ProceedingIntern12

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2012年の国際会議リスト

  • 176) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • (Best poster award) Modification of ArF photoresist caused by irradiation of fluorocarbon plasma-beam.
      • The 14th International Workshop on Advanced Plasma Processing and Diagnostics, The 2nd Workshop for NU-SKKU Joint Institute for Plasma-NanoMaterials, (Kyushu University, Fukuoka, Japan, Jan. 7-8, 2012).
  • 177) Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, and Masaru Hori.
    • Mechanism of generating ions and radicals in C3F6O plasma.
      • The 14th International Workshop on Advanced Plasma Processing and Diagnostics, The 2nd Workshop for NU-SKKU Joint Institute for Plasma-NanoMaterials, (Kyushu University, Fukuoka, Japan, Jan. 7-8, 2012).
  • 178) Keigo Takeda, Atsushi Fukushima, Yusuke Abe, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Surface loss probability of hydrogen radical on silicon thin film in SiH4/H2 plasma CVD.
      • 8th EU-Japan Joint Symposium on Plasma Processing (JSPP2012) at Nara, Japan
  • 179) Masaru Hori, Makoto Sekine, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, and Mineo Hiramatsu.
    • (INVITED) Advanced plasma nano science and technology for synthesis of nano-graphenes.
      • iPlasmaNano-III, (Nanyang Executive Centere, Singapore, Feb. 26 - Mar. 1, 2012). K-5
  • 180) Makoto Sekine, Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, and Masaru Hori.
    • (INVITED) Formation of 10-nm organic pillars by plasma etch with Pt particle masks and their field emission properties.
      • iPlasmaNano-III, (Nanyang Executive Centere, Singapore, Feb. 26 - Mar. 1, 2012), I-22.
  • 181) Atsushi Fukushima, Yusuke Abe, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Relationship between silicon thin film property and flux ratio of H radical to silicon growth precursor in SiH4/H2 plasma CVD.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 5p-A04OA, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 182) Hiroshi Hashizume, Takayuki Ohta, T. Mori, Masafumi Ito, Fendong Jia, Keigo Takeda, Kenji Ishikawa, and Masaru Hori.
    • Effect of atomic oxygen on inactivation of spores of P. digitatum by low-temperature atmospheric-pressure plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 7a-A05OA, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 183) Shang Chen, Yi Lu, Ryosuke Kometani, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • The role of hydrogen radical on plasma damaged gallium nitride.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 5p-C06OC, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 184) Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori.
    • Field emission properties of 10-nm organic nanopillars fabricated by H2/N2 mixture gas plasma etching.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 7a-C06OC, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 185) Tatsuya Hagino, Hiroyuki Kano, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Effect of electrode materials on synthesis of nano-graphene by alcohol in-liquid plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), 8a-S06OD, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 186) Takehiro Hiraoka, Noboru Ebizuka, Keigo Takeda, Takayuki Ohta, Kenji Ishikawa, Masafumi Ito, K. Kawase, Makoto Sekine, and Masaru Hori.
    • Terahertz time-domain spectroscopy for Penicillium digitatum sterilization using non-equilibrium atmospheric pressure plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P1021A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 187) Kenji Ishikawa, Sachiko Iseki, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Hiroyuki Kano, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Real time electron spin resonance observation of Penicillium digitatum spores interacted with plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P1023A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 188) Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Loss kinetics of hydrogen radicals in silane plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2009A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 189) Naoya Sumi, Kenji Ishikawa, Hideo Horibe, Akihiko Kono, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Analysis of surface reactions mechanism on organic materials with H radical irradiation by real-time / in-situ electron spin resonance.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2010A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 190) Masanori Kato, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Three dimensional investigation of activated species in O2/Ar nonequilibrium atmospheric pressure plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2011A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 191) Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, and Masaru Hori.
    • Mechanism of generating ions and radicals in C3F6O plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2029A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 192) Ryosuke Kometani, Shang Chen, Yi Lu, Cao David, Kenji Ishikawa, Hiroki Kondo, Takashi Egawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori.
    • Interactions with plasmas on gallium nitride at high temperature.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2037A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 193) Yi Lu, Shang Chen, Ryosuke Kometani, Kenji Ishikawa, Hiroshi Kondo, Keigo Takeda, Makoto Sekine, Takashi Egawa, Hiroshi Amano, and Masaru Hori.
