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2012年の国際会議リスト
- 176) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- (Best poster award) Modification of ArF photoresist caused by irradiation of fluorocarbon plasma-beam.
- The 14th International Workshop on Advanced Plasma Processing and Diagnostics, The 2nd Workshop for NU-SKKU Joint Institute for Plasma-NanoMaterials, (Kyushu University, Fukuoka, Japan, Jan. 7-8, 2012).
- (Best poster award) Modification of ArF photoresist caused by irradiation of fluorocarbon plasma-beam.
- 177) Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, and Masaru Hori.
- Mechanism of generating ions and radicals in C3F6O plasma.
- The 14th International Workshop on Advanced Plasma Processing and Diagnostics, The 2nd Workshop for NU-SKKU Joint Institute for Plasma-NanoMaterials, (Kyushu University, Fukuoka, Japan, Jan. 7-8, 2012).
- Mechanism of generating ions and radicals in C3F6O plasma.
- 178) Keigo Takeda, Atsushi Fukushima, Yusuke Abe, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Surface loss probability of hydrogen radical on silicon thin film in SiH4/H2 plasma CVD.
- 8th EU-Japan Joint Symposium on Plasma Processing (JSPP2012) at Nara, Japan
- Surface loss probability of hydrogen radical on silicon thin film in SiH4/H2 plasma CVD.
- 179) Masaru Hori, Makoto Sekine, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, and Mineo Hiramatsu.
- (INVITED) Advanced plasma nano science and technology for synthesis of nano-graphenes.
- iPlasmaNano-III, (Nanyang Executive Centere, Singapore, Feb. 26 - Mar. 1, 2012). K-5
- (INVITED) Advanced plasma nano science and technology for synthesis of nano-graphenes.
- 180) Makoto Sekine, Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, and Masaru Hori.
- (INVITED) Formation of 10-nm organic pillars by plasma etch with Pt particle masks and their field emission properties.
- iPlasmaNano-III, (Nanyang Executive Centere, Singapore, Feb. 26 - Mar. 1, 2012), I-22.
- (INVITED) Formation of 10-nm organic pillars by plasma etch with Pt particle masks and their field emission properties.
- 181) Atsushi Fukushima, Yusuke Abe, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Relationship between silicon thin film property and flux ratio of H radical to silicon growth precursor in SiH4/H2 plasma CVD.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 5p-A04OA, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Relationship between silicon thin film property and flux ratio of H radical to silicon growth precursor in SiH4/H2 plasma CVD.
- 182) Hiroshi Hashizume, Takayuki Ohta, T. Mori, Masafumi Ito, Fendong Jia, Keigo Takeda, Kenji Ishikawa, and Masaru Hori.
- Effect of atomic oxygen on inactivation of spores of P. digitatum by low-temperature atmospheric-pressure plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 7a-A05OA, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Effect of atomic oxygen on inactivation of spores of P. digitatum by low-temperature atmospheric-pressure plasma.
- 183) Shang Chen, Yi Lu, Ryosuke Kometani, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- The role of hydrogen radical on plasma damaged gallium nitride.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 5p-C06OC, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- The role of hydrogen radical on plasma damaged gallium nitride.
- 184) Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori.
- Field emission properties of 10-nm organic nanopillars fabricated by H2/N2 mixture gas plasma etching.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 7a-C06OC, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Field emission properties of 10-nm organic nanopillars fabricated by H2/N2 mixture gas plasma etching.
- 185) Tatsuya Hagino, Hiroyuki Kano, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Effect of electrode materials on synthesis of nano-graphene by alcohol in-liquid plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 8a-S06OD, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Effect of electrode materials on synthesis of nano-graphene by alcohol in-liquid plasma.
- 186) Takehiro Hiraoka, Noboru Ebizuka, Keigo Takeda, Takayuki Ohta, Kenji Ishikawa, Masafumi Ito, K. Kawase, Makoto Sekine, and Masaru Hori.
- Terahertz time-domain spectroscopy for Penicillium digitatum sterilization using non-equilibrium atmospheric pressure plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P1021A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Terahertz time-domain spectroscopy for Penicillium digitatum sterilization using non-equilibrium atmospheric pressure plasma.
- 187) Kenji Ishikawa, Sachiko Iseki, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Hiroyuki Kano, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Real time electron spin resonance observation of Penicillium digitatum spores interacted with plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P1023A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Real time electron spin resonance observation of Penicillium digitatum spores interacted with plasma.
- 188) Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Loss kinetics of hydrogen radicals in silane plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2009A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Loss kinetics of hydrogen radicals in silane plasma.
- 189) Naoya Sumi, Kenji Ishikawa, Hideo Horibe, Akihiko Kono, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Analysis of surface reactions mechanism on organic materials with H radical irradiation by real-time / in-situ electron spin resonance.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2010A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Analysis of surface reactions mechanism on organic materials with H radical irradiation by real-time / in-situ electron spin resonance.
- 190) Masanori Kato, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Three dimensional investigation of activated species in O2/Ar nonequilibrium atmospheric pressure plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2011A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Three dimensional investigation of activated species in O2/Ar nonequilibrium atmospheric pressure plasma.
- 191) Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, and Masaru Hori.
- Mechanism of generating ions and radicals in C3F6O plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2029A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Mechanism of generating ions and radicals in C3F6O plasma.
- 192) Ryosuke Kometani, Shang Chen, Yi Lu, Cao David, Kenji Ishikawa, Hiroki Kondo, Takashi Egawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori.
