November 13-14, 2007

Plasma Etching of Nanometer-Scale Self-Assembled Features

Y. Zhang (IBM)

1

Etching Assessment for an Innovative Nano-Imprint Process

J. Chiaroni1, R. Blanc2, Y. Le Cunff1, M.P. Clément2, O. Louveau2, C. Charpin1, P. Brianceau1, H. Denis1, G. Medico2, M. Heitzmann1, N. Khusnatdinov3, D. LaBrake3, J.P. Gouy2, P. Gubbini3 (1CEA/LETI-Minatec, 2STMicroelectronics, 3Molecular Imprints Inc.)

3

A New CD Reduction Process with the Next Generation Patterning System

J.O. Yoo1, H.S. Hong1, C.H. Shin1, G.J. Min1, C.J. Kang1, J.T. Moon1, S. Lee2, J.S. Kim2, R.M. Sadjadi2 (1Samsung Electronics Co., LTD., 2Lam Research Corporation)

5

A Model Analysis of Feature-Profile Evolution During Si Etching in HBr-Containing Plasmas

M. Mori1, S. Irie2, N. Itabashi1, K. Eriguchi2, K. Ono2 (1Hitachi, Ltd., 2Kyoto University)

7

Application of a Real-Time Thickness Monitor to W, TaSiN and TiN Gate Etching Using Plasma Optical Emission Interference

T. Iwakoshi, T. Ono, T. Aoyama, Y. Nara, Y. Ohji (Selete, Inc.)

9

Real Time Estimation and Control of Oxide-etch Rate Distribution Using Plasma Emission Distribution Measurements

K. Yokogawa, K. Maeda, M. Izawa (Hitachi, Ltd.)

11

< DPS2007 Best Paper Award Winner >

Plasma Diagnostic Probe for Etch Chamber Monitoring and Control

G. Delgadino, D. Keil, J. Booth, C. Lee (Lam Research Corp.)

13

Arrays of Microcavity Plasma Devices: Hybrid Non-Equilibrium Plasma/Photonic Devices for Displays and Photochemical Processing

J.G. Eden, S.-J. Park (University of Illinois)

15

Plasma Aided Micro- and Nano-Patterning: a Versatile Surface Modification Tool for Biomedical Applications

E. Sardella1,2, R. Gristina2, F. Intranuovo1, M. Nardulli1, S. Lovascio1, B.R. Pistillo1, P. Favia1,2 (1University of Bari, 2IMIP CNR)

17

Diameter-Controlled Defect-Free Si Nanostructure Using Neutral Beam Etching for Realistic Quantum Effect Devices

T. Hashimoto1, C.-H. Huang1, T. Kubota1, M. Takeguchi2, K. Nishioka3, Y. Uraoka4, T. Fuyuki4, I. Yamashita4,5, S. Samukawa1 (1Tohoku University, 2National Institute for Materials Science, 3Japan Advanced Institute of Science and Technology, 4Nara Institute of Science and Technology, 5Matsushita Electric Industrial Co., Ltd.)

19

Hydrogenated Amorphous Carbon Film Coating of PET Bottles for Gas Diffusion Barriers

N. Boutroy (SIDEL, Avenue de la Patrouille de France)

21

Temperature Dependence of Dielectric Constant of Nano-Particle Composite Porous Low-k Films Fabricated by Pulse rf Discharges with Amplitude Modulation

S. Iwashita, M. Morita, K. Koga, M. Shiratani (Kyushu University)

23

C5F8 Plasma Chemistry Database

S.-Y. Kang, P. Ventzek, I. Sawada, M. Kawakami, S. Segawa (Tokyo Electron Ltd.)

25

The Heat Flux to the Substrate During Inductively Coupled Plasma (ICP) Sputtering

J.N. Kim, H.Y. Lee, J.J. Lee (Seoul National University)

27

Production and Transport of Cu and CuCl Radicals in Cu Film Deposition by Metal Chloride Reduction Plasma CVD

K. Sasaki1, K. Furuta1, Y. Tomita2, H. Sakamoto2 (1Nagoya University, 2PhyzChemix Corporation)

29

The Efficiency of CIGS Solar Cells Influenced by Resistively and Thickness for Window Layer

J.-S. Hur1, C.-S. Son2, J.-B. Song1, J.H. Yun3, K.H. Yun3, I.-H. Choi1 (1Korea University, 2Silla University, 3Korea Institute of Energy Research)

31

Performance Improvement of ZnO Based TFTs by Ion Beam Irradiation

D.-Y. Moon, Y.-K. Moon, J.-W. Park (Hanyang University)

33

Chemical Oxide Removal for Contact Clean in 58nm Flash Device

C.-H. Chien, Y.M. Liao, C.K. Chen, P.-C. Yu, C.N. Wu, M. Hiroshi, C.C. Cho (Powerchip Semiconductor Corp.)