    • Depth profiles on stoichiometry of plasma-etched GaN.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2038A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 194) Tatsuya Komuro, Keigo Takeda, Kenji Ishikawa, Makoto Sekine, Y. Ohya, Hiroki Kondo, and Masaru Hori.
    • Effect of DC-bias superposed to the upper electrode of dual-frequency capacitively coupled plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2039A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 195) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, A. Yamazaki, A. Ito, H. Matsumoto, Makoto Sekine, and Masaru Hori.
    • Clarification of highly selective SiO2 etching process using C5HF7 gas.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2040A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 196) Kohei Asano, Hiroshi Yamamoto, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, A. Yamazaki, A. Ito, H. Matsumoto, Makoto Sekine, and Masaru Hori.
    • Formation of smooth surface on 193 nm photoresist by C5HF7/O2/Ar plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2041A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 197) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • In situ XPS anaysis of ArF photoresist surface modified by fluorocarbon ions and radicals.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2042A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 198) Ya Lu, Atsushi Fukushima, Yusuke Abe, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Effect of hydrogen radical injection on plasma enhanced chemical vapor film deposition of microcrystalline silicon.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3021A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 199) Leoyung. Yu, Jun Kuki, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Crystallographic analysis of amorphous carbon films synthesized by radical-injection plasma-enhanced chemical vapor deposition.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3018A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 200) Jun Kuki, Leoyung Yu, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Effects of RF bias on optical properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3026A, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 201) Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori.
    • Evaluation of crystallographic properties of carbon nanowalls by Raman spectroscopy.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3086C, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 202) Tsuyoshi Horibe, S. Mitsuguchi, Hiroyuki Kano, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori.
    • Formation and characteristics of TiO2 nanoparticles-supported carbon nanowalls fabricated employing supercritical fluid.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3088C, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 203) H. Cho, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Electrical properties and crystalline structures of carbon nanowalls grown by CH4/H2 plasma.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P3089C, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 204) Shinpei Amasaki, Takuya Takeuchi, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Noriko Sakurai, Hisataka Hayashi, Itsuko Sakai, Tokuhisa Ohiwa, and Masaru Hori.
    • Investigation of reaction mechanism at sidewall of through si via (TSV) etching.
      • 4th International Symposium on Advance Plasma Science and its Application (ISPlasma2012), P2119A-LN, (Chubu University, Kasugai Japan, Mar. 4-8, 2012).
  • 205) Shang Chen, Yi Lu, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Hiroyuki Kano, Yutaka Tokuda, Makoto Sekine, Takashi Egawa, Hiroshi Amano, and Masaru Hori.
    • Photoluminescence recovery of plasma damaged GaN by hydrogen radical annealing.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-42.
  • 206) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, A. Ito, T. Suzuki, H. Matsumoto, Makoto Sekine, and Masaru Hori.
    • Clarification of mechanisms of highly selective SiO2 etching process using C5HF7 gas.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-40.
  • 207) Yi Lu, Shang Chen, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Keigo Takeda, Makoto Sekine, Takashi Egawa, Hiroshi Amano, and Masaru Hori.
    • Stoichiometry protection to as-etched GaN surface using high temperature N2 plasma assistance.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-41.
  • 208) Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori.
    • Subsequent temporal change of gaseous radical density in H2/N2 plasmas after different processes.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-31.
  • 209) Shinpei Amasaki, Takuya Takeuchi, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Masaru Hori, N. Sakurai, Hisataka Hayashi, Itsuko Sakai, and T. Ohiwa.
    • Influence of SiF4 gas addition to sidewall reaction during deep si etching using SF6/O2 plasma.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-37.
  • 210) Kohei Asano, Hiroshi Yamamoto, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Modification of Si-O-Si structures on porous-SiOCH films by O2 plasma exposure and air exposure.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-56.
  • 211) Ryosuke Kometani, Shang Chen, Yi Lu, Cao David, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Takashi Egawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori.
    • Morphology on GaN exposed to plasmas at high temperature.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-43.
  • 212) Atsushi Fukushima, Yusuke Abe, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Relationship between silicon thin film property and flux ratio of H radical in SiH4/H2 plasma CVD.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-60.