- Interactions with plasmas on gallium nitride at high temperature.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2037A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Interactions with plasmas on gallium nitride at high temperature.
- 193) Yi Lu, Shang Chen, Ryosuke Kometani, Kenji Ishikawa, Hiroshi Kondo, Keigo Takeda, Makoto Sekine, Takashi Egawa, Hiroshi Amano, and Masaru Hori.
- Depth profiles on stoichiometry of plasma-etched GaN.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2038A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Depth profiles on stoichiometry of plasma-etched GaN.
- 194) Tatsuya Komuro, Keigo Takeda, Kenji Ishikawa, Makoto Sekine, Y. Ohya, Hiroki Kondo, and Masaru Hori.
- Effect of DC-bias superposed to the upper electrode of dual-frequency capacitively coupled plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2039A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Effect of DC-bias superposed to the upper electrode of dual-frequency capacitively coupled plasma.
- 195) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, A. Yamazaki, A. Ito, H. Matsumoto, Makoto Sekine, and Masaru Hori.
- Clarification of highly selective SiO2 etching process using C5HF7 gas.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2040A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Clarification of highly selective SiO2 etching process using C5HF7 gas.
- 196) Kohei Asano, Hiroshi Yamamoto, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, A. Yamazaki, A. Ito, H. Matsumoto, Makoto Sekine, and Masaru Hori.
- Formation of smooth surface on 193 nm photoresist by C5HF7/O2/Ar plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2041A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Formation of smooth surface on 193 nm photoresist by C5HF7/O2/Ar plasma.
- 197) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- In situ XPS anaysis of ArF photoresist surface modified by fluorocarbon ions and radicals.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2042A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- In situ XPS anaysis of ArF photoresist surface modified by fluorocarbon ions and radicals.
- 198) Ya Lu, Atsushi Fukushima, Yusuke Abe, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Effect of hydrogen radical injection on plasma enhanced chemical vapor film deposition of microcrystalline silicon.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3021A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Effect of hydrogen radical injection on plasma enhanced chemical vapor film deposition of microcrystalline silicon.
- 199) Leoyung. Yu, Jun Kuki, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Crystallographic analysis of amorphous carbon films synthesized by radical-injection plasma-enhanced chemical vapor deposition.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3018A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Crystallographic analysis of amorphous carbon films synthesized by radical-injection plasma-enhanced chemical vapor deposition.
- 200) Jun Kuki, Leoyung Yu, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Effects of RF bias on optical properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3026A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Effects of RF bias on optical properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition.
- 201) Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori.
- Evaluation of crystallographic properties of carbon nanowalls by Raman spectroscopy.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3086C, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Evaluation of crystallographic properties of carbon nanowalls by Raman spectroscopy.
- 202) Tsuyoshi Horibe, S. Mitsuguchi, Hiroyuki Kano, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori.
- Formation and characteristics of TiO2 nanoparticles-supported carbon nanowalls fabricated employing supercritical fluid.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3088C, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Formation and characteristics of TiO2 nanoparticles-supported carbon nanowalls fabricated employing supercritical fluid.
- 203) H. Cho, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Electrical properties and crystalline structures of carbon nanowalls grown by CH4/H2 plasma.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3089C, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Electrical properties and crystalline structures of carbon nanowalls grown by CH4/H2 plasma.
- 204) Shinpei Amasaki, Takuya Takeuchi, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Noriko Sakurai, Hisataka Hayashi, Itsuko Sakai, Tokuhisa Ohiwa, and Masaru Hori.
- Investigation of reaction mechanism at sidewall of through si via (TSV) etching.
- 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2119A-LN, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
- Investigation of reaction mechanism at sidewall of through si via (TSV) etching.
- 205) Shang Chen, Yi Lu, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Hiroyuki Kano, Yutaka Tokuda, Makoto Sekine, Takashi Egawa, Hiroshi Amano, and Masaru Hori.
- Photoluminescence recovery of plasma damaged GaN by hydrogen radical annealing.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-42.
- Photoluminescence recovery of plasma damaged GaN by hydrogen radical annealing.
- 206) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, A. Ito, T. Suzuki, H. Matsumoto, Makoto Sekine, and Masaru Hori.
- Clarification of mechanisms of highly selective SiO2 etching process using C5HF7 gas.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-40.
- Clarification of mechanisms of highly selective SiO2 etching process using C5HF7 gas.
- 207) Yi Lu, Shang Chen, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Keigo Takeda, Makoto Sekine, Takashi Egawa, Hiroshi Amano, and Masaru Hori.
- Stoichiometry protection to as-etched GaN surface using high temperature N2 plasma assistance.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-41.
- Stoichiometry protection to as-etched GaN surface using high temperature N2 plasma assistance.
- 208) Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori.
- Subsequent temporal change of gaseous radical density in H2/N2 plasmas after different processes.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-31.
- Subsequent temporal change of gaseous radical density in H2/N2 plasmas after different processes.
- 209) Shinpei Amasaki, Takuya Takeuchi, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Masaru Hori, N. Sakurai, Hisataka Hayashi, Itsuko Sakai, and T. Ohiwa.
- Influence of SiF4 gas addition to sidewall reaction during deep si etching using SF6/O2 plasma.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-37.
- Influence of SiF4 gas addition to sidewall reaction during deep si etching using SF6/O2 plasma.
- 210) Kohei Asano, Hiroshi Yamamoto, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Modification of Si-O-Si structures on porous-SiOCH films by O2 plasma exposure and air exposure.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-56.
