 / SF6 Plasma for CMOS Application
H.H. Ngu, W.S. Hwang, and W.J. Yoo (National University of Singapore)
61
Etching Characteristics and Mechanisms for SrBi2Ta2O9(SBT), Pb(Zr,Ti)O3(PZT) and (Ba,Sr)TiO3(BST) Thin Films in Cl2/Ar Inductively Coupled Plasma
A. Efremov1, G.H. Kim2, and C.I. Kim2 (1State University of Chemistry and Technology, 2Chung-Ang University)
63
Effect of Fluorocarbon Gases on the Selective Etching of ZrOx Films using Inductively Coupled BCl3-Based Plasmas
Sang-Duk Park, Jong-Hyuk Lim, and Geun-Young Yeom (Sungkyunkwan University)
65
Ion Beam Etching of Co3Pt Magnetic Nano Dot Array
D.H. Lee1, T.W. Lim1, G.H. Jeong1, S.J. Suh1, and S.Y. Yoon2 (1Sungkyunkwan University, 2Samsung Advanced Institute of Technology)
67
Dielectric Response of Strained BaTiO3/SrTiO3 Artificial Superlattice: First-Principles Study
Leejun Kim1, Do Duc Cuong1, Juho Kim1, Umesh V Waghmare2, Donggeun Jung1, and Jaichan Lee1 (1Sung Kyun Kwan University, 2J. Nehru Certre for Advanced Scientific Research)
69
Growth and Lattice Strain of SrTiO3/(Sr1-xLax)TiO3 Superlattice Grown by Laser Molecular Beam Epitaxy
Juho Kim, Leejun Kim, Dongguen Jung, and Jaichan Lee (Sungkyunkwan University)
71
Reversible Resistive Switching of Cr-Doped SrTiO3 Thin Films Deposited by Pulsed Laser Deposition
Chul-Ho Jung, Taekjib Choi, Le Tran, and Jaichan Lee (Sungkyunkwan University)
73
Perpendicular Exchange Bias of TbFeCo/FePt Multilayer for High Density Magnetic Random Access Memory Application
Hojun Ryu and Dongwoo Suh (Electronics and Telecommunication Research Institute)
75
The Electrical Properties of ZrO2 Based Metal-Insulator-Metal Capacitors
Anna Park, K. Prabakar, and Chongmu Lee (Inha University)
77
The Effects of Thermal Treatment and Ge Contents on Interfacial Properties of ZrO2 Thin Films on SiGe Layers
Hoon Sang Choi1,2, Jae Sung Hur2, Sung Ju Tark2, Sangyul Baek2, Lee, Jeong Seop2 , Chang-Sik Son3, and In-Hoon Choi2 (1RIKEN (The Institute of Physical and Chemical Research), 2Korea University, 3Silla University)
79
Study of Metal Doping Effect on the Ge2Sb2Te5 : Phase Change Materials
Tae-Jin Park, Myung-Jin Kang, and Se-Young Choi (Yonsei University)
81
Electron Energy Distribution Function in High Power Pulsed Magnetron Sputtering Source and Electron Density Change
J. H. In1, S. H. Seo1, H. Y. Chang1, and J. G. Han2 (1Korea Advanced Institute of Science and Technology, 2Sungyunkwan University)
83
Diagnostics of CF2 Radical and Molecules in Non-Equilibrium Atmospheric Pressure-Pulsed Plasma for SiO2 Etching
M. Iwasaki1, M. Ito2, T. Uehara3, and M. Hori1 (1Nagoya University, 2Wakayama University, 3Sekisui Chemical)
85
Suppression of Energetic Species Flux to Substrate by Combination of VHF and DC Power in Magnetron Plasma
Y. Sakashita, Y. Takagi, H. Toyoda, and H. Sugai (Nagoya University)
87
Energetic Particle Flux Suppression on Substrate Using Cylindrical Magnetron for High Quality Film Deposition
Y. Takagi, Y. Sakashita, H. Toyoda, and H. Sugai (Nagoya University)
89
Conformal Deposition of Ti Films in Fine-Patterns Using a High-Pressure Magnetron Sputtering Plasma Source
N. Nafarizal1, N. Takada1, K. Nakamura2, Y. Sago3, and K. Sasaki1 (1Nagoya University, 2Chubu University, 3ANELVA Corporation)
91
Study of RF Magnetron Plasma Characteristics for Metal Oxide Deposition
Joyanti Chutia, A.R. Pal, B.K. Sarma, and H. Bailung (Institute of Advanced Study in Science & Technology.)