  • 213) Ya Lu, Atsushi Fukushima, Yusuke Abe, Y. J. Kim, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • The effect of the deposition rate of microcrystalline silicon deposition using a hydrogen radical injection plasma source.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-61.
  • 214) Hiroko Moriyama, Kenji Ishikawa, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Hiromasa Tanaka, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • ESR signals arisen from Penicillium digitatum spores.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-20.
  • 215) Hiromasa Tanaka, Kae Nakamura, Sachiko Iseki, H. Kajiyama, Hiroko Moriyama, Kenji Ishikawa, Hiroyuki Kano, F. Kikkawa, M. Mizuno, and Masaru Hori.
    • Plasma-activated medium effectively killed glioma cancer cells.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-21.
  • 216) Fengdong Jia, Keigo Takeda, Kenji Ishikawa, Hiroyuki Kano, Jagath Kularatne, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Behaviours of reactive oxygen species generated by an Ar/O2 atmospheric pressure plasma jet.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-22.
  • 217) Noboru Ebizuka, Minoru Sasaki, W. Aoki, A. Bianco, F. Maria Zerbi, Makoto Sekine, Kenji Ishikawa, Hiroki Kondo, and Masaru Hori.
    • Fabrication methods for volume binary grating and novel immersion grating by means of MEMS technologies.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-26.
  • 218) Satomi Tajima, Kenji Ishikawa, Toshio Hayashi, and Masaru Hori.
    • Development of a Si dry chemical etching technique using NO/F2 gas mixtures without using plasmas.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-39.
  • 219) Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and K. Suu.
    • O2 and N2 addition effect for Si etching in CF4 plasma.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-38.
  • 220) Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Fengdong Jia, Keigo Takeda, Kenji Ishikawa, and Masaru Hori.
    • Efficiency of ground-state atomic oxygen for inactivation of P. digitatum spores evaluated by atmospheric pressure oxygen radical source.
      • 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2012), (Inuyama, Japan, Mar. 9-10, 2012), P-19.
  • 221) Kenji Ishikawa, Sachiko Iseki, Hiroko Moriyama, Hiromasa Tanaka, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Electron spin resonance (ESR) observation of radicals on biological organism interacted with plasmas.
      • 2012 Spring Meeting of the Material Research Society, (San Francisco, USA, April 9 - 13, 2012), WW2.6
  • 222) Takehiro Hiraoka, Noboru Ebizka, Keigo Takeda, Takayuki Ohta, Kenji Ishikawa, Masafumi Ito, Kodo Kawase, Makoto Sekine, and Masaru Hori.
    • Terahertz time-domain spectroscopic sensing of Penicillium digitatum inactivated by non-equilibrium atmospheric pressure plasmas.
      • 2012 Spring Meeting of the Material Research Society, (San Francisco, USA, April 9 - 13, 2012), WW7.3
  • 223) Yusuke Abe, Masaru Hori, Atuschi Fukushima, Lu Ya, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, M. Sekine.
    • Measurement of the flux ratio of hydrogen atom to film precursor for microcrystalline silicon solar cell.
      • 5th International Workshop on Plasma Spectroscopy (IPS), (France, May 13 - 16, 2012), 2-4.
  • 224) Hiroki Kondo, T. Hagino, Kenji Ishikawa, H. Kano, M. Sekine, M. Hori.
    • Critical factors of synthesis rate and crystallinity of nanographene in ultrahigh-speed nanographene synthesis employing alcohol liquid plasma.
      • 4th International Conference on Microelectronics and Plasma Technology (ICMAP 2012), (Jeju, Korea, 2012), ON-03.
  • 225) H. Shimoeda, H. Kondo, Kenji Ishikawa, M. Hiramatsu, M. Sekine, M. Hori.
    • Edge and surface modification of nanographenes in carbon nanowalls by hydrogen peroxide treatments.
      • 4th International Conference on Microelectronics and Plasma Technology (ICMAP 2012), (Jeju, Korea, 2012).
  • 226) Makoto Sekine, Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Y. Setsuhara, M. Shiratani, and M. Hori.
    • (PLENARY) Formation of 10-nm organic pillars by plasma etch with Pt particle masks and their field emission properties.
      • The 15th Korea-Japan workshop for Advanced Plasma Process and Diagnostics, (Sungkyunkwan University, Korea, June 7-8, 2012).