- Modification of Si-O-Si structures on porous-SiOCH films by O2 plasma exposure and air exposure.
- 211) Ryosuke Kometani, Shang Chen, Yi Lu, Cao David, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Takashi Egawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori.
- Morphology on GaN exposed to plasmas at high temperature.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-43.
- Morphology on GaN exposed to plasmas at high temperature.
- 212) Atsushi Fukushima, Yusuke Abe, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Relationship between silicon thin film property and flux ratio of H radical in SiH4/H2 plasma CVD.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-60.
- Relationship between silicon thin film property and flux ratio of H radical in SiH4/H2 plasma CVD.
- 213) Ya Lu, Atsushi Fukushima, Yusuke Abe, Y. J. Kim, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- The effect of the deposition rate of microcrystalline silicon deposition using a hydrogen radical injection plasma source.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-61.
- The effect of the deposition rate of microcrystalline silicon deposition using a hydrogen radical injection plasma source.
- 214) Hiroko Moriyama, Kenji Ishikawa, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Hiromasa Tanaka, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- ESR signals arisen from Penicillium digitatum spores.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-20.
- ESR signals arisen from Penicillium digitatum spores.
- 215) Hiromasa Tanaka, Kae Nakamura, Sachiko Iseki, H. Kajiyama, Hiroko Moriyama, Kenji Ishikawa, Hiroyuki Kano, F. Kikkawa, M. Mizuno, and Masaru Hori.
- Plasma-activated medium effectively killed glioma cancer cells.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-21.
- Plasma-activated medium effectively killed glioma cancer cells.
- 216) Fengdong Jia, Keigo Takeda, Kenji Ishikawa, Hiroyuki Kano, Jagath Kularatne, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Behaviours of reactive oxygen species generated by an Ar/O2 atmospheric pressure plasma jet.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-22.
- Behaviours of reactive oxygen species generated by an Ar/O2 atmospheric pressure plasma jet.
- 217) Noboru Ebizuka, Minoru Sasaki, W. Aoki, A. Bianco, F. Maria Zerbi, Makoto Sekine, Kenji Ishikawa, Hiroki Kondo, and Masaru Hori.
- Fabrication methods for volume binary grating and novel immersion grating by means of MEMS technologies.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-26.
- Fabrication methods for volume binary grating and novel immersion grating by means of MEMS technologies.
- 218) Satomi Tajima, Kenji Ishikawa, Toshio Hayashi, and Masaru Hori.
- Development of a Si dry chemical etching technique using NO/F2 gas mixtures without using plasmas.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-39.
- Development of a Si dry chemical etching technique using NO/F2 gas mixtures without using plasmas.
- 219) Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and K. Suu.
- O2 and N2 addition effect for Si etching in CF4 plasma.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-38.
- O2 and N2 addition effect for Si etching in CF4 plasma.
- 220) Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Fengdong Jia, Keigo Takeda, Kenji Ishikawa, and Masaru Hori.
- Efficiency of ground-state atomic oxygen for inactivation of P. digitatum spores evaluated by atmospheric pressure oxygen radical source.
- 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-19.
- Efficiency of ground-state atomic oxygen for inactivation of P. digitatum spores evaluated by atmospheric pressure oxygen radical source.
- 221) Kenji Ishikawa, Sachiko Iseki, Hiroko Moriyama, Hiromasa Tanaka, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Electron spin resonance (ESR) observation of radicals on biological organism interacted with plasmas.
- 2012 Spring Meeting of the Material Research Society, (San Francisco, USA, April 9 - 13, 2012), WW2.6
- Electron spin resonance (ESR) observation of radicals on biological organism interacted with plasmas.
- 222) Takehiro Hiraoka, Noboru Ebizka, Keigo Takeda, Takayuki Ohta, Kenji Ishikawa, Masafumi Ito, Kodo Kawase, Makoto Sekine, and Masaru Hori.
- Terahertz time-domain spectroscopic sensing of Penicillium digitatum inactivated by non-equilibrium atmospheric pressure plasmas.
- 2012 Spring Meeting of the Material Research Society, (San Francisco, USA, April 9 - 13, 2012), WW7.3
- Terahertz time-domain spectroscopic sensing of Penicillium digitatum inactivated by non-equilibrium atmospheric pressure plasmas.
- 223) Yusuke Abe, Masaru Hori, Atuschi Fukushima, Lu Ya, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, M. Sekine.
- Measurement of the flux ratio of hydrogen atom to film precursor for microcrystalline silicon solar cell.
- 5th International Workshop on Plasma Spectroscopy (IPS), (France, May 13 - 16, 2012), 2-4.
- Measurement of the flux ratio of hydrogen atom to film precursor for microcrystalline silicon solar cell.
- 224) Hiroki Kondo, T. Hagino, Kenji Ishikawa, H. Kano, M. Sekine, M. Hori.
- Critical factors of synthesis rate and crystallinity of nanographene in ultrahigh-speed nanographene synthesis employing alcohol liquid plasma.
- 4th International Conference on Microelectronics and Plasma Technology (ICMAP 2012), (Jeju, Korea, 2012), ON-03.
- Critical factors of synthesis rate and crystallinity of nanographene in ultrahigh-speed nanographene synthesis employing alcohol liquid plasma.
- 225) H. Shimoeda, H. Kondo, Kenji Ishikawa, M. Hiramatsu, M. Sekine, M. Hori.
- Edge and surface modification of nanographenes in carbon nanowalls by hydrogen peroxide treatments.