35

Alternative Photoresist Removal Process to Minimize Damage of Low-k Material Induced by Ash Plasma

Q.T. Le, E. Kesters, M. Lux, M. Claes, G. Vereecke, P.W. Mertens (IMEC)

37

Removal of Sidewall Scallops by Wet Treatments after ICP Etching of Si Deep Vias

Y.-D. Lim, C.-H. Ra, S.-H. Lee, W.J. Yoo (Sungkyunwan University)

39

Effect of Plasma Post-Treatment on Titanium Dioxide Deposited by Plasma Enhanced Atomic Layer Deposition

W.-S. Kim, M.-G. Ko, T.-S. Kim, J.-W. Park (Hanyang University)

41

Crystal Structures of Copper Phthalocyanine on C60 (111) Surface Grown By Molecular Beam Epitaxy

H. Suzuki, Y. Yamashita, N. Kojima, M. Yamaguchi (Toyota Technological Institute)

43

Direct Micro Fabrication of Flexible Copper Clad Laminate Using a 355 nm UV Laser

J.H. Kim, J.S. Ko, K.R. Kim, Y.K. Jeong, B.S. Shin (Pusan National University)

45

Numerical Simulation of Dynamics of Multi-Component Gas in MWPCVD for the Synthesis of Diamond Crystals

H. Yamada, A. Chayahara, Y. Mokuno, S. Shikata (National Institute of Advanced Industrial Science and Technology (AIST))

47

Corrosion Behavior of CrN Coated on 316L SS in Simulated Cathodic Environment of PEM Fuel Cell

N.N. Dang, J.G. Kim (Sungkyunkwan University)

49

Synthesis of Proton Exchange Membranes by a Plasma Polymerization Technique

Z. Jiang, Y. Meng (Chinese Academy of Science)

51

Phase-Angle Difference Dependent Deposition and Etching in VHF-CCP

D. Sung, S. Jeong, V. Volynets, S. Kim, J. Lee, M. Han (Samsung Electronics)

53

SOD Oxide Etch Back Study for 50nm Node Flash Device

C.L. Tai, Y.M. Liao, H.-L. Lin, C.N. Wu, M. Hiroshi, C.C. Cho (Powerchip Semiconductor Corp.)

55

Rework Issues in Real Device Application of Multi-function Hard Mask Process

S.-K. Lee, S.-K. Kang, K. Lee, G. Lee, J.-H. Sun, W. Kim, S. Moon, J. Kim (Hynix Semiconductor, Inc.)

57

Analysis of the Characteristic Parameters Used for Selection of Industrial Ashers

D.L. M?zerette, K. Tanimura, G.K. Vinogradov (FOI Corporation)

59

Independent Gas Injection in Dielectric Etch Process Chamber to Improve Process Uniformity

K. Bera, R. Lindley, K. Doan, S. Anderson (Applied Materials, Inc.)

61

Fabrication of Sputtered Mo Gated Silicon Field Emitter Arrays by using the Condition of Silicon Dry Etch

M.H. Ahn, S.J. Kwon, J.S. Kim, E.S. Cho (Kyungwon University)

63

Argon-Hydrogen Plasma Cleaning Effect on Electroless Ni Plating for Under Bump Metallurgy of Solder Bump

A. Ikeda, K. Kajiwara, A. Sakamoto, R. Hattori, H. Kuriyaki, Y. Kuroki (Kyushu University)

65

Effect of Deposition Parameters on Properties of Indium Zinc Oxide Thin Films for Application to Flexible Dye Sensitized Solar Cell Prepared at Low Temperature

Y.L. Li, S.R. Min, H.N. Cho, C.W. Chung (lnha University)

67

Development of Si Surface Structures for Application in Solar Cells Production Using a High Durability Arc Plasmatron

V.Y. Plaksin1, H.J. Lee1, C.S. Yang2, J.H. Kim1 (1Cheju National University, 2Choosong Engineering)

69

Surface Treatment of Polymers Using Argon/Oxygen Mixture Plasmas Sustained with Multiple Internal Antenna Units

K. Takenaka1, Y. Setsuhara1, K. Nishisaka2, A. Ebe2, Y.-M. Kim3, J.G. Han3 (1Osaka University, 2EMD Corporation, 3SungKyunKwan University)

71

Control Capabilities of RF Plasmas Sustained with Multiple Low-Inductance Antenna Modules

Y. Setsuhara1, K. Takenaka1, K. Nishisaka2, A. Ebe2 (1Osaka University, 2EMD Corporation)

73

The Dielectric Constant Changes of a-SiC:H Films Deposited by Remote-PECVD System Using HMDS Precursor and C2H2 Dilution Gas

S.H. Cho1, D.J. Choi1, T.S. Kim2 (1Yonsei University, 2Korea Institute of Science and Technology)

75

High Frequency CCP Etching of Soft Materials at Low Ion Energy

E.A. Hudson, A. Marakhtanov, K. Takeshita, O. Turmel (Lam Research Corp.)

