Manuscript

Publication

Forthcoming articles

  • [320] TBD
    • to be submitted
      • Shohei Nakamura, Atsushi Tanide, and Kenji Ishikawa
  • [319] TBD
    • to be submitted
      • Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Shih-Nan Hsiao, Kenji Ishikawa, and Masaru Hori
  • [318] TBD
    • to be submitted
      • Shih-Nan Hsiao, Yusuke Imai, Makoto Sekine, Ryutaro Suda, Yuki Iijima, Yoshihide Kihara, Kenji Ishikawa, and Masaru Hori
  • [317] TBD
    • to be submitted
      • Ryusei Sakai, Kenji Ishikawa, Hiroki Kondo, Kiichi Niitsu, Mineo Hiramatsu, Hiromasa Tanaka, and Masaru Hori
  • [316] TBD
    • under review
      • Hiroshi Ehara, Jiang Xinwei, Mana Kano-Nakata, Nikolay Britun, Hiroshi Hashizume, Hiromasa Tanaka, and Kenji Ishikawa
  • [315] Low-temperature plasma irradiation of Ringer's lactate generates heterogeneous molecules for cancer treatment
    • under review. Research Square (Preprint)
      • Camelia Miron, Satoshi Kashiwagura, Nikolay Britun, Daiki Ito, Naoyuki Iwata, Yang Liu, Hiroaki Kajiyama, Shinya Toyokuni, Massaki Mizuno, Hiroshi Hashizume, Hiroki Kondo, Kenji Ishikawa, Hiromasa Tanaka, and Masaru Hori
  • [311] The effect of electrical stimulation on the cellular response of human mesenchymal stem cells grown on silicon carbide-coated Carbon nanowalls scaffolds
    • in reviewing
      • Koki Ono, Ayako Tanaka, Kenji Ishikawa, Wakana Takeuchi, Kenichi Uehara, Shigeo Yasuhara, Masaru Hori, and Hiromasa Tanaka
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Just as accepted

  • [314] Reaction surface analysis of plasma etching of SiN, SiO2, and poly-Si films using low-global warming potential CF3CHCF2 gas
    • Applied Surface Science (2025).
      • Tran Trung Nguyen, and Kenji Ishikawa
  • [313] Study on selective dry etching of epitaxially grown Si0.7Ge0.3 and Si using H2 diluted CF4 plasma
    • Japanese Journal of Applied Physics (2025). (DOI)
      • Kotaro Ozaki, Yusuke Imai, Takayoshi Tsutsumi, Noriharu Takada, Kenji Ishikawa, Yuji Yamamoto, Wei-Chen Wen, and Katsunori Makihara
  • [312] Atomically self-limited removal of Cl2-plasma-modified GaN by F2-added Ar plasma at high temperature of 300°C
    • Japanese Journal of Applied Physics (2025). (DOI)
      • Atsushi Tanide, Shohei Nakamura, He Jia, and Kenji Ishikawa
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Published online

CRediT from authorship to contributorship detail

1. Conceptualization, 2. Data curation, 3. Formal Analysis, 4. Funding acquisition, 5. Investigation, 6. Methodology, 7. Project administration, 8. Resources, 9. Software, 10, Supervision, 11. Validation, 12. Visualization, 13. Writing – original draft, 14. Writing – review & editing

Last-modified: 2025-07-02 (水) 22:19:36