93
Behavior of Nitrogen Atom in High Density Plasma in Rare Gas / Nitrogen Mixture
T. Okada, T. Ishijima, Y. Honda, and H. Sugai (Nagoya University)
95
Plasma Parameters in the Vicinity of the Quartz Window of a Low Pressure Surface Wave Plasma Produced in O2
S. Nakao, E. Stamate, and H. Sugai (Nagoya University)
97
Stabilization of Radical Density in Fluorocarbon Plasmas
K. Nakamura1, K. Kumagai1, T. Tatsumi2, and K. Oshima2 (1Chubu University, 2Sony Corporation)
99
Plasma Diagnosis in Formation of Ultra Water Repellent Thin Films by PECVD Method
Y.S. Yun, N. Shimazu, E. Oriyama, T. Yoshida,Y. Inoue, N. Saito, and O. Takai (Nagoya University)
101
Electron Temperature Determination by Optical Emission Spectroscopy in Inductively Coupled Plasmas
Yi-Kang Pu, Xi-Ming Zhu, and Zhi-Gang Guo (Tsinghua University)
103
Ion Species Analysis with Quadrupole Mass Spectrometry in Ar/Cl2 Inductively Coupled Plasma for the Estimation of Etching Mechanism
J.G. Kim1, G.H. Kim1, C.I. Lee2, T.H. Kim3, and C.I. Kim1 (1Chung-Ang University, 2Ansan College of Technology, 3Yeojoo Technical College)
105
A Novel Frequency Compensated Langmuir Probing Technique for Measuring Helicon Plasma Parameters
S.N. Ghosh1, D. Bora2, Jinsu Yoo1, M. Gowtham1, I. Parm1, and Junsin Yi1 (1Sungkyunkwan University, 2Insitute of Plasma Research)
107
Electrical Characteristics of Poly(3-hexylthiophene) Organic Thin Film Transistor with Electroplated Metal Gate Electrodes on Polyimide
Y. G. Seol, J. G. Lee, and N.-E.Lee (Sungkyunkwan University)
109
Effects of Surface Modification for Organic Light-Emitting Diodes Treated by Inductively Coupled O2 Plasma
C.H. Jeong, J.H. Lee, K.S. Min, J.T. Lim, and Geun Young Yeom (Sungkyunkwan university)
111
Admittance Spectroscopic Analysis of Organic Light Emitting Devices with a LiF Buffer Layer at the Cathode/Organic Interface
U. Manna, H.M. Kim, Sunyoung Sohn, Donggeun Jung, and J. Yi (Sungkyunkwan University)
113
Synthesis and Blue Electroluminescent Properties of Zinc(II)[2-(2-hydroxybenzoxazole)]
Won Sam Kim1, Jung Min You1, Eun Mi Son1, Burm-Jong Lee1, Yoon-Ki Jang2, and Young-Soo Kwon1 (1Inje University, 2Dong-A University)
115
White OLEDs Based on Novel Emissive Materials as Zn(HPB)2 and Zn(HPB)q
Yoon-Ki Jang1, Oh-Kwan Kwon1, Burm-Jong Lee2, and Young-Soo Kwon1 (1Dong-A University, 2Inje University)
117
Study on Improvement of OLEDs Properties using Zn(phen)q
Dong-Eun Kim1, Won-Sam Kim2, Oh-Kwan Kwon1, Burm-Jong Lee2, and Young-Soo Kwon1 (1Dong-A University, 2Inje University)
119
Synthesis and Photophysical Studies of a New Phosphorescent Iridium(III) Quinazoline Complex
Y.H. Lee, Y.H. Park, G.Y. Park, N.G. Park, and Y.S. Kim (Hongik University)
121
Efficient Red-Emitting Phosphorescent Iridium(III) Complexes of Fluorinated 2,4-Diphenylquinolines
Y.H. Park, Y.H. Lee, G.Y. Park, N.G. Park, and Y.S. Kim (Hongik University)
123
Phosphorescent Hetero-Iridium(III) Complex Containing Phenylpyridine and 1-(4'-fluorophenyl)benzoquinoline Ligands
G.Y. Park, Y.H. Park, Y.H. Lee, and Y.K. Ha (Hongik University)
125
Organic Light-Emitting Devices with a Mixed Layer Acting as Hole Transport and Emitting/Electron Transport Layers
Y.B. Yoon1, T.W. Kim1, H.W. Yang1, J.H. Seo2, J.H. Kim2, and Y.K. Kim2 (1Hanyang University, 2Hong-ik University)
127
Luminescence Mechanisms of Highly Efficient Organic Light-Emitting Devices Fabricated Utilizing Stepwise Doped Hole Transport Layers
H.W. Yang1, Y.B. Yoon1, D.U. Lee1, T.W. Kim1, J.H. Kim2, J.H. Seo2, and Y.K. Kim2 (1Hanyang University, 2Hong-ik University)
129
Highly Efficient Organic Light-Emitting Diodes Fabricated Utilizing NiO Buffer Layers between Anodes and Hole Transport Layers
H.C. Im1, D.C. Choo1, T.W. Kim1, J.H. Kim2, J.H. Seo2, and Y.K. Kim2 (1Hanyang University, 2Hong-ik University)
131
Optical and Electrical Properties of p-Type Transparent Conducting CuAlO2 Thin Film
Dae-Sung, Kim and Se-Young, Choi (Yonsei University)
133
Preparation of Transparent Conductive Thin Films by RF Magnetron Sputtering
Sung Ju Tark, Mingu Kang, Sang-yul Baek, and Donghwan Kim (Korea university)
135
The Properties of Post-Annealing Al-Doped ZnO by RF Magnetron Sputtering
Sang-yul Baek, Lee, Jeong Seop, Jae-sung Hur, Sung ju Tark, Byoung-hoon Lee, and In-hoon Choi (Korea University)
137
Improved SiO2 Film Deposited by APCVD using TEOS/O3
Jun-Sik Kim, I. Parm, and Jun-Sin Yi (Sungkyunkwan University)
139
Aluminum Doped zinc Oxide Films Deposition Using Inductively-Coupled Plasma Assisted Magnetron Sputtering
Y. Nagano, S. Iwai, M. Shinohara, Y. Matsuda, and H. Fujiyama (Nagasaki University)
141
HfO2 Gate Insulator Formed by Atomic Layer Deposition for Thin-Film-Transistors
S.-W. Jeong1, H.J. Lee1, K.S. Kim1, M.T. You1, Y. Roh1*, T. Noguchi2, W. Xianyu2, and J. Jung2 (1Sungkyunkwan University, 2Samsung Advanced Institute of Technology)
143
The Effects of New Penning Gas in an AC-PDP