77

Effects of Plasma Chemistry on Low-k Film Properties

D. Kim1,2, A.M. Urbanowicz1, G. Mannaert1, H. Struyf1, W. Boullart1, K.J. Min2, C.J. Kang2, J.T. Moon2, M.R. Baklanov1 (1IMEC, 2Samsung Electronics)

79

Environmentally Harmonized Gas Chemistry for Low-Damage, Highly Selective Low-k Etching

H. Ohtake1, Y. Ichihashi1, E. Soda2, S. Saito2, S. Samukawa1 (1Tohoku University, 2Semiconductor Leading Edge Technologies Inc.)

81

Study of Porous Low-k Films Modification and Selectivity to Etch Stop Layer in Fluorocarbon-Based Plasmas: Application to Dual Damascene Integration Scheme Using Metallic Hard Mask

N. Posseme1, T. David1, T. Chevolleau2, C. Gerbelot1, F. Bailly3, A. Le Gouil3 (1CEA/LETI, 2CNRS/LTM, 3STMicroelectronics)

83

Plasma-Induced Damage to Porous Low-k Films During Dry Etching

Y. Iba, A. Hasegawa, M. Nakaishi (Fujitsu Limited)

85

Metallic Versus Organic Hard Mask Strategies for Advanced Dielectric Trenches Patterning

T. Chevolleau1, M. Darnon1, T. David2, D. Perret3, J. Torres4, O. Joubert1 (1CNRS/LTM, 2CEA/LETI-Minatec, 3Rohm and Haas Electronic Materials SAS, 4STMicroelectronics)

87

Mechanism of Ashing Damage in UV-Cured Ultralow-k Film

Y. Fujiwara1, S. Hashii2, K. Yonekura1, K. Goto1, M. Matsuura1, N. Fujiwara1 (1Renesas Technology Corp., 2Renesas Semiconductor Engineering Corp.)

89

Control of Organic Low-k Etching in 100MHz Capacitively Coupled H2/N2 Plasma Employing a Radical Sensor

H. Yamamoto1, S. Takahashi1,2, R. Kawauchi3, S. Den2, S. Takashima1, M. Sekine1, M. Hori1 (1Nagoya University, 2Katagiri Engineering Co., Ltd., 3COM Electronics Development Co.,Ltd.)

91

High Performance Etching of Porous Low-k SiOCH Employing an Alternative Fluorocarbon Gas

E. Shibata1, H. Okamoto2, M. Hori1 (1Nagoya University, 2Asahi Glass Co., Ltd.)

93

Surface Characterization and Etching of CoWB Used as a Self Aligned Barrier for Advanced Dual Damascene Structures

F. Bailly1,2,3, T. David2, D. Eon3, R. Bouyssou3, T. Chevolleau3, O. Joubert3, C. Cardinaud4 (1STMicroelectronics, 2CEA/LETI-Minatec, 3CNRS/LTM, 4CNRS/IMN)

95

Effect of C2F6 Gas on Etch Profile of Magnetic Tunnel Junction Stack in Cl2/Ar and HBr/Ar Gas Mixtures

S.R. Min1, H.N. Cho1, Y.L. Li1, K.W. Kim2, S.A. Seo2, C.W. Chung1 (1lnha University, 2Samsung Advanced Institute of Technology)

97

RIE Process of Transition-Metal Oxide for RRAMTM Device

F. Takano1, H. Shima1, H. Muramatsu1, Y. Kokaze2, Y. Nishioka2, K. Suu2, H. Kishi3, N.B. Arboleda Jr.3, M. David3, T. Roman3, H. Kasai3, H. Akinaga1 (1National Institute of Advanced Industrial Science and Technology (AIST), 2ULVAC Inc., 3Osaka University)

99

Etch Selectivity Control in Deep Reactive Ion Etching and the Application to Improve Acoustic Performance

H. Kato, H. Kishi, M. Nishizawa, T. Abe (Tohoku University)

101

MEMS-Based IR Spectrometer Composed of Grating and Bolometer Array

J.C. Yang, G.J. Lee, H. Jung, S.H. Kong (Kyungpook National University)

103

Effect of the ICP Power on the Structure and Thermal Stability of Ta2N Diffusion Barriers for Cu Metallization

S.M. Kim, G.R. Lee, J.J. Lee (Seoul National University)

105

Preparation of Indium Zinc Oxide (IZO) Thin Film at Room Temperature by Using Facing Targets Sputtering Method

S.M. Kim, Y.S. Rim, K.H. Kim (Kyungwon University)

107

Preparation of Ag/ZnO Multilayer by Using Facing Targets Sputtering System

Y.S. Rim, S.M. Kim, H.W. Choi, K.H. Kim (Kyungwon University)

