Haruhisa Abe

Keizo Suzuki

Development of Large Area Materials Processing Technologies:High Frequency CCPs for Microelectronics to Web Processing of Polymers

Y. Yang, M. Wang, J. Shoeb, M.J. Kushner (Univ. of Michigan)

Effects of Inductively Coupled Plasma and Substrate Control Parameters on 193 nm Photoresist Roughening

M.J. Titus, D.B. Graves (Univ. of California, Berkeley)

Analysis of Plasma-Wall Reactions using Virtual OES Signal during Dielectric Etching

N. Kuboi, M. Fukasawa, A. Kawashima, K. Oshima, K. Nagahata, T. Tatsumi (Sony Corp.)

EEDf of the DC+RF Hybrid and its Effects on Etching Process

L. Chen, L. Xu, M. Funk (Tokyo Electron America, Inc.)

Cylinder Rod Surface Coating using Sputtering Deposition Method with Modulated Magnetic Field

H. Kawasaki, K. Shibahara, T. Ohshima, Y. Yagyu, Y. Suda (Sasebo National College of Technology)

Investigation of the Scalability of TiN Barrier Layer for Advanced Si-Processing

G. Zhang, W.J. Yoo (Sungkyunkwan Univ.)

Chemical Sputtering of Chlorinated GaN

K. Harafuji¹, K. Kawamura² (¹Ritsumeikan Univ., ²Tokyo Inst. of Technology)

Effect of Ar/O₂ Ion-beam Treatment on the Interfacial Adhesion and Chemical Reaction between Sputter-deposited Cu film and FR-4 Substrate

K.-J. Min¹, S.-C. Park¹, G.-H. Lee², K.-W. Lee³, J.-D. Kim³, D.-G. Kim², Y.-B. Park¹ (¹Andong National Univ., ²Korea Inst. of Materials Science, ³Amkor Technology Korea Inc.)

Effect of Bonding Temperature and Post-Annealing Conditions on Cu-Cu Bonding Quality for 3-D IC Integration

E.-J. Jang¹, J.-W. Kim1, B. Kim², T. Matthias2, S. Hyun³, H.-J. Lee³, Y.-B. Park¹ (¹Andong National Univ., ²EV Group, ³Korea Inst. of Machinery & Materials)

Reduction of Fluorinated Al₂O₃ by Irradiating H₂ and O₂ Plasmas

K. Miwa, N. Takada, K. Sasaki (Nagoya Univ.)

Chamber Surface Control for Process Stability

Y. Chiba, T. Matsumoto, M. Terahara, H. Kokura, F. Harada, A. Hasegawa (Fujitsu Microelectronics Ltd.)

Effects of Argon Plasma Surface Modification on Peel Strength of Woven Type Ultra High Molecular Weight Polyethylene

C.Y. Huang¹, J.Y. Wu¹, S.K. Lin¹, C.S. Tsai¹, K.N. Chen², J.T. Yeh³ (¹Tatung Univ., ²Tamkang Univ., ³National Taiwan Univ. of Science and Technology)

Effect of Surface Roughness on Secondary Electron Emission of Diamond in Ne Plasma

T. Misu, S. Ono, M. Goto, T. Arai (Kanagawa Inst. of Technology)

Investigation of Photoresist Surface Modified Layer by Fluorocarbon Ion Bombardment

T. Takeuchi¹, M. Sekine¹, H. Toyoda¹, K. Takeda¹, M. Hori¹, S.-Y. Kang¹; , I. Sawada² (¹Nagoya Univ., ²Tokyo Electron Ltd.)

Combinatorial Analysis of Plasma-Materials Interactions for Advanced R&D of Future Nano Devices

Y. Setsuhara^1,4, K. Cho^1,4, K. Takenaka^1,4, M. Shiratani^2,4, M. Sekine^3,4, M. Hori^3,4 (¹Osaka Univ., ²Kyushu Univ., ³Nagoya Univ., ⁴JST, CREST)

Preparation and Characteristics of ‘Nafion-like’ Plasma Polymerized Membrane

Z. Jiang¹, X. Yu¹, Y. Meng¹, Z.-J. Jiang¹, Y. Shi¹, C. Corr², R. Boswell², C. Charles², M. Nagatsu³ (¹Chinese Academy of Sciences, ²Australian National Univ., ³Shizuoka Univ.)

Dust Particles Formed owing to Interactions between H₂ or D₂ Helicon Plasmas and Graphite

H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani (Kyushu Univ.)

