Publication5

Back to Publication

[2023]

  • [281] OPEN Q1 Etch Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6
    • Applied Surface Science 638, 157981 pp. 1-14 (November 30, 2023). (DOI)
      • Taito Yoshie, Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Shih-Nan Hsiao, Takayoshi Tsutsumi, Makoto Sekine, and Masaru Hori
  • [P15] Etch Selective isotropic atomic-layer etching of thin films by using dry chemical removal tool
    • SPIE proceedings: Advanced Etch Technology and Process Integration for Nanopatterning XII 12499, 124990E (2023) (DOI)
      • Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi, Masaru Izawa, Kenji Ishikawa, and Masaru Hori
  • [265] GaN Thermal cyclic etching of GaN using sequential exposures of Cl2 plasma and Ar plasma at substrate temperature of 400°C
    • Journal of Applied Physics 133, 043302 pp. 1-11 (January 24, 2023). (DOI)
      • Shohei Nakamura, Atsushi Tanide, Takahiro Kimura, Soichi Nadahara, Kenji Ishikawa, Makoto Sekine, Osamu Oda, and Masaru Hori

[2022]

  • [258] OPEN Q1 Etch Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
    • Scientific Reports 12, 20394 pp. 1-13 (November 27, 2022). (DOI)
      • Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Hirotaka Hamamura, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, and Masaru Hori
  • [257] FC QC Dissociation channels of c-C4F8 to C2F4 in reactive plasma
    • Japanese Journal of Applied Physics 61, 106006 pp. 1-6 (2022). (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Hiroshi Iwayama, Makoto Sekine, and Masaru Hori
  • [249] Etch Plasma-assisted, thermal-cyclic atomic-layer etching of tungsten and control of its selectivity to titanium nitride
    • Journal of Vacuum Science and Technology B 40, 022201 (pp.1-11) (February 4, 2022).　(DOI)
      • Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi, Yuko Hanaoka, Masaru Izawa, Kenji Ishikawa, and Masaru Hori

[2021]

  • [233] Q1 Etch Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and Ar
    • Applied Surface Science 541, 148439 pp. 1-8 (March 1, 2021). (DOI)
      • Shih-Nan Hsiao, Kenji Ishikawa, Toshio Hayashi, Jiwei Ni, Takayoshi Tsutsumi, Makoto Sekine, and Masaru Hori
  • [229] Reduction in photon-induced interface defects by optimal pulse repetition rate in the pulse-modulated inductively coupled plasma
    • Japanese Journal of Applied Physics 60 (1), 010906 pp.1-6 (January 1, 2021). (DOI)
      • Yasufumi Miyoshi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, and Tetsuya Tatsumi

[2020]

  • [216] GaN In situ surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar+ ions and Cl radicals
    • Journal of Vacuum Science and Technology A 38 (4), 042602 pp. 1-11 (2020). (DOI)
      • Masaki Hasegawa, Takayoshi Tsutsumi, Atsushi Tanide, Shohei Nakamura, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [213] QC Electronic properties and primarily dissociation channels of fluoromethane compounds
    • Japanese Journal of Applied Physics 59 (SJ), SJJE02 pp. 1-12 (June 1, 2020). (DOI) Selected in the Spotlights 2020
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [206] Etch Interaction of oxygen with polystyrene and polyethylene polymer films: a mechanistic study
    • Journal of Applied Physics 127 (2), 023303 pp. 1-9 (January 10, 2020) (DOI)
      • Yusuke Fukunaga, Roberto C. Longo, Peter Ventzek, Barton Lane, Alok Ranjan, Gyeong S. Hwang, Greg Hartmann, Takayoshi Tsutsumi, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori

[2019]