- 4th International Conference on Microelectronics and Plasma Technology (ICMAP 2012), (Jeju, Korea, 2012).
- Edge and surface modification of nanographenes in carbon nanowalls by hydrogen peroxide treatments.
- 226) Makoto Sekine, Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Y. Setsuhara, M. Shiratani, and M. Hori.
- (PLENARY) Formation of 10-nm organic pillars by plasma etch with Pt particle masks and their field emission properties.
- The 15th Korea-Japan workshop for Advanced Plasma Process and Diagnostics, (Sungkyunkwan University, Korea, June 7-8, 2012).
- (PLENARY) Formation of 10-nm organic pillars by plasma etch with Pt particle masks and their field emission properties.
- 227) T. Tsutsumi, M. Hori, M. Sekine, Kenji Ishikawa, K. Takeda, H. Kondo, T. Ohta, and M. Ito.
- High resolution temperature monitoring system of semiconductor substrate using fourier domain low coherence interferometer.
- The 15th Korea-Japan workshop for Advanced Plasma Process and Diagnostics, (Sungkyunkwan University, Korea, June 7-8, 2012). S02.
- High resolution temperature monitoring system of semiconductor substrate using fourier domain low coherence interferometer.
- 228) Y. Kondo, Y, Miyawaki, Kenji Ishikawa, T. Hayashi, M. Sekine, K. Takeda, H. Kondo, and M. Hori.
- Reaction mechanism of plasma etching using hydrogen-containing fluorocarbon gas.
- The 15th Korea-Japan workshop for Advanced Plasma Process and Diagnostics, (Sungkyunkwan University, Korea, June 7-8, 2012). S11.
- Reaction mechanism of plasma etching using hydrogen-containing fluorocarbon gas.
- 229) Hiroshi Hashizumi, Takayuki Ohta, Masafumi Ito, Fengdong Jia, Keigo Takeda, Kenji Ishikawa, and Masaru Hori.
- Inactivation efficiencies of reactive oxygen species on spores by atmospheric‐pressure O2/Ar plasma inactivation of Penicilium degitatum.
- International Conference on Plasma Science, (Edinburgh, UK, July 2012) July 9, 16:45 2E-5.
- Inactivation efficiencies of reactive oxygen species on spores by atmospheric‐pressure O2/Ar plasma inactivation of Penicilium degitatum.
- 230) Makoto Sekine, Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Toshio Hayashi, and Masaru Hori.
- Anaysis of photoresist surface modified by fluorocarbon ions and radicals.
- International Conference on Plasma Science, (Edinburgh, UK, July 2012) July 10, 2P-116.
- Anaysis of photoresist surface modified by fluorocarbon ions and radicals.
- 231) Masaru Hori, Kenji Ishikawa, Naoya Sumi, Keigo Takeda, Satomi Tajima, Hiroki Kondo, Makoto Sekine, Akihiko Kono, and Hideo Horibe.
- Real time in situ electron spin resonance (ESR) study of surface reaction on polymer interacted with plasma.
- International Conference on Plasma Science, (Edinburgh, UK, July 2012) July 10, 2P-186.
- Real time in situ electron spin resonance (ESR) study of surface reaction on polymer interacted with plasma.
- 232) Kenji Ishikawa, Hiromasa Tanaka, Hiroko Moriyama, Sachiko Iseki, Keigo Takeda, Satomi Tajima, Hiroki Kondo, Makoto Sekine, Masaru Hori, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, and Hiroyuki Kano.
- Electron spin resonance (ESR) study of radicals on biological organism created by interaction with plasma.
- International Conference on Plasma Science, (Edinburgh, UK, July 10, 2012), 2P-187.
- Electron spin resonance (ESR) study of radicals on biological organism created by interaction with plasma.
- 233) Masaru Hori, Hiroki Kondo, Tatsuya Hagino, Kenji Ishikawa, Keigo Takeda, Hiroyuki Kano, and Makoto Sekine.
- High-speed synthesis and crystalinity control of nanographene using in-liquid plasma in alcohol.
- XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESSCAMPIG), (Viana do Castelo, Portugal, July 10-14, 2012)
- High-speed synthesis and crystalinity control of nanographene using in-liquid plasma in alcohol.
- 234) M. Hori , M. Tanaka, Kenji Ishikawa, H. Kondo, K. Takeda, M. Sekine, F. Kikkawa, K. Nakamura, M. Hayashi, H. Kajiyama, M. Mizuno, H. Ohta, M. Ito, and H. Kano.
- (PLENARY) Atmospheric pressure plasma processes and their diagnostics for life sciences.
- The 2nd International Symposium for Plasma Biosciences, Plasma Bioscience Research Center, Kwangwoon University, Seoul, Korea, Aug. 12-14, 2012
- (PLENARY) Atmospheric pressure plasma processes and their diagnostics for life sciences.
- 235) T. Takeuchi, M. Sekine, K. Ishikawa, H. Kondo, K. Takeda and M. Hori.
- Investigation of modification of ArF photoresist during plasma etching processes.
- 14th Annual TECHCON Conference Technology & Talent for the 21st Century， (Renaissance Austin Hotel, Austin, Texas， Sep. 10-11, 2012), 3. 6.
- Investigation of modification of ArF photoresist during plasma etching processes.
- 236) H. Kondo, K. Yasuda, K. Ishikawa, M. Sekine, M. Hiramatsu, M. Hori.
- Gradual transition of chemical structures at initial growth stage of carbon nanowalls.
