Committee members for IC-PLANTS (TENTATIVE)

• Organizing Committee
• Executive Committee
• Program Committee

Organizing Committee

Chair

M. Hori Nagoya University, Japan

Member

Y. Baba Nagoya University, Japan U. Czarnetzki Ruhr-University at Bochum, Germany B. Gnade University of Texas at Dallas, USA B. Graham Queen's University, Belfast, UK T. Goto Chubu University, Japan J. G. Han Shungkyunkwan University, Korea T. Hara Toyota Technological Institute , Japan R. Hatakeyama Tohoku University, Japan M. Hirose MIRAI Project, Japan Y. Horiike National Institute for Material Science, Japan S. Hosaka Tokyo Electron Limited, Japan S. Ikezawa Chubu University, Japan H. Ikuta Nagoya University, Japan O. Joubert National Center for Scientific Research, France K. Koumoto Nagoya University, Japan A. Kono Nagoya University, Japan T. Makabe Keio University, Japan T. Mizutani Nagoya University, Japan M. Nagatsu Shizuoka University, Japan T. Ohiwa Toshiba Corporation, Japan N. Ohno Nagoya University, Japan K. Ono Kyoto University, Japan H. Sugai Chubu University, Japan O. Takai Nagoya University, Japan T. Tanji Nagoya University, Japan N. Umehara Nagoya University, Japan S. Zaima Nagoya University, Japan

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Executive Committee

Chair	H. Toyoda Nagoya University, Japan
Member	M. Aramaki Nagoya University, Japan T. Hayashi Nagoya University, Japan M. Hiramatsu Meijo University, Japan T. Ishijima Nagoya University, Japan K. Ishikawa Nagoya University, Japan M. Ito Meijo University, Japan S. Kajita Nagoya University, Japan H. Kondo Nagoya University, Japan H. Kousaka Nagoya University, Japan K. Sasaki Nagoya University, Japan K. Takeda Nagoya University, Japan

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Program Committee

Chair	M. Sekine Nagoya University, Japan
Vice Chair	K. Sasaki Nagoya University, Japan
Member	H. Amano Meijo University, Japan J. H. Boo Sungkyunkwan University, Korea T. Egawa Nagoya Institute of Technology, Japan R.A.H. Engeln Eindhoven University of Technology, The Netherlands P. Favia University of Bari, Italy N. Fujiwara Renesas Technology Corporation, Japan D. Graves University of California, Berkeley, USA M. Goeckner University of Texas at Dallas, USA S. Hamaguchi Osaka University, Japan T. Hayashi Nagoya University, Japan M. Hiramatsu Meijo University, Japan Y. Huang Tsinghua University, China T. Ichiki The University of Tokyo, Japan M. Izawa Hitachi Limited, Japan M. Kondo AIST (National Institute of Advanced Industrial Science and Technology), Japan N. Koshizaki AIST(National Institute of Advanced Industrial Science and Technology), Japan S. Miyazaki Hiroshima University, Japan K. Nakamura Chubu University, Japan G. Oehrlein University of Maryland, USA K. Ostrikov CSIRO Materials Science and Engineering and The University of Sydney, Australia L. Overzet University of Texas at Dallas, USA J. Röpcke Institute of Low Temperature Plasma Physics, Germany N. Saito Nagoya University, Japan M. Sasaki Toyota Technological Institute, Japan I. Sawada Tokyo Electron Limited, Japan Y. Setsuhara Osaka University, Japan M. Shiratani Kyushu University, Japan T. Tatsumi SONY Corporation, Japan A. Wakahara Toyohashi University of Technology, Japan T. Watanabe Tokyo Institute of Technology, Japan

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