B.K. Joung, J.S. Kim, S.O. Kwon, and H.J. Hwang (Chung-Ang University)
145
Effect of Additives to MgO Protective Layer for AC-PDP
Jin-Woo, Kim, Sung-Jin, Park, and Se-Young, Choi (Yonsei University)
147
Correlation between Density and Surface Crystal Orientation of MgO Protective Layer in AC-PDPs
H.J. Lee, C.G. Son, J.M. Jeoung, J.W. Hyun, S.O. Kang, and E.H. Choi (Kwangwoon University)
149
Wall Charge Characteristics in Accordance with Square and Ramped Reset Pulse in AC-PDP
Soo Beom. Lee, J.M. Jeoung, B.D. Ko, P.Y. Oh, M.W. Moon, K.B. Song, J.H. Lee, J.E. Lim, H.J. Lee, Y.G. Han, N.L. Yoo, S.H. Jeoung, C.G. Son, and E.H Choi (Kwangwoon University)
151
Multi-Scale Computational Framework for Processing of Carbon Nanotubes
Kwang Hee Kim1, Hyuk Soon Choi1, Ki-Ha Hong1, Jongseob Kim1, Hyo Sug Lee1, Jai Kwang Shin1, A.V. Vasenkov2, A.I. Fedoseyev2, and Vladimir Kolobov2 (1Samsung Advanced Institute of Technology, 2CFD Research Corporation)
153
Enhanced Photovoltaic Effects by Carbon Nanotube Functionalized with CdS
Yoonmook Kang and Donghwan Kim (Korea University)
155
Electrospun Carbon Nanotubes / Polyvinyl Alcohol (PVA) Composite Nanofibers
Jin-Su Jeong, Jin-San Moon, and Ji-Beom Yoo (Sungkyunkwan University)
157
A Studies on High Yield and Large-Scale Synthesis of Single-Walled Carbon Nanotubes by Catalytic Chemical Vapor Deposition Method
J.S. Kim, O.J. Yoon, J.K. Jung, and C.I. Kim (Chung-Ang University)
159
Nano-Size Domain Formation and Switching in Ferroelectric PbZrO3/PbTiO3 Artificial Superlattice Fabricated by Pulsed Laser Deposition
Taekjib Choi1, Jin-Sik Choi2, Bae Ho Park2, Hyunjung Shin3, and Jaichan Lee1 (1Sungkyunkwan University, 2Konkuk University, 3Kookmin University)
161
Fabrication of Si Nano-Wire MOSFET for High-Sensitivity Photodetector Applications Using Reactive Ion Etching
Young-Shik Shin1, Sang-Ho Seo1, Mi-Young Do1, Jang-Kyoo Shin1, Jae-Hyoun Park2, and Hoon Kim2 (1Kyungpook National University, 2Korea Electronics Technology Institute)
163
Fabrication of Nano Structure using Block Copolymer for Non-Volatile Memory
Sungwook Jung1, M. Gowtham1, Dae-Ho Park2, Byeong-Hyeok Sohn3, Jin Chul Jung2, Wang Cheol Zin2, I.O. Parm1, and Junsin Yi1 (1Sungyunkwan University, 2Pohang University of Science and Technology, 3Seoul National University)
165
Field-Emission Characteristics of Diamond-Like Amorphous Carbon Films Deposited by Mixed Gas (N2 or H2) Controlled i-C4H10 Supermagnetron Plasma
Haruhisa Kinoshita and Manabu Yamashita (Shizuoka University)
167
Submicron Optical Near Field Diffraction Patterns Obtained by Irradiation of Octadecyltrimethoxysilane Self-Assembled Monolayers with Light at 157 nm
F.A. Nae, N. Saito, and O. Takai (Nagoya University)
169
Realization of Various Sub-Micron Metal Patterns Using Room Temperature Nanoimprint Lithography
Jun-Ho Sung, Kyung-Jin Lim, Seung Gol Lee, Se-Geun Park, El-Hang Lee, and Beom-Hoan O (Inha University)
171
Bicrystalline Gallium Oxide Nanobelts
Hyoun Woo Kim, Ju Hyun Myung, and Seung Hyun Shim (Inha University)
173
Growth and Characteristics of Tin Oxide Belt-Like and Sheet-Like Structures
Hyoun Woo Kim, Seung Hyun Shim, and Ju Hyun Myung (Inha University)
175
Surface Modification of Poly(dimethyl siloxane) (PDMS) for Controlling Biological Cells' Adhesion Using a Scanning Radical Microjet
Helen M.L. Tan1, H. Fukuda2, T. Akagi1, and T. Ichiki1,3 (1University of Tokyo, 2Toyo University, 3PRESTO, Japan Science and Technology Agency)
177
Amperometric Biosensor Based on Direct Electrochemistry of Hemoglobin in Poly-Allyl Amine (PAA) Films
A.K.M. Kafi, Hoon-Kyu Shin, and Young-Soo Kwon (Dong-A University)
179
Fabrication of the Magnesium Films for Drug Delivery System
Sung Joon Park, H. J. Kang, J.B. Yoo, and D. J. Kim (Sungkyunkwan University)
181
Controlled Drug Release Using Nanoporous Anodic Aluminum Oxide on Stent
Ho-Jae Kang1, Sung-Joon Park1, Ji-Beom Yoo1 Deug Joong Kim1, and Y.S. Ryu2 (1Sungkyunkwan University, 2R&D Center HUMED Ltd.)
183
Study on Electrical Conduction of Viologen Derivatives Using Scanning Tunneling Microscopy
Nam-Suk Lee1, Oh-Kwan Kwon1, A.K.M. Kafi1, Dong-Jin Qian2, and Young-Soo Kwon1 (1Dong-A University, 2Fudan University)
185
Charge-Transfer Interaction of Viologen Derivation Using Electrochemical QCM Method
Dong-Yun Lee1, Hoon-Kyu Shin1, Dong-Jin Qian2, and Young-Soo Kwon1 (1Dong-A University, 2Fudan University)
187
Highly Selective SiOC/Si3N4 and Si3N4/SiOC Etching by Precision Energy Control for Dual Damascene Formation
Hisataka Hayashi, Itsuko Sakai, and Tokuhisa Ohiwa (Toshiba Corporation Semiconductor Company)
189
Low-Damage and High-Precision Dual-Damascene Patterning for Sub-65-nm Node Cu/Low-k Interconnects
K. Yonekura1, K. Yoshikawa1, Y. Fujiwara1, S. Sakamori1, N. Fujiwara1, T. Kosaka2, M. Ohkuni2, and K. Tateiwa2 (1Renesas Technology, 2Matsushita Electric Industrial Co.)