  • 227) T. Tsutsumi, M. Hori, M. Sekine, Kenji Ishikawa, K. Takeda, H. Kondo, T. Ohta, and M. Ito.
    • High resolution temperature monitoring system of semiconductor substrate using fourier domain low coherence interferometer.
      • The 15th Korea-Japan workshop for Advanced Plasma Process and Diagnostics, (Sungkyunkwan University, Korea, June 7-8, 2012). S02.
  • 228) Y. Kondo, Y, Miyawaki, Kenji Ishikawa, T. Hayashi, M. Sekine, K. Takeda, H. Kondo, and M. Hori.
    • Reaction mechanism of plasma etching using hydrogen-containing fluorocarbon gas.
      • The 15th Korea-Japan workshop for Advanced Plasma Process and Diagnostics, (Sungkyunkwan University, Korea, June 7-8, 2012). S11.
  • 229) Hiroshi Hashizumi, Takayuki Ohta, Masafumi Ito, Fengdong Jia, Keigo Takeda, Kenji Ishikawa, and Masaru Hori.
    • Inactivation efficiencies of reactive oxygen species on spores by atmospheric‐pressure O2/Ar plasma inactivation of Penicilium degitatum.
      • International Conference on Plasma Science, (Edinburgh, UK, July 2012) July 9, 16:45 2E-5.
  • 230) Makoto Sekine, Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Toshio Hayashi, and Masaru Hori.
    • Anaysis of photoresist surface modified by fluorocarbon ions and radicals.
      • International Conference on Plasma Science, (Edinburgh, UK, July 2012) July 10, 2P-116.
  • 231) Masaru Hori, Kenji Ishikawa, Naoya Sumi, Keigo Takeda, Satomi Tajima, Hiroki Kondo, Makoto Sekine, Akihiko Kono, and Hideo Horibe.
    • Real time in situ electron spin resonance (ESR) study of surface reaction on polymer interacted with plasma.
      • International Conference on Plasma Science, (Edinburgh, UK, July 2012) July 10, 2P-186.
  • 232) Kenji Ishikawa, Hiromasa Tanaka, Hiroko Moriyama, Sachiko Iseki, Keigo Takeda, Satomi Tajima, Hiroki Kondo, Makoto Sekine, Masaru Hori, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, and Hiroyuki Kano.
    • Electron spin resonance (ESR) study of radicals on biological organism created by interaction with plasma.
      • International Conference on Plasma Science, (Edinburgh, UK, July 10, 2012), 2P-187.
  • 233) Masaru Hori, Hiroki Kondo, Tatsuya Hagino, Kenji Ishikawa, Keigo Takeda, Hiroyuki Kano, and Makoto Sekine.
    • High-speed synthesis and crystalinity control of nanographene using in-liquid plasma in alcohol.
      • XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESSCAMPIG), (Viana do Castelo, Portugal, July 10-14, 2012)
  • 234) M. Hori , M. Tanaka, Kenji Ishikawa, H. Kondo, K. Takeda, M. Sekine, F. Kikkawa, K. Nakamura, M. Hayashi, H. Kajiyama, M. Mizuno, H. Ohta, M. Ito, and H. Kano.
    • (PLENARY) Atmospheric pressure plasma processes and their diagnostics for life sciences.
      • The 2nd International Symposium for Plasma Biosciences, Plasma Bioscience Research Center, Kwangwoon University, Seoul, Korea, Aug. 12-14, 2012
  • 235) T. Takeuchi, M. Sekine, K. Ishikawa, H. Kondo, K. Takeda and M. Hori.
    • Investigation of modification of ArF photoresist during plasma etching processes.
      • 14th Annual TECHCON Conference Technology & Talent for the 21st Century, (Renaissance Austin Hotel, Austin, Texas, Sep. 10-11, 2012), 3. 6.
  • 236) H. Kondo, K. Yasuda, K. Ishikawa, M. Sekine, M. Hiramatsu, M. Hori.
    • Gradual transition of chemical structures at initial growth stage of carbon nanowalls.
      • The European Materials Conference European Materials Research Society Fall Meeting Scientific/Technical Symposia & Exhibition, (Warsaw University of Technology, Warsaw, Poland , September 17-21, 2012).