  • [203] Etch Rapid thermal-cyclic atomic-layer etching of titanium nitride in CHF3/O2 downstream plasma
    • Journal of Physics D: Applied Physics 52 (47), 475106 pp. 1-9 (September 9, 2019) (DOI)
      • Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi, Masaru Izawa, Kenji Ishikawa, and Masaru Hori
  • [200] Etch Self-limiting reactions of ammonium salt in CHF3/O2 downstream plasma for thermal-cyclic atomic layer etching of silicon nitride
    • Journal of Vacuum Science and Technology A 37 (5), 051002 pp. 1-8 (August 1, 2019) (DOI)
      • Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi, Masaru Izawa, Tomonori Saeki, Kenji Ishikawa, and Masaru Hori
  • [197] Q2 Etch Surface modifications of polyethylene terephthalate (PET) by VUV and radicals in oxygen and hydrogen plasmas
    • Plasma Processes and Polymers 16 (6), 1800175 pp. 1-11 (May 31, 2019) (DOI)
      • Yan Zhang, Kenji Ishikawa, Miran Mozetič, Makoto Sekine, Takayoshi Tsutsumi, Hiroki Kondo, and Masaru Hori
  • [190] QC Electronic properties and primarily dissociation channels of hydrofluoroethane compounds
    • Japanese Journal of Applied Physics 58 (SE), SEEF01 pp. 1-18 (May 1, 2019) (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [187] GaN Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature
    • Journal of Vacuum Science and Technology B 37 (2), 021209 pp. 1-6 (March 12, 2019) (DOI)
      • Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shohei Takatsuji, Motohiro Kohno, Kazuo Kinose, Soichi Nadahara, Kenji Ishikawa, Makoto Sekine and Masaru Hori
  • [186] OPEN Chemical bond structures of porous SiOC Film (k<2.4) for resistance of plasma induced damages
    • Micro and Nano Engineering 3, pp. 1-6 (March 7, 2019) (DOI)
      • Hideshi Miyajima, Hideaki Masuda, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [181] APP Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass
    • Journal of Applied Physics 125 (6), 063304 pp. 1-11 (February 14, 2019) (DOI)
      • Thi-Thuy-Nga Nguyen, Minoru Sasaki, Hidefumi Odaka, Takayoshi Tsutsumi, Kenji Ishikawa, and Masaru Hori
  • [173] Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system
    • Japanese Journal of Applied Physics 58 (2), 020906 pp. 1-5 (January 21, 2019) (DOI)
      • Yusuke Fukunaga, Takayoshi Tsutsumi, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

[2018]

  • [166] GaN Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH4/H2 at 300-500°C
    • Vacuum 156, pp. 219-223 (October, 2018) (DOI)
      • Takashi Kako, Zecheng Liu, Kenji Ishikawa, Hiroki Kondo, Osamu Oda, Makoto Sekine, and Masaru Hori
  • [164] GaN Etch Reaction mechanisms between chlorine plasma and a spin-on type polymer mask for high temperature plasma etching
    • Japanese Journal of Applied Physics 57 (10), 106502 pp. 1-8 (August 31, 2018) (DOI)
      • Yan Zhang, Masato Imamura, Kenji Ishikawa, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine, and Masaru Hori
  • [160] OPEN Bio FC Low-autofluorescence fluoropolymer membrane filters for cell filtration
    • Japanese Journal of Applied Physics 57 (6S2), 06JF03 pp. 1-7 (May 25, 2018) (DOI) Selected in the Spotlights 2018
      • Naoto Kihara, Daiki Kuboyama, Daisuke Onoshima, Kenji Ishikawa, Ryohei Koguchi, Hiromasa Tanaka, Naoya Ozawa, Tetsunari Hase, Hiroshi Yukawa, Hidefumi Odaka, Yoshinori Hasegawa, Yoshinobu Baba, and Masaru Hori
  • [158] GaN Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma
    • Japanese Journal of Applied Physics 57 (6S2), 06JD01 pp. 1-6 (May 18, 2018) (DOI)
      • Zecheng Liu, Kenji Ishikawa, Masato Imamura, Takayoshi Tsutsumi, Hiroki Kondo, Osamu Oda, Makoto Sekine, and Masaru Hori
  • [156] FC QC Dissociative properties of 1,1,1,2-tetrafluoroethane (HFC-134a) obtained using computational chemistry
    • Japanese Journal of Applied Physics 57 (6S2), 06JC02 pp. 1-3 (April 16, 2018) (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [149] Bio FC Facile fabrication of a polyethylene terephthalate (PET) membrane filter with precise alignments of through holes
    • Japanese Journal of Applied Physics 57 (3), 037001 pp. 1-6 (March, 2018) (DOI)
      • Naoto Kihara, Hidefumi Odaka, Daiki Kuboyama, Daisuke Onoshima, Kenji Ishikawa, Yoshinobu Baba, and Masaru Hori
  • [147] Q2 FC QC Electro impact ionization of perfluoro-methyl-vinyl ether C3F6O
    • Plasma Sources Science and Technology 27 (1), 015009 pp. 1-8 (January 8, 2018) (DOI)
      • Yusuke Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, and Masaru Hori

[2017]