Nano-Surface Chemical Bonding States Analysis of Plasma-Exposed Polymers with Hard X-Ray Photoelectron Spectroscopy

Y. Setsuhara^1,5, K. Cho^1,5, M. Shiratani^2,5, M. Sekine^3,5, M. Hori^3,5, E. Ikeitaga⁴, O. Nakatsuka³, S. Zaima³ (¹Osaka Univ., ²Kyushu Univ., ³Nagoya Univ., ⁴JASRI, ⁵JST, CREST)

Modification for Adsorption Property of Active Carbon Surface Preliminarily Treated by Polyvinylalcohol using Microwave Cold Plasma

M. Ueshima¹, E. Toda², Y. Nakajima², K. Sugiyama¹ (¹Hachinohe National College of Technology, ²Saitama Univ.)

Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films in Cl₂/Ar Gas Mix

D.Y. Lee, Y.B. Xiao, E.H. Kim, C.W. Chung (Inha Univ.)

Improvement of Surface Roughness in SOI Wafer Fabrication using Cl₂-based Neutral Beam Etching

T.H. Min, J.K. Yeon, B.J. Park, S.K. Kang, M.H. Jeon, G.Y. Yeom (Sungkyunkwan Univ.)

FinFET Metal Gate Hi-k Etch for Sub-32nm Technology

G. Kamarthy, G. Lo, I. Orain, Y. Kimura, R. Deshpande, Y. Yamaguchi, C. Lee, L. Braly (Lam Research Corp.)

Atomic-scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity

H. Tsuda, M. Mori, K. Eriguchi, K. Ono (Kyoto Univ.)

Metal Gate High-k Etch Challenges and Solutions

G. Kamarthy, I. Orain, Y. Kimura, A. Kabansky, A. Ozzello, L. Braly (Lam Research Corp.)

Large Area Negative Ion Source Based on Matrix ECR Cells for Fast Silicon Etching

E. Stamate¹, A. Lacoste² (¹Technical Univ. of Denmark, ²Universite Joseph Fourier)

Lateral Relation of Epitaxial Thin Film with Large Lattice Mismatch on Samples Prepared by YAG Laser Deposition

S. Kaneko¹, K. Akiyama¹, T. Ito¹, M. Yasui¹, M. Soga¹, Y. Hirabayashi¹, H. Funakubo², M. Yoshimoto² (¹Kanagawa Ind. Tech. Center, ²Tokyo Inst. of Technology)

Estimation of the Branching Ratios of Electron Impact Dissociation of Fluorocarbon Compounds

S.-Y. Kang, I. Sawada (Tokyo Electron Ltd.)

Modeling of Particle Growth in Pulsed PCVD Process for Preparation of High-Quality Thin Films

D.-J. Kim, T.D. Nguyen, K.-S. Kim (Kangwon National Univ.)

Development of High-Density Radio Frequency Plasma Source with Ring-Shaped Hollow Electrode for Dry Processing

Y. Ohtsu, H. Urasaki, T. Misawa, H. Fujita (Saga Univ.)

Investigation of the Inductively Coupled Plasma Source with a Ni-Zn Ferrite Module

G.H. Gweon, K.N. Kim, J.H. Lim, S.P. Hong, G.Y. Yeom (Sungkyunkwan Univ.)

Polyimide Film Etching by an Atmospheric-Pressure μPlasma using a 100-µm-φ SUS Pipe

H. Yoshiki (Tsuruoka National College of Technology)

Monitoring of Growth and Removal of Hydrocarbon Thin Films by Optical Reflectance Interference

K. Uehara, M. Shinohara, Y. Matsuda (Nagasaki Univ.)

Thin Film Transistors with Amorphous IGZO Semiconductor Fabricated by DC Magnetron Sputtering

W.-S. Kim, Y.-K. Moon, S. Lee, B.-W. Kang, K.-T. Kim, J.-W. Park (Hanyang Univ.)

Corrosion Properties of CrNTiN Multi-Coating on 316L Stainless Steel for Bipolar Plate in Polymer Electrolyte Membrane Fuel Cell Application

N.D. Nam, J.S. Song, J.G. Kim (Sungkyunkwan Univ.)