  • 237) Kenji Ishikawa, Hiroko Moriyama, Naoya Sumi, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Akihiko Kono, Hideo Horibe, Hiromasa Tanaka, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • (INVITED) Real-time / in-situ electron spin resonance analysis of surface reactions on organic / biological materials interacted with plasmas.
      • International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, C-8-I26-010
  • 238) Satomi Tajima, Kenji Ishikawa, Toshio Hayashi, and Masaru Hori.
    • Chemical dry etching of poly-Si and single crystal Si using NO and F2 gas mixture without using plasmas.
      • International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, C-8-O27-004
  • 239) Ryosuke Kometani, Kenji Ishikawa, Shang Chen, Yi Lu, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Hiroshi Amano, and Masaru Hori.
    • Surface roughness on plasma-etched gallium nitride (GaN).
      • International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-P25-012
  • 240) A. Malinowski, Makoto Sekine, Masaru Hori, Kenji Ishikawa, Hiroki Kondo, Takuya Takeuchi, Toshiya Suzuki, J. Jakbowski, and L. Lukasiak.
    • Investigation of hydrogen radical kinetics during ArF 193nm photoresist processing for ultimate CMOS technology development.
      • International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-O25-003
  • 241) Toshiya Suzuki, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori.
    • Field electron emitter fabricated by plasma etching of organic material.
      • International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-O25-005
  • 242) Takuya Takeuchi, Shinpei Amasaki, Makoto Sekine, Keigo Takada, Hiroki Kondo, Kenji Ishikawa, and Masaru Hori.
    • In situ XPS anaysis of ArF photoresist modification caused by fluorocarbon ions and radicals.
      • International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-P25-009
  • 243) Takanao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori.
    • Effects of hydrogen peroxide treatment on nanostructures in carbon nanowalls.
      • International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan, D-4-O24-012
  • 244) T. Ohta, H. Hashizume, M. Ito, K. Takeda, Kenji Ishikawa, M. Hori.
    • Oxidative inactivation mechanism of fungal spores employing atmospheric-pressure oxygen radical source.
      • International Univon of Materials Research Societies (IUMRS), International Conference on Electronic Materials(ICEM), September 23-28, 2012, Yokohama, Japan,
  • 245) H. J. Cho, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori.
    • Edge termination on electrical properties of vertically-grown graphene sheets employing N2/H2 mixture plasma.
      • 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto International Conference Center, Kyoto, Japan, September 25-27, 2012, PS-13-13
  • 246) Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Hiroyuki Kano, Fumitaka Kikkawa, and Masaru Hori .
    • (Award) Analysis of the intracellular molecular mechanisms of plasma-activated medium mediated cell death in glioma brain tumor cells.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 1L-O05
  • 247) A. Fukushima, Y. Abe, Y. Lu, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, and M. Hori .
    • Evaluation of relationship between μc-Si film property and flux ratio of H radicals to film precursors.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2Gr-O07
  • 248) Yusuke Abe, Atsushi Fukushima, Ya Lu, Youn Joon Kim, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori.
    • Spectroscopic determination of radical densities in SiH4/H2 plasma.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 1-P19
  • 249) Takayoshi Tsutsumi, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, and Masaru Hori.
    • Non-contact temperature measurement of sapphire substrate for GaN using frequency domain low coherence interferometry.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 1-P26
  • 250) Takeyoshi Horibe, Hiroki Kondo, Hiroyuki Kano, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, Masaru Hori.
    • Two-step supporting of high-density metal nanoparticle catalysts on carbon nanowalls using supercritical fluid.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 1-P85
  • 251) Lu Ya, Astushi Fukushima, Yusuke Abe, Youn J. Kim, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori .
    • Microcrystal orientation of silicon thin film deposited with hydrogen radical injection plasma enhanced CVD.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P14
  • 252) Kuangda Sun, Keigo Takeda, Hiroki Kondo, Satomi Tajima, Kenji Ishikawa, Makoto Sekine, Masaru Hori, and Hitoshi Itoh.
    • The formation of the insulating film with atmospheric pressure plasma-enhanced chemical vapor deposition by hexamethyldisiloxan mist.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P17
  • 253) T. Komuro, K. Takeda, Kenji Ishikawa, M. Sekine, Y. Ohya, H. Kondo, and M. Hori.