  • [141] FC Dependence of absolute photon flux on infrared absorbance alteration and surface roughness on photoresist polymers irradiated by vacuum ultraviolet emitted from HBr plasma
    • Japanese Journal of Applied Physics 56 (12), 126503 pp. 1-6 (November 15, 2017) (DOI)
      • Yan Zhang, Takuya Takeuchi, Kenji Ishikawa, Keigo Takeda, Toshio Hayashi, Makoto Sekine, Masaru Hori
  • [139] Etch Surface roughening of photoresist after change of the photon/radical and ion treatment sequence
    • Journal of Vacuum Science and Technology A 35 (6), 060606 pp. 1-6 (September 29, 2017) (DOI)
      • Yan Zhang, Takuya Takeuchi, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
  • [136] GaN Thermally enhanced formation of photon-induced damage on GaN in Cl2 plasma
    • Japanese Journal of Applied Physics 56 (8), 096501 pp. 1-7 (August 29, 2017) (DOI) Selected in Spotlights 2017
      • Zecheng Liu, Atsuki Asano, Masato Imamura, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Osamu Oda, Makoto Sekine, and Masaru Hori
  • [P15] FC Thermal cyclic atomic-level etching of nitride films: a novel way for atomic-scale nanofabrication
    • ECS Transactions 80 (3), pp. 3-14 (August 17, 2017) (DOI)
      • Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi, Masaru Kurihara, Masaru Izawa, Kenji Ishikawa, and Masaru Hori
  • [134] GaN Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation
    • Applied Physics Express 10 (8), 086502 pp. 1-4 (July 24, 2017) (DOI)
      • Zecheng Liu, Masato Imamura, Atsuki Asano, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Osamu Oda, Makoto Sekine, and Masaru Hori
  • [132] FC Temperature dependence of protection layer formation on organic trench sidewall in H2/N2 plasma etching with control of substrate temperature
    • Japanese Journal of Applied Physics 56 (7), 076202 pp. 1-6 (June 14, 2017) (DOI)
      • Yusuke Fukunaga, Takayoshi Tsutsumi, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [128] FC Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon based plasmas
    • Japanese Journal of Applied Physics 56 (6S2), 06HC03 pp. 1-5 (May 31, 2017) (DOI)
      • Toshinari Ueyama, Yusuke Fukunaga, Takayoshi Tsutsumi, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Manabu Iwata, Yoshinobu Ohya, Hideo Sugai, and Masaru Hori
  • [126] FC Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing
    • Journal of Physics D: Applied Physics 50 (19), 194001 pp. 1-13 (April 13, 2017) (DOI)
      • Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi, Makoto Miura, Masaru Kurihara, Kenji Maeda, Nobuyuki Negishi, Yasushi Sonoda, Motohiro Tanaka, Naoki Yasui, Masaru Izawa, Yohei Ishii, Kazumasa Okuma, Tiffany Saldana, James Manos, Kenji Ishikawa, and Masaru Hori
  • [123] FC Spatial profiles of interelectrode electron density in direct current superposed dual-frequency capacitively coupled plasmas
    • Journal of Physics D: Applied Physics 50 (15), 155201 pp. 1-13 (March 10, 2017) (DOI)
      • Yoshinobu Ohya, Kenji Ishikawa, Tatsuya Komuro, Tsuyoshi Yamaguchi, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
  • [119] GaN Investigation of effects of ion energies on both plasma-induced damages and surface morphologies and optimization of high-temperature Cl2 plasma etching in GaN
    • Japanese Journal of Applied Physics 56 (2), 026502 pp. 1-6 (January 25, 2017) (DOI)
      • Zecheng Liu, Jialin Pan, Atsuki Asano, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Osamu Oda, Makoto Sekine, and Masaru Hori

[2016]

  • [114] ALE Thermal cyclic etching of silicon nitride by formation and desorption of ammonium fluorosilicate
    • Applied Physics Express 9 (10), 106201 pp. 1-3 (September 9, 2016) (DOI)
      • Kazunori Shinoda, Masaru Izawa, Tadamitsu Kanekiyo, Kenji Ishikawa, and Masaru Hori.
  • [107] FC Rapid electron density decay observed by surface-wave probe in afterglow of pulsed fluorocarbon-based plasma
    • Japanese Journal of Applied Physics 55 (8), 080309 pp. 1-4 (July 15, 2016) (DOI)
      • Yoshinobu Ohya, Manabu Iwata, Kenji Ishikawa, Makoto Sekine, Masaru Hori, and Hideo Sugai
  • [106] QC Primary dissociation channels of SiH4 and H abstract reactions
    • Japanese Journal of Applied Physics 55 (7S2), 07LD07 pp. 1-6 (June 22, 2016) (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [105] FC Formation of a SiOF reaction intermixing layer on SiO2 etching using C4F6/O2/Ar plasmas
    • Journal of Vacuum Science and Technology A 34 (4), 040602 pp. 1-5 (May 17, 2016) (DOI)
      • Yoshinobu Ohya, Maju Tomura, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