- The European Materials Conference European Materials Research Society Fall Meeting Scientific/Technical Symposia & Exhibition, (Warsaw University of Technology, Warsaw, Poland , September 17-21, 2012).
- Gradual transition of chemical structures at initial growth stage of carbon nanowalls.
- 237) Kenji Ishikawa, Hiroko Moriyama, Naoya Sumi, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Akihiko Kono, Hideo Horibe, Hiromasa Tanaka, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- (INVITED) Real-time / in-situ electron spin resonance analysis of surface reactions on organic / biological materials interacted with plasmas.
- International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, C-8-I26-010
- (INVITED) Real-time / in-situ electron spin resonance analysis of surface reactions on organic / biological materials interacted with plasmas.
- 238) Satomi Tajima, Kenji Ishikawa, Toshio Hayashi, and Masaru Hori.
- Chemical dry etching of poly-Si and single crystal Si using NO and F2 gas mixture without using plasmas.
- International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, C-8-O27-004
- Chemical dry etching of poly-Si and single crystal Si using NO and F2 gas mixture without using plasmas.
- 239) Ryosuke Kometani, Kenji Ishikawa, Shang Chen, Yi Lu, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Hiroshi Amano, and Masaru Hori.
- Surface roughness on plasma-etched gallium nitride (GaN).
- International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-P25-012
- Surface roughness on plasma-etched gallium nitride (GaN).
- 240) A. Malinowski, Makoto Sekine, Masaru Hori, Kenji Ishikawa, Hiroki Kondo, Takuya Takeuchi, Toshiya Suzuki, J. Jakbowski, and L. Lukasiak.
- Investigation of hydrogen radical kinetics during ArF 193nm photoresist processing for ultimate CMOS technology development.
- International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-O25-003
- Investigation of hydrogen radical kinetics during ArF 193nm photoresist processing for ultimate CMOS technology development.
- 241) Toshiya Suzuki, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori.
- Field electron emitter fabricated by plasma etching of organic material.
- International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-O25-005
- Field electron emitter fabricated by plasma etching of organic material.
- 242) Takuya Takeuchi, Shinpei Amasaki, Makoto Sekine, Keigo Takada, Hiroki Kondo, Kenji Ishikawa, and Masaru Hori.
- In situ XPS anaysis of ArF photoresist modification caused by fluorocarbon ions and radicals.
- International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-P25-009
- In situ XPS anaysis of ArF photoresist modification caused by fluorocarbon ions and radicals.
- 243) Takanao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori.
- Effects of hydrogen peroxide treatment on nanostructures in carbon nanowalls.
- International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-O24-012
- Effects of hydrogen peroxide treatment on nanostructures in carbon nanowalls.
- 244) T. Ohta, H. Hashizume, M. Ito, K. Takeda, Kenji Ishikawa, M. Hori.
- Oxidative inactivation mechanism of fungal spores employing atmospheric-pressure oxygen radical source.
- International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan,
- Oxidative inactivation mechanism of fungal spores employing atmospheric-pressure oxygen radical source.
- 245) H. J. Cho, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori.
- Edge termination on electrical properties of vertically-grown graphene sheets employing N2/H2 mixture plasma.
- 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto International Conference Center, Kyoto, Japan, September 25-27, 2012, PS-13-13
- Edge termination on electrical properties of vertically-grown graphene sheets employing N2/H2 mixture plasma.
- 246) Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Hiroyuki Kano, Fumitaka Kikkawa, and Masaru Hori .
- (Award) Analysis of the intracellular molecular mechanisms of plasma-activated medium mediated cell death in glioma brain tumor cells.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 1L-O05
- (Award) Analysis of the intracellular molecular mechanisms of plasma-activated medium mediated cell death in glioma brain tumor cells.
- 247) A. Fukushima, Y. Abe, Y. Lu, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, and M. Hori .
- Evaluation of relationship between μc-Si film property and flux ratio of H radicals to film precursors.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2Gr-O07
- Evaluation of relationship between μc-Si film property and flux ratio of H radicals to film precursors.
- 248) Yusuke Abe, Atsushi Fukushima, Ya Lu, Youn Joon Kim, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori.
- Spectroscopic determination of radical densities in SiH4/H2 plasma.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 1-P19
- Spectroscopic determination of radical densities in SiH4/H2 plasma.
- 249) Takayoshi Tsutsumi, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, and Masaru Hori.
- Non-contact temperature measurement of sapphire substrate for GaN using frequency domain low coherence interferometry.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 1-P26
- Non-contact temperature measurement of sapphire substrate for GaN using frequency domain low coherence interferometry.
- 250) Takeyoshi Horibe, Hiroki Kondo, Hiroyuki Kano, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, Masaru Hori.
- Two-step supporting of high-density metal nanoparticle catalysts on carbon nanowalls using supercritical fluid.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 1-P85
- Two-step supporting of high-density metal nanoparticle catalysts on carbon nanowalls using supercritical fluid.
- 251) Lu Ya, Astushi Fukushima, Yusuke Abe, Youn J. Kim, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori .
- Microcrystal orientation of silicon thin film deposited with hydrogen radical injection plasma enhanced CVD.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P14
- Microcrystal orientation of silicon thin film deposited with hydrogen radical injection plasma enhanced CVD.
- 252) Kuangda Sun, Keigo Takeda, Hiroki Kondo, Satomi Tajima, Kenji Ishikawa, Makoto Sekine, Masaru Hori, and Hitoshi Itoh.