    • Highly selective etching of dielectrics over SiC film by dc superposed dual-frequency CCP.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P18
  • 254) Kohei Asano, Yudai Miyawaki, Kenji Ishikawa, Makoto Sekine, Keigo Takeda, Azumi Ito, Hirokazu Matsumoto, Hiroki Kondo, and Masaru Hori.
    • Mechanism and control of roughness formation on ArF photoresist by C5HF7 etching plasma.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P19
  • 255) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Azumi Ito, Hirokazu Matsumoto, M. Sekine, and M. Hori.
    • Studies on plasma etching of Si3N4 employing new alternative gas, C5HF7.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P20
  • 256) Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, Masaru Hori.
    • Generation mechanism of ions and radicals in CHxFy etching plasmas.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P21
  • 257) Jongyun Park, Takuya Takeuchi, Jiadong Cao, Kenji Ishikawa, Yuichi Setsuhara, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Change of GaAs surface properties by irradiation of Cl2 ions.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P23
  • 258) Ryosuke Kometani, Shang Chen, Yi Lu, David Cao, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Takashi Egawa, Horishi Amano, Makoto Sekine, and Masaru Hori.
    • Observation of plasma-exposed GaN surface at high temperature.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P24
  • 259) Z. Liu, S. Chen, Y. Lu, R. Kometani, Kenji Ishikawa, Hiroyuki Kano, K. Takeda, H. Kondo, M. Sekine, T. Egawa, H. Amano, and M. Hori.
    • Recovery of plasma-damaged GaN by employing exposure of radicals.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P25
  • 260) Toshiya Suzuki, Arkadiusz Malinowski, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, Makoto Sekine, and Masaru Hori.
    • Influence of last condition in plasma reactor on gaseous radical density.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P26
  • 261) Takehiro Hiraoka, Keigo Takeda, Takayuki Ohta, Noboru Ebitsuka, Hiroki Kondo, Kenji Ishikawa, Kodo Kawase, Masafumi Ito, Makoto Sekine, and Masaru Hori.
    • Optical properties of carbon nano walls in terahertz frequencies region.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P45
  • 262) J. Cao, R. Kometani, J. Park, Y. Lu, S. Chen, Kenji Ishikawa, M. Sekine, M. Hori.
    • Research on plasma etching of gallium based compound semiconductor.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P46
  • 263) Youn Joon Kim, Yi Lu, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori .
    • Low temperature deposition and characteristics of GaN thin film by HF-PECVD.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P80
  • 264) Masaru Hori, Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Young Joon Kim, and Makoto Sekine.
    • Reconsideration on effects of H radicals on thin film surfaces in plasma enhanced chemical vapor deposition employing SiH4/H2 gases.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P96
  • 265) Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Surface reaction of F2, NO, F, and FNO on Si during the plasmaless Si etching in NO/F2 gas mixture.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 2-P126
  • 266) Hiroshi Hashizume, Susumu Nagano, Takayuki Ohta, Masafumi Ito, Keigo Takeda, Kenji Ishikawa, Masaru Hori.
    • Disinfection of fungal spores by atmospheric pressure radical source.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 3P-03
  • 267) Kenji Ishikawa, Hiroko Mizuno, Hiromasa Tanaka, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • Real-time electron spin resonance study on fungal spores during inactivation.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 3P-04
  • 268) Leyong Yu, Jun Kuki, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori.
    • Effect of nitrogen doping on photoconductivity of amorphous carbon films grown by radical-injection plasma-enhanced chemical vapor deposition.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 3P-125
  • 269) Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori.
    • Effects of hydroxyl radical on nanographene surfaces in carbon nanowalls.
      • APCPST 25th SPSM, October 2-5, 2012, Kyoto Japan, 3P-129
  • 270) Yu Arai, Yusuke Noto, Yousuke Goto, Seiji Takahashi, Akihiko Kono, Tatsuo Ishijima, Kenji Ishikawa, Masaru Hori, and Hideo Horibe.
    • Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals.
      • 7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD-7), Osaka, (October 8-12, Japan)
  • 271) Akihiko Kono, Yu Arai, Yousuke Goto, Seiji Takahashi, Kenji Ishikawa, Masaru Hori, and Hideo Horibe.
    • Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer.
      • 7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD-7), Osaka, (October 8-12, Japan)
  • 272) Keigo Takeda, Jerome Jolibois, Kenji Ishikawa, Hiromasa Tanaka, Hiroyuki Kano, Makoto Sekine, and Masaru Hori.
