ProceedingIntern10

国際会議 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | before 2009

2010年の国際会議リスト

  • 47) Kenji Ishikawa, Makoto Sekine, and Masaru Hori.
    • (INVITED) Nanoscale engineering for plasma etching of future device fabrication.
      • 10th International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop, (Nagasaki Univ., Nagasaki, Japan, Jan. 8-10, 2010), p. 7.
  • 48) C. S. Moon, K. Takeda, Makoto Sekine, Y. Setsuhara, M. Shiratani, Kenji Ishikawa, H. Kondo and Masaru Hori.
    • A well-established compact combinatorial etching process employing inductively coupled H2/N2 plasma.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), 9a-A06OA, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p.84
  • 49) S. Chen, H. Kano, S. Den, K. Takeda, Kenji Ishikawa, H. Kondo, M. Sekine and Masaru Hori.
    • Radical kinetics in N2-H2 plasma generated by novel high density radical source.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), 9a-B03OB, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 86.
  • 50) Y. Abe, C. S. Moon, S. Kawashima, K. Takeda, H. Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori.
    • Surface loss probabilities of h atom on various silicon thin films.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA015A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 124.
  • 51) H. Inui, Y. Matsudaira, N. Yoshida, N. Iwaki, T. Kawasumi, K. Takeda, Kenji Ishikawa, H. Kondo, Makoto Sekine and Masaru Hori.
    • Measurement of H radical density in H2/Ar nonequilibrium atmospheric pressure plasma.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA016A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 124.
  • 52) A. Malinowski, Masaru Hori, Makoto Sekine, T. Suzuki, H. Yamamoto, H. Kondo, Kenji Ishikawa, A. Jakubowski, L. Lukasiak and D. Tomaszewski.
    • Modeling of radical tranformation under ‘pape’ structure and method of estimation for surface loss probabilities of radicals.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA020A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 126.
  • 53) E. Shibata, Makoto Sekine, Kenji Ishikawa, H. Kondo, H. Okamoto and Masaru Hori.
    • Porous SiOCH low-k film etch process and its surface reactions employing an alternative fluorocarbon gas C5F10O.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA027A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 130.
  • 54) Y. Miyawaki, K. Takeda, A. Ito, M. Nakamura, H. Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori.
    • SiO2 cotact hole etch mechanism using environment-friendly new gas, C5F7H.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA028A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 130.
  • 55) T. Takeuchi, Makoto Sekine, H. Toyoda, H. Kondo, Kenji Ishikawa, K. Takeda, S-Y. Kang, I. Sawada and Masaru Hori.
    • Analysis of ArF photoresist modified by fluorocarbon ion bombardment.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA030A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 131.
  • 56) S. Chen, Y. Nagoe, M. Nakai, Kenji Ishikawa, H. Kondo, H. Kano, K.Takeda, T. Tokuda, Makoto Sekine and Masaru Hori.
    • Deep-level defect passivation by high density hydrogen radical exposure on ion irradiated Si.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA031A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 132.
  • 57) H. Kuroda, H. Sugiura, H. Yamamoto, M. Ito, T. Ohta, K. Takeda, H. Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori.
    • Measurement of Si wafer temperature with metal thin film during plasma process using low-coherence interferometer.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA032A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 132.
  • 58) H. Shimoeda, Y. Miyawaki, K. Takeda, Kenji Ishikawa, H. Kondo, M. Hiramatsu, Makoto Sekine and Masaru Hori.
    • Effect of oxygen etching on the morphologies of carbon nanowalls.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA082C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 157.
  • 59) H. Mikuni, T. Kanda, S. Kondo, W. Takeuchi, K. Yamakawa, K. Takeda, Kenji Ishikawa, H. Kondo, M. Hiramastu, Makoto Sekine, and Masaru Hori.