[2015]

  • [95] GaN Suppression of plasma-induced damage on GaN etched by a Cl2 plasma at high temperatures
    • Japanese Journal of Applied Physics 54 (6S2), 06GB04 pp. 1-4 (June 1, 2015) (DOI)
      • Zecheng Liu, Jialin Pan, Takashi Kako, Kenji Ishikawa, Osamu Oda, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
  • [94] QC Electronic properties of HBr, O2 and Cl2 used in Si etching
    • Japanese Journal of Applied Physics 54 (6S2), 06GA03 pp. 1-4 (May 28, 2015) (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [93] FC Silicon nitride (SiN) etch performance of CH2F2 plasmas diluted with argon or krypton
    • Japanese Journal of Applied Physics 54 (4), 040303 pp. 1-4 (March 12, 2015) (DOI)
      • Yusuke Kondo, Kenji Ishikawa, Toshio Hayashi, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
  • [92] FC CF3+ fragmentation by electron impact ionization of perfluoro-propyl-vinyl-ethers, C5F10O, in gas phase
    • Japanese Journal of Applied Physics 54 (4), 040301 pp. 1-4 (March 4, 2015) (DOI)
      • Yusuke Kondo, Kenji Ishikawa, Toshio Hayashi, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
  • [87] FC Hydrofluorocarbon ion density of argon- or krypton-diluted CH2F2 plasmas: Generation of CH2F+ and CHF2+ by dissociative-ionization in charge exchange collisions
    • Journal of Physics D: Applied Physics 48 (4), 045202 pp. 1-7 (January 10, 2015) (DOI)
      • Yusuke Kondo, Yudai Miyawaki, Kenji Ishikawa, Toshio Hayashi, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

[2014]

  • [82] HN Recovery of atom density drift caused by change in reactor wall conditions by real-time autonomous control
    • Journal of Physics D: Applied Physics 47 (42), 422002 pp. 1-5 (September 18, 2014) (DOI)
      • Toshiya Suzuki, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
  • [80] HN Temporal changes of absolute densities of atoms in H2 and N2 mixture gas plasmas by surface modifications of reactor wall
    • Japanese Journal of Applied Physics 53 (5), 050301 pp. 1-4 (April 3, 2014) (DOI)
      • Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

[2013]

  • [65] Formation of nanoporous features, flat surfaces, or crystallographically oriented etched profiles by the Si chemical dry etching using the reaction of F2 + NO -> F + FNO at an elevated temperature
    • Journal of Physical Chemistry C 117 (40), pp. 20810–20818 (Sep 6, 2013) (DOI)
      • Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [59] FC QC Dissociation of C5F8 and C5HF7 etching gases
    • Japanese Journal of Applied Physics 52 (5S2), 05EB02 (pp. 1-4) (May 20, 2013) (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [58] GaN A high-temperature nitrogen plasma etching for preserving smooth and stoichiometric GaN surface
    • Applied Physics Express 6 (5), 056201 (pp. 1-4) (April 25, 2013) (DOI)
      • Ryosuke Kometani, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
  • [56] A room temperature Si etching in NO/F2 gas chemistry and its reaction mechanism
    • Journal of Physical Chemistry C 117 (10), pp. 5118-5125 (February 25, 2013) (DOI)
      • Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [54] FC Surface roughness development on ArF-photoresist studied by beam-irradiation of CF4 plasma
    • Journal of Physics D: Applied Physics 46 (10), 102001 (pp. 1-5) (February 8, 2013) (DOI)
      • Takuya Takeuchi, Kenji Ishikawa, Yuichi Setsuhara, Hiroki Kondo, Keigo Takeda, Makoto Sekine, and Masaru Hori
  • [53] FC Etching-enhancement followed by nitridation on low-k SiOCH film in Ar/C5F10O plasma
    • Japanese Journal of Applied Physics 52 (2), 020204 (pp. 1-4) (February 2013) (DOI)
      • Yudai Miyawaki, Emi Shibata, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Hidekazu Okamoto, Makoto Sekine, and Masaru Hori
  • [49] FC Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment
    • Journal of Applied Physics 113 (1), 014306 (pp. 1-6) (January 7, 2013) (DOI)
      • Takuya Takeuchi, Carles Corbella, Simon Grosse-Kreul, Achim von Keudell, Kenji Ishikawa, Hiroki Kondo, Keigo Takeda, Makoto Sekine, and Masaru Hori
  • [48] FC Highly selective etching of SiO2 over Si3N4 and Si in capacitively coupled plasma employing C5HF7 gas
    • Japanese Journal of Applied Physics 52 (1), 016201 (pp. 1-9) (January 2013) (DOI)
      • Yudai Miyawaki, Yusuke Kondo, Makoto Sekine, Kenji Ishikawa, Toshio Hayashi, Keigo Takeda, Hiroki Kondo, and Masaru Hori