    • Measurement of activated species generated by 60 Hz excited atmospheric pressure Ar plasma in atmospheric gas.
      • 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. UF3.00005
  • 273) Takayoshi Tsutsumi, Takehiro Hiraoka, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, and Masaru Hori.
    • Temperature measurement of substrate with a thin film using low-coherence interference.
      • 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. UF3.00001
  • 274) Makoto Sekine, Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, and Masaru Hori.
    • Precise plasma process control based on combinatorial plasma etching.
      • 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. NW1.00030
  • 275) Hiroki Kondo, Tatusya Hagino, Keigo Takeda, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, and Masaru Hori.
    • Study on synthesis processes and crystallinity changes of nanographene materials synthesized by alcohol liquid-plasma.
      • 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. NW1.00055
  • 276) Kenji Ishikawa, Yusuke Kondo, Yudai Miyawaki, Toshio Hayashi, Makoto Sekine, Keigo Takeda, Hiroki Kondo, and Masaru Hori.
    • Reaction model for etching surface interacted with hydrofluorocarbon plasmas.
      • 65th Annual Gaseous Electronics Conference (GEC) October 22–26, 2012; Austin, Texas, USA. NW1.00076
  • 277) Kenji Ishikawa, S. Chen, K. Takeda, H. Kondo, M. Sekine, and M. Hori.
    • (INVITED) Healing process of plasma-damaged gallium nitride (GaN).
      • International conference on emerging advanced nanomaterials (ICEAN), Mercure Hotel, Brisbane, Australia, (October 22- 25, 2012) 2B‐IL‐5
  • 278) J. S. Kularatne, Hiroyuki Kano, Masafumi Ito, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori.
    • (title) AC励起大気圧プラズマを用いた下水モニタリング装置の開発.
      • 5th International Symposium of Plasma Center for Industrial Application (PLACIA) and Plasma Application Monodzukuri (PLAM) on Reactivation of Manufacturing in Japan by Plasma-Nano Technology, Science Exchange Plaza, Nagoya Science Park, Nagoya, Japan, October 24, 2012
  • 279) Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Hiroyuki Kano, Fumitaka Kikkawa, and Masaru Hori.
    • (title) プラズマ培養液による脳腫瘍細胞のアポトーシス誘導.
      • 5th International Symposium of Plasma Center for Industrial Application (PLACIA) and Plasma Application Monodzukuri (PLAM) on Reactivation of Manufacturing in Japan by Plasma-Nano Technology, Science Exchange Plaza, Nagoya Science Park, Nagoya, Japan, October 24, 2012
  • 280) Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Feng-Dong Jia, Keigo Takeda, Kenji Ishikawa, and Masaru Hori.
    • (title) ミドリカビ胞子細菌における活性酸素の定量的解析.
      • 5th International Symposium of Plasma Center for Industrial Application (PLACIA) and Plasma Application Monodzukuri (PLAM) on Reactivation of Manufacturing in Japan by Plasma-Nano Technology, Science Exchange Plaza, Nagoya Science Park, Nagoya, Japan, October 24, 2012
  • 281) Kenji Ishikawa, Hideo Horibe, Masafumi Ito, Makoto Sekine, and Masaru Hori.
    • (INVITED) Real time in situ electron spin resonance (ESR) study of free radicals on materials created by plasmas.
      • American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS2-TuA7
  • 282) Yusuke Kondo, Yusuke Kondo, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Toshio Hayashi, Makoto Sekine, Masaru Hori.
    • Mechanism of generating ions and radicals in fluorocarbon plasma investigated by reaction model analysis.
      • American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS2-MoA7
  • 283) Toshiya Suzuki, Toshiya Suzuki, A. Malinowski, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setuhara, Masaharu Shiratani, Makoto Sekine, Masaru Hori.
    • Subsequent temporal change of gaseous h and n radical density in plasma after different processes.
      • American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS1-TuM5
  • 284) R. Kometani, S. Chen, J. Park, J. Cao, Y. Lu, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Hiroshi Amano, Makoto Sekine, Masaru Hori.
    • Control of surface properties on plasma-etched gallium nitride (GaN).