109

Influence of RF Power on the Film Properties of Aluminum Doped Zinc Oxide Deposited by Inductively Coupled Plasma Assisted Sputtering

Y. Matsuda, T. Shinbasaki, S. Iwai, M. Shinohara (Nagasaki University)

111

Low Temperature Sintering of ITO Thin Film Using Split Gliding Arc Plasma

Y. Ito1, H. Shiki1, H. Takikawa1, T. Ootsuka2, E. Usuki3, T. Okawa4, S. Yamanaka4, T. Sakakibara5 (1Toyohashi University of Technology, 2Sumitomo Osaka Cement Co., Ltd., 3Sintobrator Ltd., 4Daiken Chemical Co., Ltd., 5Gifu National College of Technology)

113

Inductively Coupled Plasma Etching of AZO and ZnO in Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Chemistries

H.J. Lee, H.Y. Jung, D.Y. Kim, D.-G. Yoo, J.-H. Boo, N.-E. Lee (Sungkyunkwan University)

115

Atmospheric Pressure Plasma Ashing for Display Manufacturing

C.H. Yi, T.W. Kim, K.H. Kim, W.S. Kang, J.H. Kim (LG Production Research Institute)

117

Characteristics of ZnO Thin Film Deposited by Atomic Layer Deposition Method

S. Jang1, D. Byun1, J.-S. Hur1, C.-S. Son2, I.-H. Choi1 (1Korea University, 2Silla University)

119

Etch Characteristic of Gallium Indium Zinc Oxide (GIZO) Thin Films Using Inductively Coupled Plasma Reactive Ion Etching in Chlorined Based Gases

H.N. Cho1, S.R. Min1, H.J. Bae2, J.H. Lee2, C.W. Chung1 (1Inha University, 2Samsung Advanced Institute of Technology)

121

Restoration of the Parylene-C Dielectric Films Surface after O2 Plasma Treatment

D.A. Shutov1, S.-Y. Kang2, K.-H. Baek2, K.S. Suh2, B.-G. Yoo3, C.-W.J. Lee3, H.-H. Park4, K.-H. Kwon3 (1Ivanovo State University of Chemistry & Technology, 2ETRI, 3Korea University, 4Yonsei University)

123

A Study on the Discharge Characteristics Depend on Variable Annealing Condition for High Efficiency PDP

K.H. Kim, Y.J. Kim, S.J. Kwon (Kyungwon University)

125

A Study of ITO Etching Characteristic Depending on Variation Pulse Repetition Rate of the YVO4 Laser for AC PDP

K.H. Kim, S.H. Im, S.J. Kwon (Kyungwon University)

127

Characteristics of Photo Leakage Characteristics of a-Si:H TFT Caused by Illuminations from Various Light Sources

S.J. Hong, S.J. Kwon, E.S. Cho (Kyungwon University)

129

Hybrid Laser Cutting for Flat Panel Display Glass

K.-R. Kim, K.-H. Kim (Pusan National University)

131

Effect of Nanostructure on the Hardness and Thermal Stability of Ti-Al-B-N Coating

J.-Y. Cho1,2, H.-T. Jeon2, J.-K. Park1, Y.-J. Baik1 (1Korea Institute of Science and Technology, 2Hanyang University)

133

Si Nanoparticle Formation Using SiH4 Pyrolysis at Ambient and Low Pressure Conditions

K. Kim1, D. Woo1, K. Nam1, Y. Kang2, T. Kim2 (1Sungkyunwan University, 2Samsung Advanced Institute of Technology)

135

Adhesion and Growth of Fibroblast Cell on a Micropatterned Super-Hydrophobic/Super-Hydrophilic Surface

Y. Miyahara, T. Ishizaki, N. Saito, O. Takai (Nagoya University)

137

Measurement of Electron Temperature and Density of the Coaxial Focused Plasma in Accordance with Insulator Lengths for Extreme Ultraviolet (EUV) Lithography

Y.J. Hong, M.W. Moon, K.B. Song, G. Cho, H.M. Shin, E.H. Choi (Kwangwoon University)

139

Uniformity of SiO2 Film Deposited Using Monopole Antenna-Excited Plasma

K. Takizawa, Y. Mori, N. Miyatake, K. Murata, M. Konishi (Mitsui Engineering and Shipbuilding Co., Ltd.)

141

Production of Large-Area and Uniform Surface Wave Plasma Along Linear Parallel Waveguides

Y. Takanishi1, H. Endo1, T. Ishijima1, H. Toyoda1, H. Sugai2 (1Nagoya University, 2Chubu University)

143

Energetic Ion and VUV Beam Interaction with Photoresist Polymers

D. Graves1, D. Nest1, S. Engelmann1, R. Bruce1, T. Kwon1, R. Phaneuf1, G. Oehrlein1, Y. Bae2, C. Andes2, E. Hudson3 (1University of California, 2Rohm and Haas Electronic Materials, 3Lam Research Corp.)

