ProceedingIntern09

国際会議 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | before 2009

1993-2009年の国際会議リスト

  • 1) Shuzo Fujimura, Hiroki Ogawa, Kenji Ishikawa, Carlos Inomata, and H. Mori.
    • FT-IR-RAS analysis of native oxide grown on Si(111).
      • Extended Abstract of the 1993 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Makuhari, August 29-September 1, 1993), pp.618-620.
  • 2) Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura, and H. Mori.
    • New analytical method of SiO2 structure by infrared reflection absorption spectroscopy (IR-RAS).
      • 1993 Fall Meeting of the Material Research Society (MRS), Proc. 318 (Boston, November 28-December 5, 1993), pp. 425-430.
  • 3) Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, and Shuzo Fujimura.
    • Contribution of Si/SiO2 interface roughness in the observation of chemical structure.
      • Extended Abstract of the 1994 Intern. Conf. on Solid State Devices and Mater.(SSDM), (Yokohama, August 23-26, 1994), C-8-5, pp. 850-852.
  • 4) Hiroki Ogawa, Kenji Ishikawa, M.T. Suzuki, Y. Hayami, and Shuzo Fujimura.
    • Effects of dissolved oxygen in hf solution on silicon surface morphology.
      • Extended Abstract of the 1994 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Yokohama, August 23-26, 1994), pp. 437-439.
  • 5) K. Kubota, Hiroki Ogawa, Y. Morikawa, Kenji Ishikawa, Shuzo Fujimura, and Y. Horiike.
    • Study on reaction of fluorine radicals with Si(111) surface employing an in-situ combinated of ATR and XPS.
      • 8th Intern. Micro Process Conf., (Sendai, July 17-20, 1995), pp. 170-171.
  • 6) Kenji Ishikawa, Hiroki Ogawa, S. Oshida, K. Suzuki, and Shuzo Fujimura.
    • Thickness-deconvolved structural properties of thermally grown silicon dioxide film.
      • Extended Abstract of the 1995 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Osaka, August 21-24, 1995), PA-1-8, pp. 500-502.
  • 7) Hiroki Ogawa, Kenji Ishikawa, M. Aoki, Shuzo Fujimura, N. Ueno, Y. Horiike, and Y. Harada.
    • In-situ observation of oxygen exposed hydrogen terminated silicon surfaces.
      • Extended Abstract of the 1995 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Osaka, August 21-24, 1995), S-1-1-2, pp.13-15.
  • 8) Kenji Ishikawa, Hiroki Ogawa, S. Oshida, K. Suzuki, and Shuzo Fujimura.
    • Thickness-deconvolved structural properties of thermally grown silicon dioxide film.
      • 26th IEEE Semiconductor Interface Specialist Conf. (SISC 95), (Charleston, South Carolina, December 7-9, 1995), P1.2.
  • 9) Shuzo Fujimura, Kenji Ishikawa, and Hiroki Ogawa.
    • Early stage of native oxide growth on an atomically flat hydrogen terminated Si(111) surface.
      • Proc. 3rd Intern. Symp. Ultra Clean Processing of Silicon Surface (UCPSS 96), edited by M. Heyns, (Acco Leuven/Amersfoort, 1996), pp. 273-278.
  • 10) Kenji Ishikawa, and Makoto Sekine.
    • An in-situ time-resolved infrared spectroscopic study of silicon dioxide surface during selective etching over silicon using fluorocarbon plasma.
      • Microprocess and Nanotechnology Conference (MNC), (Tokyo, July 11-13, 2000), 13B-9-3, pp. 270-271.
  • 11) Kenji Ishikawa, and Makoto Sekine.
    • Early-stage modification of silicon oxide surface in fluorocarbon plasma for selective etching over silicon.
      • 47th International Symposium American Vacuum Society (AVS), (Boston, MA, October 2-6, 2000), PS-MoM4, p. 6.
  • 12) Kenji Ishikawa, and Makoto Sekine.
    • Early-stage modification of Silicon dioxide surface during fluorocarbon plasma etching.
      • 25th Intern. Conf. on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a35, p. 89.
  • 13) Shigenori Hayashi, Kenji Ishikawa, and Makoto Sekine.
    • Time-resolved planer laser-induced fluorescence of fluorocarbon radicals in oxide etch process plasma.
      • 25th International Conference on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a36, p. 91.
  • 14) Mitsuru Okigawa, Kenji Ishikawa, Shoji Kobayashi, Makoto Sekine, Satoshi Yamasaki, Tetsuji Yasuda, and Jun-ichi Isoya.