191
Hard-Mask Etching Process Design for Dual Damascene Fabrication with porous SiOCH Films
H. Ohtake, M. Tada, M. Abe, M. Ueki, M. Tagami, S. Saito, and Y. Hayashi (NEC Corporation)
193
Novel Self Aligned Dual Damascene Process Integration for 65nm Technology Node
M. Nagase, T. Maruyama, M. Iguchi, M. Suzuki, M. Tominaga, and M. Sekine (NEC Electronics Corporation)
195
Sacrificial CVD Film Etch-back Technology for Air-Gap Cu Interconnects
Shoichi Uno, Kiyomi Katsuyama, Junji Noguchi, Kiyohiko Sato,Takayuki Oshima, Masanori Katsuyama, and Kazusato Hara (Hitachi)
197
A Novel Organosiloxane Vapor Annealing Process for Improving Properties of Porous Low-k Films
K. Kohmura1, H. Tanaka1, S. Oike1, M. Murakami1, N. Fujii1, S. Takada2, T. Ono1, Y. Seino2, and T. Kikkawa2,3 (1MIRAI-ASET, 2National Institute of Advanced Industrial Science and Technology, 3Hiroshima University)
199
Influence of Atomic Hydrogen on Porous Low-k Dielectric for 45nm Node
K. Tomioka1, E. Soda1, N. Kobayashi1, M. Takata2, S. Uda2, K. Ogushi2, Y. Yuba2, and Y. Akasaka2 (1Semiconductor Leading Edge Technologies, 2Osaka University)
201
Characterization and Integration of New Porous Low-k Dielectric (k<2.3) for 65nm Technology and Below
Kyeong-Keun Choi, Ihl Hyun Cho, Sang Jong Park, Jung Eun Lim, Oh Jin Jung, Jong Hyuk Park, Byung Seung Min, Sungbo Hwang, Min Jin Ko, and Jeong Gun Lee (MagnaChip Semionductor)
203
Nano-particle Composite Porous Films Prepared by Plasma Chemical Vapor Deposition
Masaharu Shiratani1, Shota Nunomura2, Kazunori Koga1, Yukio Watanabe3, Yoshinori Morisada4, Nobuo Matsuki4, and Shingo Ikeda4 (1Kyushu University, 2National Institute of Advanced Industrial Science and Technology, 3Kyushu Electric College, 4ASM Japan K.K.)
205
Plasma/Reactor Walls Interactions in Gate Etching Processes
G. Cunge1, R. Ramos1, O. Joubert1, N. Sadeghi2, and M. Mori3 (1Laboratoire des Technologies de la Micro?lectronique, CNRS, 2Laboratoire de Spectrom?trie Physique, CNRS-UJF, 3Hitachi central Research Laboratory)
207
In-Situ Study of Plasma-Wall Interactions in Inductively Coupled Fluorocarbon Plasma
L. Overzet, M. Goeckner, E. Joseph, B. Zhou, and S. Sant (The University of Texas at Dallas)
209
Laser-Induced Fluorescence Ion Diagnostics in Light of Plasma Processing
R. McWilliams1, E.A. Hudson2, and J.P. Booth3 (1University of California, 2Lam Research, 3Ecole Polytechnique)
211
Development of Frequency Shift Probe for Monitoring Electron Density in Plasma Reactor
S. Yajima1, K. Nakamura2, and H. Sugai1 (1Nagoya University, 2Chubu University)
213
Electron Heating Mechanism in a Planar Surface Wave Plasma Source
A. Kono, T. Otsuki, L Li, J. Kobayashi, and M. Aramaki (Nagoya University)
215
Advanced LTPS Technology for AM Displays
Jin Jang, Jun Hyuk Cheon, and Jae Hwan Oh (Kyung Hee University)
217
Electromagnetic Sources of Nonuniformity in Large Area Capacitive Plasma Reactors
A.A. Howling1, L. Sansonnens1, Ch. Hollenstein1, and J.P.M. Schmitt2 (1Ecole Polytechnique Federale de Lausanne (EPFL), 2Unaxis Displays)
219
Low-Temperature Process for Advanced FPDs
Hidejiro Kobayashi (Advanced LCD Technology Development Center)
221
Thermal and Optical Properties of CuO Doped Bi2O3 Base System for Transparent Dielectric Layer
J.Y. Song, E.K. Jeong, J.E. Park, and S.Y. Choi (Yonsei University)
223
Maskless Laser Imaging Technology for FPD Patterning
K.R. Kim1, H.S. Kang1, S.K. Hong1, and S.W. Min2 (1LG Electronics, 2HardRAM)
225
Effects of Operating Voltage Waveforms and Power Control Methods on the Light Emission from a Xe Plasma Flat Lamp
Hyuk-Hwan Kim and Won-Jong Lee (Korea Advanced Institute of Science and Technology)
227
Key Issues for Large-Area a-Si TFT-LCD Using Low Temperature Processes on PES Plastic Substrate
MunPyo Hong, Sang Il Kim, Woo Jae Lee, Sung Jin Kim, Wang Su Hong, Hyung Il Jeon, Tae Yong Hwang, Jae Hyun Cho, and Kyuha Chung (Samsung Electronics)
229
Suppression of Hydrogen Ion-Drift into Underlying Layers Using p-SiOxNy Film during High Density Plasma-Chemical Vapor Deposition
T. Murata, T. Yamaguchi, M. Sawada, S. Shimizu, K. Asai, H. Miyatake, and M. Yoneda (Renesas Technology Corporation)
231
Growth of Crystallized Ge Films from VHF Inductively-Coupled Plasma of H2-Diluted GeH4
Tsutomu Sakata, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki (Hiroshima University)
233
Epitaxial Lithium Niobate Film Growth by Metalorganic Chemical Vapor Deposition
Y. Akiyama1, K. Shitanaka1, H. Murakami1, Y.S. Shin2, M. Yoshida2, and N. Imaishi2 (1Tokai University, 2Kyushu University)
235
The Investigation of Ni Thin Film by Atomic Layer Deposition
K.W. Do, C.M. Yang, I.S. Kang, K.M. Kim, K.H. Back, H.I. Cho, H.B. Lee, S.H. Kong, S.H. Hahm, J.H. Lee, and J.H. Lee (Kyungpook National University)
237