145

Novel Hardening Treatment of Spin-On Carbon Hard Mask by Ion Implantation

M. Tadokoro1, K. Yonekura1, N. Fujiwara1, T. Ishibashi1, Y. Ono1, T. Hanawa1, T. Matsunobe2, K. Matsuda2 (1Renesas Technology Corp., 2Toray Research Center Inc.)

147

Study of SOC Degradation in SiO2 Etching Using S-MAP

T. Kaminatsui, K. Kikutani, T. Ohashi, I. Sakai, H. Hayashi, M. Hasegawa, T. Ohiwa (Toshiba Corporation Semiconductor Company)

149

Impact of Ar Ion Implantation into Spin-On Carbon Hardmask for Fine Patterning

M. Shinohara, T. Maruyama, R. Ohnuki, R. Yoshifuku, T. Fukunaga, N. Fujiwara (Renesas Technology Corp.)

151

Fabrication of High Performance Organic Light-Emitting Devices

J. Kido (Yamagata University, Research Institute for Organic Electronics)

153

Surface Reactions and Irradiation-Damages of Thin Film Transistor Resist Ashing Process in Atmospheric Plasma

T. Sato1, A. Ueno1, T. Yara2, E. Miyamoto2, Y. Uraoka3, S. Samukawa4 (1Tohoku University, 2Sekisui Chemical Co. Ltd., 3Nara Institute of Science and Technology, 4Tohoku University)

155

< DPS2007 Young Researcher Award Winner >

Formation of Low-Defect-Concentration Polycrystalline Si Films by Thermal Plasma Jet Crystallization Technique

T. Yorimoto1, S. Higashi1, H. Kaku1, T. Okada1, H. Murakami1, S. Miyazaki1,T. Matsui2, A. Masuda2, M. Kondo2 (1Hiroshima University, 2National Institute of Advanced Industrial Science and Technology)

157

Irradiation of a High-Density CF4/O2 Plasma onto Al2O3 and Y2O3 Surfaces

K. Miwa, N. Takada, K. Sasaki (Nagoya University)

159

Infrared Spectroscopic Study of Behavior of Hydrogen in Silicon

M. Shinohara, T. Inayoshi, Y. Matsuda, H. Fujiyama (Nagasaki University)

161

Space Resolved Density Measurements in Reactive Plasmas Using Optical Probe for Atomic Radical Monitoring

S. Takashima1, S. Takahashi2, H. Kano3, K. Yamakawa2, S. Den2, M. Sekine1, M. Hori1 (1Nagoya University, 2Katagiri Engineering Co., Ltd., 3NU-EcoEngineering Co., Ltd.)

163

Modeling of Polymer Growth on Ion-Bombarded Chamber Wall in Fluorocarbon Etching Plasmas

K. Nakamura1, K. Kumagai1, K. Oshima2, K. Nagahata2, T. Tatsumi2 (1Chubu University, 2Sony Corporation)

165

Influence of Insulator Materials on Electron Temperature and Density of the Coaxial Focused Plasma for EUV (Extreme Ultraviolet) Lithography

M.W. Moon, Y.J. Hong, K.B. Song, G.S. Cho, H.M. Shin, E.H. Choi (Kwangwoon University)

167

Study of InP Etching in Inductively Coupled Cl2-H2 Plasma by Optical Emission Spectroscopy: Influence of Reactor Wall State

L. Gatilova, S. Bouchoule, S. Guilet, G. Patriarche, P. Chabert (CNRS)

169

Development and Characteristics of Nitrogen Radical Beam

Y. Hara1, S.Takashima1, K. Yamakawa2, S. Den2, H. Kano3, H. Toyoda1, M. Sekine1, M. Hori1 (1Nagoya University, 2Katagiri Engineering, 3NU-Eco Engineering)

171

Defects in Yttria-Stabilized Zirconia Induced by Irradiation of Ultraviolet Photons

T. Morimoto, M. Takase, T. Ito, H. Kato, Y. Ohki (Waseda University)

173

Analysis of Methane Film on Metal Oxide Surface Treated by Proton Beam Irradiation

J.-G. Lee, E. Kim, J. Jeon, J.-Y. Kim (Hanyang University)

175

Study of the Effect of Electron-Beam Irradiation on Natural Type Ia Diamond

J.-G. Seo, J.-H. An, J.-W. Park (Hanyang University)

177

Evaluation of Plasma Damages on Organic Low-k Film due to VUV Light, UV Light, Radicals and Ions

S. Uchida1, S. Takashima1, M. Sekine1, M. Fukasawa2, K. Ohshima2, K. Nagahata2, T. Tatsumi2, M. Hori1 (1Nagoya University, 2Sony Corporation)