    • Electron-spin-resonance investigation on solid surfaces irradiated by fluorocarbon plasma.
      • 25th International Conference on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a34, p. 87.
  • 15) Kenji Ishikawa, Shigenori Hayashi, Mitsuru Okigawa, Shoji Kobayashi, Makoto Sekine, and Moritaka Nakamura.
    • In-vacuo electron-spin-resonance study on fluorocarbon films for SiO2 plasma etching.
      • AVS 48th International Symposium American Vacuum Society (AVS), (San Francisco, CA, October 28-November 2, 2001), PS1-MoA2, p.64.
  • 16) Kenji Ishikawa, Mitsuru Okigawa, Makoto Sekine, Moritaka Nakamura, Tetsuji Yasuda, Junichi Isoya, and Satoshi Yamasaki.
    • Dangling bond observation during fluorocarbon plasma etching processes using in-vacuo electron-spin-resonance technique.
      • 1st International Symposium on Dry Process, (Waseda, Tokyo, November 20-21, 2001), VII-6, pp. 301-306.
  • 17) Hideo Tsuboi, Kazuhiro Karahashi, Kenji Ishikawa, Yoshikazu Yamaoka, Kazuaki Kurihara, Makoto Sekine, and Moritaka Nakamura.
    • Measurements of SiO2 etch yields under F+ and CFx+ ion irradiation.
      • 3rd International Conference on Microelectronics and Interfaces (ICMI'02), (Santa Clara, CA, February 11-15, 2002), pp. .
  • 18) Kenji Ishikawa, Mitsuru Okigawa, Makoto Sekine, Moritaka Nakamura, Satoshi Yamasaki, Tetsuji Yasuda, and Junichi Isoya.
    • Dangling bond observation during plasma etching processes using in-vacuo electron-spin-resonance technique.
      • 16th European Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG) and 5th International Conference on Reactive Plasmas (ICRP), (Grenoble, France, July 15-18, 2002), P1-65, pp.169-170.
  • 19) Kazuhiro Karahashi, Hideo Tsuboi, Kenji Ishikawa, Kazuaki Kurihara, Yoshikazu Yamaoka, and Moritaka Nakamura.
    • Measurements of desorbed products and etching yield by CFx+ (x=1,2,3) ion irradiation on SiO2.
      • 16th European Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG) and 5th International Conference on Reactive Plasmas (ICRP), (Grenoble, France, July 15-18, 2002), P1-80, pp. 199-200.
  • 20) Kenji Ishikawa, Yoshikazu Yamaoka, Akihiro Egami, Kazuaki Kurihara, Moritaka Nakamura, Satoshi Yamasaki, Tetsuji Yasuda, and Junichi Isoya.
    • Using real-time infrared spectroscopy and in-vacuo electron-spin-resonance technique in the analysis of surface reactions during etching of organic low-k film by a plasma of N2 and H2.
      • 2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002), I-7, pp. 39-44.
  • 21) Ken-ichi Yanai, Kazuhiro Karahashi, Hideo Tsuboi, Kenji Ishikawa, Kazuaki Kurihara, and Moritaka Nakamura.
    • Study of SiO2 plasma etching and fluorocarbon film deposition with mass separated CFx+ ion beam irradiation.
      • 2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002), VII-3, pp. 269-274.
  • 22) Akihiro Egami, Yuji Hayashi, Toshio Kikuchi, Kenji Ishikawa, and Moritaka Nakamura.
    • Decomposition Mechanism of c-C4F8 in Plasma Assisted Catalytic Technology (PACT).
      • 2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002). VI-22, pp. 243-248.
  • 23) Kazuhiro Karahashi, Kenji Ishikawa, Hideo Tuboi, Ken-ichi Yanai, Kazuaki Kurihara, and Moritaka Nakamura.
    • Measurements of desorbed products and etching yield by CFx+ (x=1,2,3) ion irradiation.
      • AVS 49th International Symposium American Vacuum Society (AVS), (Denver Colorado, November 3-8, 2002), PS-FrM2, p.137.
  • 24) Ken-ichi Yanai, Kenji Ishikawa, Kazuhito Karahashi, and Moritaka Nakamura.
    • Study of selective etching of SiO2-to-Si3N4 and a-C:F film deposition with mass-analyzed CFx+ ion beam irradiation.
      • 4th International Conference on Microelectronics and Interfaces (ICMI’03), (Santa Clara, CA, March 3-6, 2003), pp. .
  • 25) Kenji Ishikawa, Teruo Yagishita, and Moritaka Nakamura.