[2012]

  • [40] QC Quantum chemical investigation of Si chemical dry etching by flowing NF3 into N2 downflow plasma
    • Japanese Journal of Applied Physics 51 (2), 026505 (pp. 1-5) (2012) (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu
  • [39] FC Direct current (dc) superposed dual-frequency capacitively-coupled-plasma (DS-CCP) in selective etch of SiOCH over SiC
    • Journal of Physics D: Applied Physics 45 (2), 025203 (pp. 1-7) (2012) (DOI)
      • Tsuyoshi Yamaguchi, Tetsuya Komuro, Chishio Koshimizu, Seigo Takashima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [38] QC Quantum chemical investigation for chemical dry etching of SiO2 by flowing NF3 into H2 downflow plasma
    • Japanese Journal of Applied Physics 51 (1), 016201 (pp. 1-6) (2012) (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu
  • [37] HN Feature profiles on plasma etch of organic films by a temporal control of radical densities and real-time monitoring of substrate temperature
    • Japanese Journal of Applied Physics 51 (1), 016202 (pp. 1-6) (2012) (DOI)
      • Hiroshi Yamamoto, Hiroki Kuroda, Masafumi Ito, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori

[2011]

  • [36] HN IR Chemical bond modification in porous SiOCH films by H2 and H2/N2 plasmas investigated by in situ infrared reflection absorption spectroscopy (IR-RAS)
    • Journal of Applied Physics 110 (12), 123301 (pp. 1-8) (December 28, 2011) (DOI)
      • Hiroshi Yamamoto, Kohei Asano, Kenji Ishikawa, Makoto Sekine, Hisataka Hayashi, Itsuko Sakai, Tokuhisa Ohiwa, Keigo Takeda, Hiroki Kondo, and Masaru Hori
  • [33] FC Beam Impacts of CF+, CF2+, CF3+, and Ar ion beam bombardment with energies of 100 and 400 eV on surface modification of photoresist
    • Japanese Journal of Applied Physics 50 (8S1), 08JE05 (pp. 1-5) (August 22, 2011) (DOI)
      • Takuya Takeuchi, Shinpei Amasaki, Hiroki Kondo, Kenji Ishikawa, Hirotaka Toyoda, Makoto Sekine, Song-Yun Kang, Ikuo Sawada, and Masaru Hori
  • [31] FC LIF Spatial distributions of electron, CF, and CF2 radical densities and gas temperature in dc-superposed dual-frequency capacitively coupled plasma etch reactor employing cyclic-C4F8/N2/Ar gas
    • Japanese Journal of Applied Physics 50 (5), 056101 (pp. 1-6) (2011) (DOI)
      • Tsuyoshi Yamaguchi, Tetsuya Kimura, Chishio Koshimizu, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
  • [30] HN IR H2/N2 plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics
    • Journal of Applied Physics 109 (8), 084112 (pp. 1-8) (2011) (DOI)
      • Hiroshi Yamamoto, Keigo Takeda, Kenji Ishikawa, Masafumi Ito, Makoto Sekine, Masaru Hori, Takeshi Kaminatsui, Hisataka Hayashi, Itsuko Sakai, and Tokuhisa Ohiwa
  • [29] FC QC Dissociation Channels of c-C4F8 to CF2 radical in reactive plasma
    • Japanese Journal of Applied Physics 50 (3), 036203 (pp. 1-6) (2011) (DOI)
      • Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu

[2007]