Deposition of a Carbon Nanocomposite Film using Magnetron Sputtering

T. Tsutsumi¹, N. Takada¹, N. Nafarizal², K. Sasaki¹ (¹Nagoya Univ., ²Univ. Tun Hussein Onn Malaysia)

Selective Epitaxial Growth of Silicon for Vertical Diode Application and Its Practical Selectivity

K.-S. Lee^1,2, S.-J. Park², J.-J. Han², Y.-W. Hyung², S.-S. Kim², C.-J. Kang², J.-T. Moon², H.-S. Jeong², B.-D. Choi¹ (¹Sungkyunkwan Univ, ²Samsung Electronics)

A Improvement Model For a Lower Leakage Current of Oxide-Nitride-Oxide (ONO) Inter-Poly Dielectrics Through Post Plasma Oxidation Treatment

W. Lee^1,2, J. Jee¹, J. Bok¹, Y. Hyung¹, S. Kim¹, C.-J. Kang¹, J.-T. Moon¹, K.-S. Kim², Y. Roh² (¹Samsung Electronics, ²Sungkyunkwan Univ)

Studies on the Characterization of Polystyrene Films Prepared by RF Plasma CVD Process

A.J. Choudhury, J. Chutia (Inst. of Advanced Study in Sci. and Technol.)

Fabrication of Tungsten Oxide Thin Film on the Flexible Substrate using RF Magnetron Sputtering in Ar/O₂ Mixture Gas

T. Matsunaga, T. Ohshima, H. Kawasaki, Y. Yagyu, Y. Suda (Sasebo National College of Technology)

Characterization of Double Interfaces System (Si₃N₄/SiO₂/Si and SiO₂/Si₃N₄/Si) Grown by ALD

S.K. Kang¹, S.K. Rha¹, J.H. Seo¹, Y.S. Lee¹, W.J. Lee² (¹Hanbat National Univ., ²Sejong Univ.)

Epitaxial Growth of β-FeSi₂ Thin Film on SiC by Co-Sputtering of Iron and Silicon

K. Akiyama, S. Kaneko, T. Kadowaki, Y. Hirabayashi (Kanawaga Industrial Technology Center)

Growth of SnO₂ Thick Films by Plasma Spray Physical Vapor Deposition

K. Iizuka¹, S. Sekiguchi¹, K. Nakamura², M. Kambara¹, T. Yoshida¹ (¹Univ. of Tokyo, ²Uchiya Thermostat Corp.)

Preparation and Characterization of Copper Selenide and Indium Selenide Thin Films by MOCVD

J.H. Yoo¹, S.M. Yu¹, J.H. Lee¹, C.H. Choi², J.B. Yoo¹ (¹Sungkyunkwan Univ., ²LG Micron Ltd.)

Pulsed Supermagnetron Plasma CVD of Amorphous Carbon Nitride Films

H. Kinoshita, A. Yamaguchi (Shizuoka Univ.)

Enhancement of the Sidewall Step Coverage of the Sputter-Deposited Film Through the Ideally-Tapered Via

C.G. Kim, W.J. Lee (KAIST)

Fabrication of CuInSe₂ Thin Film by Metal-Organic Chemical Vapor Deposition

S.M. Yu¹, J.H. Yoo¹, J.H. Lee¹, C.-H. Choi², J.-B. Yoo¹ (¹Sungkyunkwan Univ., ²LG Micron Ltd.)

Effects of NH₃ Plasma Pretreatment of Ta Substrate on Copper Seed Layer Formation by PE-ALD

D.-Y. Moon¹, T.-S. Kim¹, B.M. Kim², J.H. Kim², J.-W. Park¹ (¹Hanyang Univ., ²Hynix)

Effect of N₂ Gas Flow Ratio in Plasma Enhanced Chemical Vapor Deposition with SiH₄-NH₃-N₂-He Gas Mixture on Stress Relaxation of Silicon Nitride

T. Murata, Y. Miyagawa, M. Matsuura, K. Asai (Renesas Technology Corp.)

Monosilane Dissociation Process in Microwave-Excited High-Density H₂/SiH₄ Plasma

H. Asano, H. Endo, T. Ishijima, H. Toyoda (Nagoya Univ.)

Porosity Control of Nano-particle Composite Porous Low Dielectric Films using Pulse RF Discharges with Amplitude Modulation

S. Iwashita¹, H. Miyata¹, K. Koga¹, H. Matsuzaki¹, M. Shiratani¹, M. Akiyama² (¹Kyushu Univ., ²AIST)

Pressure and Aspect Ratio Dependence of Deposition Profile of Carbon Films on Trench Substrates Deposited by Plasma CVD

T. Nomura1, Y. Korenaga1, J. Umetsu1, H. Matsuzaki¹, K. Koga^1,4, M. Shiratani^1,4, Y. Setsuhara^2,4, M. Sekine^3,4, M. Hori^3,4 (¹Kyushu Univ., ²Osaka Univ., ³Nagoya Univ., ⁴JST, CREST)

Characterics of Preparation Metallic Nanodot by Organ-Metal Solution with Burning Method

I. Muramoto¹, S. Aoqui¹, H. Kawasaki², T. Oosima², T. Uematsu³ (¹Sojo Univ., ²Sasebo National College of Technology, ³Tokyo Metropolitan Industrial Technology Research Inst.)