179

Synergy Effect of Particle and Ultraviolet Radiations from Capacitively Coupled RF Argon Plasmas on n-GaN Etching Damage

R. Kawakami1, T. Inaoka1, T. Mukai2 (1The University of Tokushima, 2Nichia Corporation)

181

Laser Induced Surface Damage Studies on Nonlinear Optical Crystals

S. Dhanuskodi1, S. Manivannan1, S.K. Tiwari2, J. Philip3, K. Kim4, J. Yi4 (1Bharathidasan University, 2Raja Ramanna Centre for Advanced Technology, 3Cochin University of Science and Technology, 4Sungkyunkwan University)

183

Study on Defect States in GaN Epi-Layer Induced by Irradiation of High Energy Electron

L. Ha1, D.U. Lee1, J.S. Kim1, E.K. Kim1, B.C. Lee2, D.K. Oh3, K.-S. Lee3, S-B. Bae3 (1Hanyang University, 2Korea Atomic energy Research Institute, 3Electronics and Telecommunications Research Institute)

185

Grafting Long PAA Membrane on PTFE Panel by Plasma Technique

Y. Lan1, Q.L. You2, S.Z. Zhang1, C. Cheng1, S.D. Fang1, G.H. Ni1, Y.D. Meng1 (1Chinese Academy of Science, 2Wuhan University of Technology)

187

Microcrystalline Thin Film Deposition by Surface Wave Excited Plasma at 2.45 GHz

T. Hayashi1, Y. Takanishi1, H. Toyoda1, H. Sugai2 (1Nagoya University, 2Chubu University)

189

A Numerical Study on the Gas Phase Dynamics of the HVOF Thermal Spray

J.-S. Baik, Y.-J. Kim (Sungkyunkwan University)

191

Effects of Residual Carbon and Hydrogen Atoms on Electronic Property of GaAsN Grown by Chemical Beam Epitaxy

H. Suzuki, K. Nishimura, K. Saito, T. Hashiguchi, Y. Ohshita, N. Kojima, M. Yamaguchi (Toyota Technological Institute)

193

Reduction of Silicon Recess and Control of Poly-Si Profile in CD 30 nm Poly-Silicon Gate Etching

N. Yasui, K. Kuwahara, M. Sakaguchi, S. Watanabe (Hitachi High-Technologies Corporation)

195

Study of Nanoscale Si-Fin Pattern Etching by Cl2-Based Neutral Beam Etching System

B.J. Park1, S.W. Kim1, S.K. Kang1, G.Y. Yeom1,2 (1Sungkyunkwan University, 2The National Program for Tera-Level Devices)

197

Sheath Voltage Estimate for ICP Etcher by Impedance Analysis

H. Kawata, M. Yasuda, Y. Hirai (Osaka Prefecture University)

199

Etching Characteristics and Mechanism of InP in Inductively Coupled HBr/Ar Plasma

H.W. Lee1, M. Kim2, N.-K. Min2, A. Efremov3, K.-H. Kwon2 (1Hanseo University, 2Korea University, 3Ivanovo State University of Chemistry & Technology)

201

Study on the Charge Trap Characteristics of Al2O3/ La2O3/Al2O3 Multi-Layer Films for Non-Volatile Memory Application

H.J. Kim, S.H. Cho, D.J. Choi (Yonsei University)

203

Optical AlxTi1-xOy Films Grown by Plasma Enhanced ALD

J.W. Lim, S.J. Yun, H.T. Kim (Electronics and Telecommunications Research Institute)

205

Effect of Thermally Induced Interface Scattering on Flash Memory Properties

G. Zhang, S.-H. Lee, W.J. Yoo (Sungkyunkwan University)

207

Surface Analyses Studies of Poly-Si/Metal Gates Etched in SF6/CH2F2 Based Plasmas

O. Luere1, L. Vallier2, O. Joubert2, T. Lill3 (1Freescale Semiconducteurs Centre de recherche Crolles SAS, 2CNRS/LTM, 3Applied Materials)

209

Floating Gate Etch Process with High-k Dielectric in Standard Etch Equipment

D. Humbird, S.J. Liu, S. Gangadharan, A.G. Thorsness (Lam Research Corporation)

211

Metal Gate Hi- Etch Process Challenges and Production-Worthy Solutions

Y. Kimura, R. Balasubramanian, J. Ruiz, G. Kamarthy, A. Miller, H. Singh, V. Vahedi (Lam Research Corporation)

213

Effect of O2 Gas During Inductively Coupled Cl2/O2 Plasma Etching of Mo and HfO2 for Gate Stack Patterning

H.Y. Jung1, H.J. Lee1, D.Y. Kim1, J.H. Park2, C.Y. Lee3, J. Ahn4, J.G. Lee3, N.-E. Lee1 (1Sungkyunkwan University, 2Hanyang University, 3Kookmin University, 4Hanyang University)