    • Initial nucleation in carbon nanowalls growth on Si and SiO2 surface.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA084C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 158
  • 60) S. Kondo, K. Yasuda, H. Kondo, Kenji Ishikawa, M. Hiramatsu, Makoto Sekine and Masaru Hori.
    • Effect of ion irradiation on carbon nanowalls growth.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA085C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 159.
  • 61) K. Mase, S. Mitsuguchi, S. Kondo, H. Kano, Kenji Ishikawa, H. Kondo, M. Hiramatsu, Makoto Sekine and Masaru Hori.
    • Effect of plasma surface treatments on supporting of platinum nanoparticles to graphite materials in supercritical carbon dioxide.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA086C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 159.
  • 62) S. Iseki, S. Uchida, S. Takashima, T. Ohta, M. Ito, Y. Higashijima, H. Kano, K. Takeda, H. Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori.
    • Low-temperature treatment using high-density non-equilibrium atmospheric of pressure plasma.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PA116C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 174.
  • 63) Y. Matsudaira, H. Inui, H. Kano, K. Takeda, Kenji Ishikawa, H. Kondo, Makoto Sekine and Masaru Hori.
    • Synthesis of amorphous carbon films using nonequilibrium atmospheric-pressure plasma.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB025A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 189.
  • 64) T. Kino, S. Kondo, W. Takeuchi, H. Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori.
    • Fabrication of carbon nanomaterials synthesized by plasma enhanced chemical vapor deposition for solar cell applications.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB032A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 192.
  • 65) S. Kawashima, Y. Abe, K. Takeda, Kenji Ishikawa, H. Kondo, M, Sekine and Masaru Hori.
    • Diagnostics in high pressure SiH4/H2 plasma for deposition of microcrystalline Si.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB033A, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 193.
  • 66) Kenji Ishikawa, K. Takeda, H. Kondo, M.Sekine and Masaru Hori.
    • Siloxane polymer surface modifications by exposure of plasma-beams: A vibrational sum-frequency generation spectroscopy (SFG) study.
      • 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), PB087C, (Meijo University, Nagoya Japan, Mar. 7-10, 2010), p. 220.
  • 67) T. Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, A. Kono and M. Suu.
    • Dissociation channel of c-C4F8 to CF2 radical in reactive plasma.
      • 3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010), (Meijo University, Nagoya Japan, Mar. 11-12, 2010), P-16.
  • 68) Kenji Ishikawa, N. Ebizuka, K. Takeda, H. Kondo, Makoto Sekine and Masaru Hori.
    • Quasi-Bragg grating with sub-wavelength particles.
      • 3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010), (Meijo University, Nagoya Japan, Mar. 11-12, 2010), P-52.
  • 69) T. Kino, H. Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori.
    • Control in optical properties of amorphous carbon films synthesized by plasma enhanced chemical vapor deposition for solar cell applications.
      • International Symposium on Technology Evolution for Silicon Nano-Electronics, (Tokyo Institute of Technology, Tokyo, Japan, June. 3-5, 2010), p. .
  • 70) H. Yamamoto, K. Takeda, H. Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori.
    • Modification of Si-O-Si Structure in Porous SiOCH Films by O2 plasma.
      • 11th International Workshop on Advanced Plasma Processing and Diagnostics, (Ramada Jeju Hotel, Jeju, Korea, July 8-9, 2010), p. .
  • 71) A. Malinowski, W. Takeuchi, Makoto Sekine, Kenji Ishikawa, H. Kondo, T. Kanda, Masaru Hori, L. Lukasiak, A. Jakubowski.
    • Performance estimation of carbon nanowall-based field effect transistor by 3D simulation study.
      • The 40th Solid-State Device Research Conference ESSDERC'2010, (Seville, Spain, September 13-17, 2010)
  • 72) A. Malinowski, L. Lukasiak, A. Jakubowski, D. Tomaszewski, Masaru Hori, Makoto Sekine, Kenji Ishikawa, H. Kondo, T. Suzuki.