Growth of TiO₂ Thin Films on Polypropylene Particles by PCVD Process

H.C. Pham, D.-J. Kim, K.-S. Kim (Kangwon National Univ.)

Synthesis of Si Nanoparticles for Multiple Exciton Generation Solar Cells using Multi-Hollow Discharge Plasma CVD

Y. Kawashima¹, H. Sato¹, K. Koga¹, M. Shiratani¹, M. Kondo² (¹Kyushu Univ.,²AIST)

Plasma-Enhanced ALD Oxide Film by Microwave RLSA

Y. Osawa, H. Ueda, M. Horigome, Y. Tanaka, T. Nozawa (Tokyo Electron Technology Development Inst. Inc.)

Growth of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films using a Coaxial Arc Plasma Gun

K. Hanada¹, T. Yoshitake¹, Y. Nakagawa¹, T. Yoshida¹, R. Ohtani², H. Setoyama², E. Kobayashi², K. Sumitani², T. Okajima², K. Nagayama¹ (¹Kyushu Univ., ²Saga-LS)

Measurements of Surface Temperature of a-Si:H Films in Silane Multi-Hollow Discharges with IR Thermometer

H. Sato, Y. Kawashima, K. Nakahara, K. Koga, M. Shiratani (Kyushu Univ.)

Time-Resolved Optical Observation of Plasma Process in Ultrananocrystalline Diamond/Amorphous Carbon Composite Films Deposition with a Coaxial Arc Plasma Gun

K. Hanada, T. Nishiyama, T. Yoshitake, K. Nagayama (Kyushu Univ.)

Oxygen Gas Barrier Properties Related with Structure of Hydrogenated Amorphous Carbon Films by ICP-CVD

S.-M. Baek, T. Shirafuji, S.-P. Cho, N. Saito, O. Takai (Nagoya Univ.)

Vacuum Ultraviolet Plasma Emission in a Dielectric Etch Reactor

E.A. Hudson¹, M. Moravej¹, M. Block¹, S. Sirard¹, D. Wei¹, K. Takeshita¹, B. Jinnai², S. Samukawa² (¹Lam Research Corp, ²Tohoku Univ.)

Nanoprocessing with Cluster Beams―Challenges and Opportunities

J. Matsuo (Kyoto University, CREST)

Determination of Precursors for Nitriding Silicon Surface using Inductively-Coupled Nitrogen Plasma

J. Matsuo (Kyoto University, CREST)

Optical and Electrical Characterization of H₂ Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring

Y. Nakakubo¹, A. Matsuda¹, M. Fukasawa², Y. Takao¹, T. Tatsumi², K. Eriguchi¹, K. Ono¹ (¹Kyoto Univ., ²Sony Corp.)

Low Damage Resist Strip for Porous SiOCH using 100 MHz / 13.56 MHz DFS CCP

T. Imamura, K. Yamamoto, K. Sato, K. Kurihara, H. Hayashi, T. Ohiwa (Toshiba Corp.)

In-situ Evaluation of H₂ Plasma Damage on Porous SiOCH Low-k Films

H. Yamamoto¹, K. Takeda¹, M. Sekine¹, M. Hori¹, T. Kaminatsui², K. Yamamoto², H. Hayashi², I. Sakai², T. Ohiwa² (¹Nagoya Univ., ²Toshiba Corp.)

Wiggling of Porous Dielectric Lines for Advanced Technological Node: from Simulation to Experiment

J. Ducote¹, T. David², N. Posseme², T. Chevolleau³, F. Bailly¹, A. Ostrovsky¹, M. Guillermet², C. Verove¹, J.C. Barbe², R.L. Inglebert⁴, O. Joubert⁴ (¹STMicroelectronics, ²CEA-LETI-Minatec, ³CNRS-LTM, ⁴CNRS-LTM)

Mechanism of Surface Roughening during Porous SiOCH Etching in Fluorocarbon Based Plasmas

F. Bailly¹, T. David², T. Chevolleau³, N. Posseme², O. Joubert², C. Cardinaud³ (¹STMicroelectronics, ²CEA, ³CNRS)

New Approach of Etching Analysis based on Internal Parameters in Combinatorial Plasma Process

C.S. Moon¹, K. Takeda¹, M. Sekine^1,2, Y. Setsuhara^2,3, M. Shiratani^2,4, M. Hori^1,2 (¹Nagoya Univ., ²CREST, ³Osaka Univ., ⁴Kyushu Univ.)