215

Tungsten Alloy Etch Study in Cl2/O2 Based Chemistry for Sub 45nm Metal Gate

T. Morel1, S. Barnola2, O. Joubert3 (1STMicroelectronics, 2CEA-Leti, MINATEC, 3LTM-CNRS)

217

Electrical and Physical Characterization of OTFTs by Using Organic-Inorganic Hybrid Gate Dielectric

S.-J. Cho, I.-S. Bae, Y.G. Seol, N.-E. Lee, J.-H. Boo (Sungkyunkwan University)

219

White Organic Light-Emitting Diodes Using Red and Blue Phosphorescent Materials

J.H. Park, G.Y. Kim, S.J. Lee, J.H. Seo, J.H. Seo, Y.K. Kim (Hongik University)

221

Evaluation of Reliability of Transparent SiOCH by Electrochemical Methods

N.N. Dang, J.G. Kim, D.J. Kim, N.E. Lee (Sungkyunkwan University)

223

Electrical and Optical Properties of Blue Organic Light-Emitting Devices with Doped or Undoped Emitting Layers

H.S. Bang1, D.C. Choo1, T.W. Kim1, J.H. Park2, J.H. Seo2, Y.K. Kim2 (1Hanyang University, 2Hong-ik University)

225

Toward Saturated Red Phosphorescence: New Iridium Complexes Containing 2,3-Diphenylquinoxaline Ligands

S. Ahn, J. Seo, K.W. Kim, Y. Ha (Hongik University)

227

A Study on the Characteristics of White Organic Light-Emitting Diodes Using Heteroleptic Ir Complexes for Green and Red Phosphorescence

J.H. Seo, Y.K. Kim, Y.S. Kim (Hongik University)

229

Efficiency Variations due to the Thickness of the Lithium Quinolate and Al Mixed Layer Acting as an Electron Injection Layer in Organic Light-Emitting Devices

H.M. Cha1, D.C. Choo1, T.W. Kim1, J.H. Park2, J.H. Seo2, Y.K. Kim2 (1Hanyang University, 2Hong-ik University)

231

Heteroleptic Iridium-Trischelate Complexes for White OLEDs

I.J. Kim, Y.S. Kim (Hongik University)

233

Synthesis and Photophysical Studies of Heteroleptic Tpy-Based Iridium Complexes for Blue OLEDs

S.-C. Lee, Y.S. Kim (Hongik University)

235

Efficiency Variations in Organic Light Emitting Devices due to the Existence of the 2,3,5,6-Tetrafluoro-7,7,8, 8-Tetracyano -Quinodimethane Doped 4,4',4-Tris(N-(2-Naphthyl)-Nphenylamino)-Triphenylamine Hole Transport Layer

S.H. Baek1, D.C. Choo1, T.W. Kim1, J.H. Park2, J.H. Seo2, Y.K. Kim2 (1Hanyang University, 2Hong-ik University)

237

Efficiency Enhancement and Color Stabilization in Organic Light-Emitting Devices Utilizing a Fullerene and a Polymer Composite Layer Acting as a Hole Transport Layer

S.M. Seo1, D.C. Choo1, T.W. Kim1, S.J. Lee 2, J.H. Park 2, Y.K. Kim2 (1Hanyang University, 2Hong-ik University)

239

A White OLED Based on (POB)2Ir(pic) as Red Emitting Layer

D.-E. Kim1, B.-S. Kim1, B.-J. Lee2, Y.-S. Kwon1 (1Dong-A University, 2Inje University)

241

A Cross-Talk Method to Analyze Laser Patterned Bus Electrodes in an Ac-type Plasma Display Panel

S.I. Ahn, K.H. Kim, Z.H. Li, H.S. Han, S.J. Kwon (Kyung Won University)

243

A Study on the Relationship of Address Delay Time and Various Reset Ramp Waveforms in AC PDP

Z.H. Li, S.J. Kwon (Kyung Won University)

245

Correlation between the Secondary Electron Emission Coefficient of MgO Protective Layer and Driving Characteristics in AC-PDP

C.G. Son, E.Y. Park, S.S. Lee, S.H. Hong, S.J. Jung, G. Cho, E.H. Choi (Kwangwoon University)

247

Laser Micromachining of CNT/Fe/Al2O3 Nanocomposites

K.R. Kim1, K.H. Kim1, Y.H. Choa2, S.T. Oh3, S.H. Cho4, B.H. Yoo4, B.S. Shin1, J.H. Kim1, Y.K. Jeong1 (1Pusan National University, 2Hanyang University, 3Seoul National University of Technology, 4Korea Institute of Machinery & Materials)