Ni-Silicide Precursor for Gate Electrode
M. Ishikawa1, I. Muramoto1, H. Machida1, S. Imai2, A. Ogura2, H. Suzuki3, and Y. Ohshita3 (1Tri Chemical Laboratories, 2Meiji University, 3Toyota Technological Institute)
239
Profile Simulation of High Aspect Ratio Contact Etch
Doosik Kim, Eric Hudson, David Cooperberg, Erik Edelberg, and Mukund Srinivasan (Lam Research Corporation)
241
MD Simulations of Amorphous SiO2 Thin Film Formation in Reactive Sputtering Deposition Processes
M. Taguchi1,2 and S. Hamaguchi1 (1Osaka University, 2Nippon Sheet Glass)
243
Molecular Dynamics Simulation Analyses on Injection Angle Dependence of SiO2 Sputtering Yields by Fluorocarbon Beams
Tomohito Kawase and Satoshi Hamaguchi (Osaka University)
245
Investigation of the Ion Dose Non-Uniformity Caused by Sheath Lens Focusing Effect on Silicon Wafers
N. Holtzer, E. Stamate, H. Toyoda, and H. Sugai (Nagoya University)
247
Improvement of Film Roughness by Distinctive Ion Energy Distribution In Grid Attached Unbalanced Magnetron
J.H. In1, M.J. Jung2, H.Y. Chang1, and J.G. Han2 (1Korea Advanced Institute of Science and Technology, 2Sungyunkwan University)
249
Plasma Assisted Nitriding of Al-Mg Alloy in an EBEP Device
T. Hishida and T. Hara (Toyota Technological Institute)
251
Dry Cleaning Process using N2H2 Plasma for 70nm Contact Hole Etch and Beyond
Jun-Hee Cho, Tae-Woo Jung, Jin-Ki Jung, Seok-Kiu Lee, Yun-Seok Cho, Dong-Duk Lee, Seung-Chan Moon, and Jin-Woong Kim (Hynix Semiconductor)
253
Organic Contaminants Removal by Oxygen ECR Plasma
Sookjoo Kim and Chongmu Lee (Inha University)
255
Surface Reactions in Non-thermal Plasma-Catalyst Hybrid Systems During NOx Removal
M. Dors1, G.V. Nichipor2, Y.S. Mok3, and J. Mizeraczyk2 (1Polish Academy of Sciences, 2National Academy of Sciences of Belarus, 3Cheju National University)
257
Effect of RF Bias Voltage on Crystallinity of TiO2 Thin Films Produced by Reactive Sputtering in an ECR Plasma
Yasuro Nakagawa1, Toyohisa Asaji2, Yushi Kato2, Fuminobu Sato2, and Toshiyuki Iida2 (1Toyama Prefectural University, 2Osaka University)
259
Effect of Radical-Distribution Control on Etching-Profile Uniformity in Dielectric Etching
Hiroyuki Kobayashi1, Ken'etsu Yokogawa1, Kenji Maeda1, Tadamitsu Kanekiyo2, and Masaru Izawa1 (1Hitachi, 2Hitachi High-Technologies Corp.)
261
Extension and Improvement on Dielectric Etch Process through Continuous Hardware Innovation
T. Shin, J. Liu, R. Lindley, J. Kim, A. Joshi, W. Wu, S. Shoji,H. Noorbakhsh, Dan Hoffman, B. Pu, and T. Detrick (Applied Materials)
263
Controlling Gate-CD Uniformity by Means of a CD Prediction Model and Wafer-Temperature-Distribution Control
S. Kanno1, G. Miya1, J. Tanaka1, T. Masuda1, K. Kuwahara2, M. Sakaguchi2, A. Makino2, T. Tsubone2, and T. Fujii2 (1Hitachi, Ltd., Central Research Laboratory, 2Hitachi High-Technologies Corp.)
265
Advanced Gate Etch Processing Utilizing Dynamic Wafer Temperature Control
T. Panagopoulos, N. Gani, T. Kropewnicki, A. Matyushkin, M. Shen, J. Holland, and T. Lill (Applied Materials)
267
Study of Silicon Etching by CF4-based Neutral Beam
B.J. Park1, C.K. Oh1, J.H. Lim1, M.S. Kim1, D.H. Lee2, and G.Y. Yeom1 (1Sungkyunkwan university, 2Samsung Electronics)
269
Silicon Recess Reduction with Source-Driven HBr/O2 Overetch and Lam Advanced Gate Additive
D. Humbird, S. Sriraman, L. Braly, and C. Lee (Lam Research Corporation)
271
Highly Selective W Etching by Using Advanced Microwave Plasma Source with RLSA
T. Nishizuka1, C. Tian1, S.Y. Kang1, T. Nozawa1, T. Goto2, and T. Ohmi2 (1Tokyo Electron, 2Tohoku University)
273
Micro-Loading Effect of WSi Gate Etch for Beyond 90nm DRAM Technology
Kuo-chung Chen, Jen-jui Huang, Chih-ching Lin, Chang-ming Wu, Tse-yao Huang, and Jengping Lin (Nanya Technology Corporation)
275
High Performance SiO2 Etching in Low Pressure Using Very High Frequency Capacitively Coupled Plasma
Y.K. Cho1, K.K. Chi1, C.J. Kang1, and W.S. Lee2 (1Samsung Electronics, 2Applied Materials)
277
Multi-Layer Amorphous Carbon Hardmask Open in Capacitive Coupling High Frequency Plasma Dielectric Etch Chamber
Judy Wang, Shing-li Sung, Zhifeng Sui, Joshua Tsui, Shawming Ma, and Bryan Pu (Applied Materials)
279
Comparison of C4F6-Based and C4F8-Based Etch Chemistries for SiO2 Etching with ArF Photoresist Using Dual Frequency Superimposed Capacitive Coupled Plasmas (DFS-CCP)
C.H. Lee, C.K. Park, and N.-E.Lee (Sungkyunkwan University)
281
Silicon Etching in SF6 Radio-Frequency Discharge: Electrode Structure and Etching Rate
I.O. Parm, S.K. Dhungel, and J. Yi (Sungkyunkwan University)
283
Effects of N2 Addition during Chemical Dry Etching of Silicon Nitride and Oxynitride Layers in NF3/N2/Ar Remote Plasmas
D.J. Kim1, J.Y. Hwang1, N.-E. Lee1, Y.C. Jang2, and G. Bae2 (1Sungkyunkwan University, 2Shihwa Indus. Com.)