TiO₂ Etching by Atomic Layer Etching with BCl₃ Gas and Ar Neutral Beam

Y.Y. Kim¹, W.S. Lim^1,2, B.J. Park¹, G.Y. Yeom¹ (¹Sungkunkwan Univ., ²SAINT)

Modification of Porous SiOCH Trench Sidewalls Induced by Reducing and Oxidizing Post Etching Plasma Treatments

R. Bouyssou¹, T. Chevolleau¹, N. Posseme², C. Licitra², T. David², A. Ostrovsky³, C. Verove³, O. Joubert¹ (¹CNRS-LTM, ²CEA-LETI, ³STM)

Use of RLSA Plasma and HBr Process to Achieve Zero CD-Bias and Pattern Density Independent Multi-layer Mask Etching

T. Ozu, M. Sasaki, T. Nozawa (Tokyo Electron Development Inst.)

Etch Selectivity and Line Edge Roughness during Etching of Hard-Mask Layer with Patterned Extreme Ultra-Violet Resist in Dual-Frequency Capacitively Coupled Plasmas

B.S. Kwon¹, C.R. Jung¹, W. Heo¹, J.S. Park¹, N.-E. Lee¹, S.K. Lee² (¹Sungkyunkwan Univ., ²Hynix Semiconductor)

Damage-free Resist Ashing on Low-k Film Using Dual Frequency Capacitively Coupled Ar/O₂ Plasma

Y. Miyawaki, K. Takeda, M. Sekine, M. Hori (Nagoya Univ.)

Collective Laser Thomson Scattering Diagnostics of Laser Produced Plasmas for EUV Light Sources

K. Tomita, Y. Hyakuta, K. Ohara, K. Uchino (Kyushu Univ.)

Application of a Grad-T Type Thermal Probe to the Discharge Plasma

H. Matsuura¹, K. Nakano¹, S. Kado² (¹Osaka Prefecture Univ., ²Univ. of Tokyo)

Absorption Measurement of Metal Atom Density in ICP Assisted Sputter-Deposition of Al-doped ZnO Thin Films

T. Iwata, R. Shindo, M. Shinohara, Y. Matsuda (Nagasaki Univ.)

Emission Spectroscopy of Atmospheric Microplasma for Biomedical Application

M. Blajan, T. Ishii, M. Yamada, K. Shimizu (Shizuoka Univ.)

Temporal Variation of Hydrogen Atom Spectrum Emitted from Pulsed Microwave Plasma under Atmospheric Pressure

H. Yang, T. Ishijima, H. Toyoda (Nagoya Univ.)

Etching Characteristics and Mechanism of Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF₃ Plasma

Y.-H. Ham¹, A. Efremov², H.-W. Lee³, S.J. Yun⁴, N.K. Min¹, K.-H. Kwon¹ (¹Korea Univ. , ²State Univ. of Chemistry & Technology , ³Hanseo Univ., ⁴Electronica and Telecommunications Research Inst.)

Model-Based Analysis of the Y₂O₃ Etching Mechanism in Inductively Coupled BCl₃/Ar and Cl₂/Ar Plasmas

M.-K. Kim¹, A. Efremov², H.W. Lee³, N.K. Min¹, H.-H. Park⁴, K.-H. Kwon¹ (¹Korea Univ., ²State Univ. of Chemistry & Technology, ³Hanseo Univ., ⁴Yonsei Univ. )

Mircrowave Resonance Probes for Diagnostics of High Pressure Plasmas

K. Nakamura, J. Xu, Q. Zhang, H. Sugai (Chubu Univ.)

Measurements of Electron Density in SiH₄+H₂ Multi-Hollow Discharges using a Frequency Shift Probe

K. Nakahara, Y. Kawashima, H. Sato, K. Koga, M. Shiratani (Kyushu Univ.)

Laser Thomson Scattering Studies of Pulse Filament Discharges

K. Tomita, Y. Yamagata, K. Uchino (Kyushu Univ.)

Hybrid White Organic Light-Emitting Diodes for Reduced Efficiency Roll-off

J.H. Seo¹, J.S. Park¹, J.R. Koo¹, B.M. Seo¹, K.H. Lee², J.K. Park², S.S. Yoon², Y.K. Kim¹ (¹Hongik Univ., ²Sungkyunkwan Univ.)