    • Vapor treatment of copper surface using organic acids.
      • 2003 Spring meeting of the Material Research Society (MRS), (San Francisco, April 21–25, 2003), E3-28, pp. 459-464.
  • 26) Teruo Yagishita, Kenji Ishikawa, and Moritaka Nakamura.
    • Cleaning of copper surface using vapor-phase organic acids.
      • 203rd Meeting of the Electrochemical Society (ECS), (Paris, France, April 27 – May 2, 2003), F2-425, pp. 320-323.
  • 27) Moritaka Nakamura, Ken-ichi Yanai, Kazuhiro Karahashi, and Kenji Ishikawa.
    • Study of fluorocarbon plasma etching and film deposition with mass separated CFx+ ion beam irradiation.
      • 16th International Symposium on Plasma Chemistry (ISPC16), (Taorumina, Italy, June 22-27, 2003), p. 307.
  • 28) Teruo Yagishita, Kenji Ishikawa, and Moritaka Nakamura.
    • Mechanisms of vapor cleaning of copper surface using organic acids.
      • 204th Meeting of the Electrochemical Society (ECS), (Orlando, Florida, U. S. A., October 12-17, 2003), G1-613, pp. 259-263.
  • 29) Ken-ichi Yanai, Kazuhito Karahashi, Kenji Ishikawa, and Moritaka Nakamura.
    • Study of SiO2 plasma etching with off-normal mass-analyzed CFx+ ion beam irradiation.
      • AVS 50th International Symposium American Vacuum Society (AVS), (Baltimore, MD, U. S. A., November 2-7, 2003), PS1-WeA9, p. 171.
  • 30) Ken-ichi Yanai, Kazuhito Karahashi, Kenji Ishikawa, and Moritaka Nakamura.
    • Incident angular dependence of SiO2 and Si3N4 etching with mass-analyzed CFx+ ion beam irradiation.
      • 4th International Symposium on Dry Process, (Hongoh, Tokyo, November 14-15, 2003), 7-3, pp. 271-276.
  • 31) Teruo Yagishita, Kenji Ishikawa, and Moritaka Nakamura.
    • Cleaning of copper surface using vapor-phase organic acids.
      • 2nd EU-Japan Joint Symposium on Plasma processing, (February 17-19, 2004), P-06, p. 322.
  • 32) Ken-ichi Yanai, Kazuhito Karahashi, Kenji Ishikawa, and Moritaka Nakamura.
    • Incident angular dependence of SiO2 and Si3N4 etching with mass-analyzed CFx+ ion beam irradiation.
      • 2nd EU-Japan Joint Symposium on Plasma processing, (February 17-19, 2004), P-03, p. 295.
  • 33) Kenji Ishikawa, Yuichi Yamazaki, Satoshi Yamasaki, Takuya Ozaki, Yasushi Ishikawa, Shuichi Noda, and Seiji Samukawa.
    • Using in-vacuo electron-spin-resonance and infrared spectroscopy technique in the analysis of surface reactions of low-k films during/after plasma processes.
      • AVS 51th International Symposium American Vacuum Society (AVS), (Anaheim, CA, U. S. A., November 14-17, 2004), PS1-MoM6, p. 62
  • 34) Satoshi Yamasaki, and Kenji Ishikawa.
    • Dangling bond creation and annihilation during plasma processes studied by in-situ ESR technique.
      • AVS 51st International Symposium American Vacuum Society (AVS), (Anaheim, CA, U. S. A., November 14-17, 2004), PS-ThA4, p. 140
  • 35) Yuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki.
    • Structural change in diamond by hydrogen plasma treatment at room temperature.
      • 10th International Conference New Diamond Science and Technology (ICNDST-10), (Tsukuba, Japan, May 11-14, 2005), P5-3, p. 21.
  • 36) Yuichi Yamazaki, Kenji Ishikawa, Seiji Samukawa, Norikazu Mizuochi, and Satoshi Yamasaki.
    • Defect creation in diamond by hydrogen plasma treatment at room temperature.
      • 23rd International Conference on Defects in Semiconductors (ICDS-23), (Hyogo, Japan, July 24 -29, 2005), Th-P17, p. 290.
  • 37) Hiroshi Kudo, Kenji Ishikawa, Y. Mishima, S. Satou, F. Kihara, M. Okamoto, T. Ito, Y. Suzuki, T. Nomura, M. Kawano, K. Nishikawa, and Y. Ozaki.
    • Efficient reduction of standby leakage current in LSIs for use in mobile devices.