285
Infinite Etch Selectivity of Doped-ZnO Layers to Photoresist during CH4/H2/Ar Inductively Coupled Plasma Etching
M.H. Shin, M.S.Park, S.H.Jung, J.H.Boo, and N.-E.Lee (Sungkyunkwan University)
287
Process Window for Infinite Etch Selectivity of Silicon Nitride to ArF PR in Dual-Frequency CH2F2/H2/Ar Capacitively Coupled Plasmas
C.K. Park, C.H. Lee, and N.-E. Lee (Sungkyunkwan University)
289
Dry Etching Characteristics of LiNbO3 Crystal for Optical Waveguide Fabrication
W.J. Park1, W.S. Yang1,2, and D.H. Yoon1 (1Sungkyunkwan University, 2Korea Electronics Technology Institute)
291
Dry Etching of Magnesium Oxide Thin Films by Using Inductively Coupled Plasma for Buffer Layer of MFIS Structure
G.H. Kim and C.I. Kim (Chung-Ang University)
293
Dependence of Junction Depth of BF3 Pulse Plasma Ion Implantation on Pulse Voltages
Ji-Hyun Hur1, Gyeong-Su Keum2, Jae-Joon Oh1, Jaihyung Won2, and Jai-Kwang Shin1 (1Samsung Advanced Institute of Technology, 2Samsung Electronics)
295
Gas Feed Position Control for High-Quality mc-Si Film Deposition at High Speed in Surface Wave Plasma
Y. Hotta, T. Okayasu, Y. Takanishi, H. Toyoda, and H. Sugai (Nagoya University)
297
Height Effects of Substrate on the Uniformity of Deposition in the PECVD reactor
Young-Wan Kim and Youn-Jea Kim (Sungkyunkwan University)
299
Substrate Temperature Dependence of Deposition Rate in Anisotropic Plasma CVD of Cu
Takao Kaji1, Kazunori Koga1, Masaharu Shiratani1,Yukio Watanabe1, Tomohiro Kubota2, and Seiji Samukawa2 (1Kyushu University, 2Tohoku University)
301
Correlation between SiO2 Film Properties and Frog-Egg Defect in High Density Plasma Chemical Vapor Deposition
S.G. Koh1, J.H. Han1, J.W. Shon1, C.S. Kim1, D.B. Kang1, J.H. Yoo1, Y.H. Lee1, S.H. Baek1, S.H. Seo1, B.J. Jin2, G.S. Lee2, J.H. Kim2, J.H. Lee2, and G.S. Jung2 (1Jusung Engineering, 2Hynix Semiconductor)
303
Comparison of C4F6 and C5F8 as Source Precursor for a-C:F Film Deposition
H. Watanabe1, Y. Egashira2, and Y. Shimogaki2 (1University of Tokyo, 2Osaka University)
305
Numerical Study of Ion Deposition in Plasma CVD on Substrates with a Trench Shape
M. Ohnishi, H. Osawa, and K. Yokota (Kansai University)
307
Physical Properties of DLC Film on a Trench by Plasma CVD
H. Nozaki, M. Ohnishi, H. Osawa, T. Sugimoto, A. Mori, K. Nakamura, and K. Yokota (Kansai University)
309
Effects of Magnetic Field and Substrate Bias Voltage on DLC Films Prepared by PECVD
H. Shimada and H. Fujiyama (Nagasaki University)
311
Improved Crystallization Characteristics of ZnO Thin Film Grown onto DLC Film Used as a Buffer and Support Layer
Eung Kwon Kim, Tae Yong Lee, Yong Seob Park, Byungyou Hong, Young Sung Kim, and Joon Tae Song (Sungyunkwan University)
313
Characterization of Ultra Water-Repellent Thin Films by PECVD Method
E. Oriyama, Y.S. Yun, T. Yoshida, T. Shimazu, H. Saito, Y. Inoue, and O. Takai (Nagoya University)
315
Growth of VO2 Films with Metal-Insulator Transition on Silicon Substrates in Inductively Coupled Plasma-Assisted Sputtering
Kunio Okimura and Naotaka Kubo (Tokai University)
317
Sputter Deposition and Surface Treatment of TiO2 films for Dye-Sensitized Solar Cells using Reactive RF Plasma
H. Matsuura1, Y.M. Sung1, M. Otsubo1, C. Honda1, and H.J. Kim2 (1University of Miyazaki, 2Pusan National University)
319
PECVD Silicon Nitride and Vacuum Evaporated Magnesium Fluoride Films in Multicrystalline Silicon Solar Cells
Suresh Kumar Dhungel, M. Gowtham, Jinsu Yoo,Kyunghae Kim, and Junsin Yi (Sungkyunkwan University)
321
Properties of PECVD Silicon Nitride for the Application of c-Si Solar Cell
Jinsu Yoo, S.K. Dhungel, M. Gowtham, S.N. Ghosh, and Junsin Yi (Sungkyunkwan University)
323
Effect of Bias Voltage on Structural and Electrical Properties of ZnO Films Deposited by ECR-PECVD
M.J. Kang1, R. Tap2, S. Schoemaker2, M. Willert-Porada2, and S.Y. Choi1 (1Yonsei University, 2University of Bayreuth)
325
Control of Refractive Index and Core Shape for Silicon Nitride Waveguides Prepared by PECVD
D.H. Yoon1, S.G. Yoon1, S.J. Suh1, H. Kim, and Y.T. Kim2 (1Sungkyunkwan University, 2Samsung SDI Co., Ltd.)