Modified Julolidine-Containing Emitters for Red Organic Light-Emitting Diodes

M.H. Park¹, K.H. Lee¹, S.M. Kim¹, Y.K. Kim², S.S. Yoon¹ (¹Sungkyunkwan Univ., ²Hongik Univ.)

Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor Fabricated on Plasma Treated Silicon Nitride

Y.-K. Moon, W.-S. Kim, B.-W. Kang, S. Lee, J.-W. Park (Hanyang Univ.)

Basic Study of Surface Treatment at Low Discharge Voltage by Atmospheric Microplasma

K. Shimizu, A. Umeda, M. Blajan (Shizuoka Univ.)

Color Stability and High Efficiency White Phosphorescent Organic Light-Emitting Diodes with Proper Position of Phosphorescent Red Emitter

J.S. Park¹, J.H. Seo¹, J.R. Koo¹, B.M. Seo¹, K.H. Lee², J.K. Park², S.S. Yoon², Y.K. Kim¹ (¹Hongik Univ., ²Sungkyunkwan Univ.)

Improvement of CVD SiO₂ by SPA Plasma Treatment

T. Shiozawa, D. Katayama, D. Tamura, Y. Kabe, T. Kobayashi, Y. Sato, Y. Hirota, N. Yamamoto (Tokyo Electron AT Ltd.)

5-P26 Green Phosphorescent Organic Light-Emitting Diodes with Simplified Device Architecture

J.H. Seo, Y.Y. Jin, E.Y. Choi, H.M. Kim, J.H. Kim, Y.K. Kim (Hongik Univ.)

Highly Efficient Phosphorescent OLEDs using Red Emitting Ir(III) Complexes with Acetylated Phenylpyridine Ligands

K.H. Lee¹, H.J. Kang¹, J.K. Park¹, S.J. Lee², J.H. Seo², Y.K. Kim², S.S. Yoon² (¹Sungkyunkwan Univ., ²Hongik Univ.)

Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition using Remote ECR Plasma for OLED Devices

B.-W. Kang, W.-S. Kim, D.-Y. Moon, J.-G. Park, J.-W. Park (Hanyang Univ.)

Efficient Solution-Processed Small Molecular Green Phosphorescent Organic Light-Emitting Diodes by Mixed the Polymer Host

Y.Y. Jin¹, J.H. Seo¹, H.M. Kim¹, E.Y. Choi¹, J.H. Kim¹, J.-T. Je², Y.K. Kim¹ (¹Hongik Univ., ²SFC Co.,Ltd.)

Synthesis and Electroluminescent Properties of Blue Fluorescent Bis(diarylaminophenyl)bianthryls for OLEDs

J.N. You¹, K.H. Lee¹, W.C. Lee¹, J.S. Park², J.H. Seo², Y.K. Kim², S.S. Yoon¹ (¹Sungkyunkwan Univ.,²Hongik Univ.)

Interaction of Hydrogen Plasma with Nanodispersed Iron-Carbon Composites

A.A. Savitsky¹, V.B. Drozdovich², V.V. Pan’kov¹, V.V. Zhylinski², S.A. Zhdanok³ (¹Belarusian State Univ., ²Belarusian State Technological Univ., ³State Insitution)

Synthesis and Electroluminescence of an Ir-Complex with a Phosphino-benzoimidazole

D.H. Trinh¹, G.-C. Choi², Y.-S. Kwon², B.-J. Lee¹ (¹Inje Univ., ²Dong A Univ.)

Effect of RF Plasma on Reduction of Allergen Substance

Y. Yagyu¹, N. Hayashi², H. Kawasaki¹, T. Ohshima¹, Y. Suda¹ (¹Sasebo NCT., ²Saga Univ.)

Decomposition of Second Order Structure of Proteins Using RF Oxygen Plasma

N. Hayashi, S. Kitazaki, R. Kawaguchi, L. Hao, M. Goto (Saga Univ.)

Sterilization of Tube Inner Surface using Oxygen and Water Vapor Plasmas

S. Kitazaki, N. Hayashi (Saga Univ.)

Composition and Crystalline Properties of TiNi Thin Films Prepared by PLD under Vacuum and in Ambient Ar Gas

J.O. Cha¹, I.H. Joong², J. Sakai², T.H. Nam³, J.S. Ahn¹ (¹Kyung Hee Univ., ²Japan Advanced Inst. of Science and Technology,³Gyeong Sang National Univ.))