  • [24] ESR dia Etching damage in diamond studied using an energy-controlled oxygen ion beam
    • Japanese Journal of Applied Physics 46, pp. 60-64 (2007) (DOI)
      • Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki

[2006]

  • [23] ESR dia Structure of diamond surface defective layer damaged by hydrogen ion beam exposure
    • Diamond Related Materials 15, pp. 703-706 (2006) (DOI)
      • Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki
  • [21] ESR dia Defect creation in diamond by hydrogen plasma treatment at room temperature
    • Physica B 376/377, pp. 327-330 (2006) (DOI)
      • Yuuichi Yamazaki, Kenji Ishikawa, Seiji Samukawa, and Satoshi Yamasaki
  • [20] HN IR ESR Surface reactions during etching of organic low-k films by plasma of N2 and H2
    • Journal of Applied Physics 99 (8), 083305 (pp. 1-6) (2006) (DOI)
      • Kenji Ishikawa, Yoshikazu Yamaoka, Moritaka Nakamura, Y. Yamazaki, Satoshi Yamasaki, Y. Ishikawa, and Seiji Samukawa,

[2005]

  • [19] ESR dia Structural change in diamond by hydrogen plasma treatment at room temperature
    • Diamond Related Materials 14, pp. 1939-1942 (2005) (DOI)
      • Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki
  • [18] FC Beam Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition
    • Journal of Applied Physics 97 (5), 053302 (pp. 1-6) (2005) (DOI)
      • Ken-ichi Yanai, Kazuhiro Karahashi, Kenji Ishikawa, and Moritaka Nakamura
  • [17] FC ESR In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films
    • Applied Physics Letters 86 (26), 264104 (pp. 1-3) (2005) (DOI)
      • Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, and Satoshi Yamasaki

[2004]

  • [16] FC Beam Etching yield of SiO2 irradiated by F+ CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV
    • Journal of Vacuum Science and Technology A 22, pp. 1166-1168 (2004) (DOI)
      • Kazuhiro Karahashi, Ken-ichi Yanai, Kenji Ishikawa, Hideo Tsuboi, Kazuaki Kurihara, and Moritaka Nakamura

[2003]

  • [15] FC Beam Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon mono-fluoride ions on silicon dioxide surfaces
    • Journal of Vacuum Science and Technology A 21, pp. L1-L3 (2003) (DOI)
      • Kenji Ishikawa, Kazuhiro Karahashi, Hideo Tsuboi, Ken-ichi Yanai, and Moritaka Nakamura
  • [14] FC IR,LIF Surface and gas-phase observations of Ar diluted c-C4F8 plasma by using real-time infrared spectroscopy and planar laser-induced fluorescence
    • Journal of Applied Physics 93, pp. 1403-1408 (2003) (DOI)
      • Kenji Ishikawa, Shigenori Hayashi, and Makoto Sekine
  • [P6] Vapor treatment of copper surface using organic acids
    • MRS Proceedings, 766, E3.28 (2003) (DOI), (online)
      • Kenji Ishikawa, Teruo Yagishita, and Moritaka Nakamura

[2002]

  • [12] FC LIF Planar laser-induced fluorescence of fluorocarbon radicals in oxide etch process plasma
    • Japanese Journal of Applied Physics 41, pp. 2207-2212 (2002) (DOI)
      • Shigenori Hayashi, Kenji Ishikawa, and Makoto Sekine
  • [11] ESR IR In-vacuo electron spin resonance study on amorphous fluorinated carbon films for understanding of surface chemical reactions in plasma etching
    • Applied Physics Letters 81, pp. 1773-1775 (2002) (DOI)
      • Kenji Ishikawa, Shoji Kobayashi, Mitsuru Okigawa, Makoto Sekine, Satoshi Yamasaki, Tetsuji Yasuda, and Junichi Isoya
  • [10] FC IR Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon
    • Journal of Applied Physics 91, pp. 1661-1666 (2002) (DOI)
      • Kenji Ishikawa, and Makoto Sekine

[2001]

  • [9] FC IR In-situ time-resolved infrared spectroscopic study of silicon-oxide surface during selective etching over silicon in fluorocarbon plasma
    • Japanese Journal of Applied Physics 39, pp. 6990-6995 (2001) (DOI)
      • Kenji Ishikawa, and Makoto Sekine
Copyright Kenji Ishikawa (c) 2009-2025 Center for Low-temperature plasma sciences, Nagoya University.
Last-modified: 2024-12-04 (水) 12:31:37