327
Carbon Incorporation Process in GaAsN Films Grown by Chemical Beam Epitaxy Using MMH or DMH as N Precursor
H. Suzuki, K. Nishimura, H. S. Lee, Y. Ohshita, I. Gono, N. Kojima, and M. Yamaguchi (Toyota Technological Institute)
329
Light Illumination Induced Effects on GaAsN Thin Films Grown by Chemical Beam Epitaxy
H.S. Lee, K. Nishimura, H. Suzuki, Y. Ohshita, T. Imai, N. Kojima, and M. Yamaguchi (Toyota Technological Institute)
331
Growth Condition of AlGaN/GaN Heterostructures for Enhanced Electrical Characteristics by MOCVD
J.H. Choi1, H.K. Park1, H.J. Kang2, J. Jhin1, S. Baek1, Y.S. Kwon1, J.-H. Lee, and D. Byun1 (1Korea University, 2Epiplus)
333
The Efficacy of ECR-CVD Silicon Nitride Passivation in InGaP/GaAs HBTs
L.B. Zoccal, J.A. Diniz, I.Doi, J.W. Swart, A.M. Daltrini, and S.A. Moshkalyov (Universidade Estadual de Campinas)
335
Characterization of TiO-N Thin Films Manufactured by Sputtering with High Efficiency Cathode
J.S. Park1, T.W. Kim1, S.W. Park2, and W.S. Ahn2 (1Mirae Engineering Vacuum Division, 2Keimyung University)
337
Minimizing Plasma-Induced Charging Damage during Multi-Step Etching of Dual-Damascene Trench and Via Structures
Michael C. Kutney, Shawming Ma, Allen Zhao, Gerardo A. Delgadino, Daniel J. Hoffman, Keija Horioka, and Ashok Sinha (Applied Materials)
339
Threshold Voltage Shift of Submicron p-Channel MOSFET due to Si Surface Damage from Plasma Etching Process
G.H. Kim1, C.I. Kim1, D.P. Kim2, Y.R. Kang2, H.J. Kim3, and S.Y. Kim4 (1Chung-Ang University, 2KDG Engineering, 3Sindoricoh, 4DongbuAnam Semiconductor)
341
Electron Beam Irradiation Effects in Surface and Subsurface Regions of Various Insulating Sapphires
Bo-Hyun Lee, Tokuyuki Teraji, and Toshimichi Ito (Osaka University)
343
The Need for Three Frequencies for Truly Independent Plasma Parameter Control
Steven Shannon, Daniel Hoffman, Jang-Gyoo Yang, and Valery Godyak (Applied Materials)
345
Frequency-Dependent Characteristics of Plasma in a Dual-Frequency, 300 mm-Diameter Processing Chamber
G. Hebner1, E. Barnat1, P. Miller1, A. Paterson2, J. Holland2, T. Panagopoulos2, and T. Lill2 (1Sandia National Laboratories, 2Applied Materials)
347
Time Evolution of Electrode Voltage Distribution in Large-Area Capacitively Coupled Plasmas
Masaaki Matsukuma and Satoshi Hamaguchi (Osaka University)
349
Plasma Characteristics by Magnetic Field Effect in Linearly Extended Inductively Coupled Plasma System
Kyong Nam Kim, Mi Suk Kim, and Geun Young Yeom (Sungkyunkwan University)
351
Influence of RF Bias on Electrostatic Chuck Characteristics
G. Shim1, T. Yamauchi2, and H. Sugai1 (1Nagoya University, 2Toshiba Corporation)
353
Modeling of an Erosion Profile of Dielectric Target in an RF Magnetron Plasma for Sputter Deposition
T. Yagisawa1, S. Kuroiwa2, and T. Makabe1 (1Keio University, 2Shibaura Mechatronics)
355
Single Chamber Process for Carbon Nanotubes Growth Using Capacitive/Inductive Coupled RF plasmas
Y.M. Sung, M. Otsubo, and C. Honda (University of Miyazaki)
357
Development of a High-Durability Atmospheric DC Arc Plasmatron
J.H. Kim1, Y.S. Mok1, C.K. Choi1, V. Yu. Plaksin1, V.A. Riaby2, and H.J. Lee1 (1Cheju National University, 2General Physics Institute of the Russian Academy of Sciences)
359
Investigation of Volt-Ampere Characteristics for the DC Arc Plasmatron of High Durability
H.J. Lee1, V. Yu. Plaksin1, and V.A. Riaby2 (1Cheju National University, 2General Physics Institute of the Russian Academy of Sciences)
361
Atmospheric Plasma-Calcination of Mesoporous Tungsten Oxide Utilizing Plasma Dielectric Barrier Discharge
Pavel Baroch, Junko Hieda, Nagahiro Saito, and Osamu Takai (Nagoya University)
363
Field Emission Properties of Carbon Nanotubes Synthesized by Capillary Type Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition
Se-Jin Kyung, Maksym Voronko, Yong-Hyuk Lee, Chan-Woo Kim, June-Hee Lee, and Geun Young Yeom (Sungkyunkwan Univ.)