249

Modification of Carbon Nanotubes Templates Using Femtosecond Laser Pulses

W.S. Chang, B.H. Yoo, Y.Y. Bang, S.H. Cho (Korea Institute of Machinery and Materials)

251

Growth of Carbon Nanowalls Using Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition

T. Hishikawa1, M. Hiramatsu1, M. Hori2 (1Meijo University, 2Nagoya University)

253

Oxidation of Amorphous Carbon Films by Ultraviolet Light Irradiation and Thermal Annealing

H. Kinoshita, K. Sakurai (Shizuoka University)

255

Mechanical Property of a Composite Material of Carbon Nanoball and Polymer

T. Ito, T. Ishizaki, N. Saito, O. Takai (Nagoya University)

257

DBD Plasma Reduction of NOx and Soot in Diesel Engine Emissions

V.Y. Plaksin, V.A. Ryaby, H.J. Lee, O.V. Penkov (Cheju National University)

259

Plasma Activation of Oxide Ceramics Surface for Hydrogen Production by Water Vapor Decomposition

Y. Yamaguchi1, T. Ishijima1, H. Toyoda1, H. Sugai2 (1Nagoya University, 2Chubu University)

261

Uniformity Improvement by Controlling Boundary Conditions in a Very High Frequency, Capacitively Coupled Etcher

M.C. Kutney, D.J. Hoffman, M.L. Miller, S.C. Shannon, R.A. Lindley (Applied Materials, Inc.)

263

Sustainment of Plasma Density by a Low Magnetic Field in a Dual-Frequency Capacitively Coupled Plasma

D.H. Kim, C-M. Ryu, S.H. Lee, J.K. Lee (Pohang University of Science and Technology)

265

PIC-MCC Simulation of Negative DC Bias Effect on Surface-Wave Plasma Parameters

A. Musha, Y. Kudo, S. Kogoshi (Tokyo University of Science)

267

PIC-MCC Simulation of Higher Density Surface-Wave Plasma

A. Musha, Y. Kudo, S. Kogoshi (Tokyo University of Science)

269

Dependence of Plasma Density on Air Gap Length of Resonant Cavity in Surface-wave Plasma Source

Y. Yoshioka, Y. Hatazaki, J. Tamura, Y. Kudo, S. Kogoshi (Tokyo University of Science)

271

Etching Characteristics of AT Cut Quartz Crystal in Open-Air Type Plasma CVM Process

K. Ueno1, Y. Oshikane1, M. Shibahara2, K. Yamamura1 (1Osaka University, 2Hyogo Prefectural Institute of Technology)

273

Bacterial Inactivation by Atmospheric Pressure DBD Plasma Jet

S. Deng, C. Cheng, G. Ni, H. Chen, Y. Meng (Chinese Academy of Science)

275

Metrology of Line-Edge Roughness: Impact on Device Performance

A. Yamaguchi1, H. Kawada2, T. Iizumi2 (1Hitachi, Ltd., 2Hitachi High-Technologies Corp.)

277

Towards a Better Understanding of the Mechanisms Involved in the HBr Cure Plasma Treatment Applied to 193 nm Photoresist in Gate Patterning Processes

E. Pargon1, M. Martin1, A. Bazin2, A. Rigard1, J. Foucher3, O. Joubert1 (1CNRS/LTM, 2STMicroelectronics, 3CEA/LETI - Minatec)

279

Model-Based Optimization of Gate-CD Distribution within a Wafer

J. Tanaka1, S. Kanno1, M. Kurihara1, M. Izawa1, Y. Nakahara2, K. Matsumoto2, H. Arai2, K. Okamoto2, T. Maruyama2, N. Fujiwara2 (1Hitachi, Ltd., 2Renesas Technology Corp.)

281

Selective Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas without rf Biasing

Y. Ueda, K. Nakamura, D. Hamada, M. Yoshida, K. Eriguchi, K. Ono (Kyoto University)

283

< DPS2007 Young Researcher Award Winner >

Reducing Damage to Si Substrates During Gate Etching Processes

T. Ohchi1, S. Kobayashi1, M. Fukasawa1, K. Kugimiya1, T. Kinoshita1, T. Takizawa2, S. Hamaguchi2, Y. Kamide1, T. Tatsumi1 (1Sony Corp., 2Osaka University)

285

Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies

Y. Nakakubo, Y. Ueda, M. Yoshida, D. Hamada, M. Kamei, K. Eriguchi, K. Ono (Kyoto University)

287

Etch of Yb-Doped Poly Gates to Achieve Low-Vt Ni-FUSI CMOS

M. Demand, V. Paraschiv, D. Shamiryan, A. Veloso, C. Vrancken, S. Brus, W. Boullart (IMEC)

289

Etch Profile Control of W/TaSiN, TiN/HfSiON Full Metal Gate

T. Ono, T. Aoyama, Y. Nara (Semiconductor Leading Edge Technology Inc.)

291