Improved Light Extraction Efficiency of GaN-Based Light Emitting Diodes using Al Doped ZnO Current Spreading Layers

B.H. Kong¹, W.S. Han¹, C.H. Woo¹, Y.S. Bae¹, H.K. Cho¹, M.Y. Kim², R.J. Choi² (¹Sungkyunkwan Univ., ²Samsung Electro-Mechanics Co.)

Ar / H₂ Plasma Cleaning Effect on Electroless Ni Plating for Micro-Bump Formation

A. Ikeda¹, K. Kajiwara¹, N. Watanabe², T. Asano¹ (¹Kyushu Univ., ²Fukuoka Industry, Science and Technology Foundation)

Electrochemical Characterization of O₂ Plasma Functionalized MWCNT Electrode for L. Pneumophila DNA Sensor

E.J. Park, J.-Y. Lee, J.H. Kim, C.J. Lee, N.K. Min (Korea Univ.)

Synthesis of Carbon Nanoflakes by Radio-Frequency Sputtering and Their Field Emission Characteristics

W.-C. Shih¹, J.-M. Jeng¹, C.-W. Tsou¹, J.-T. Lo², H.-C. Chen³, I.-N. Lin³ (¹Tatung Univ., ²Tatung Company, ³TamKang Univ.)

Enhancement Mechanisms of the Color Purity in Deep Blue Organic Light-Emitting Devices Fabricated Utilizing an Emitting Layer Containing Mixed Fluorescence and Phosphorescence Host Materials

H.S. Bang¹, D.C. Choo¹, T.W. Kim¹, J.H. Seo², Y.K. Kim² (¹Hanyang Univ., ²Hong-ik Univ.)

Electro-Optical Characteristics of a Pulse Driven Micro-Electrical Discharge Machining for Drilling of Hybrid CNT/Al₂O₃ Nanocomposites

C.-S. Ha¹, D.-H. Kim¹, H.-J. Lee¹, H.J. Lee¹, D.-Y. Lee², H.-S. Tak¹, M.C. Kang¹ (¹Pusan National Univ., ²Applied Carbone Nano Technology Co., LTD.)

TOC Evaluation of Organic Solute Treated by Microwave-Excited Bubble Plasma

R. Saito, H. Sugiura, T. Ishijima, H. Toyoda (Nagoya Univ.)

Beveling of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma

Y. Sano, T. Kato, K. Yamamura, H. Mimura, S. Matsuyama, K. Yamauchi (Osaka Univ.)

Improvement of Thickness Uniformity of SOI Layer by Numerically Controlled Sacrificial Oxidation using Atmospheric-Pressure Plasma with Electrode Array System

S. Kamisaka, Y. Sano, H. Mimura, S. Matsuyama, K. Yamauchi (Osaka Univ. )

DBD Plasma Produced in a Closed Container Used for Bacterial Inactivation

A.S. Chiper¹, W. Chen², O. Mejlholm², P. Dalgaard², E. Stamate² (¹Al. I. Cuza Univ., ²Technical Univ. of Denmark)

Effect of the Pulse Modulation Frequency on Silicon Etching using an Atmospheric-Pressure ICP Microjet

S. Tajima¹, S. Tsuchiya¹, T. Ichiki^1,2,3 (¹Univ of Tokyo, ²Univ. of Tokyo-CNBI, ³JST-CREST)

Melt-Molding of Uniaxially-Oriented Crystal Domains onto a Substrate

T. Yamao, K. Juri, T. Sakaguchi, H. Kuriki, A. Kamoi, S. Hotta (Kyoto Inst. Tech.)

Atomic Scale Etch Depth Control of III-V Compound Materials using Atomic Layer Etching

W.S. Lim^1,2, Y.Y. Kim², B.J. Park², G.Y. Yeom^1,2 (¹SAINT, ²Sungkyunkwan Univ.)

Analysis of Non-Thermal Plasma Deposited Zinc Oxide Thin Film

M.R. Mansur, O.V. Penkov, V.Y. Plaksin, J.S. Beom, J.H. Kim, H.-J. Lee (Jeju National Univ.)

Selective Growth Process and Formation Mechanism of Biexcitonic Zinc Dimmers

K. Obara, M. Hamasaki, M. Obara, M. Yamaguchi, M. Kuwayama, J. Kawabata, H. Manaka (Kagoshima Univ.)

Thick Gate Oxide Integrity Degradation in Lithography and Wet Cleaning Process

H.-F. Su, A.-C. Wei, N.-T. Lian, T. Yang, K.-C. Chen, C.-Y. Lu (Macronix International Company, Ltd.)