365
Simulation of Radio Frequency Microplasma in Ar Dielectric Barrier Discharge with Coplanar Electrodes
Fumiyoshi Tochikubo and Satoshi Uchida (Tokyo Metropolitan University)
367
Discharge Mode Characteristics of Atmospheric RF Capacitive Discharges
S.Y. Moon, D.B. Kim, J.K. Rhee, and W. Choe (Korea Advanced Institute of Science Technology)
369
Effects of Helium and Oxygen Mixing in Argon-Based Atmospheric Large Area Plasmas
J.K. Rhee, D.B. Kim, S.Y. Moon, and W. Choe (Korea Advanced Institute of Science Technology)
371
Study of Small Size Atmospheric Plasma with a Pin to Plane Electrode Configuration
D.B. Kim, J.K. Lee, S.Y. Moon, and W. Choe (Korea Advanced Institute of Science Technology)
373
< DPS2005 Young Researcher Award Winner >
A Novel Deep Etching Technology for Si and Quartz Materials
Y. Morikawa, T. Koidesawa, T. Hayashi, and K. Suu (ULVAC)
375
High Rate Deep Si Etching with SF6/O2/HBr/Ar in a Groovy ICP Reactor
T. Tsukada, M. Nomura, M. Ooya, K. Fujiwara, M. Yanagisawa, and G. K. Vinogradov (FOI Corporation)
377
Deep Si Etching for Micro Mold Fabrication
Y. Matsumoto, J. Ishihara, H. Kawata, M. Yasuda, and Y. Hirai (Osaka Prefecture University)
379
Controlling the Silicon Micro-Grass in Fabrication of a Deeply Etched Silicon Mold using Adaptive Bosch Process
M.W. Lee, C.H. Choi, K.J. Lim, S.B. Jo, S.G.Lee, S.G. Park, E.H. Lee, and B.H. O (Inha University)
381
Silicon Oxide Deposition by ECR Plasma for MEMS Applications
C. Biasotto, F.A. Boscoli, R.C. Teixeira, J.A. Diniz, A.M. Daltrini, S.A. Moshkalyov, and I. Doi (Universidade Estadual de Campinas)
383
Fabrication of Piezo-Driven Microactuator for Ink Jet Printing
Jangkwen Lee, Sanghun Shin, Pham Van So, and Jaichan Lee (Sung Kyun Kwan University)
385
Suspended Silicon Oxynitride Structures Fabricated by ECR Plasma and Wet Etching
C. Biasotto, J.A. Diniz, A.M. Daltrini, S.A. Moshkalyov, A.C.S. Ramos, and J.W. Swart (Universidade Estadual de Campinas)
387
Metal Electrode Fabrication Technologies on Non-Planar Surfaces
Ho Jung, Ik-Su Kang, Sung-Wook Jang, Byong-Jo Kwon, Chang Jin Kim, Sie-Young Choi, and Seong Ho Kong (Kyungpook National University)
389
Fabrication of Micro-Scale Optical Power Splitter Using Soft Lithographic Technique
Chul Hyun Choi, Min Woo Lee, Beom-Hoan O, Seung-Gol Lee, Se-Geun Park, and El-Hang Lee (Inha University)
391
Study on MEMS/NEMS Application Using Advanced Functional Thin Films
J.-S. Moon, J.-S. Hyun, J.-H. Park, J.W. Kim, and J.-H. Boo (Sungkyunkwan University)
393
Etching Properties of HfO Based High-K Gate Stack
W.J. Yoo (National University of Singapore)
395
Plasma Enhanced Selective Removal of HfO2 Film with Low Si Substrate Damage for High-k Dielectric Poly-Si Gate Application
Leonard Hsu, Chung Ju Lee, Arthur Chen, H.L. Meng, S.F. Tzou, and S.W. Sun (United Microelectronics Corporation)
397
< DPS2005 Young Researcher Award Winner >
Effect of SiO2 Mask on Surface Properties of Advanced Gate Stacks Using ICP of Cl2 / HBr
W.S. Hwang1, H.H. Ngu1, G. Zhang1, V.N. Bliznetsov2, and W.J. Yoo1 (1National University of Singapore, 2Institute of Microelectronics)
399
Dry Etch Processing of Multiple Gate FETs with Metal Gate Electrode
M. Demand, V. Paraschiv, D. Shamiryan, S. Beckx , W. Boullart, and S. Vanhaelemeersch (IMEC)
401
Design and Diagnostics of Atmospheric Pressure Plasma Jets
A. Schwabedissen1, M. Teschke2, J. Kedzierski2, and J. Engemann1,2 (1JE PlasmaConsult GmbH, 2University of Wuppertal)
403
Control of Substrate Surface Temperature in Millisecond Annealing Technique Using Thermal Plasma Jet
Tatsuya Okada, Seiichiro Higashi, Hirotaka Kaku,Naohiro Koba, Hideki Murakami, and Seiichi Miyazaki (Hiroshima University)
405
Microfabricated Plano-Convex Quartz Crystal Resonator using RIE
E. Sakata1, M. Esashi1, and T. Abe1,2 (1Tohoku University, 2PRESTO, JST)
407
Fabrication and Sensing Behavior of Highly Sensitive Piezoelectric Microbridge VOC Sensor
Sanghun Shin1, Joon-Shik Park2, Nae-Eung Lee1, and Jaichan Lee1 (1Sungkyunkwan University, 2Korea Electronics Technology Institute)
409
Fabrication and Characterizations of Out-of Plane Type Piezoelectric Micro Grippers Using Micro Cantilevers
Chang-Seong Jeon1,2, Joon-Shik Park1, Sang-Yeol Lee2, and Chan-Woo Moon1 (1Korea Electronics and Technology Institute, 2Yonsei University)
411
One-Dimensional Carbon and ZnO
J.M. Ting, K.H. Liao, T.L. Chou, and M.D. Chen (National Cheng Kung University)
413
Nanobiodevice: From Genomics/Proteomics to Medical Application
Yoshinobu Baba (Nagoya University)
415
Fabrication of Fast DNA Separation Nano-Pillar Chips by Plasma Etching Technique
R. Ogawa, H. Ogawa, A. Oki, S. Hashioka, and Y. Horiike (National Institute for Materials Science)
417
Fabrication of Dye Sensitized Solar Cell Using TiO2 coated Carbon Nanotubes
Tae Young Lee, P. S. Alegaonkar, and Ji-Beom Yoo (Sungkyunkwan University)
419
Rapid Growth of Dense, Aligned Single-Walled Carbon Nanotubes for Multi-Level Interconnections of Ultra-Large Scale Next-Generation Integrated Circuits
H. Nagao1, M. Hiramatsu1, H. Amano1, and M. Hori2 (1Meijo University, 2Nagoya University)
421