- The formation of the insulating film with atmospheric pressure plasma-enhanced chemical vapor deposition by hexamethyldisiloxan mist.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P17
- The formation of the insulating film with atmospheric pressure plasma-enhanced chemical vapor deposition by hexamethyldisiloxan mist.
- 253) T. Komuro, K. Takeda, Kenji Ishikawa, M. Sekine, Y. Ohya, H. Kondo, and M. Hori.
- Highly selective etching of dielectrics over SiC film by dc superposed dual-frequency CCP.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P18
- Highly selective etching of dielectrics over SiC film by dc superposed dual-frequency CCP.
- 254) Kohei Asano, Yudai Miyawaki, Kenji Ishikawa, Makoto Sekine, Keigo Takeda, Azumi Ito, Hirokazu Matsumoto, Hiroki Kondo, and Masaru Hori.
- Mechanism and control of roughness formation on ArF photoresist by C5HF7 etching plasma.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P19
- Mechanism and control of roughness formation on ArF photoresist by C5HF7 etching plasma.
- 255) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Azumi Ito, Hirokazu Matsumoto, M. Sekine, and M. Hori.
- Studies on plasma etching of Si3N4 employing new alternative gas, C5HF7.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P20
- Studies on plasma etching of Si3N4 employing new alternative gas, C5HF7.
- 256) Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, Masaru Hori.
- Generation mechanism of ions and radicals in CHxFy etching plasmas.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P21
- Generation mechanism of ions and radicals in CHxFy etching plasmas.
- 257) Jongyun Park, Takuya Takeuchi, Jiadong Cao, Kenji Ishikawa, Yuichi Setsuhara, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Change of GaAs surface properties by irradiation of Cl2 ions.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P23
- Change of GaAs surface properties by irradiation of Cl2 ions.
- 258) Ryosuke Kometani, Shang Chen, Yi Lu, David Cao, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Takashi Egawa, Horishi Amano, Makoto Sekine, and Masaru Hori.
- Observation of plasma-exposed GaN surface at high temperature.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P24
- Observation of plasma-exposed GaN surface at high temperature.
- 259) Z. Liu, S. Chen, Y. Lu, R. Kometani, Kenji Ishikawa, Hiroyuki Kano, K. Takeda, H. Kondo, M. Sekine, T. Egawa, H. Amano, and M. Hori.
- Recovery of plasma-damaged GaN by employing exposure of radicals.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P25
- Recovery of plasma-damaged GaN by employing exposure of radicals.
- 260) Toshiya Suzuki, Arkadiusz Malinowski, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori.
- Influence of last condition in plasma reactor on gaseous radical density.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P26
- Influence of last condition in plasma reactor on gaseous radical density.
- 261) Takehiro Hiraoka, Keigo Takeda, Takayuki Ohta, Noboru Ebitsuka, Hiroki Kondo, Kenji Ishikawa, Kodo Kawase, Masafumi Ito, Makoto Sekine, and Masaru Hori.
- Optical properties of carbon nano walls in terahertz frequencies region.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P45
- Optical properties of carbon nano walls in terahertz frequencies region.
- 262) J. Cao, R. Kometani, J. Park, Y. Lu, S. Chen, Kenji Ishikawa, M. Sekine, M. Hori.
- Research on plasma etching of gallium based compound semiconductor.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P46
- Research on plasma etching of gallium based compound semiconductor.
- 263) Youn Joon Kim, Yi Lu, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori .
- Low temperature deposition and characteristics of GaN thin film by HF-PECVD.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P80
- Low temperature deposition and characteristics of GaN thin film by HF-PECVD.
- 264) Masaru Hori, Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Young Joon Kim, and Makoto Sekine.
- Reconsideration on effects of H radicals on thin film surfaces in plasma enhanced chemical vapor deposition employing SiH4/H2 gases.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P96
- Reconsideration on effects of H radicals on thin film surfaces in plasma enhanced chemical vapor deposition employing SiH4/H2 gases.
- 265) Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Surface reaction of F2, NO, F, and FNO on Si during the plasmaless Si etching in NO/F2 gas mixture.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P126
- Surface reaction of F2, NO, F, and FNO on Si during the plasmaless Si etching in NO/F2 gas mixture.
- 266) Hiroshi Hashizume, Susumu Nagano, Takayuki Ohta, Masafumi Ito, Keigo Takeda, Kenji Ishikawa, Masaru Hori.
- Disinfection of fungal spores by atmospheric pressure radical source.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 3P-03
- Disinfection of fungal spores by atmospheric pressure radical source.
- 267) Kenji Ishikawa, Hiroko Mizuno, Hiromasa Tanaka, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- Real-time electron spin resonance study on fungal spores during inactivation.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 3P-04
- Real-time electron spin resonance study on fungal spores during inactivation.
- 268) Leyong Yu, Jun Kuki, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori.
- Effect of nitrogen doping on photoconductivity of amorphous carbon films grown by radical-injection plasma-enhanced chemical vapor deposition.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 3P-125
- Effect of nitrogen doping on photoconductivity of amorphous carbon films grown by radical-injection plasma-enhanced chemical vapor deposition.
- 269) Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori.
- Effects of hydroxyl radical on nanographene surfaces in carbon nanowalls.
- APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 3P-129
- Effects of hydroxyl radical on nanographene surfaces in carbon nanowalls.
- 270) Yu Arai, Yusuke Noto, Yousuke Goto, Seiji Takahashi, Akihiko Kono, Tatsuo Ishijima, Kenji Ishikawa, Masaru Hori, and Hideo Horibe.
- Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals.
- 7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD-7), Osaka, (October 8-12, Japan)
- Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals.
- 271) Akihiko Kono, Yu Arai, Yousuke Goto, Seiji Takahashi, Kenji Ishikawa, Masaru Hori, and Hideo Horibe.
- Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer.
- 7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD-7), Osaka, (October 8-12, Japan)
- Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer.
- 272) Keigo Takeda, Jerome Jolibois, Kenji Ishikawa, Hiromasa Tanaka, Hiroyuki Kano, Makoto Sekine, and Masaru Hori.
- Measurement of activated species generated by 60 Hz excited atmospheric pressure Ar plasma in atmospheric gas.
- 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. UF3.00005
- Measurement of activated species generated by 60 Hz excited atmospheric pressure Ar plasma in atmospheric gas.
- 273) Takayoshi Tsutsumi, Takehiro Hiraoka, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, and Masaru Hori.
- Temperature measurement of substrate with a thin film using low-coherence interference.
- 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. UF3.00001
- Temperature measurement of substrate with a thin film using low-coherence interference.
- 274) Makoto Sekine, Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, and Masaru Hori.
- Precise plasma process control based on combinatorial plasma etching.
- 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. NW1.00030
- Precise plasma process control based on combinatorial plasma etching.
- 275) Hiroki Kondo, Tatusya Hagino, Keigo Takeda, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, and Masaru Hori.
- Study on synthesis processes and crystallinity changes of nanographene materials synthesized by alcohol liquid-plasma.
- 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. NW1.00055
- Study on synthesis processes and crystallinity changes of nanographene materials synthesized by alcohol liquid-plasma.
- 276) Kenji Ishikawa, Yusuke Kondo, Yudai Miyawaki, Toshio Hayashi, Makoto Sekine, Keigo Takeda, Hiroki Kondo, and Masaru Hori.
- Reaction model for etching surface interacted with hydrofluorocarbon plasmas.
- 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. NW1.00076
- Reaction model for etching surface interacted with hydrofluorocarbon plasmas.
- 277) Kenji Ishikawa, S. Chen, K. Takeda, H. Kondo, M. Sekine, and M. Hori.
- (INVITED) Healing process of plasma-damaged gallium nitride (GaN).
- International conference on emerging advanced nanomaterials (ICEAN), Mercure Hotel, Brisbane, Australia, (October 22- 25, 2012) 2B‐IL‐5
- (INVITED) Healing process of plasma-damaged gallium nitride (GaN).
- 278) J. S. Kularatne, Hiroyuki Kano, Masafumi Ito, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
- (title) AC励起大気圧プラズマを用いた下水モニタリング装置の開発.
- 5th International Symposium of Plasma Center for Industrial Application (PLACIA) and Plasma Application Monodzukuri (PLAM) on Reactivation of Manufacturing in Japan by Plasma-Nano Technology, Science Exchange Plaza, Nagoya Science Park, Nagoya, Japan, October 24, 2012
- (title) AC励起大気圧プラズマを用いた下水モニタリング装置の開発.
- 279) Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Hiroyuki Kano, Fumitaka Kikkawa, and Masaru Hori.
- (title) プラズマ培養液による脳腫瘍細胞のアポトーシス誘導.
- 5th International Symposium of Plasma Center for Industrial Application (PLACIA) and Plasma Application Monodzukuri (PLAM) on Reactivation of Manufacturing in Japan by Plasma-Nano Technology, Science Exchange Plaza, Nagoya Science Park, Nagoya, Japan, October 24, 2012
- (title) プラズマ培養液による脳腫瘍細胞のアポトーシス誘導.
- 280) Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Feng-Dong Jia, Keigo Takeda, Kenji Ishikawa, and Masaru Hori.
- (title) ミドリカビ胞子細菌における活性酸素の定量的解析.
- 5th International Symposium of Plasma Center for Industrial Application (PLACIA) and Plasma Application Monodzukuri (PLAM) on Reactivation of Manufacturing in Japan by Plasma-Nano Technology, Science Exchange Plaza, Nagoya Science Park, Nagoya, Japan, October 24, 2012
- (title) ミドリカビ胞子細菌における活性酸素の定量的解析.
- 281) Kenji Ishikawa, Hideo Horibe, Masafumi Ito, Makoto Sekine, and Masaru Hori.
- (INVITED) Real time in situ electron spin resonance (ESR) study of free radicals on materials created by plasmas.
- American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS2-TuA7
- (INVITED) Real time in situ electron spin resonance (ESR) study of free radicals on materials created by plasmas.
- 282) Yusuke Kondo, Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, Masaru Hori.
- Mechanism of generating ions and radicals in fluorocarbon plasma investigated by reaction model analysis.
- American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS2-MoA7
- Mechanism of generating ions and radicals in fluorocarbon plasma investigated by reaction model analysis.
- 283) Toshiya Suzuki, Toshiya Suzuki, A. Malinowski, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setuhara, Masaharu Shiratani, Makoto Sekine, Masaru Hori.
- Subsequent temporal change of gaseous h and n radical density in plasma after different processes.
- American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS1-TuM5
- Subsequent temporal change of gaseous h and n radical density in plasma after different processes.
- 284) R. Kometani, S. Chen, J. Park, J. Cao, Y. Lu, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Hiroshi Amano, Makoto Sekine, Masaru Hori.
- Control of surface properties on plasma-etched gallium nitride (GaN).
