Committee members for IC-PLANTS

• Organizing Committee
• Executive Committee
• Program Committee

Organizing Committee

Chair	H. Toyoda Nagoya University, Japan
Co-Chair	M. Shiratani Kyushu University, Japan
Member	Y. Baba Nagoya University, Japan U. Czarnetzki Ruhr-University at Bochum, Germany B. Gnade University of Texas at Dallas, USA T. Goto Chubu University, Japan W.G.. Graham Queen's University, Belfast, UK J. G. Han Shungkyunkwan University, Korea T. Hara Toyota Technological Institute , Japan R. Hatakeyama Tohoku University, Japan M. Hirose MIRAI Project, Japan M. Hori Nagoya University, Japan Y. Horiike National Institute for Material Science, Japan S. Hosaka Tokyo Electron Limited, Japan S. Ikezawa Chubu University, Japan H. Ikuta Nagoya University, Japan O. Joubert National Center for Scientific Research, France A. Kono Nagoya University, Japan K. Koumoto Nagoya University, Japan T. Makabe Keio University, Japan T. Mizutani Nagoya University, Japan M. Nagatsu Shizuoka University, Japan T. Ohiwa Toshiba Corporation, Japan N. Ohno Nagoya University, Japan K. Ono Kyoto University, Japan H. Sugai Chubu University, Japan O. Takai Nagoya University, Japan T. Tanji Nagoya University, Japan N. Umehara Nagoya University, Japan S. Zaima Nagoya University, Japan

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Executive Committee

Chair	H. Kondo Nagoya University, Japan
Co-Chair	K. Takeda Nagoya University, Japan
Member	M. Aramaki Nagoya University, Japan N. Ebizuka Nagoya University, Japan T. Hayashi Nagoya University, Japan M. Hiramatsu Meijo University, Japan T. Ishijima Nagoya University, Japan K. Ishikawa Nagoya University, Japan M. Ito Meijo University, Japan F. Jia Nagoya University, Japan S. Kajita Nagoya University, Japan H. Kousaka Nagoya University, Japan K. Makihara Nagoya University, Japan

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Program Committee

Chair

K. Nakamura Chubu University, Japan

Member

H. Amano Meijo University, Japan J. H. Boo Sungkyunkwan University, Korea T. Egawa Nagoya Institute of Technology, Japan R.A.H. Engeln Eindhoven University of Technology, The Netherlands P. Favia University of Bari, Italy N. Fujiwara Renesas Technology Corporation, Japan M. Goeckner University of Texas at Dallas, USA D. Graves University of California, Berkeley, USA S. Hamaguchi Osaka University, Japan T. Hayashi Nagoya University, Japan M. Hiramatsu Meijo University, Japan Y. Huang Tsinghua University, China T. Ichiki The University of Tokyo, Japan M. Ito Meijo University, Japan M. Izawa Hitachi Limited, Japan M. Kondo AIST (National Institute of Advanced Industrial Science and Technology), Japan N. Koshizaki AIST(National Institute of Advanced Industrial Science and Technology), Japan S. Miyazaki Hiroshima University, Japan G. Oehrlein University of Maryland, USA K. Ostrikov CSIRO Materials Science and Engineering and The University of Sydney, Australia L. Overzet University of Texas at Dallas, USA J. Röpcke Institute of Low Temperature Plasma Physics, Germany N. Saito Nagoya University, Japan K. Sasaki Hokkaido University, Japan M. Sasaki Toyota Technological Institute, Japan I. Sawada Tokyo Electron Limited, Japan M. Sekine Nagoya University, Japan Y. Setsuhara Osaka University, Japan T. Tatsumi SONY Corporation, Japan A. Wakahara Toyohashi University of Technology, Japan T. Watanabe Tokyo Institute of Technology, Japan

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