      • Ext. Abst. the 2005 International conference on Solid State Devices and Materials (SSDM), (Kobe, September 13-15, 2005), pp. 878-879.
  • 38) Junya Nakahira, Kenji Ishikawa, N. Nishikawa, M. Hayashi, A. Asneil, Y. Nakata, Y. Mizushima, H. Kudo, T. Kurahashi, Y. Mishima, Y. Takigawa, M. Nakaishi, and K. Watanabe.
    • Low temperature dry cleaning technology using formic acid in Cu/Low-k multilevel interconnects for 45 nm node and beyond.
      • Advanced Metallization Conference (AMC) 2005, (Colorado, U. S. A., September 27-29, 2005), pp. 569-574.
  • 39) Kenji Ishikawa, Yuichi Yamazaki, Satoshi Yamasaki, Shuichi Noda, Yasushi Ishikawa, and Seiji Samukawa.
    • Vacuum-ultraviolet photon irradiation effects in fluorocarbon plasmas on SiO2 etching surface reactions using in vacuo electron-spin-resonance.
      • AVS 52nd International Symposium American Vacuum Society (AVS), (Boston, MA, U. S. A., October 31-November 4, 2005), PS-TuA6, p.97.
  • 40) Kenji Ishikawa, Yuichi Yamazaki, Satoshi Yamasaki, Shuichi Noda, Yasushi Ishikawa, and Seiji Samukawa.
    • Plasma emission irradiation effects on etching surface reactions: Analysis using in-vacuo electron-spin-resonance technique.
      • International conference on reactive plasmas and Symposium on Plasma processing (ICRP 6/SPP 23), (Sendai, Japan, January 24-27, 2006), P-2A-38, p. 467.
  • 41) Yuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, Seiji Samukawa, and Satoshi Yamasaki.
    • Structural damage of diamond by oxygen ion beam exposure.
      • International conference on reactive plasmas and Symposium on Plasma processing (ICRP 6/SPP 23), (Sendai, Japan, January 24-27, 2006), G-3A-5, p. 91.
  • 42) Masakazu Sugiyama, Kenji Ishikawa, Isao Gunji, Yamashita, and Takayuki Ohba.
    • Reduction of copper surface with formic acid for 32-nm-node ULSI metallization: Surface kinetics study.
      • The 209th Electrochemical Society Spring Meeting (ECS) (Colorado, U.S.A., May 7-12, 2006), vol. 601, p. 828.
  • 43) Hiroshi Kudo, Kenji Ishikawa, R. Tanabe, H. Fukutome, Y. Mishima, S. Satou, T. Sugii, F. Kihara, M. Okamoto, M. Yoshimura, T. Sugimachi, H. Hashimoto, and M. Ohtsuki.
    • Large reduction in standby power consumption achieved with stress-controlled SRAM cell layout.
      • Ext. Abst. the 2006 International conference on Solid State Devices and Materials (SSDM), (Yokohama, Japan, September 12-15, 2006), H-2-2, pp. 172-173.
  • 44) Masakazu Sugiyama, Kenji Ishikawa, Masafumi Nakaishi, Koichi Yamashita, and Takayuki Ohba.
    • Reaction mechanism of low-temperature damageless cleaning of Cu2O by HCOOH.
      • Advanced Metallization Conference (AMC) 2006: 16th Asian Session, (Tokyo, September 25-27, 2006), No. 3-6, pp. 111-116.
  • 45) Hiroshi Kudo, Kenji Ishikawa, M. Nakaishi, A. Tsukune, S. Ozaki, Y. Nakata, S. Akiyama, Y. Mizushima, M. Hayashi , Ade A. Akbar, T. Kouno, H. Iwata, Y. Iba, T. Ohba, T. Futatsugi, T. Nakamura, and T. Sugii.
    • Enhancing yield and reliability by applying dry organic acid vapor cleaning to copper contact via-bottom for 32-nm nodes and beyond.
      • The 11th International Interconnect Technology Conference (IITC) 2008, (San Francisco, June 10-12, 2008), pp. 93-96.
  • 46) K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, H. Ohta, H. Nakagawa, S. Hayashi, S. Noda, Kenji Ishikawa, M. Yoshimaru, and K. Ono.
    • A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site.
      • 2008 IEEE International Electron Devices Meeting (IEDM), (San Francisco, U.S.A., December 15-17, 2008), 18-2, pp. 443-447.

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Copyright Kenji Ishikawa (c) 2009-2020 Center for Low-temperature plasma sciences, Nagoya University.

Last-modified: 2020-11-20 (金) 22:47:58