      • American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS2-ThM5
  • 285) Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Evaluation of surface chemical bonding state and surface roughness of chemical dry etched Si using NO and F2 gas mixture.
      • American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS-ThP25
  • 286) Arkadiusz Malinowski, Makoto Sekine, Masaru Hori, Kenji Ishikawa, Hiroki Kondo, Takuya Takeuchi, Toshiya Suzuki, A. Jakubowski, L. Lukasaak, T. Tomaszewski.
    • Investigation of plasma-surface interactions between hydrogen radical and chemically amplified photoresist.
      • American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS2-WeA3
  • 287) Hiroki Kondo, T. Kanda, Mineo Hiramatsu, Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • Crystalline and electrical properties of vertically-laminated carbon nanowalls formed by two-step growth method.
      • American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), GR+AS+NS+SS-ThM9
  • 288) M. Fukasawa, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, H. Matsugai, T. Honda, M. Minami, F. Uesawa, Masaru Hori, and Tetsuya Tatsumi.
    • Interface trap generation by VUV/UV radiation from fluorocarbon plasma.
      • American Vacuum Society (AVS), Tampa, Florida, USA, (October 28-November 2, 2012), PS-ThP14
  • 289) Kenji Ishikawa, H. Mizuno, H. Tanaka, H. Hashizume, T. Ohta, M. Ito, K. Takeda, H. Kondo, M. Sekine, and M. Hori.
    • Plasma-biological surface interaction for food hygiene: real-time in situ electron spin resonance measurements.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), B-3
  • 290) S. Tajima, T. Hayashi, Kenji Ishikawa, M. Sekine, and M. Hori.
    • Evaluation of gas-surface reaction dynamics during the plasmaless Si etching using NO/F2 gas mixture.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), C-3
  • 291) Y. Abe, A. Fukushima, Y. Lu, Y. Kim, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, and M. Hori.
    • High performances of microcrystalline Si thin film formation for a solar cell by measurement and control of hydrogen radicals in the SiH4/H2 plasma.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), E-2
  • 292) Z. Liu, S. Chen, Y. Lu, R. Kometani, Kenji Ishikawa, H. Kano, K. Takeda, H. Kondo, M. Sekine, T. Egawa, H. Amano, and M. Hori.
    • An in-situ sequential H and N radical exposure process for recovery of plasma-damaged GaN.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), H-3
  • 293) M. Fukasawa, H. Matsugai, T. Honda, Y. Miyawaki, Y. Kondo, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, K. Nagahata, F. Uesawa, M. Hori, and T. Tatsumi.
    • Photon-stimulated surface reaction and generation of damage to hydrogenated silicon nitride in fluorocarbon plasma.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), H-1
  • 294) T. Komuro, K. Takeda, Kenji Ishikawa, M. Sekine, Y. Ohya, H. Kondo, and M. Hori.
    • Highly selective etching of gap-fill dielectrics over SiC and SiN by the dc-bias superposed dual-frequency CCP.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-14
  • 295) T. Hayashi, Kenji Ishikawa, M. Sekine, M. Hori.
    • Quantum chemical investigations for excitation dissociations of C5F8 and C5HF7 etching gases.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-16
  • 296) K. Asano, Y. Miyawaki, Kenji Ishikawa, M. Sekine, K. Takeda, A. Ito, H. Matsumoto, H. Kondo, and M. Hori.
    • A reduction of degradation on ArF photoresist by C5HF7 plasma etching and its mechanism.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-17
  • 297) Y. Miyawaki, Y. Kondo, M. Sekine, Kenji Ishikawa, T. Hayashi, K. Takeda, A. Ito, H. Matsumoto, and M. Hori.
    • Studies on plasma etching of Si3N4 in capacitively coupled plasma employing C5HF7.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-18
  • 298) R. Kometani, S. Chen, M. Liu, Kenji Ishikawa, H. Kondo, K. Takeda, T. Egawa, H. Amano, M. Sekine, and M. Hori.
    • A high temperature plasma etching of GaN and its reaction mechanism.
      • The 34th International Symposium on Dry Process (DPS), Takada Hall, The University of Tokyo, Japan (November 15-16, 2012), P-61

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Copyright Kenji Ishikawa (c) 2009-2020 Center for Low-temperature plasma sciences, Nagoya University.

Last-modified: 2020-11-20 (金) 22:46:07