    • 3D TCAD simulation study of the influence of line-width roughness on finFET performance for the 22-nm technology node.
      • The 10th Conference "Electron Technology ELTE 2010", (Wroclaw, Poland, September 22 - 25, 2010)
  • 73) Shang Chen, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Keigo Takeda, Hiroki Kano, Yutaka Tokuda, Makoto Sekine, Masaru Hori.
    • Analysis of gallium nitride (GaN) surface interacted with chlorine etching plasma beams.
      • 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), BT1.00005, p. 11.
  • 74) Kenji Ishikawa, N. Sumi, A. Kono, H. Horibe, K. Takeda, H. Kondo, Makoto Sekine, Masaru Hori.
    • In situ electron spin resonance study for plasma-surface interactions.
      • 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), CTP.00116, p. 36.
  • 75) Fengdong Jia, Naoya Sumi, Kenji Ishikawa, Hiroyuki Kano, Hirotoshi Inui, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori.
    • Time dependence measurement of electron density and temperature of a 60 Hz nonequilibrium atmospheric pressure plasma by laser Thomson scattering.
      • 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), CTP.00170, p. 46.
  • 76) Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, A. Kono, K. Suu.
    • Dissociation channels of c-C4F8 to CF2 radical in reactive plasma.
      • 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), DTP.00135, p. 80.
  • 77) Masaki Minami, Shigetaka Tomiya, Kenji Ishikawa, Ryosuke Matsumoto, Masanaga Fukasawa, Fumikatsu Uesawa, Masaru Hori, and Tetsuya Tatsumi.
    • Analysis of GaN damage induced by Cl2/SiCl4/Ar plasma.
      • 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), KWP.00053, p. 117.
  • 78) Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Hirotaka Toyoda, Makoto Sekine, Masaru Hori, Ikuo Sawada, Song-Yun Kang.
    • Study on modified surface layer of photoresist employing fluorocarbon ion beam and radicals.
      • 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), KWP.00062, p. 119.
  • 79) Hiroshi Yamamoto, Kohei Asano, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Masaru Hori.
    • Modification of Si-O-Si structure in porous SiOCH low-k films with ions, radicals, and VUV radiation in O2 plasma.
      • 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), QR2.00005, p. 154.
  • 80) Yusuke Abe, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Masaru Hori.
    • Measurement of surface loss probabilities of hydrogen radicals in plasma-enhanced Si CVD process for solar cell.
      • 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas(GEC/ICRP), (Maison de la Chimie, Paris, France, October 4-8, 2010), SF3.00005, p. 160.
  • 81) S. Kawashima, Yusuke Abe, Keigo Takeda, Kenji Ishikawa, H. Kondo, Makoto Sekine, Masaru Hori.
    • High-speed growth and crystallinity control of microcrystalline silicon film employing hydrogen radical-injection plasma-enhanced chemical vapor deposition.
      • Third International workshop on Thin Film Silicon Solar Cells, Nagasaki, Japan, October 11-14, 2010
  • 82) Tsuyoshi Yamaguchi, Keigo Takeda, Chishio Koshimizu, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori.
    • Highly selective etching of SiOCH over sic films by dual frequency CCP with dc bias superimposed to upper electrode.
      • 57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS-MoM-11, .
  • 83) Hiroshi Yamamoto, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Masaru Hori, Tsubasa Imamura, Hisataka Hayashi, Itsuko Sakai, Tokuhisa Ohiwa.
    • Mechanism of modification in Si-O-Si structure in porous SiOCH low-k films by H2/N2 plasmas.
      • 57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-TuA-2.
  • 84) Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Kenji Ishikawa, Makoto Sekine, Hiroki Kondo, Azumi Ito, Masahiro Nakamura, Masaru Hori.
    • Mechanism of highly selective SiO2 etching over photoresist using new alternative gas, C5HF7.
      • 57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-TuA-8.