- American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS2-ThM5
- Control of surface properties on plasma-etched gallium nitride (GaN).
- 285) Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Evaluation of surface chemical bonding state and surface roughness of chemical dry etched Si using NO and F2 gas mixture.
- American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS-ThP25
- Evaluation of surface chemical bonding state and surface roughness of chemical dry etched Si using NO and F2 gas mixture.
- 286) Arkadiusz Malinowski, Makoto Sekine, Masaru Hori, Kenji Ishikawa, Hiroki Kondo, Takuya Takeuchi, Toshiya Suzuki, A. Jakubowski, L. Lukasaak, T. Tomaszewski.
- Investigation of plasma-surface interactions between hydrogen radical and chemically amplified photoresist.
- American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS2-WeA3
- Investigation of plasma-surface interactions between hydrogen radical and chemically amplified photoresist.
- 287) Hiroki Kondo, T. Kanda, Mineo Hiramatsu, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
- Crystalline and electrical properties of vertically-laminated carbon nanowalls formed by two-step growth method.
- American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), GR+AS+NS+SS-ThM9
- Crystalline and electrical properties of vertically-laminated carbon nanowalls formed by two-step growth method.
- 288) M. Fukasawa, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, H. Matsugai, T. Honda, M. Minami, F. Uesawa, Masaru Hori, and Tetsuya Tatsumi.
- Interface trap generation by VUV/UV radiation from fluorocarbon plasma.
- American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS-ThP14
- Interface trap generation by VUV/UV radiation from fluorocarbon plasma.
- 289) Kenji Ishikawa, H. Mizuno, H. Tanaka, H. Hashizume, T. Ohta, M. Ito, K. Takeda, H. Kondo, M. Sekine, and M. Hori.
- Plasma-biological surface interaction for food hygiene: real-time in situ electron spin resonance measurements.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), B-3
- Plasma-biological surface interaction for food hygiene: real-time in situ electron spin resonance measurements.
- 290) S. Tajima, T. Hayashi, Kenji Ishikawa, M. Sekine, and M. Hori.
- Evaluation of gas-surface reaction dynamics during the plasmaless Si etching using NO/F2 gas mixture.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), C-3
- Evaluation of gas-surface reaction dynamics during the plasmaless Si etching using NO/F2 gas mixture.
- 291) Y. Abe, A. Fukushima, Y. Lu, Y. Kim, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, and M. Hori.
- High performances of microcrystalline Si thin film formation for a solar cell by measurement and control of hydrogen radicals in the SiH4/H2 plasma.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), E-2
- High performances of microcrystalline Si thin film formation for a solar cell by measurement and control of hydrogen radicals in the SiH4/H2 plasma.
- 292) Z. Liu, S. Chen, Y. Lu, R. Kometani, Kenji Ishikawa, H. Kano, K. Takeda, H. Kondo, M. Sekine, T. Egawa, H. Amano, and M. Hori.
- An in-situ sequential H and N radical exposure process for recovery of plasma-damaged GaN.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), H-3
- An in-situ sequential H and N radical exposure process for recovery of plasma-damaged GaN.
- 293) M. Fukasawa, H. Matsugai, T. Honda, Y. Miyawaki, Y. Kondo, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, K. Nagahata, F. Uesawa, M. Hori, and T. Tatsumi.
- Photon-stimulated surface reaction and generation of damage to hydrogenated silicon nitride in fluorocarbon plasma.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), H-1
- Photon-stimulated surface reaction and generation of damage to hydrogenated silicon nitride in fluorocarbon plasma.
- 294) T. Komuro, K. Takeda, Kenji Ishikawa, M. Sekine, Y. Ohya, H. Kondo, and M. Hori.
- Highly selective etching of gap-fill dielectrics over SiC and SiN by the dc-bias superposed dual-frequency CCP.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-14
- Highly selective etching of gap-fill dielectrics over SiC and SiN by the dc-bias superposed dual-frequency CCP.
- 295) T. Hayashi, Kenji Ishikawa, M. Sekine, M. Hori.
- Quantum chemical investigations for excitation dissociations of C5F8 and C5HF7 etching gases.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-16
- Quantum chemical investigations for excitation dissociations of C5F8 and C5HF7 etching gases.
- 296) K. Asano, Y. Miyawaki, Kenji Ishikawa, M. Sekine, K. Takeda, A. Ito, H. Matsumoto, H. Kondo, and M. Hori.
- A reduction of degradation on ArF photoresist by C5HF7 plasma etching and its mechanism.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-17
- A reduction of degradation on ArF photoresist by C5HF7 plasma etching and its mechanism.
- 297) Y. Miyawaki, Y. Kondo, M. Sekine, Kenji Ishikawa, T. Hayashi, K. Takeda, A. Ito, H. Matsumoto, and M. Hori.
- Studies on plasma etching of Si3N4 in capacitively coupled plasma employing C5HF7.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-18
- Studies on plasma etching of Si3N4 in capacitively coupled plasma employing C5HF7.
- 298) R. Kometani, S. Chen, M. Liu, Kenji Ishikawa, H. Kondo, K. Takeda, T. Egawa, H. Amano, M. Sekine, and M. Hori.
- A high temperature plasma etching of GaN and its reaction mechanism.
- The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-61
- A high temperature plasma etching of GaN and its reaction mechanism.
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Copyright Kenji Ishikawa (c) 2009-2023 Center for Low-temperature plasma sciences, Nagoya University.
Last-modified: 2020-11-20 (金) 22:46:07