Effect of Temperature/Humidity Treatment Conditions on Interfacial Adhesion Energy between Electroless-plated Ni and Polyimide

S.-C. Park¹, K.-J. Min¹, K.-H. Lee², Y. Jeong², Y.-B. Park¹ (¹Andong National Univ., ²Korea Inst. of Materials Science)

Three-Dimensional Integration Technology Using Self-Assembly Technique

M. Koyanagi (Tohoku Univ.)

Role of Radical Reaction in Non-Bosch TSV Etching

T. Maruyama¹, T. Narukage², R. Onuki¹, K. Yonekura¹, N. Fujiwara¹ (¹Renesas Technology Corp., ²Renesas Semiconductor Engineering Corp.)

Dry-Etch Fin Patterning on SOI: Transition from 32 to 22 nm Node on a 6T-SRAM Cell

E. Altamirano-Sanchez, M. Ercken, A. Veloso, M. Demand, W. Boullart (IMEC)

Advanced Gate Dimension Control for R2R Loop Implementation in an Industrial Environment

L. Babaud^1,2, P. Gouraud¹, E. Pargon², O. Joubert² (¹ST Microelectronics, ²LTM,CNRS)

Multi-layer Stacking Technology using Direct Connection between TSV and Bump

N. Miyakawa, E. Hashimoto, T. Maebashi, N. Nakamura, Y. Sacho, S. Nakayama, S. Toyoda (Honda Research Inst. Japan Co., Ltd.)

Analyses of Surface Reaction on Cellulose and Gycine Treated in Atmospheric Microwave-Excited Plasmas for Elucidating the Mechanism of Sterilization

S. Yoshida¹, T. Ogawa¹, T. Fukuda¹, K. Takahashi¹, T. Urayama², S. Aoki³ (¹Kyoto Inst. Tech.,²Adtec Europe, ³Adtec Plasma Tech.)

Growth of the SiN Nanoparticles by using Plasma Etching and the Application for the Solar Cells

C. Yang¹, S.-H. Ryu¹, W.-J. Yoo¹, Y.-J. Park², J.M. Kim² (¹Sungkyunkwan Univ., SAINT, ²Samsung Advanced Inst. of Technology)

Etching Magnetic Tunnel Junction with Metal Etchers

K. Kinoshita, H. Utsumi, K. Suemitsu, H. Hada, T. Sugibayashi (NEC Corp.)

Formation of Cobalt and Cobalt-Slicide Nanodots on ultrathin SiO₂ Induced by Remote Hydrogen Plasma

A. Kawanami, K. Makihara, M. Ikeda, S. Miyazaki (Hiroshima Univ.)

Innovative Technologies for New Semiconductor Era

C.-J. Kang, Y.-J. Kim, K.-S. Shin (Samsung Electronics CO., LTD)

Three-dimensional Modeling of Plasma Processing Equipment

S. Rauf, J. Kenney, Z. Chen, K. Collins (Applied Materials, Inc.)

Tilting Control at Wafer Edge by Biasing to Focus Ring in UHF-ECR Dielectric Etching Apparatus

K. Maeda¹, K. Yokogawa¹, T. Ichino², T. Tamura², K. Hirozane², T. Kanekiyo², M. Izawa¹ (¹Hitachi Ltd., ²Hitachi High-Technologies)

Fine Ion Energy Control for Sub-32 nm Node Device RIE using Pulsed-DC Superimposed 100 MHz rf CCP

H. Hayashi¹, A. Ui¹, T. Kaminatsui¹, K. Yamamoto¹, K. Kikutani¹, I. Sakai¹, T. Ohiwa² (¹Toshiba Corp., ²Toshiba Corp.)

Formation of High Quality SiO₂ and SiO₂/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing

Y. Hiroshige, S. Higashi, K. Matsumoto, S. Miyazaki (Hiroshima Univ.)

Linewidth Roughness Transfer during Gate Stack Patterning with Amorphous Carbon Mask: Impact of Cure and Trim Processes

E. Pargon¹, L. Azarnouche², M. Martin¹, O. Luere¹, K. Menguelti¹, P. Gouraud², O. Joubert¹ (¹LTM/CNRS, ²STMicroelectronics)

Investigation of Mask Distortion during Trimming

N. Kofuji¹, H. Miura² (¹Hitachi, Ltd., ²Tohoku Univ.)

Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs

K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, K. Ono (Kyoto Univ.)