  • 85) Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori.
    • Polymer surface modification: vibrational sum frequency generation study for plasma etching.
      • 57th International Symposium on American Vacuum Society (AVS), (Albuquerque, New Mexico, October 17-22, 2010), PS1-WeA-8.
  • 86) Yudai Miyawaki, Yusuke Kondo, Hiroshi Yamamoto, A. Ito, H. Matsumoto, K. Takeda, H. Kondo, Kenji Ishikawa, T. Hayashi, Makoto Sekine, Masaru Hori.
    • C5HF7 chemistry for highly selective etch of SiO2 over SiN and Si.
      • 32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), H-3, pp. .
  • 87) H. Yamamoto, Y. Miyawaki, K. Takeda, Kenji Ishikawa, H. Kondo, Makoto Sekine, Masaru Hori, A. Ito, H. Matsumoto.
    • Observation of 193-nm photoresist surface exposed to etching plasma employing C5HF7 gas chemistry.
      • 32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), P2-G2, pp. .
  • 88) Takuya Takeuchi, Shinpei Amasaki, K. Takeda, Kenji Ishikawa, H. Kondo, H. Toyoda, Makoto Sekine, Masaru Hori, S.-Y. Kang, I. Sawada.
    • Investigation of the modified ArF photoresist surface during fluorocarbon plasma etching process.
      • 32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), P2-G3, pp. .
  • 89) Shinpei Amasaki, Takuya Takeuchi, Keigo Takeda, Kenji Ishikawa, H. Kondo, Makoto Sekine, Masaru Hori, N. Sakurai, H. Hayashi, I. Sakai, T. Ohiwa.
    • Investigation of Si etch reaction induced by SF6/O2 plasma.
      • 32nd International Symposium on Dry Process (DPS), (Tokyo tech, November 11-12, 2010), D-2, pp. .
  • 90) Kenji Ishikawa, Makoto Sekine, Masaru Hori.
    • In line electron spin resonance study of plasma-surface interactions for plasma etching.
      • The 3rd International Symposium of Plasma Center for Industrial Applications (PLACIA) & Plasma Application Monodzukuri(PLAM) on Activation of Manufacturing in Nagoya with Plasma Technology, (Naogya, November 17, 2010)
  • 91) M. Hori , Kenji Ishikawa, H. Kondo, K. Takeda, H.Yamamoto, M. Sekine.
    • (INVITED) Plasma induced surface and/or sub-surface interactions on low-k dielectrics.
      • The Second International Symposium on Plasma Nanoscience (iPlasmaNano-II), (Murramarang Resort, New South Wales, Australia, December 12-15, 2010).
  • 92) Kenji Ishikawa, Makoto Sekine, Masaru Hori.
    • (INVITED) In line electron spin resonance study of plasma-surface interaction for plasma etching.
      • 20th MRS-Japan Academic Symposium, Session A: Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-12-I.
  • 93) Naoya Sumi,Kenji Ishikawa,Akihiro Kono,Hideo Horibe,Keigo Takeda,Hiroki Kondo,Makoto Sekine,Masaru Hori.
    • Real-time electron-spin-resonance measurement of plasma induced surface interactions.
      • 20th MRS-Japan Academic Symposium, Session A: Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-21-M.
  • 94) Tokushige Kino,Hiroki Kondo,Kenji Ishikawa,Makoto Sekine,Masaru Hori.
    • Controlled synthesis of amorphous carbon films by radical-injection plasma-enhanced chemical vapor deposition for solar cell.
      • 20th MRS-Japan Academic Symposium, Session A : Frontier of Nano-Materials Based on Advanced Plasma Technologies, (Yokohama, December 20-21, 2010), A-15-M.

国際会議 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | before 2009


Copyright Kenji Ishikawa (c) 2009-2020 Center for Low-temperature plasma sciences, Nagoya University.

Last-modified: 2020-11-20 (金) 22:47:28